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1. 发明申请

US20140060635A1 PHOTOVOLTAIC DEVICES 有权
标题翻译：光伏器件
公开(公告)号：US20140060635A1
公开(公告)日：2014-03-06
申请号：US13601162
申请日：2012-08-31
申请人： Donald Franklin Foust , Hongbo Cao , Laura Anne Clark , Robert Andrew Garber , Scott Daniel Feldman-Peabody , Wyatt Keith Metzger , Yinghui Shan , Roman Shuba
发明人： Donald Franklin Foust , Hongbo Cao , Laura Anne Clark , Robert Andrew Garber , Scott Daniel Feldman-Peabody , Wyatt Keith Metzger , Yinghui Shan , Roman Shuba
IPC分类号： H01L31/0232
CPC分类号： H01L31/02963 , H01L31/03925 , H01L31/073 , Y02E10/543
摘要： Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.
摘要翻译：介绍了光伏器件。光电器件包括窗口层和包括设置在窗口层上的半导体材料的半导体层。所述半导体层包括第一区域和第二区域，所述第一区域设置在所述窗口层附近，所述第二区域包括富硫族元素区域，其中所述第一区域和所述第二区域包括掺杂剂，并且平均原子浓度在第二区域中的掺杂剂的平均原子浓度大于第一区域中的掺杂剂的平均原子浓度。

2. 发明申请

US20130074914A1 PHOTOVOLTAIC DEVICES 审中-公开
标题翻译：光伏器件
公开(公告)号：US20130074914A1
公开(公告)日：2013-03-28
申请号：US13244995
申请日：2011-09-26
申请人： Donald Franklin Foust , Hongbo Cao
发明人： Donald Franklin Foust , Hongbo Cao
IPC分类号： H01L31/02 , H01L31/0296 , H01L31/04
CPC分类号： H01L31/022441 , H01L31/02963 , H01L31/073 , Y02E10/543
摘要： One aspect of the present invention includes a photovoltaic device. The photovoltaic device includes a window layer disposed on a support and a doped absorber layer disposed on the window layer, wherein the doped absorber layer includes an absorber material and a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The photovoltaic devices further includes an interfacial layer disposed on the doped absorber layer, wherein the interfacial comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.
摘要翻译：本发明的一个方面包括光伏器件。光伏器件包括设置在支撑体上的窗口层和设置在窗口层上的掺杂吸收层，其中掺杂的吸收层包括吸收材料和选自锰，钴，铬，锌，铟的第一金属，钨，钼及其组合。所述光电器件还包括设置在所述掺杂吸收层上的界面层，其中所述界面包含选自由锰，钴，镍，锌及其组合组成的组的第二金属。

3. 发明授权

US09276157B2 Methods of treating a semiconductor layer 有权
标题翻译：处理半导体层的方法
公开(公告)号：US09276157B2
公开(公告)日：2016-03-01
申请号：US13601110
申请日：2012-08-31
申请人： Donald Franklin Foust , Hongbo Cao , Laura Anne Clark , Robert Andrew Garber , Scott Daniel Feldman-Peabody , Wyatt Keith Metzger , Yinghui Shan , Roman Shuba
发明人： Donald Franklin Foust , Hongbo Cao , Laura Anne Clark , Robert Andrew Garber , Scott Daniel Feldman-Peabody , Wyatt Keith Metzger , Yinghui Shan , Roman Shuba
IPC分类号： H01L21/00 , H01L31/073 , H01L21/02 , H01L31/0224 , H01L31/0392
CPC分类号： H01L31/1828 , H01L21/02052 , H01L31/022425 , H01L31/03925 , H01L31/073 , Y02E10/50 , Y02E10/543
摘要： Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.
摘要翻译：介绍了包括半导体材料在内的半导体层的处理方法。一种方法包括使半导体材料的至少一部分与钝化剂接触。该方法还包括通过将掺杂剂引入到半导体材料中来形成半导体层中的第一区域; 并形成富含硫族元素的区域。该方法还包括在半导体层中形成第二区域，第二区域包括掺杂剂，其中第二区域中的掺杂剂的平均原子浓度大于第一区域中掺杂剂的平均原子浓度。还介绍了光伏器件。

