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1. 发明申请

US20140065540A1 PHOTORESIST AND COATED SUBSTRATE COMPRISING SAME 审中-公开
标题翻译：包含它们的光电子和涂层基底
公开(公告)号：US20140065540A1
公开(公告)日：2014-03-06
申请号：US14076724
申请日：2013-11-11
申请人： Deyan Wang , Chunyi Wu , Cong Liu , Gerhard Pohlers , Cheng-bai Xu , George G. Barclay
发明人： Deyan Wang , Chunyi Wu , Cong Liu , Gerhard Pohlers , Cheng-bai Xu , George G. Barclay
IPC分类号： G03F7/004
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/24 , C08F220/32 , C08F220/34 , C08F220/36 , C08F220/38 , C08F220/58 , C08F226/06 , C08F2220/1833 , C08F2220/283 , G03F7/0045 , G03F7/0046 , G03F7/09 , G03F7/2041
摘要： A polymer includes the polymerized product of monomers including a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II): wherein a, L1, LN, Ra, Rb, Rc, and X are defined herein. The polymer is a useful component of a photoresist composition.
摘要翻译：聚合物包括包含式（Ia），式（Ib）或式（Ia）和（Ib）的组合的含氮单体的单体的聚合产物和具有式（II）的酸可脱保护的单体，：其中a，L1，LN，Ra，Rb，Rc和X在本文中定义。聚合物是光致抗蚀剂组合物的有用组分。

2. 发明授权

US08722825B2 Surface active additive and photoresist composition comprising same 有权
标题翻译：包含其的表面活性添加剂和光致抗蚀剂组合物
公开(公告)号：US08722825B2
公开(公告)日：2014-05-13
申请号：US13482574
申请日：2012-05-29
申请人： Deyan Wang , Chunyi Wu , Cong Liu , Gerhard Pohlers , Cheng-bai Xu , George G. Barclay
发明人： Deyan Wang , Chunyi Wu , Cong Liu , Gerhard Pohlers , Cheng-bai Xu , George G. Barclay
IPC分类号： C08F226/06 , C08F214/18 , C08F220/34
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/24 , C08F220/32 , C08F220/34 , C08F220/36 , C08F220/38 , C08F220/58 , C08F226/06 , C08F2220/1833 , C08F2220/283 , G03F7/0045 , G03F7/0046 , G03F7/09 , G03F7/2041
摘要： A polymer comprises the polymerized product of monomers comprising a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II): wherein a is 0 or 1, each Ra is independently H, F, C1-10 alkyl, or C1-10 fluoroalkyl, L1 is a straight chain or branched C1-20 alkylene group, or a monocyclic, polycyclic, or fused polycyclic C3-20 cycloalkylene group, each Rb is independently H, C1-10 alkyl, C3-20 cycloalkyl, C3-20 heterocycloalkyl, an aliphatic C5-20 oxycarbonyl, or a C1-30 acyl group optionally including a heteroatom substituent group, where each Rb is separate or at least one Rb is attached to an adjacent Rb; LN is a nitrogen-containing monocyclic, polycyclic, or fused polycyclic C3-20 heterocycloalkylene group, and X is H, C1-10 alkyl, aliphatic C5-20 oxycarbonyl, or a C1-30 acyl group optionally including a heteroatom substituent group; and each Rc is independently C1-10 alkyl, C3-20 cycloalkyl, or C3-20 heterocycloalkyl, wherein each Rc is separate or at least one Rc is attached to an adjacent Rc.
摘要翻译：聚合物包含包含式（Ia），式（Ib）或式（Ia）和（Ib）的组合的含氮单体的单体的聚合产物和具有式（II）的酸可去保护的单体，：其中a为0或1，每个R a独立地为H，F，C 1-10烷基或C 1-10氟烷基，L 1为直链或支链C 1-20亚烷基，或单环，多环或稠合多环C3 -20个亚环烷基，每个R b独立地为H，C 1-10烷基，C 3-20环烷基，C 3-20杂环烷基，脂族C 5-20氧羰基或任选地包含杂原子取代基的C1-30酰基，其中每个R b 是分开的或至少一个Rb连接到相邻的Rb; LN是含氮单环，多环或稠合多环C 3-20杂环亚烷基，X是H，C 1-10烷基，脂肪族C 5-20氧羰基或任选包含杂原子取代基的C 1-3酰基; 并且每个R c独立地为C 1-10烷基，C 3-20环烷基或C 3-20杂环烷基，其中每个R c是分开的或至少一个R c连接到相邻的Rc。

