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1. 发明授权

US08629465B2 Light-emitting diodes on concave texture substrate 有权
标题翻译：凹面纹理基板上的发光二极管
公开(公告)号：US08629465B2
公开(公告)日：2014-01-14
申请号：US13358327
申请日：2012-01-25
申请人： Chen-Hua Yu , Hung-Ta Lin , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu
发明人： Chen-Hua Yu , Hung-Ta Lin , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu
IPC分类号： H01L33/08
CPC分类号： H01L33/48 , H01L33/20 , H01L33/24
摘要： A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.
摘要翻译：提供了一种形成在凹面纹理基板上的发光二极管（LED）的半导体器件。对衬底进行图案化和蚀刻以形成凹陷。沿着凹部的底部形成分离层。沿着侧壁和任选地沿着相邻凹部之间的基板的表面形成LED结构。在这些实施例中，与平面表面相比，LED结构的表面积增加。在另一个实施例中，LED结构形成在凹部内，使得底部接触层与凹部的拓扑不一致。在这些实施例中，硅衬底中的凹槽导致底接触层中的立方结构，例如具有非极性特性并且表现出更高外部量子效率的n-GaN层。

2. 发明申请

US20120025234A1 Light-Emitting Diode with Textured Substrate 有权
标题翻译：发光二极管与纹理基板
公开(公告)号：US20120025234A1
公开(公告)日：2012-02-02
申请号：US13267701
申请日：2011-10-06
申请人： Chen-Hua Yu , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu , Hung-Ta Lin
发明人： Chen-Hua Yu , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu , Hung-Ta Lin
IPC分类号： H01L33/06
CPC分类号： H01L33/22 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/24 , H01L33/32
摘要： A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.
摘要翻译：提供了一种发光二极管（LED）装置。 LED装置已经凸起形成在基板上的半导体区域。在凸起的半导体区域上形成LED结构，使得LED器件的底部接触层和有源层是保形层。顶部接触层具有平坦的表面。在一个实施例中，顶部接触层在多个凸起的半导体区域上是连续的，而底部接触层和有源层在相邻凸起的半导体区域之间是不连续的。

3. 发明申请

US20110189837A1 Realizing N-Face III-Nitride Semiconductors by Nitridation Treatment 有权
标题翻译：通过氮化处理实现N面III氮化物半导体
公开(公告)号：US20110189837A1
公开(公告)日：2011-08-04
申请号：US12972184
申请日：2010-12-17
申请人： Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou
发明人： Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou
IPC分类号： H01L21/20
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02617 , H01L21/02664
摘要： A method of forming a semiconductor structure includes providing a substrate; forming a buffer/nucleation layer over the substrate; forming a group-III nitride (III-nitride) layer over the buffer/nucleation layer; and subjecting the III-nitride layer to a nitridation. The step of forming the III-nitride layer comprises metal organic chemical vapor deposition.
摘要翻译：形成半导体结构的方法包括提供基板; 在衬底上形成缓冲/成核层; 在缓冲/成核层上形成III族氮化物（III族氮化物）层; 并对该III族氮化物层进行氮化。形成III族氮化物层的步骤包括金属有机化学气相沉积。

4. 发明申请

US20100032696A1 Light-Emitting Diode with Textured Substrate 有权
标题翻译：发光二极管与纹理基板
公开(公告)号：US20100032696A1
公开(公告)日：2010-02-11
申请号：US12189635
申请日：2008-08-11
申请人： Chen-Hua Yu , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu , Hung-Ta Lin
发明人： Chen-Hua Yu , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu , Hung-Ta Lin
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/24 , H01L33/32
摘要： A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.
摘要翻译：提供了一种发光二极管（LED）装置。 LED装置已经凸起形成在基板上的半导体区域。在凸起的半导体区域上形成LED结构，使得LED器件的底部接触层和有源层是保形层。顶部接触层具有平坦的表面。在一个实施例中，顶部接触层在多个凸起的半导体区域上是连续的，而底部接触层和有源层在相邻凸起的半导体区域之间是不连续的。

