专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08722825B2 Surface active additive and photoresist composition comprising same 有权
标题翻译：包含其的表面活性添加剂和光致抗蚀剂组合物
公开(公告)号：US08722825B2
公开(公告)日：2014-05-13
申请号：US13482574
申请日：2012-05-29
申请人： Deyan Wang , Chunyi Wu , Cong Liu , Gerhard Pohlers , Cheng-bai Xu , George G. Barclay
发明人： Deyan Wang , Chunyi Wu , Cong Liu , Gerhard Pohlers , Cheng-bai Xu , George G. Barclay
IPC分类号： C08F226/06 , C08F214/18 , C08F220/34
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/24 , C08F220/32 , C08F220/34 , C08F220/36 , C08F220/38 , C08F220/58 , C08F226/06 , C08F2220/1833 , C08F2220/283 , G03F7/0045 , G03F7/0046 , G03F7/09 , G03F7/2041
摘要： A polymer comprises the polymerized product of monomers comprising a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II): wherein a is 0 or 1, each Ra is independently H, F, C1-10 alkyl, or C1-10 fluoroalkyl, L1 is a straight chain or branched C1-20 alkylene group, or a monocyclic, polycyclic, or fused polycyclic C3-20 cycloalkylene group, each Rb is independently H, C1-10 alkyl, C3-20 cycloalkyl, C3-20 heterocycloalkyl, an aliphatic C5-20 oxycarbonyl, or a C1-30 acyl group optionally including a heteroatom substituent group, where each Rb is separate or at least one Rb is attached to an adjacent Rb; LN is a nitrogen-containing monocyclic, polycyclic, or fused polycyclic C3-20 heterocycloalkylene group, and X is H, C1-10 alkyl, aliphatic C5-20 oxycarbonyl, or a C1-30 acyl group optionally including a heteroatom substituent group; and each Rc is independently C1-10 alkyl, C3-20 cycloalkyl, or C3-20 heterocycloalkyl, wherein each Rc is separate or at least one Rc is attached to an adjacent Rc.
摘要翻译：聚合物包含包含式（Ia），式（Ib）或式（Ia）和（Ib）的组合的含氮单体的单体的聚合产物和具有式（II）的酸可去保护的单体，：其中a为0或1，每个R a独立地为H，F，C 1-10烷基或C 1-10氟烷基，L 1为直链或支链C 1-20亚烷基，或单环，多环或稠合多环C3 -20个亚环烷基，每个R b独立地为H，C 1-10烷基，C 3-20环烷基，C 3-20杂环烷基，脂族C 5-20氧羰基或任选地包含杂原子取代基的C1-30酰基，其中每个R b 是分开的或至少一个Rb连接到相邻的Rb; LN是含氮单环，多环或稠合多环C 3-20杂环亚烷基，X是H，C 1-10烷基，脂肪族C 5-20氧羰基或任选包含杂原子取代基的C 1-3酰基; 并且每个R c独立地为C 1-10烷基，C 3-20环烷基或C 3-20杂环烷基，其中每个R c是分开的或至少一个R c连接到相邻的Rc。