3. 发明申请

US20130137035A1 SURFACE ACTIVE ADDITIVE AND PHOTORESIST COMPOSITION COMPRISING SAME 有权
标题翻译：表面活性添加剂和包含其的光电组合物
公开(公告)号：US20130137035A1
公开(公告)日：2013-05-30
申请号：US13482574
申请日：2012-05-29
申请人： Deyan Wang , Chunyi Wu , Cong Liu , Gerhard Pohlers , Cheng-bai Xu , George G. Barclay
发明人： Deyan Wang , Chunyi Wu , Cong Liu , Gerhard Pohlers , Cheng-bai Xu , George G. Barclay
IPC分类号： C08F220/34 , C08F226/06
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/24 , C08F220/32 , C08F220/34 , C08F220/36 , C08F220/38 , C08F220/58 , C08F226/06 , C08F2220/1833 , C08F2220/283 , G03F7/0045 , G03F7/0046 , G03F7/09 , G03F7/2041
摘要： A polymer comprises the polymerized product of monomers comprising a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II): wherein a is 0 or 1, each Ra is independently H, F, C1-10 alkyl, or C1-10 fluoroalkyl, L1 is a straight chain or branched C1-20 alkylene group, or a monocyclic, polycyclic, or fused polycyclic C3-20 cycloalkylene group, each Rb is independently H, C1-10 alkyl, C3-20 cycloalkyl, C3-20 heterocycloalkyl, an aliphatic C5-20 oxycarbonyl, or a C1-30 acyl group optionally including a heteroatom substituent group, where each Rb is separate or at least one Rb is attached to an adjacent Rb; LN is a nitrogen-containing monocyclic, polycyclic, or fused polycyclic C3-20 heterocycloalkylene group, and X is H, C1-10 alkyl, aliphatic C5-20 oxycarbonyl, or a C1-30 acyl group optionally including a heteroatom substituent group; and each Rc is independently C1-10 alkyl, C3-20 cycloalkyl, or C3-20 heterocycloalkyl, wherein each Rc is separate or at least one Rc is attached to an adjacent Rc.
摘要翻译：聚合物包含包含式（Ia），式（Ib）或式（Ia）和（Ib）的组合的含氮单体的单体的聚合产物和具有式（II）的酸可去保护的单体，：其中a为0或1，每个R a独立地为H，F，C 1-10烷基或C 1-10氟烷基，L 1为直链或支链C 1-20亚烷基，或单环，多环或稠合多环C3 -20个亚环烷基，每个R b独立地为H，C 1-10烷基，C 3-20环烷基，C 3-20杂环烷基，脂族C 5-20氧羰基或任选地包含杂原子取代基的C1-30酰基，其中每个R b 是分开的或至少一个Rb连接到相邻的Rb; LN是含氮单环，多环或稠合多环C 3-20杂环亚烷基，X是H，C 1-10烷基，脂肪族C 5-20氧羰基或任选包含杂原子取代基的C 1-3酰基; 并且每个R c独立地为C 1-10烷基，C 3-20环烷基或C 3-20杂环烷基，其中每个R c是分开的或至少一个R c连接到相邻的Rc。

