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1. 发明授权

US08377796B2 III-V compound semiconductor epitaxy from a non-III-V substrate 有权
标题翻译： III-V族化合物半导体外延从非III-V衬底
公开(公告)号：US08377796B2
公开(公告)日：2013-02-19
申请号：US12539374
申请日：2009-08-11
申请人： Chia-Lin Yu , Chen-Hua Yu , Ding-Yuan Chen , Wen-Chih Chiou
发明人： Chia-Lin Yu , Chen-Hua Yu , Ding-Yuan Chen , Wen-Chih Chiou
IPC分类号： H01L21/768
CPC分类号： H01L21/02365 , H01L21/02104 , H01L21/0237 , H01L21/02381 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/02538 , H01L21/02639 , H01L21/02642 , H01L21/02645 , H01L29/12
摘要： A method of forming a circuit structure includes providing a substrate; forming recesses in the substrate; forming a mask layer over the substrate, wherein the mask layer covers non-recessed portions of the substrate, with the recesses exposed through openings in the mask layer; forming a buffer/nucleation layer on exposed portions of the substrate in the recesses; and growing a group-III group-V (III-V) compound semiconductor material from the recesses until portions of the III-V compound semiconductor material grown from the recesses join each other to form a continuous III-V compound semiconductor layer.
摘要翻译：形成电路结构的方法包括提供基板; 在基板上形成凹部; 在所述基板上形成掩模层，其中所述掩模层覆盖所述基板的非凹部，所述凹部通过所述掩模层中的开口暴露; 在所述凹部中的所述基板的暴露部分上形成缓冲/成核层; 以及从所述凹部生长第III族V族化合物半导体材料，直到从所述凹部生长的所述III-V族化合物半导体材料的部分相互连接形成连续的III-V族化合物半导体层。

2. 发明授权

US08278679B2 LED device with embedded top electrode 有权
标题翻译：带嵌入式顶部电极的LED器件
公开(公告)号：US08278679B2
公开(公告)日：2012-10-02
申请号：US12235269
申请日：2008-09-22
申请人： Chen-Hua Yu , Ding-Yuan Chen , Wen-Chih Chiou
发明人： Chen-Hua Yu , Ding-Yuan Chen , Wen-Chih Chiou
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/005 , H01L33/20 , H01L33/382 , H01L33/405
摘要： An LED device and a method of manufacturing, including an embedded top electrode, are presented. The LED device includes an LED structure and a top electrode. The LED structure includes layers disposed on a substrate, including an active light-emitting region. A top layer of the LED structure is a top contact layer. The top electrode is embedded into the top contact layer, wherein the top electrode electrically contacts the top contact layer.
摘要翻译：提出了一种LED器件及其制造方法，包括嵌入式顶部电极。 LED装置包括LED结构和顶部电极。 LED结构包括设置在基板上的层，包括有源发光区域。 LED结构的顶层是顶部接触层。顶部电极嵌入到顶部接触层中，其中顶部电极电接触顶部接触层。

3. 发明授权

US08148732B2 Carbon-containing semiconductor substrate 有权
标题翻译：含碳半导体衬底
公开(公告)号：US08148732B2
公开(公告)日：2012-04-03
申请号：US12509339
申请日：2009-07-24
申请人： Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou , Hung-Ta Lin
发明人： Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou , Hung-Ta Lin
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02447 , H01L21/02458 , H01L21/02491 , H01L21/02505 , H01L21/0254 , H01L21/223 , H01L21/26506 , H01L33/025
摘要： A light-emitting diode (LED) device is provided. The LED device is formed on a substrate having a carbon-containing layer. Carbon atoms are introduced into the substrate to prevent or reduce atoms from an overlying metal/metal alloy transition layer from inter-mixing with atoms of the substrate. In this manner, a crystalline structure is maintained upon which the LED structure may be formed.
摘要翻译：提供了一种发光二极管（LED）装置。 LED装置形成在具有含碳层的基板上。将碳原子引入衬底中以防止或减少来自上层金属/金属合金过渡层的原子与衬底的原子的混合。以这种方式，保持可以形成LED结构的晶体结构。