2. 发明申请

US20130137035A1 SURFACE ACTIVE ADDITIVE AND PHOTORESIST COMPOSITION COMPRISING SAME 有权
标题翻译：表面活性添加剂和包含其的光电组合物
公开(公告)号：US20130137035A1
公开(公告)日：2013-05-30
申请号：US13482574
申请日：2012-05-29
申请人： Deyan Wang , Chunyi Wu , Cong Liu , Gerhard Pohlers , Cheng-bai Xu , George G. Barclay
发明人： Deyan Wang , Chunyi Wu , Cong Liu , Gerhard Pohlers , Cheng-bai Xu , George G. Barclay
IPC分类号： C08F220/34 , C08F226/06
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/24 , C08F220/32 , C08F220/34 , C08F220/36 , C08F220/38 , C08F220/58 , C08F226/06 , C08F2220/1833 , C08F2220/283 , G03F7/0045 , G03F7/0046 , G03F7/09 , G03F7/2041
摘要： A polymer comprises the polymerized product of monomers comprising a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II): wherein a is 0 or 1, each Ra is independently H, F, C1-10 alkyl, or C1-10 fluoroalkyl, L1 is a straight chain or branched C1-20 alkylene group, or a monocyclic, polycyclic, or fused polycyclic C3-20 cycloalkylene group, each Rb is independently H, C1-10 alkyl, C3-20 cycloalkyl, C3-20 heterocycloalkyl, an aliphatic C5-20 oxycarbonyl, or a C1-30 acyl group optionally including a heteroatom substituent group, where each Rb is separate or at least one Rb is attached to an adjacent Rb; LN is a nitrogen-containing monocyclic, polycyclic, or fused polycyclic C3-20 heterocycloalkylene group, and X is H, C1-10 alkyl, aliphatic C5-20 oxycarbonyl, or a C1-30 acyl group optionally including a heteroatom substituent group; and each Rc is independently C1-10 alkyl, C3-20 cycloalkyl, or C3-20 heterocycloalkyl, wherein each Rc is separate or at least one Rc is attached to an adjacent Rc.
摘要翻译：聚合物包含包含式（Ia），式（Ib）或式（Ia）和（Ib）的组合的含氮单体的单体的聚合产物和具有式（II）的酸可去保护的单体，：其中a为0或1，每个R a独立地为H，F，C 1-10烷基或C 1-10氟烷基，L 1为直链或支链C 1-20亚烷基，或单环，多环或稠合多环C3 -20个亚环烷基，每个R b独立地为H，C 1-10烷基，C 3-20环烷基，C 3-20杂环烷基，脂族C 5-20氧羰基或任选地包含杂原子取代基的C1-30酰基，其中每个R b 是分开的或至少一个Rb连接到相邻的Rb; LN是含氮单环，多环或稠合多环C 3-20杂环亚烷基，X是H，C 1-10烷基，脂肪族C 5-20氧羰基或任选包含杂原子取代基的C 1-3酰基; 并且每个R c独立地为C 1-10烷基，C 3-20环烷基或C 3-20杂环烷基，其中每个R c是分开的或至少一个R c连接到相邻的Rc。

3. 发明申请

US20140065540A1 PHOTORESIST AND COATED SUBSTRATE COMPRISING SAME 审中-公开
标题翻译：包含它们的光电子和涂层基底
公开(公告)号：US20140065540A1
公开(公告)日：2014-03-06
申请号：US14076724
申请日：2013-11-11
申请人： Deyan Wang , Chunyi Wu , Cong Liu , Gerhard Pohlers , Cheng-bai Xu , George G. Barclay
发明人： Deyan Wang , Chunyi Wu , Cong Liu , Gerhard Pohlers , Cheng-bai Xu , George G. Barclay
IPC分类号： G03F7/004
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/24 , C08F220/32 , C08F220/34 , C08F220/36 , C08F220/38 , C08F220/58 , C08F226/06 , C08F2220/1833 , C08F2220/283 , G03F7/0045 , G03F7/0046 , G03F7/09 , G03F7/2041
摘要： A polymer includes the polymerized product of monomers including a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II): wherein a, L1, LN, Ra, Rb, Rc, and X are defined herein. The polymer is a useful component of a photoresist composition.
摘要翻译：聚合物包括包含式（Ia），式（Ib）或式（Ia）和（Ib）的组合的含氮单体的单体的聚合产物和具有式（II）的酸可脱保护的单体，：其中a，L1，LN，Ra，Rb，Rc和X在本文中定义。聚合物是光致抗蚀剂组合物的有用组分。

4. 发明授权

US09005880B2 Compositions comprising sulfonamide material and processes for photolithography 有权
标题翻译：包含磺酰胺材料的组合物和用于光刻的方法
公开(公告)号：US09005880B2
公开(公告)日：2015-04-14
申请号：US12592159
申请日：2009-11-19
申请人： Deyan Wang , Chunyi Wu , George G. Barclay , Cheng-Bai Xu
发明人： Deyan Wang , Chunyi Wu , George G. Barclay , Cheng-Bai Xu
IPC分类号： G03F7/20 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/075
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/0048 , G03F7/0382 , G03F7/039 , G03F7/0392 , G03F7/0757
摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
摘要翻译：提供了可用于浸没式光刻的新的光致抗蚀剂组合物。本发明优选的光致抗蚀剂组合物包含一种或多种具有磺酰胺取代基的材料。本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸没流体中。