5. 发明申请

US20090272975A1 Poly-Crystalline Layer Structure for Light-Emitting Diodes 审中-公开
标题翻译：发光二极管的多结晶层结构
公开(公告)号：US20090272975A1
公开(公告)日：2009-11-05
申请号：US12189558
申请日：2008-08-11
申请人： Ding-Yuan Chen , Wen-Chih Chiou , Chia-Lin Yu , Chen-Hua Yu
发明人： Ding-Yuan Chen , Wen-Chih Chiou , Chia-Lin Yu , Chen-Hua Yu
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0245 , H01L21/02513 , H01L21/0254 , H01L21/02595
摘要： A structure and method for a light-emitting diode are presented. A preferred embodiment comprises a substrate with a conductive, poly-crystalline, silicon-containing layer over the substrate. A first contact layer is epitaxially grown, using the conductive, poly-crystalline, silicon-containing layer as a nucleation layer. An active layer is formed over the first contact layer, and a second contact layer is formed over the active layer.
摘要翻译：提出了一种发光二极管的结构和方法。优选的实施方案包括在衬底上具有导电的，多晶的含硅层的衬底。使用导电多晶硅层作为成核层，外延生长第一接触层。在第一接触层上形成有源层，并且在有源层上形成第二接触层。

6. 发明授权

US08803189B2 III-V compound semiconductor epitaxy using lateral overgrowth 有权
标题翻译： III-V化合物半导体外延使用横向过度生长
公开(公告)号：US08803189B2
公开(公告)日：2014-08-12
申请号：US12538701
申请日：2009-08-10
申请人： Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou , Hung-Ta Lin
发明人： Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou , Hung-Ta Lin
IPC分类号： H01L33/00
CPC分类号： H01L21/8258 , H01L21/0237 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02642 , H01L21/02645 , H01L29/2003 , H01L29/66462 , H01L33/007
摘要： A circuit structure includes a substrate; a patterned mask layer over the substrate, wherein the patterned mask layer includes a plurality of gaps; and a group-III group-V (III-V) compound semiconductor layer. The III-V compound semiconductor layer includes a first portion over the mask layer and second portions in the gaps, wherein the III-V compound semiconductor layer overlies a buffer/nucleation layer.
摘要翻译：电路结构包括基板; 在所述衬底上的图案化掩模层，其中所述图案化掩模层包括多个间隙; 和III族V族（III-V）族化合物半导体层。 III-V族化合物半导体层包括掩模层上的第一部分和间隙中的第二部分，其中III-V族化合物半导体层覆盖缓冲层/成核层。

7. 发明申请

US20100044719A1 III-V Compound Semiconductor Epitaxy Using Lateral Overgrowth 有权
标题翻译： III-V化合物半导体外延使用横向过度生长
公开(公告)号：US20100044719A1
公开(公告)日：2010-02-25
申请号：US12538701
申请日：2009-08-10
申请人： Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou , Hung-Ta Lin
发明人： Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou , Hung-Ta Lin
IPC分类号： H01L29/20
CPC分类号： H01L21/8258 , H01L21/0237 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02642 , H01L21/02645 , H01L29/2003 , H01L29/66462 , H01L33/007
摘要： A circuit structure includes a substrate; a patterned mask layer over the substrate, wherein the patterned mask layer includes a plurality of gaps; and a group-III group-V (III-V) compound semiconductor layer. The III-V compound semiconductor layer includes a first portion over the mask layer and second portions in the gaps, wherein the III-V compound semiconductor layer overlies a buffer/nucleation layer.
摘要翻译：电路结构包括基板; 在所述衬底上的图案化掩模层，其中所述图案化掩模层包括多个间隙; 和III族V族（III-V）族化合物半导体层。 III-V族化合物半导体层包括掩模层上的第一部分和间隙中的第二部分，其中III-V族化合物半导体层覆盖缓冲层/成核层。

