专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090032902A1 Semiconductor Devices and Methods for Manufacturing the Same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090032902A1
公开(公告)日：2009-02-05
申请号：US12249883
申请日：2008-10-10
申请人： Chul-Ho SHIN , Tae-Hong Kim
发明人： Chul-Ho SHIN , Tae-Hong Kim
IPC分类号： H01L23/58
CPC分类号： H01L21/02323 , H01L21/0214 , H01L21/02255 , H01L21/3144 , H01L21/823462 , H01L21/823481
摘要： Semiconductor devices and methods for manufacturing the same are disclosed. An example method includes loading a first substrate to be provided with an oxynitride layer along with a second substrate having a nitride layer in a boat, and forming the oxynitride layer on the first substrate by placing the boat into a furnace and thermally treating the boat under an oxygen atmosphere.
摘要翻译：公开了半导体装置及其制造方法。一种示例性方法包括将具有氮氧化物层的第一衬底与在舟皿中具有氮化物层的第二衬底加载，并且通过将舟放置在炉中并在其上热处理来在第一衬底上形成氧氮化物层氧气氛围。

2. 发明申请

US20060022284A1 Semiconductor devices and methods for manufacturing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20060022284A1
公开(公告)日：2006-02-02
申请号：US11191182
申请日：2005-07-27
申请人： Chul-Ho Shin , Tae-Hong Kim
发明人： Chul-Ho Shin , Tae-Hong Kim
IPC分类号： H01L29/94 , H01L21/31 , H01L29/76
CPC分类号： H01L21/02323 , H01L21/0214 , H01L21/02255 , H01L21/3144 , H01L21/823462 , H01L21/823481
摘要： Semiconductor devices and methods for manufacturing the same are disclosed. An example method includes loading a first substrate to be provided with an oxynitride layer along with a second substrate having a nitride layer in a boat, and forming the oxynitride layer on the first substrate by placing the boat into a furnace and thermally treating the boat under an oxygen atmosphere.
摘要翻译：公开了半导体装置及其制造方法。一种示例性方法包括将具有氮氧化物层的第一衬底与在舟皿中具有氮化物层的第二衬底加载，并且通过将舟放置在炉中并在其上热处理来在第一衬底上形成氧氮化物层氧气氛围。

3. 发明授权

US07452830B2 Semiconductor devices and methods for manufacturing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US07452830B2
公开(公告)日：2008-11-18
申请号：US11191182
申请日：2005-07-27
申请人： Chul-Ho Shin , Tae-Hong Kim
发明人： Chul-Ho Shin , Tae-Hong Kim
IPC分类号： H01L29/94 , H01L21/31
CPC分类号： H01L21/02323 , H01L21/0214 , H01L21/02255 , H01L21/3144 , H01L21/823462 , H01L21/823481
摘要： Semiconductor devices and methods for manufacturing the same are disclosed. An example method includes loading a first substrate to be provided with an oxynitride layer along with a second substrate having a nitride layer in a boat, and forming the oxynitride layer on the first substrate by placing the boat into a furnace and thermally treating the boat under an oxygen atmosphere.
摘要翻译：公开了半导体装置及其制造方法。一种示例性方法包括将具有氮氧化物层的第一衬底与在舟皿中具有氮化物层的第二衬底加载，并且通过将舟放置在炉中并在其上热处理来在第一衬底上形成氧氮化物层氧气氛围。