4. 发明授权

US08134163B2 Light-emitting diodes on concave texture substrate 有权
标题翻译：凹面纹理基板上的发光二极管
公开(公告)号：US08134163B2
公开(公告)日：2012-03-13
申请号：US12247895
申请日：2008-10-08
申请人： Chen-Hua Yu , Hung-Ta Lin , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu
发明人： Chen-Hua Yu , Hung-Ta Lin , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu
IPC分类号： H01L33/08
CPC分类号： H01L33/48 , H01L33/20 , H01L33/24
摘要： A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.
摘要翻译：提供了一种形成在凹面纹理基板上的发光二极管（LED）的半导体器件。对衬底进行图案化和蚀刻以形成凹陷。沿着凹部的底部形成分离层。沿着侧壁和任选地沿着相邻凹部之间的基板的表面形成LED结构。在这些实施例中，与平面表面相比，LED结构的表面积增加。在另一个实施例中，LED结构形成在凹部内，使得底部接触层与凹部的拓扑不一致。在这些实施例中，硅衬底中的凹陷导致底接触层中的立方结构，例如具有非极性特性并且表现出更高外部量子效率的n-GaN层。

5. 发明申请

US20100068866A1 III-V Compound Semiconductor Epitaxy From a Non-III-V Substrate 有权
标题翻译： III-V族化合物半导体外延从非III-V基片
公开(公告)号：US20100068866A1
公开(公告)日：2010-03-18
申请号：US12539374
申请日：2009-08-11
申请人： Chia-Lin Yu , Chen-Hua Yu , Ding-Yuan Chen , Wen-Chih Chiou
发明人： Chia-Lin Yu , Chen-Hua Yu , Ding-Yuan Chen , Wen-Chih Chiou
IPC分类号： H01L21/768
CPC分类号： H01L21/02365 , H01L21/02104 , H01L21/0237 , H01L21/02381 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/02538 , H01L21/02639 , H01L21/02642 , H01L21/02645 , H01L29/12
摘要： A method of forming a circuit structure includes providing a substrate; forming recesses in the substrate; forming a mask layer over the substrate, wherein the mask layer covers non-recessed portions of the substrate, with the recesses exposed through openings in the mask layer; forming a buffer/nucleation layer on exposed portions of the substrate in the recesses; and growing a group-III group-V (III-V) compound semiconductor material from the recesses until portions of the III-V compound semiconductor material grown from the recesses join each other to form a continuous III-V compound semiconductor layer.
摘要翻译：形成电路结构的方法包括提供基板; 在基板上形成凹部; 在所述基板上形成掩模层，其中所述掩模层覆盖所述基板的非凹部，所述凹部通过所述掩模层中的开口暴露; 在所述凹部中的所述基板的暴露部分上形成缓冲/成核层; 以及从所述凹部生长第III族V族化合物半导体材料，直到从所述凹部生长的所述III-V族化合物半导体材料的部分相互连接形成连续的III-V族化合物半导体层。

6. 发明申请

US20100059779A1 Light-Emitting Diode with Embedded Elements 有权
标题翻译：具有嵌入元件的发光二极管
公开(公告)号：US20100059779A1
公开(公告)日：2010-03-11
申请号：US12547428
申请日：2009-08-25
申请人： Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
发明人： Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/08 , H01L33/20
摘要： A light-emitting diode (LED) device is provided. The LED device has a substrate and an LED structure overlying the substrate. Embedded elements are embedded within one or more layers of the LED structure. In an embodiment, the embedded elements include a dielectric material extending through the LED structure such that the embedded elements are surrounded by the LED structure. In another embodiment, the embedded elements only extend through an upper layer of the LED structure, or alternatively, partially through the upper layer of the LED structure. Another conductive layer may be formed over the upper layer of the LED structure and the embedded elements.
摘要翻译：提供了一种发光二极管（LED）装置。 LED器件具有衬底和覆盖衬底的LED结构。嵌入式元件嵌入LED结构的一层或多层内。在一个实施例中，嵌入元件包括延伸穿过LED结构的电介质材料，使得嵌入元件被LED结构包围。在另一个实施例中，嵌入式元件仅延伸穿过LED结构的上层，或者部分地穿过LED结构的上层。另外的导电层可以形成在LED结构的上层和嵌入元件上。

7. 发明申请

US20100038661A1 Light-Emitting Diode With Non-Metallic Reflector 有权
标题翻译：具有非金属反射器的发光二极管
公开(公告)号：US20100038661A1
公开(公告)日：2010-02-18
申请号：US12269497
申请日：2008-11-12
申请人： Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
发明人： Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/16 , H01L33/0079 , H01L33/10
摘要： A light-emitting diode (LED) device is provided. The LED device has a substrate, a reflective structure over the substrate, and an LED structure over the reflective structure. The reflective structure is formed of non-metallic materials. In one embodiment, the reflective structure is formed of alternating layers of different non-metallic materials having different refractive indices. In another embodiment, the reflective structure is formed of alternating layers of high-porosity silicon and low-porosity silicon. In yet another embodiment, the reflective structure is formed of silicon dioxide, which may allow the use of fewer layers. The reflective structure may be formed directly on the same substrate as the LED structure or formed on a separate substrate and then bonded to the LED structure.
摘要翻译：提供了一种发光二极管（LED）装置。 LED器件具有衬底，衬底上的反射结构以及反射结构上的LED结构。反射结构由非金属材料形成。在一个实施例中，反射结构由具有不同折射率的不同非金属材料的交替层形成。在另一个实施例中，反射结构由高孔隙率硅和低孔隙率硅的交替层形成。在另一个实施例中，反射结构由二氧化硅形成，其可以允许使用更少的层。反射结构可以直接形成在与LED结构相同的基板上，或者形成在单独的基板上，然后结合到LED结构。