8. 发明申请

US20100038655A1 Reflective Layer for Light-Emitting Diodes 有权
标题翻译：发光二极管反射层
公开(公告)号：US20100038655A1
公开(公告)日：2010-02-18
申请号：US12270309
申请日：2008-11-13
申请人： Ding-Yuan Chen , Chia-Lin Yu , Chen-Hua Yu , Wen-Chih Chiou
发明人： Ding-Yuan Chen , Chia-Lin Yu , Chen-Hua Yu , Wen-Chih Chiou
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L27/15 , H01L27/156 , H01L33/06 , H01L33/08 , H01L33/30 , H01L33/32 , H01L33/42 , H01L33/60
摘要： A system and method for manufacturing a light-generating device is described. A preferred embodiment comprises a plurality of LEDs formed on a substrate. Each LED preferably has spacers along the sidewalls of the LED, and a reflective surface is formed on the substrate between the LEDs. The reflective surface is preferably located lower than the active layer of the individual LEDs.
摘要翻译：描述了用于制造发光装置的系统和方法。优选实施例包括形成在基板上的多个LED。每个LED优选地具有沿LED的侧壁的间隔物，并且在LED之间的基板上形成反射表面。反射表面优选地位于比各个LED的有源层更低的位置。

9. 发明申请

US20100032700A1 Light-Emitting Diodes on Concave Texture Substrate 有权
标题翻译：凹面纹理基板上的发光二极管
公开(公告)号：US20100032700A1
公开(公告)日：2010-02-11
申请号：US12247895
申请日：2008-10-08
申请人： Chen-Hua Yu , Hung-Ta Lin , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu
发明人： Chen-Hua Yu , Hung-Ta Lin , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu
IPC分类号： H01L33/00
CPC分类号： H01L33/48 , H01L33/20 , H01L33/24
摘要： A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.
摘要翻译：提供了一种形成在凹面纹理基板上的发光二极管（LED）的半导体器件。对衬底进行图案化和蚀刻以形成凹陷。沿着凹部的底部形成分离层。沿着侧壁和任选地沿着相邻凹部之间的基板的表面形成LED结构。在这些实施例中，与平面表面相比，LED结构的表面积增加。在另一个实施例中，LED结构形成在凹部内，使得底部接触层与凹部的拓扑不一致。在这些实施例中，硅衬底中的凹陷导致底接触层中的立方结构，例如具有非极性特性并且表现出更高外部量子效率的n-GaN层。

10. 发明申请

US20100001257A1 Stress-Alleviation Layer for LED Structures 有权
标题翻译： LED结构应力消除层
公开(公告)号：US20100001257A1
公开(公告)日：2010-01-07
申请号：US12179160
申请日：2008-07-24
申请人： Chen-Hua Yu , Hung-Ta Lin , Ding-Yuan Chen , Wen-Chih Chiou , Chia-Lin Yu
发明人： Chen-Hua Yu , Hung-Ta Lin , Ding-Yuan Chen , Wen-Chih Chiou , Chia-Lin Yu
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/005 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12
摘要： A light emitting diodes (LEDs) is presented. The LED includes a stress-alleviation layer on a substrate. Open regions and stress-alleviation layer regions are formed on the substrate. Epitaxial layers are disposed on the substrate, at least in the open regions therein, thereby forming an LED structure. The substrate is diced through at least a first portion of the stress-alleviation regions, thereby forming the plurality of LEDs.
摘要翻译：提供了发光二极管（LED）。 LED在衬底上包括应力消除层。在基板上形成开放区域和应力缓和层区域。外延层至少在其中的开放区域中设置在基板上，从而形成LED结构。通过应力缓解区域的至少第一部分切割衬底，从而形成多个LED。

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