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    • 1. 发明授权
    • Method of forming ruthenium oxide films
    • 形成氧化钌膜的方法
    • US06417062B1
    • 2002-07-09
    • US09562194
    • 2000-05-01
    • Donald Franklin FoustJames Wilson RoseErnest Wayne Balch
    • Donald Franklin FoustJames Wilson RoseErnest Wayne Balch
    • H01L2120
    • H01L28/24C23C18/1216C23C18/14H01L21/288H01L21/31683H01L21/76888H01L28/60H05K1/167
    • A method of forming a ruthenium dioxide film for such purposes as the fabrication of stable thin-film resistors for microcircuits. The method generally entails forming an inorganic ruthenium-based film on a substrate, and then thermally decomposing at least a portion of the ruthenium-based film by exposure to a high-intensity beam of radiation, preferably visible light, to yield a ruthenium dioxide film on the substrate. Particular ruthenium-based precursors useful for forming the ruthenium-based film include ruthenium (III) chloride (RuCl3.nH2O) and ruthenium (III) nitrosyl nitrate. The method does not require a thermal treatment that heats the bulk of the substrate on which the ruthenium dioxide film is formed, and is therefore suitable for non-ceramic substrate materials, e.g., polymers such as those used as printed circuit boards (PCBs) and flexible circuits.
    • 形成用于微电路的稳定薄膜电阻器的制造的目的的二氧化钌膜的方法。 该方法通常需要在基板上形成无机钌基膜,然后通过暴露于高强度辐射束(优选可见光)来热分解钌基膜的至少一部分,以产生二氧化钌膜 在基板上。 用于形成钌基膜的特定的基于钌的前体包括氯化钌(III)(RuCl 3·nH 2 O)和硝酸亚硝基硝酸钌(III)。 该方法不需要加热其上形成有二氧化钌膜的基底的主体的热处理,因此适用于非陶瓷基底材料,例如聚合物,例如用作印刷电路板(PCB)的聚合物和 柔性电路。