4. 发明授权

US08822261B2 Methods of making photovoltaic devices 有权
标题翻译：制造光伏器件的方法
公开(公告)号：US08822261B2
公开(公告)日：2014-09-02
申请号：US13244971
申请日：2011-09-26
申请人： Donald Franklin Foust , Hongbo Cao
发明人： Donald Franklin Foust , Hongbo Cao
IPC分类号： H01L31/18 , H01L31/073
CPC分类号： H01L31/18 , H01L31/022425 , H01L31/02963 , H01L31/073 , H01L31/1836 , Y02E10/543 , Y02P70/521
摘要： A method of making a photovoltaic device is presented. The method includes disposing an absorber layer on a window layer. The method further includes treating at least a portion of the absorber layer with a first solution including a first metal salt to form a first component, wherein the first metal salt comprises a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The method further includes treating at least a portion of the first component with cadmium chloride to form a second component. The method further includes treating at least a portion of the second component with a second solution including a second metal salt to form an interfacial layer on the second component, wherein the second metal salt comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.
摘要翻译：提出了一种制造光伏器件的方法。该方法包括在窗口层上设置吸收层。该方法还包括用包含第一金属盐的第一溶液处理吸收层的至少一部分以形成第一组分，其中第一金属盐包含选自锰，钴，铬，锌的第一金属，铟，钨，钼及其组合。该方法还包括用氯化镉处理至少一部分第一组分以形成第二组分。该方法还包括用包含第二金属盐的第二溶液处理至少一部分第二组分以在第二组分上形成界面层，其中第二金属盐包含选自锰，钴，镍，锌及其组合。

5. 发明申请

US20140065763A1 METHODS OF TREATING A SEMICONDUCTOR LAYER 有权
标题翻译：处理半导体层的方法
公开(公告)号：US20140065763A1
公开(公告)日：2014-03-06
申请号：US13601110
申请日：2012-08-31
申请人： Donald Franklin Foust , Hongbo Cao , Laura Anne Clark , Robert Andrew Garber , Scott Daniel Feldman-Peabody , Wyatt Keith Metzger , Yinghui Shan , Roman Shuba
发明人： Donald Franklin Foust , Hongbo Cao , Laura Anne Clark , Robert Andrew Garber , Scott Daniel Feldman-Peabody , Wyatt Keith Metzger , Yinghui Shan , Roman Shuba
IPC分类号： H01L31/18
CPC分类号： H01L31/1828 , H01L21/02052 , H01L31/022425 , H01L31/03925 , H01L31/073 , Y02E10/50 , Y02E10/543
摘要： Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.
摘要翻译：介绍了包括半导体材料在内的半导体层的处理方法。一种方法包括使半导体材料的至少一部分与钝化剂接触。该方法还包括通过将掺杂剂引入到半导体材料中来形成半导体层中的第一区域; 并形成富含硫族元素的区域。该方法还包括在半导体层中形成第二区域，第二区域包括掺杂剂，其中第二区域中的掺杂剂的平均原子浓度大于第一区域中掺杂剂的平均原子浓度。还介绍了光伏器件。

6. 发明申请

US20130078757A1 METHODS OF MAKING PHOTOVOLTAIC DEVICES 有权
标题翻译：制造光伏器件的方法
公开(公告)号：US20130078757A1
公开(公告)日：2013-03-28
申请号：US13244971
申请日：2011-09-26
申请人： Donald Franklin Foust , Hongbo Cao
发明人： Donald Franklin Foust , Hongbo Cao
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01L31/022425 , H01L31/02963 , H01L31/073 , H01L31/1836 , Y02E10/543 , Y02P70/521
摘要： One aspect of the present invention includes a method of making a photovoltaic device. The method includes disposing an absorber layer on a window layer. The method further includes treating at least a portion of the absorber layer with a first solution including a first metal salt to form a first component, wherein the first metal salt comprises a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The method further includes treating at least a portion of the first component with cadmium chloride to form a second component. The method further includes treating at least a portion of the second component with a second solution including a second metal salt to form an interfacial layer on the second component, wherein the second metal salt comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.
摘要翻译：本发明的一个方面包括制造光电器件的方法。该方法包括在窗口层上设置吸收层。该方法还包括用包含第一金属盐的第一溶液处理吸收层的至少一部分以形成第一组分，其中第一金属盐包含选自锰，钴，铬，锌的第一金属，铟，钨，钼及其组合。该方法还包括用氯化镉处理至少一部分第一组分以形成第二组分。该方法还包括用包含第二金属盐的第二溶液处理至少一部分第二组分以在第二组分上形成界面层，其中第二金属盐包含选自锰，钴，镍，锌及其组合。