4. 发明授权

US09507260B2 Compositions and processes for photolithography 有权
标题翻译：光刻的组成和工艺
公开(公告)号：US09507260B2
公开(公告)日：2016-11-29
申请号：US12592160
申请日：2009-11-19
申请人： Deyan Wang , Chunyi Wu , Cheng-Bai Xu , George G. Barclay
发明人： Deyan Wang , Chunyi Wu , Cheng-Bai Xu , George G. Barclay
IPC分类号： G03F7/039 , G03F7/20 , G03F7/004 , G03F7/038 , G03F7/11 , G03F7/075
CPC分类号： G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/0757 , G03F7/11 , G03F7/2041
摘要： New photoresist compositions are provided that are useful for immersion lithography. In one preferred aspect, photoresist composition are provided that comprise: (i) one or more resins that comprise photoacid-labile groups, (ii) a photoactive component, and (iii) one or more materials that comprise photoacid labile groups and that are distinct from the one or more resins; wherein the deprotection activation energy of photoacid-labile groups of the one or more materials is about the same as or lower than the deprotection activation energy of photoacid-labile groups of the one or more resins. In another preferred aspect, photoresist compositions are provided that comprise (i) one or more resins, (ii) a photoactive component, and (iii) one or more materials that comprise a sufficient amount of acidic groups to provide a dark field dissolution rate of at least one angstrom per second.
摘要翻译：提供了可用于浸没式光刻的新的光致抗蚀剂组合物。在一个优选的方面，提供光致抗蚀剂组合物，其包含：（i）一种或多种包含光酸不稳定基团的树脂，（ii）光活性组分，和（iii）一种或多种包含光致酸不稳定基团并且是不同的从一种或多种树脂; 其中所述一种或多种材料的光致酸不稳定基团的去保护活化能大约等于或低于所述一种或多种树脂的光致酸不稳定基团的去保护活化能。在另一个优选的方面，提供光致抗蚀剂组合物，其包含（i）一种或多种树脂，（ii）光活性组分，和（iii）一种或多种包含足够量的酸性基团以提供暗场溶解速率的材料每秒至少一埃。

5. 发明授权

US09005880B2 Compositions comprising sulfonamide material and processes for photolithography 有权
标题翻译：包含磺酰胺材料的组合物和用于光刻的方法
公开(公告)号：US09005880B2
公开(公告)日：2015-04-14
申请号：US12592159
申请日：2009-11-19
申请人： Deyan Wang , Chunyi Wu , George G. Barclay , Cheng-Bai Xu
发明人： Deyan Wang , Chunyi Wu , George G. Barclay , Cheng-Bai Xu
IPC分类号： G03F7/20 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/075
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/0048 , G03F7/0382 , G03F7/039 , G03F7/0392 , G03F7/0757
摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
摘要翻译：提供了可用于浸没式光刻的新的光致抗蚀剂组合物。本发明优选的光致抗蚀剂组合物包含一种或多种具有磺酰胺取代基的材料。本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸没流体中。

6. 发明申请

US20100304290A1 Compositions and processes for photolithography 有权
标题翻译：光刻的组成和工艺
公开(公告)号：US20100304290A1
公开(公告)日：2010-12-02
申请号：US12592160
申请日：2009-11-19
申请人： Deyan Wang , Chunyi Wu , Cheng-Bai Xu , George G. Barclay
发明人： Deyan Wang , Chunyi Wu , Cheng-Bai Xu , George G. Barclay
IPC分类号： G03F7/20 , G03B27/52 , G03F7/004
CPC分类号： G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/0757 , G03F7/11 , G03F7/2041
摘要： New photoresist compositions are provided that are useful for immersion lithography. In one preferred aspect, photoresist composition are provided that comprise: (i) one or more resins that comprise photoacid-labile groups, (ii) a photoactive component, and (iii) one or more materials that comprise photoacid labile groups and that are distinct from the one or more resins; wherein the deprotection activation energy of photoacid-labile groups of the one or more materials is about the same as or lower than the deprotection activation energy of photoacid-labile groups of the one or more resins. In another preferred aspect, photoresist compositions are provided that comprise (i) one or more resins, (ii) a photoactive component, and (iii) one or more materials that comprise a sufficient amount of acidic groups to provide a dark field dissolution rate of at least one angstrom per second.
摘要翻译：提供了可用于浸没式光刻的新的光致抗蚀剂组合物。在一个优选的方面，提供光致抗蚀剂组合物，其包含：（i）一种或多种包含光酸不稳定基团的树脂，（ii）光活性组分，和（iii）一种或多种包含光致酸不稳定基团并且是不同的从一种或多种树脂; 其中所述一种或多种材料的光致酸不稳定基团的去保护活化能大约等于或低于所述一种或多种树脂的光致酸不稳定基团的去保护活化能。在另一个优选的方面，提供光致抗蚀剂组合物，其包含（i）一种或多种树脂，（ii）光活性组分，和（iii）一种或多种包含足够量的酸性基团以提供暗场溶解速率的材料每秒至少一埃。

