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1. 发明申请

US20080179546A1 ION BEAM APPARATUS HAVING PLASMA SHEATH CONTROLLER 失效
标题翻译：具有等离子体控制器的离子束装置
公开(公告)号：US20080179546A1
公开(公告)日：2008-07-31
申请号：US11834561
申请日：2007-08-06
申请人： Do-Haing LEE , Sung-Wook HWANG , Chul-Ho SHIN
发明人： Do-Haing LEE , Sung-Wook HWANG , Chul-Ho SHIN
IPC分类号： H01J37/08
CPC分类号： H01J37/08 , H01J27/024 , H01J37/3053 , H01J2237/061 , H01J2237/24542
摘要： An ion beam apparatus includes a plasma chamber with a grid assembly installed at one end of the plasma chamber and a plasma sheath controller disposed between the plasma chamber and the grid assembly. The grid assembly includes first ion extraction apertures. The plasma sheath controller includes second ion extraction apertures smaller than the first ion extraction apertures. When the plasma sheath controller is used in this configuration, the surface of the plasma takes on a more planar configuration adjacent the controller so that ions, extracted from the plasma in a perpendicular direction to the plasma surface, pass cleanly through the apertures of the grid assembly rather than collide with the sidewalls of the grid assembly apertures. A semiconductor manufacturing apparatus and method for forming an ion beam are also provided.
摘要翻译：离子束装置包括等离子体室，其中安装在等离子体室的一端的栅格组件和设置在等离子体室和栅格组件之间的等离子体鞘控制器。栅格组件包括第一离子提取孔。等离子体鞘控制器包括比第一离子提取孔小的第二离子提取孔。当在该构造中使用等离子体鞘控制器时，等离子体的表面具有与控制器相邻的更平面的配置，使得从垂直于等离子体表面的方向从等离子体提取的离子通过网格的孔组件而不是与栅格组件孔的侧壁碰撞。还提供了用于形成离子束的半导体制造装置和方法。

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