7. 发明授权

US09231134B2 Photovoltaic devices 有权
标题翻译：光伏器件
公开(公告)号：US09231134B2
公开(公告)日：2016-01-05
申请号：US13601162
申请日：2012-08-31
申请人： Donald Franklin Foust , Hongbo Cao , Laura Anne Clark , Robert Andrew Garber , Scott Daniel Feldman-Peabody , Wyatt Keith Metzger , Yinghui Shan , Roman Shuba
发明人： Donald Franklin Foust , Hongbo Cao , Laura Anne Clark , Robert Andrew Garber , Scott Daniel Feldman-Peabody , Wyatt Keith Metzger , Yinghui Shan , Roman Shuba
IPC分类号： H01L31/042 , H01L31/0296 , H01L31/0392 , H01L31/073
CPC分类号： H01L31/02963 , H01L31/03925 , H01L31/073 , Y02E10/543
摘要： Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.
摘要翻译：介绍了光伏器件。光电器件包括窗口层和包括设置在窗口层上的半导体材料的半导体层。所述半导体层包括第一区域和第二区域，所述第一区域设置在所述窗口层附近，所述第二区域包括富硫族元素区域，其中所述第一区域和所述第二区域包括掺杂剂，并且平均原子浓度在第二区域中的掺杂剂的平均原子浓度大于第一区域中的掺杂剂的平均原子浓度。

8. 发明申请

US20080116815A1 Large-area lighting systems and methods of making the same 有权
标题翻译：大面积照明系统及其制作方法
公开(公告)号：US20080116815A1
公开(公告)日：2008-05-22
申请号：US11601538
申请日：2006-11-17
申请人： Donald Franklin Foust , Larry Gene Turner , Ernest Wayne Balch , Hak Fei Poon , William Francis Nealon , Jie Liu , Tami Janene Faircloth
发明人： Donald Franklin Foust , Larry Gene Turner , Ernest Wayne Balch , Hak Fei Poon , William Francis Nealon , Jie Liu , Tami Janene Faircloth
IPC分类号： H05B37/00 , H01J9/00
CPC分类号： H01L51/5203 , H01L27/3204 , H01L51/56 , H01L2251/5361
摘要： Large-Area lighting systems and methods of making the same. More specifically, groups of organic light emitting modules, such as organic light emitting diode modules, coupled in series with respect to on another are provided. The modules cathode of each organic light emitting module is electrically coupled to the anode of an adjacent light emitting module in an interconnect region. A portion of the cathode of each module extends adjacent to an active area of an adjacent module at an interconnect region. Methods of fabricating series groups of organic light emitting modules employing continuous material layers is also provided.
摘要翻译：大面积照明系统及其制作方法。更具体地，提供了相对于另一个串联耦合的有机发光模块（例如有机发光二极管模块）的组。每个有机发光模块的模块阴极电耦合到互连区域中的相邻发光模块的阳极。每个模块的阴极的一部分在互连区域附近邻近相邻模块的有源区域延伸。还提供了使用连续材料层制造串联组的有机发光模块的方法。

