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1. 发明授权

US07529070B2 Power pin to power pin electro-static discharge (ESD) clamp 有权
标题翻译：电源引脚为电源引脚静电放电（ESD）钳位
公开(公告)号：US07529070B2
公开(公告)日：2009-05-05
申请号：US11076850
申请日：2005-03-11
申请人： Dipankar Bhattacharya , John Kriz , Che Coi Leung , Duane J. Loeper , Yehuda Smooha
发明人： Dipankar Bhattacharya , John Kriz , Che Coi Leung , Duane J. Loeper , Yehuda Smooha
IPC分类号： H02H9/00
CPC分类号： H01L27/0266
摘要： An ESD clamp circuit for use between separate power rails. An ESD clamp is based on a wide nMOSFET. A symmetrical circuit is designed vis-à-vis the two power rails, with respect to ground, allowing discharge of an ESD surge in both polarities of stress. An nMOSFET device drives the gate of a large nMOSFET (e.g., having a device width between 1000 and 10,000 microns). The large power rail-to-power rail nMOSFET has its gate controlled by the output inverter stage of either ESD detection circuit connected to a respective power supply rail. The gate is switched to a common ground during normal operation of the integrated circuit.
摘要翻译：用于单独电源轨之间的ESD钳位电路。 ESD钳位基于宽nMOSFET。相对于地面，相对于两个电源轨设计了对称电路，允许在两个极限应力下放电ESD浪涌。 nMOSFET器件驱动大的nMOSFET的栅极（例如，具有1000和10,000微米之间的器件宽度）。大功率轨至轨电源nMOSFET的栅极由连接到相应电源轨的ESD检测电路的输出反相级控制。在集成电路的正常工作期间，门被切换到公共地。

2. 发明授权

US07276957B2 Floating well circuit having enhanced latch-up performance 失效
标题翻译：具有增强的闭锁性能的浮动井回路
公开(公告)号：US07276957B2
公开(公告)日：2007-10-02
申请号：US11239840
申请日：2005-09-30
申请人： Dipankar Bhattacharya , Makeshwar Kothandaraman , John C. Kriz , Duane J. Loeper , Bernard L. Morris , Yehuda Smooha
发明人： Dipankar Bhattacharya , Makeshwar Kothandaraman , John C. Kriz , Duane J. Loeper , Bernard L. Morris , Yehuda Smooha
IPC分类号： H03K
CPC分类号： H03K19/00315 , H03K2217/0018
摘要： A circuit for defining a voltage potential of a floating well in which is formed at least one metal-oxide-semiconductor device includes a sense circuit operative to detect a voltage at a node to which the floating well is connected and to generate a control signal indicative of whether the voltage at the node is substantially within a voltage range. A lower value of the voltage range is substantially equal to a threshold voltage below a first supply voltage of the circuit. An upper value of the voltage range is substantially equal to a threshold voltage above the first supply voltage. The circuit for defining the voltage potential of the floating well further includes a voltage generator circuit operative to receive the control signal and to generate a bias signal for setting a voltage potential of the well in response to the control signal, the bias signal being controlled throughout the voltage range.
摘要翻译：用于限定其中形成有至少一个金属氧化物半导体器件的浮动阱的电压电位的电路包括感测电路，其可操作以检测浮动阱连接到的节点处的电压，并产生指示性的控制信号节点处的电压是否基本上在电压范围内。电压范围的较低值基本上等于低于电路的第一电源电压的阈值电压。电压范围的较高值基本上等于高于第一电源电压的阈值电压。用于定义浮动阱的电压电位的电路还包括电压发生器电路，其操作以接收控制信号并产生用于响应于控制信号设置阱的电压电位的偏置信号，偏置信号被控制在整个电压范围。