4. 发明授权

US5750452A Dielectric ceramic composition for microwave 失效
标题翻译：用于微波的介电陶瓷组合物
公开(公告)号：US5750452A
公开(公告)日：1998-05-12
申请号：US804280
申请日：1997-03-03
申请人： Jung-Rae Park , Tae-Hong Kim , Suk-Jin Lee , Tae-Goo Choy
发明人： Jung-Rae Park , Tae-Hong Kim , Suk-Jin Lee , Tae-Goo Choy
IPC分类号： C04B35/46 , C04B35/462 , H01B3/12 , H01P7/10 , C04B35/468 , C04B35/472
CPC分类号： C04B35/462
摘要： The present invention relates to a dielectric ceramic composition for microwave which consists of BaO, Sm.sub.2 O.sub.3, TiO.sub.2 and PbO, and has a compositional formula of x(Ba.sub.1-.alpha., Pb.sub..alpha.)O-- ySm.sub.2 O.sub.3 -zTiO.sub.2, wherein 6 mol % .ltoreq.x.ltoreq.20 mol %, 6 mol %.ltoreq.y.ltoreq.20 mol %, 60 mol %.ltoreq.z.ltoreq.75 mol % and 0 mol % .ltoreq..alpha..ltoreq.0.2 mol %. Accordingly, since the dielectric ceramic composition for microwave according to the present invention has the dielectric constant more than 85, the temperature factor of the resonant frequency within .+-.5 ppm/.degree.C., and the quality factor more than 6000 in 1 GHz, it can be utilized in the filter for microwave, the dielectric for the resonator, the laminated ceramic capacitor, the dielectric for the filter for electromagnetic wave obstacle and the dielectric for capacitor. And also, since it is possible to reduce the problems to the volatilization of the plumbic oxide and the bismuth oxide, the dielectric ceramic composition for microwave according to the present invention can be made by a general manufacturing process and can reduce the use of the elements detrimental to the human body.
摘要翻译：本发明涉及由BaO，Sm2O3，TiO2和PbO组成的微波介电陶瓷组合物，其组成式为x（Ba1-α，Pba）O-ySm2O3-zTiO2，其中6mol％ x = 20摩尔％，6摩尔％≤y20摩尔％，60摩尔％≤75摩尔％，0摩尔％≤0.2摩尔％。因此，由于本发明的微波用电介质陶瓷组合物的介电常数大于85，谐振频率的温度系数在±5ppm /℃以内，1GHz的质量因子大于6000 ，可以用于微波滤波器，谐振器的电介质，层叠陶瓷电容器，用于电磁波障碍物的滤波器的电介质和用于电容器的电介质。并且，由于可以减少铅酸铅和氧化铋的挥发的问题，根据本发明的微波介电陶瓷组合物可以通过一般的制造方法制造，并且可以减少元素的使用有害于人体。

5. 发明授权

US5688732A Dielectric ceramic compositions for microwave 失效
标题翻译：用于微波的介电陶瓷组合物
公开(公告)号：US5688732A
公开(公告)日：1997-11-18
申请号：US559278
申请日：1995-11-15
申请人： Jung-Rae Park , Tae-Hong Kim , Suk-Jin Lee , Sang-Seok Lee , Tae-Goo Choi
发明人： Jung-Rae Park , Tae-Hong Kim , Suk-Jin Lee , Sang-Seok Lee , Tae-Goo Choi
IPC分类号： C04B35/46 , C04B35/468 , H01B3/12 , H01G4/12 , H01P7/10
CPC分类号： H01G4/1218 , C04B35/4688 , H01G4/1227
摘要： The present invention relates to dielectric ceramic compositions for microwave applications consisting of BaO, PbO, Nd.sub.2 O.sub.3, CeO.sub.2, La.sub.2 O.sub.3 and TiO.sub.2 or consisting of compositions including these elements and having a composition formula (I). x(Ba.sub.1-.alpha. Pb.sub..alpha.)O-y�Nd.sub.2 O.sub.3(1-.beta.-.gamma.) CeO.sub.2(.beta.) La.sub.2 O.sub.3(.gamma.) !-zTiO.sub.2 (I) wherein mol %, 6.ltoreq.x.ltoreq.20, 10.ltoreq.y.ltoreq.20, 60.ltoreq.z.ltoreq.75, x+y+z=100; and 0
摘要翻译：本发明涉及由BaO，PbO，Nd 2 O 3，CeO 2，La 2 O 3和TiO 2组成的微波应用的电介质陶瓷组合物或由包含这些元素并具有组成式（I）的组合物构成。 x（Ba1-αBbα）Oy [Nd2O3（1-β-γ）CeO2（β）La2O3（γ）] -zTiO2（I）其中mol％，6≤x≤20， y = 20，60