5. 发明申请

US20130244178A1 PHOTORESISTS COMPRISING MULTI-AMIDE COMPONENT 审中-公开
标题翻译：包含多个组件的电影
公开(公告)号：US20130244178A1
公开(公告)日：2013-09-19
申请号：US13607728
申请日：2012-09-09
申请人： Gregory P. Prokopowicz , Gerhard Pohlers , Cong Liu , Chunyi Wu , Cheng-Bai Xu , Joon Seok Oh
发明人： Gregory P. Prokopowicz , Gerhard Pohlers , Cong Liu , Chunyi Wu , Cheng-Bai Xu , Joon Seok Oh
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/004 , G03F7/0045 , G03F7/20
摘要： New photoresist compositions are provided that comprise a component that comprises two or more amide groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and a multi-amide component that can function to decrease undesired photogenrated-acid diffusion out of unexposed regions of a photoresist coating layer
摘要翻译：提供新的光致抗蚀剂组合物，其包含包含两个或多个酰胺基团的组分。本发明优选的光致抗蚀剂可以包含具有光酸不稳定基团的树脂; 光致酸发生剂化合物; 以及可以起到减少光致抗蚀剂涂层的未曝光区域中不期望的光致酸扩散的作用的多酰胺组分

6. 发明授权

US08927190B2 Photoresist comprising nitrogen-containing compound 有权
标题翻译：包含含氮化合物的光致抗蚀剂
公开(公告)号：US08927190B2
公开(公告)日：2015-01-06
申请号：US13013780
申请日：2011-01-25
申请人： Cong Liu , Chunyi Wu , Gerhard Pohlers , Gregory P. Prokopowicz , Cheng-Bai Xu
发明人： Cong Liu , Chunyi Wu , Gerhard Pohlers , Gregory P. Prokopowicz , Cheng-Bai Xu
IPC分类号： G03F7/004 , G03F7/26 , C07C261/00
CPC分类号： C07C271/16 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/11 , G03F7/16 , G03F7/20 , G03F7/2041 , G03F7/32
摘要： New nitrogen-containing compounds are provided that comprise multiple hydroxyl moieties and photoresist compositions that comprise such nitrogen-containing compounds. Preferred nitrogen-containing compounds comprise 1) multiple hydroxyl substituents (i.e. 2 or more) and 2) one or more photoacid-labile groups.
摘要翻译：提供新的含氮化合物，其包含多个羟基部分和包含这种含氮化合物的光致抗蚀剂组合物。优选的含氮化合物包括1）多个羟基取代基（即2个或更多个）和2）一个或多个光致酸不稳定基团。

7. 发明授权

US09507260B2 Compositions and processes for photolithography 有权
标题翻译：光刻的组成和工艺
公开(公告)号：US09507260B2
公开(公告)日：2016-11-29
申请号：US12592160
申请日：2009-11-19
申请人： Deyan Wang , Chunyi Wu , Cheng-Bai Xu , George G. Barclay
发明人： Deyan Wang , Chunyi Wu , Cheng-Bai Xu , George G. Barclay
IPC分类号： G03F7/039 , G03F7/20 , G03F7/004 , G03F7/038 , G03F7/11 , G03F7/075
CPC分类号： G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/0757 , G03F7/11 , G03F7/2041
摘要： New photoresist compositions are provided that are useful for immersion lithography. In one preferred aspect, photoresist composition are provided that comprise: (i) one or more resins that comprise photoacid-labile groups, (ii) a photoactive component, and (iii) one or more materials that comprise photoacid labile groups and that are distinct from the one or more resins; wherein the deprotection activation energy of photoacid-labile groups of the one or more materials is about the same as or lower than the deprotection activation energy of photoacid-labile groups of the one or more resins. In another preferred aspect, photoresist compositions are provided that comprise (i) one or more resins, (ii) a photoactive component, and (iii) one or more materials that comprise a sufficient amount of acidic groups to provide a dark field dissolution rate of at least one angstrom per second.
摘要翻译：提供了可用于浸没式光刻的新的光致抗蚀剂组合物。在一个优选的方面，提供光致抗蚀剂组合物，其包含：（i）一种或多种包含光酸不稳定基团的树脂，（ii）光活性组分，和（iii）一种或多种包含光致酸不稳定基团并且是不同的从一种或多种树脂; 其中所述一种或多种材料的光致酸不稳定基团的去保护活化能大约等于或低于所述一种或多种树脂的光致酸不稳定基团的去保护活化能。在另一个优选的方面，提供光致抗蚀剂组合物，其包含（i）一种或多种树脂，（ii）光活性组分，和（iii）一种或多种包含足够量的酸性基团以提供暗场溶解速率的材料每秒至少一埃。