7. 发明申请

US20100297550A1 Compositions comprising sulfonamide material and processes for photolithography 审中-公开
标题翻译：包含磺酰胺材料的组合物和用于光刻的方法
公开(公告)号：US20100297550A1
公开(公告)日：2010-11-25
申请号：US12592159
申请日：2009-11-19
申请人： Deyan Wang , Chunyi Wu , George G. Barclay , Cheng-Bai Xu
发明人： Deyan Wang , Chunyi Wu , George G. Barclay , Cheng-Bai Xu
IPC分类号： G03F7/20 , G03B27/52 , G03F7/004
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/0048 , G03F7/0382 , G03F7/039 , G03F7/0392 , G03F7/0757
摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
摘要翻译：提供了可用于浸没式光刻的新的光致抗蚀剂组合物。本发明优选的光致抗蚀剂组合物包含一种或多种具有磺酰胺取代基的材料。本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸没流体中。

8. 发明申请

US20090117489A1 Compositons and processes for immersion lithography 有权
标题翻译：浸入式光刻的组合物和工艺
公开(公告)号：US20090117489A1
公开(公告)日：2009-05-07
申请号：US12290980
申请日：2008-11-05
申请人： Deyan Wang , Cheng-Bai Xu , George G. Barclay
发明人： Deyan Wang , Cheng-Bai Xu , George G. Barclay
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/2041 , C08F220/22 , C08F220/24 , C08F220/26 , G03F7/0046 , G03F7/038 , G03F7/0392 , G03F7/0757 , H01L21/0274
摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
摘要翻译：提供了可用于浸没式光刻的新的光致抗蚀剂组合物。本发明优选的光致抗蚀剂组合物包含两种或多种不同的材料，其可以与抗蚀剂的树脂组分基本上不可混合。本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸没流体中。

9. 发明授权

US10359698B2 Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography 有权
公开(公告)号：US10359698B2
公开(公告)日：2019-07-23
申请号：US12592156
申请日：2009-11-19
申请人： Deyan Wang , Cheng-Bai Xu , George G. Barclay
发明人： Deyan Wang , Cheng-Bai Xu , George G. Barclay
IPC分类号： G03F7/004 , G03F7/20 , G03F7/038 , G03F7/039
摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises one or more materials that have hetero-substituted carbocyclic aryl groups. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

10. 发明授权

US08871428B2 Compositions and processes for immersion lithography 有权
标题翻译：浸没光刻的组成和工艺
公开(公告)号：US08871428B2
公开(公告)日：2014-10-28
申请号：US13602259
申请日：2012-09-03
申请人： Deyan Wang , Cheng-Bai Xu , George G. Barclay
发明人： Deyan Wang , Cheng-Bai Xu , George G. Barclay
IPC分类号： G03F7/004 , G03F7/20 , G03F7/028
CPC分类号： G03F7/2041 , C08F220/22 , C08F220/24 , C08F220/26 , G03F7/0046 , G03F7/038 , G03F7/0392 , G03F7/0757 , H01L21/0274
摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
摘要翻译：提供了可用于浸没式光刻的新的光致抗蚀剂组合物。本发明优选的光致抗蚀剂组合物包含两种或多种不同的材料，其可以与抗蚀剂的树脂组分基本上不可混合。本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸没流体中。

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