8. 发明申请

US20090267105A1 LED Device with Embedded Top Electrode 有权
标题翻译：带嵌入式顶部电极的LED装置
公开(公告)号：US20090267105A1
公开(公告)日：2009-10-29
申请号：US12235269
申请日：2008-09-22
申请人： Chen-Hua Yu , Ding-Yuan Chen , Wen-Chih Chiou
发明人： Chen-Hua Yu , Ding-Yuan Chen , Wen-Chih Chiou
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/005 , H01L33/20 , H01L33/382 , H01L33/405
摘要： An LED device and a method of manufacturing, including an embedded top electrode, are presented. The LED device includes an LED structure and a top electrode. The LED structure includes layers disposed on a substrate, including an active light-emitting region. A top layer of the LED structure is a top contact layer. The top electrode is embedded into the top contact layer, wherein the top electrode electrically contacts the top contact layer.
摘要翻译：提出了一种LED器件及其制造方法，包括嵌入式顶部电极。 LED装置包括LED结构和顶部电极。 LED结构包括设置在基板上的层，包括有源发光区域。 LED结构的顶层是顶部接触层。顶部电极嵌入到顶部接触层中，其中顶部电极电接触顶部接触层。

9. 发明授权

US08803189B2 III-V compound semiconductor epitaxy using lateral overgrowth 有权
标题翻译： III-V化合物半导体外延使用横向过度生长
公开(公告)号：US08803189B2
公开(公告)日：2014-08-12
申请号：US12538701
申请日：2009-08-10
申请人： Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou , Hung-Ta Lin
发明人： Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou , Hung-Ta Lin
IPC分类号： H01L33/00
CPC分类号： H01L21/8258 , H01L21/0237 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02642 , H01L21/02645 , H01L29/2003 , H01L29/66462 , H01L33/007
摘要： A circuit structure includes a substrate; a patterned mask layer over the substrate, wherein the patterned mask layer includes a plurality of gaps; and a group-III group-V (III-V) compound semiconductor layer. The III-V compound semiconductor layer includes a first portion over the mask layer and second portions in the gaps, wherein the III-V compound semiconductor layer overlies a buffer/nucleation layer.
摘要翻译：电路结构包括基板; 在所述衬底上的图案化掩模层，其中所述图案化掩模层包括多个间隙; 和III族V族（III-V）族化合物半导体层。 III-V族化合物半导体层包括掩模层上的第一部分和间隙中的第二部分，其中III-V族化合物半导体层覆盖缓冲层/成核层。

10. 发明授权

US08525200B2 Light-emitting diode with non-metallic reflector 有权
标题翻译：具有非金属反射器的发光二极管
公开(公告)号：US08525200B2
公开(公告)日：2013-09-03
申请号：US12269497
申请日：2008-11-12
申请人： Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
发明人： Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/16 , H01L33/0079 , H01L33/10
摘要： A light-emitting diode (LED) device is provided. The LED device has a substrate, a reflective structure over the substrate, and an LED structure over the reflective structure. The reflective structure is formed of non-metallic materials. In one embodiment, the reflective structure is formed of alternating layers of different non-metallic materials having different refractive indices. In another embodiment, the reflective structure is formed of alternating layers of high-porosity silicon and low-porosity silicon. In yet another embodiment, the reflective structure is formed of silicon dioxide, which may allow the use of fewer layers. The reflective structure may be formed directly on the same substrate as the LED structure or formed on a separate substrate and then bonded to the LED structure.
摘要翻译：提供了一种发光二极管（LED）装置。 LED器件具有衬底，衬底上的反射结构以及反射结构上的LED结构。反射结构由非金属材料形成。在一个实施例中，反射结构由具有不同折射率的不同非金属材料的交替层形成。在另一个实施例中，反射结构由高孔隙率硅和低孔隙率硅的交替层形成。在另一个实施例中，反射结构由二氧化硅形成，其可以允许使用更少的层。反射结构可以直接形成在与LED结构相同的基板上，或者形成在单独的基板上，然后结合到LED结构。

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