6. 发明授权

US5957272A Push button for control panels 失效
标题翻译：控制面板按钮
公开(公告)号：US5957272A
公开(公告)日：1999-09-28
申请号：US190017
申请日：1998-11-12
申请人： Tae-Hong Kim
发明人： Tae-Hong Kim
IPC分类号： H01H13/705 , H01H3/00 , H01H13/70
CPC分类号： H01H13/705 , H01H2013/066 , H01H2217/028 , H01H2231/026 , H01H2231/036
摘要： A push button which is employed in a control panel includes button body, a pushing finger, and a core. The button body has hollow space formed at an inner portion thereof and a bellows portion formed around a side portion thereof. The pushing finger protrudes upwardly from an outer surface of an upper end portion of the button body for receiving a pushing force. The core is retained in the hollow space, and fixed at an inner surface of the closed upper end portion. When the bellows portion of the button body is elastically compressed by a pushing force, an other end portion of the core is protruded from the lower end portion of the button body, and when the pushing force is removed from the pushing finger, the other end portion of the core is retained in the hollow space.
摘要翻译：在控制面板中使用的按钮包括按钮体，推指和芯。按钮体在其内部形成有中空空间，在其侧部形成有波纹管部。推动手指从按钮体的上端部的外表面向上突出，用于接收推力。芯部保持在中空空间中，并固定在封闭的上端部的内表面。当按钮体的波纹管部分被推力弹性地压缩时，芯体的另一端部从按钮体的下端部突出，并且当从推动手指移除推力时，另一端芯的一部分保留在中空空间中。

7. 发明授权

US5902514A Magnetic ceramic composition for use in microwave devices, magnetic ceramics for use in microwave devices, and preparation method therefor 失效
标题翻译：用于微波器件的磁性陶瓷组合物，用于微波器件的磁性陶瓷及其制备方法
公开(公告)号：US5902514A
公开(公告)日：1999-05-11
申请号：US903773
申请日：1997-07-31
申请人： Jung-Rae Park , Tae-Hong Kim , Sang-Seok Lee , Tae-Goo Choy
发明人： Jung-Rae Park , Tae-Hong Kim , Sang-Seok Lee , Tae-Goo Choy
IPC分类号： C04B35/00 , C04B35/26 , C04B35/40 , C04B35/50 , H01F1/34
CPC分类号： C04B35/26 , H01F1/346
摘要： A material for microwave band devices used by the general people and in industrial electronic apparatuses is disclosed. Particularly, a magnetic ceramic composition for use in microwave devices, a magnetic ceramics for use in microwave devices and a preparation method therefore are disclosed, in which the saturation magnetization can be easily controlled, and a low ferri-magnetic resonance half line width and an acceptable curie temperature are ensured. The magnetic ceramic composition for microwave devices includes yttrium oxide (Y.sub.2 O.sub.3), iron oxide (Fe.sub.2 O.sub.3), tin oxide (SnO.sub.2), aluminum oxide (Al.sub.2 O.sub.3) and a calcium supply source. The magnetic ceramics for the microwave devices are manufactured by carrying out a forming and a sintering after mixing: yttrium oxide, iron oxide, tin oxide, aluminum oxide and calcium carbonate (or calcium oxide) based on a formula shown below. It has a saturation magnetization of 100-1,800 G at the normal temperature, a temperature coefficient for the saturation magnetization of 0.2%/.degree.C., and a ferri-magnetic resonance half line width of less than 60 Oe, Y.sub.3-x Ca.sub.x/2 Sn.sub.x/2 Fe.sub.5-y Al.sub.y O.sub.12 where 0.1.ltoreq.x.ltoreq.1, and 0.1.ltoreq.y.ltoreq.1.5.
摘要翻译：公开了一般用户和工业电子设备中使用的微波带装置的材料。特别地，公开了一种用于微波器件的磁性陶瓷组合物，用于微波器件的磁性陶瓷及其制备方法，其中可以容易地控制饱和磁化强度，并且低铁磁共振半线宽度和确保可接受的居里温度。用于微波器件的磁性陶瓷组合物包括氧化钇（Y 2 O 3），氧化铁（Fe 2 O 3），氧化锡（SnO 2），氧化铝（Al 2 O 3）和钙供应源。用于微波器件的磁性陶瓷通过以下所示的配方在混合之后进行成形和烧结来制造：氧化钇，氧化铁，氧化锡，氧化铝和碳酸钙（或氧化钙）。在正常温度下饱和磁化强度为100-1800G，饱和磁化强度的温度系数为0.2％/℃，铁磁共振半线宽度小于60Oe，Y3-xCax / 2Snx / 2Fe5-yAlyO12，其中0.1≤x≤1，0.1≤y≤1.5。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式