3. 发明申请

US20100271118A1 I/O Buffer with Low Voltage Semiconductor Devices 失效
标题翻译：带低压半导体器件的I / O缓冲器
公开(公告)号：US20100271118A1
公开(公告)日：2010-10-28
申请号：US12428556
申请日：2009-04-23
申请人： Dipankar Bhattacharya , Makeshwar Kothandaraman , John Kriz , Jeffrey Nagy , Yehuda Smooha , Pankaj Kumar
发明人： Dipankar Bhattacharya , Makeshwar Kothandaraman , John Kriz , Jeffrey Nagy , Yehuda Smooha , Pankaj Kumar
IPC分类号： G05F1/10
CPC分类号： H03K17/0822 , H03K19/018528
摘要： Described embodiments provide for protecting from DC and transient over-voltage conditions an input/output (“I/O”) buffer having first and second I/O transistors. The first I/O transistor is coupled to a first over-voltage protection circuit adapted to prevent an over-voltage condition on at least the first I/O transistor. The second I/O transistor is coupled to a second over-voltage protection circuit adapted to prevent an over-voltage condition on at least the second I/O transistor. First and second bias voltages are generated from an operating voltage of the buffer. A third bias voltage is generated from either i) the first bias voltage, or ii) an output signal voltage of the buffer and a fourth bias voltage is generated from either i) the second bias voltage, or ii) the output signal voltage of the buffer. The third and fourth bias voltages are provided to the first and second over-voltage protection circuits, respectively.
摘要翻译：所描述的实施例提供了用于保护具有第一和第二I / O晶体管的输入/输出（“I / O”）缓冲器的DC和瞬态过电压状态。第一I / O晶体管耦合到适于防止至少第一I / O晶体管上的过电压状态的第一过电压保护电路。第二I / O晶体管耦合到适于防止至少第二I / O晶体管上的过电压状态的第二过电压保护电路。从缓冲器的工作电压产生第一和第二偏置电压。从i）第一偏置电压产生第三偏置电压，或者ii）缓冲器的输出信号电压，以及从i）第二偏置电压产生第四偏置电压，或ii）输出信号电压缓冲。第三和第四偏置电压分别提供给第一和第二过压保护电路。

4. 发明申请

US20060092589A1 Electrostatic discharge protection in a semiconductor device 有权
公开(公告)号：US20060092589A1
公开(公告)日：2006-05-04
申请号：US10977881
申请日：2004-10-29
申请人： Dipankar Bhattacharya , John Kriz , Bernard Morris , Yehuda Smooha
发明人： Dipankar Bhattacharya , John Kriz , Bernard Morris , Yehuda Smooha
IPC分类号： H02H9/00
CPC分类号： H01L27/0266
摘要： An ESD protection circuit for protecting a circuit from an ESD event occurring between a first voltage supply node and a second voltage supply node associated with the circuit to be protected includes an MOS device having a gate terminal, a first source/drain terminal and a second source/drain terminal. The first source/drain terminal is connected to the first voltage supply node and the second source/drain terminal is connected to the second voltage supply node. The ESD protection circuit further includes a trigger circuit coupled to the gate terminal of the MOS device. The trigger circuit is configured to generate a control signal at the gate terminal of the MOS device for activating the MOS device during the ESD event. At least a portion of the trigger circuit is formed in a floating well which becomes biased to a voltage that is substantially equal to a first voltage when the first voltage is supplied to the first voltage supply node or to a second voltage when the second voltage is applied to the second voltage supply node, whichever voltage is greater.

5. 发明申请

US20060192587A1 Self-bypassing voltage level translator circuit 有权
公开(公告)号：US20060192587A1
公开(公告)日：2006-08-31
申请号：US11065785
申请日：2005-02-25
申请人： Dipankar Bhattacharya , Makeshwar Kothandaraman , John Kriz , Bernard Morris , Yehuda Smooha
发明人： Dipankar Bhattacharya , Makeshwar Kothandaraman , John Kriz , Bernard Morris , Yehuda Smooha
IPC分类号： H03K19/0175
CPC分类号： H03K3/012 , H03K3/356113 , H03K17/102
摘要： A voltage level translator circuit is selectively operable in one of at least two modes in response to a control signal. In a first mode, the voltage level translator circuit is operative to translate an input signal referenced to a first source providing a first voltage to an output signal referenced to a second source providing a second voltage. In a second mode, the voltage level translator circuit is operative to provide a signal path from an input of the voltage translator circuit to an output thereof without translating the input signal. The control signal is indicative of a difference between the first voltage and the second voltage.