9. 发明授权

US06908561B1 Polymide-to-substrate adhesion promotion in HDI 失效
标题翻译： HDI中的聚酰亚胺 - 底物粘附促进
公开(公告)号：US06908561B1
公开(公告)日：2005-06-21
申请号：US10245948
申请日：2002-09-18
申请人： Donald Franklin Foust , William Francis Nealon , Robert G. Davies, Jr. , Charles E. Crepeau
发明人： Donald Franklin Foust , William Francis Nealon , Robert G. Davies, Jr. , Charles E. Crepeau
IPC分类号： B32B9/04 , H01L21/60 , H01L23/538 , H01L25/16
CPC分类号： H01L24/82 , H01L23/5389 , H01L24/24 , H01L24/29 , H01L24/76 , H01L25/16 , H01L2224/04105 , H01L2224/2402 , H01L2224/24227 , H01L2224/29 , H01L2224/2919 , H01L2224/29298 , H01L2224/32225 , H01L2224/73267 , H01L2224/82039 , H01L2224/83191 , H01L2224/83855 , H01L2224/92244 , H01L2924/00011 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01072 , H01L2924/01075 , H01L2924/0665 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/19042 , H01L2924/3025 , H01L2924/00 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： Methods for adhering polyimide dielectric materials to copper-, titanium-, aluminum-, or copper-and-titanium-containing portions of a substrate are described. The methods include the steps of applying adhesion promoter to a clean surface of the substrate, and curing the adhesion promoter. SPIE varnish is applied over the cured adhesion promoter, and is itself cured. A further layer of adhesion promoter is applied over the cured SPIE varnish, and is cured. The polyimide dielectric material is then laminated to the adhesion promoter. Cleaning of the copper-containing substrate portions is performed by etching with etchant including cupric chloride, cleaning of the titanium-containing substrate portions is performed with etchant including HF, and cleaning of copper- and titanium-containing portions is performed by HF etching followed by cupric chloride etching. Aluminum-containing portions of the substrate are not etched.
摘要翻译：描述了将聚酰亚胺电介质材料粘附到基底的铜，钛，铝或铜和钛的部分的方法。所述方法包括将粘合促进剂施加到基材的清洁表面并固化粘合促进剂的步骤。 SPIE清漆涂覆在固化的粘合促进剂上，并自身固化。在固化的SPIE清漆上施加另一层粘合促进剂，并固化。然后将聚酰亚胺电介质材料层压到粘合促进剂上。含铜基材部分的清洗是通过用包括氯化铜在内的蚀刻剂进行蚀刻来进行的，用包含HF的蚀刻剂进行含钛基板部分的清洗，并且通过HF蚀刻然后进行清洗氯化铜蚀刻。不对基板的含铝部分进行蚀刻。

10. 发明授权

US07259391B2 Vertical interconnect for organic electronic devices 有权
标题翻译：有机电子设备的垂直互连
公开(公告)号：US07259391B2
公开(公告)日：2007-08-21
申请号：US11020338
申请日：2004-12-22
申请人： Jie Liu , Anil Raj Duggal , Christian Maria Anton Heller , Donald Franklin Foust , Tami Janene Faircloth
发明人： Jie Liu , Anil Raj Duggal , Christian Maria Anton Heller , Donald Franklin Foust , Tami Janene Faircloth
IPC分类号： H01L51/00
CPC分类号： H01L51/5203 , H01L27/3202 , H01L27/3204 , H01L27/3225 , H01L51/0021 , H01L51/0024 , H01L2251/5338 , Y02E10/549
摘要： A device includes a plurality of organic electronic devices disposed on a substrate, wherein each of the organic electronic devices comprises a first electrode and a second electrode. Furthermore, the device includes an organic layer disposed between the first and second electrodes of each of the plurality of organic electronic devices. Additionally, the device includes an interconnect element, wherein the interconnect element is configured to electrically couple the respective first and second electrodes of each of the plurality of organic electronic devices.
摘要翻译：一种器件包括设置在衬底上的多个有机电子器件，其中每个有机电子器件包括第一电极和第二电极。此外，该器件包括设置在多个有机电子器件中的每一个的第一和第二电极之间的有机层。另外，该器件包括互连元件，其中互连元件被配置为电耦合多个有机电子器件中的每一个的相应的第一和第二电极。

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