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    • 2. 发明授权
    • Light-emitting diodes on concave texture substrate
    • 凹面纹理基板上的发光二极管
    • US08134163B2
    • 2012-03-13
    • US12247895
    • 2008-10-08
    • Chen-Hua YuHung-Ta LinWen-Chih ChiouDing-Yuan ChenChia-Lin Yu
    • Chen-Hua YuHung-Ta LinWen-Chih ChiouDing-Yuan ChenChia-Lin Yu
    • H01L33/08
    • H01L33/48H01L33/20H01L33/24
    • A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.
    • 提供了一种形成在凹面纹理基板上的发光二极管(LED)的半导体器件。 对衬底进行图案化和蚀刻以形成凹陷。 沿着凹部的底部形成分离层。 沿着侧壁和任选地沿着相邻凹部之间的基板的表面形成LED结构。 在这些实施例中,与平面表面相比,LED结构的表面积增加。 在另一个实施例中,LED结构形成在凹部内,使得底部接触层与凹部的拓扑不一致。 在这些实施例中,硅衬底中的凹陷导致底接触层中的立方结构,例如具有非极性特性并且表现出更高外部量子效率的n-GaN层。
    • 3. 发明授权
    • Light-emitting diodes on concave texture substrate
    • 凹面纹理基板上的发光二极管
    • US08629465B2
    • 2014-01-14
    • US13358327
    • 2012-01-25
    • Chen-Hua YuHung-Ta LinWen-Chih ChiouDing-Yuan ChenChia-Lin Yu
    • Chen-Hua YuHung-Ta LinWen-Chih ChiouDing-Yuan ChenChia-Lin Yu
    • H01L33/08
    • H01L33/48H01L33/20H01L33/24
    • A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.
    • 提供了一种形成在凹面纹理基板上的发光二极管(LED)的半导体器件。 对衬底进行图案化和蚀刻以形成凹陷。 沿着凹部的底部形成分离层。 沿着侧壁和任选地沿着相邻凹部之间的基板的表面形成LED结构。 在这些实施例中,与平面表面相比,LED结构的表面积增加。 在另一个实施例中,LED结构形成在凹部内,使得底部接触层与凹部的拓扑不一致。 在这些实施例中,硅衬底中的凹槽导致底接触层中的立方结构,例如具有非极性特性并且表现出更高外部量子效率的n-GaN层。
    • 8. 发明申请
    • Light-Emitting Diodes on Concave Texture Substrate
    • 凹面纹理基板上的发光二极管
    • US20100032700A1
    • 2010-02-11
    • US12247895
    • 2008-10-08
    • Chen-Hua YuHung-Ta LinWen-Chih ChiouDing-Yuan ChenChia-Lin Yu
    • Chen-Hua YuHung-Ta LinWen-Chih ChiouDing-Yuan ChenChia-Lin Yu
    • H01L33/00
    • H01L33/48H01L33/20H01L33/24
    • A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.
    • 提供了一种形成在凹面纹理基板上的发光二极管(LED)的半导体器件。 对衬底进行图案化和蚀刻以形成凹陷。 沿着凹部的底部形成分离层。 沿着侧壁和任选地沿着相邻凹部之间的基板的表面形成LED结构。 在这些实施例中,与平面表面相比,LED结构的表面积增加。 在另一个实施例中,LED结构形成在凹部内,使得底部接触层与凹部的拓扑不一致。 在这些实施例中,硅衬底中的凹陷导致底接触层中的立方结构,例如具有非极性特性并且表现出更高外部量子效率的n-GaN层。