6. 发明申请

US20050168319A1 Semiconductor resistor 有权
标题翻译：半导体电阻
公开(公告)号：US20050168319A1
公开(公告)日：2005-08-04
申请号：US10768771
申请日：2004-01-30
申请人： Dipankar Bhattacharya , John Kriz , Stefan Siegel , Joseph Simko , Yehuda Smooha
发明人： Dipankar Bhattacharya , John Kriz , Stefan Siegel , Joseph Simko , Yehuda Smooha
IPC分类号： H01C1/14 , H01L21/02 , H01L23/522 , H01L27/08 , H01C1/012
CPC分类号： H01L28/20 , H01C1/14 , H01L23/5228 , H01L27/0802 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor resistor comprises a resistor body formed on a semiconductor substrate and first and second conductive terminals electrically connected to the resistor body at opposite ends thereof. The semiconductor resistor further includes at least first and second conductive paths between at least one of the first and second conductive terminals and the resistor body. The at least one conductive terminal is configured such that a resistance of the at least one conductive terminal between the at least first and second conductive paths is substantially matched to a resistance of the resistor body between the at least first and second conductive paths. In this manner, a current distribution between the at least first and second conductive paths is substantially matched.
摘要翻译：半导体电阻器包括形成在半导体衬底上的电阻体和在其两端电连接到电阻体的第一和第二导电端子。半导体电阻器还包括在第一和第二导电端子和电阻器主体中的至少一个之间的至少第一和第二导电路径。至少一个导电端子被配置为使得至少第一和第二导电路径之间的至少一个导电端子的电阻基本上与至少第一和第二导电路径之间的电阻体的电阻相匹配。以这种方式，至少第一和第二导电路径之间的电流分布基本匹配。

7. 发明申请

US20060203405A1 Power pin to power pin electro-static discharge (ESD) clamp 有权
公开(公告)号：US20060203405A1
公开(公告)日：2006-09-14
申请号：US11076850
申请日：2005-03-11
申请人： Dipankar Bhattacharya , John Kriz , Che Leung , Duane Loeper , Yehuda Smooha
发明人： Dipankar Bhattacharya , John Kriz , Che Leung , Duane Loeper , Yehuda Smooha
IPC分类号： H02H9/00
CPC分类号： H01L27/0266
摘要： An ESD clamp circuit for use between separate power rails. An ESD clamp is based on a wide nMOSFET. A symmetrical circuit is designed vis-à-vis the two power rails, with respect to ground, allowing discharge of an ESD surge in both polarities of stress. An nMOSFET device drives the gate of a large nMOSFET (e.g., having a device width between 1000 and 10,000 microns). The large power rail-to-power rail nMOSFET has its gate controlled by the output inverter stage of either ESD detection circuit connected to a respective power supply rail. The gate is switched to a common ground during normal operation of the integrated circuit.

8. 发明授权

US07936209B2 I/O buffer with low voltage semiconductor devices 失效
标题翻译：具有低电压半导体器件的I / O缓冲器
公开(公告)号：US07936209B2
公开(公告)日：2011-05-03
申请号：US12428556
申请日：2009-04-23
申请人： Dipankar Bhattacharya , Makeshwar Kothandaraman , John Kriz , Jeffrey Nagy , Yehuda Smooha , Pankaj Kumar
发明人： Dipankar Bhattacharya , Makeshwar Kothandaraman , John Kriz , Jeffrey Nagy , Yehuda Smooha , Pankaj Kumar
IPC分类号： G05F1/10 , G05F3/02
CPC分类号： H03K17/0822 , H03K19/018528
摘要： Described embodiments provide for protecting from DC and transient over-voltage conditions an input/output (“I/O”) buffer having first and second I/O transistors. The first I/O transistor is coupled to a first over-voltage protection circuit adapted to prevent an over-voltage condition on at least the first I/O transistor. The second I/O transistor is coupled to a second over-voltage protection circuit adapted to prevent an over-voltage condition on at least the second I/O transistor. First and second bias voltages are generated from an operating voltage of the buffer. A third bias voltage is generated from either i) the first bias voltage, or ii) an output signal voltage of the buffer and a fourth bias voltage is generated from either i) the second bias voltage, or ii) the output signal voltage of the buffer. The third and fourth bias voltages are provided to the first and second over-voltage protection circuits, respectively.
摘要翻译：所描述的实施例提供了用于保护具有第一和第二I / O晶体管的输入/输出（“I / O”）缓冲器的DC和瞬态过电压状态。第一I / O晶体管耦合到适于防止至少第一I / O晶体管上的过电压状态的第一过电压保护电路。第二I / O晶体管耦合到适于防止至少第二I / O晶体管上的过电压状态的第二过电压保护电路。从缓冲器的工作电压产生第一和第二偏置电压。从i）第一偏置电压产生第三偏置电压，或者ii）缓冲器的输出信号电压，以及从i）第二偏置电压产生第四偏置电压，或ii）输出信号电压缓冲。第三和第四偏置电压分别提供给第一和第二过压保护电路。