8. 发明申请

US20100304290A1 Compositions and processes for photolithography 有权
标题翻译：光刻的组成和工艺
公开(公告)号：US20100304290A1
公开(公告)日：2010-12-02
申请号：US12592160
申请日：2009-11-19
申请人： Deyan Wang , Chunyi Wu , Cheng-Bai Xu , George G. Barclay
发明人： Deyan Wang , Chunyi Wu , Cheng-Bai Xu , George G. Barclay
IPC分类号： G03F7/20 , G03B27/52 , G03F7/004
CPC分类号： G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/0757 , G03F7/11 , G03F7/2041
摘要： New photoresist compositions are provided that are useful for immersion lithography. In one preferred aspect, photoresist composition are provided that comprise: (i) one or more resins that comprise photoacid-labile groups, (ii) a photoactive component, and (iii) one or more materials that comprise photoacid labile groups and that are distinct from the one or more resins; wherein the deprotection activation energy of photoacid-labile groups of the one or more materials is about the same as or lower than the deprotection activation energy of photoacid-labile groups of the one or more resins. In another preferred aspect, photoresist compositions are provided that comprise (i) one or more resins, (ii) a photoactive component, and (iii) one or more materials that comprise a sufficient amount of acidic groups to provide a dark field dissolution rate of at least one angstrom per second.
摘要翻译：提供了可用于浸没式光刻的新的光致抗蚀剂组合物。在一个优选的方面，提供光致抗蚀剂组合物，其包含：（i）一种或多种包含光酸不稳定基团的树脂，（ii）光活性组分，和（iii）一种或多种包含光致酸不稳定基团并且是不同的从一种或多种树脂; 其中所述一种或多种材料的光致酸不稳定基团的去保护活化能大约等于或低于所述一种或多种树脂的光致酸不稳定基团的去保护活化能。在另一个优选的方面，提供光致抗蚀剂组合物，其包含（i）一种或多种树脂，（ii）光活性组分，和（iii）一种或多种包含足够量的酸性基团以提供暗场溶解速率的材料每秒至少一埃。

9. 发明申请

US20100297550A1 Compositions comprising sulfonamide material and processes for photolithography 审中-公开
标题翻译：包含磺酰胺材料的组合物和用于光刻的方法
公开(公告)号：US20100297550A1
公开(公告)日：2010-11-25
申请号：US12592159
申请日：2009-11-19
申请人： Deyan Wang , Chunyi Wu , George G. Barclay , Cheng-Bai Xu
发明人： Deyan Wang , Chunyi Wu , George G. Barclay , Cheng-Bai Xu
IPC分类号： G03F7/20 , G03B27/52 , G03F7/004
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/0048 , G03F7/0382 , G03F7/039 , G03F7/0392 , G03F7/0757
摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
摘要翻译：提供了可用于浸没式光刻的新的光致抗蚀剂组合物。本发明优选的光致抗蚀剂组合物包含一种或多种具有磺酰胺取代基的材料。本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸没流体中。

10. 发明申请

US20120301823A1 POLYMER COMPOSITION AND PHOTORESIST COMPRISING THE POLYMER 有权
标题翻译：聚合物组合物和包含聚合物的光催化剂
公开(公告)号：US20120301823A1
公开(公告)日：2012-11-29
申请号：US13482559
申请日：2012-05-29
申请人： Gregory P. Prokopowicz , Gerhard Pohlers , Mingqi Li , Chunyi Wu , Cong Liu , Cheng-bai Xu
发明人： Gregory P. Prokopowicz , Gerhard Pohlers , Mingqi Li , Chunyi Wu , Cong Liu , Cheng-bai Xu
IPC分类号： C08F224/00 , G03F7/004
CPC分类号： C08F214/186 , C08F214/18 , C08F220/28 , G03F7/0046 , G03F7/0397 , C08F2220/283 , C08F2220/185 , C08F220/32
摘要： A copolymer comprises the polymerized product of a base-soluble monomer of formula (I): wherein Ra is H, F, C1-10 alkyl, or C1-10 fluoroalkyl, L1 is an m valent C2-30 alkylene, C3-30 cycloalkylene, C6-30 arylene, C7-30 aralkylene group, X1 is independently a base-soluble organic group comprising β-diketone, β-ester-ketone, β-di-ester, or a combination comprising at least one of the foregoing; and an additional monomer copolymerizable with the base-soluble monomer of formula (I).
摘要翻译：共聚物包含式（I）的可溶于碱的单体的聚合产物：其中R a是H，F，C 1-10烷基或C 1-10氟烷基，L 1是m价的C 2-30亚烷基，C 3-30亚环烷基，C 6-30亚芳基，C 3-30亚烷基，X 1独立地为包含二 - 二酮，二酯 - 酮，二 - 二酯的基础可溶性有机基团，或包含至少一种前面的; 和可与式（I）的碱溶性单体共聚的另外的单体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式