9. 发明申请

US20070075748A1 Floating well circuit having enhanced latch-up performance 失效
公开(公告)号：US20070075748A1
公开(公告)日：2007-04-05
申请号：US11239840
申请日：2005-09-30
申请人： Dipankar Bhattacharya , Makeshwar Kothandaraman , John Kriz , Duane Loeper , Bernard Morris , Yehuda Smooha
发明人： Dipankar Bhattacharya , Makeshwar Kothandaraman , John Kriz , Duane Loeper , Bernard Morris , Yehuda Smooha
IPC分类号： H03K5/22
CPC分类号： H03K19/00315 , H03K2217/0018
摘要： A circuit for defining a voltage potential of a floating well in which is formed at least one metal-oxide-semiconductor device includes a sense circuit operative to detect a voltage at a node to which the floating well is connected and to generate a control signal indicative of whether the voltage at the node is substantially within a voltage range. A lower value of the voltage range is substantially equal to a threshold voltage below a first supply voltage of the circuit. An upper value of the voltage range is substantially equal to a threshold voltage above the first supply voltage. The circuit for defining the voltage potential of the floating well further includes a voltage generator circuit operative to receive the control signal and to generate a bias signal for setting a voltage potential of the well in response to the control signal, the bias signal being controlled throughout the voltage range.

10. 发明申请

US20070046338A1 Buffer circuit with multiple voltage range 失效
标题翻译：具有多电压范围的缓冲电路
公开(公告)号：US20070046338A1
公开(公告)日：2007-03-01
申请号：US11215663
申请日：2005-08-30
申请人： Dipankar Bhattacharya , Makeshwar Kothandaraman , John Kriz , Bernard Morris , Yehuda Smooha
发明人： Dipankar Bhattacharya , Makeshwar Kothandaraman , John Kriz , Bernard Morris , Yehuda Smooha
IPC分类号： H03B1/00
CPC分类号： H03K19/018585 , H03K19/018521 , H03K19/018592
摘要： A buffer circuit operative at multiple power supply voltage levels includes first and second buffers, the first buffer being configured for operation with a first voltage source and the second buffer being operative with a second voltage source. The buffer circuit further includes a controllable isolation circuit. An output of the first buffer connects to an external pad of the buffer circuit, and an output of the second buffer connects to the pad via the isolation circuit. The buffer circuit is selectively operative in at least a first mode or a second mode in response to at least a first control signal. The isolation circuit is operative in the first mode to substantially isolate the second buffer from the external pad and is operative in the second mode to connect the output of the second buffer to the external pad.
摘要翻译：在多个电源电压电平下工作的缓冲电路包括第一和第二缓冲器，第一缓冲器被配置为与第一电压源一起操作，第二缓冲器与第二电压源一起工作。缓冲电路还包括可控隔离电路。第一缓冲器的输出连接到缓冲电路的外部焊盘，第二缓冲器的输出经由隔离电路连接到焊盘。响应于至少第一控制信号，缓冲器电路以至少第一模式或第二模式选择性地工作。隔离电路在第一模式下工作，以将第二缓冲器与外部焊盘基本隔离，并且在第二模式下工作，以将第二缓冲器的输出连接到外部焊盘。

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