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1. 发明申请

US20100248439A1 Method of fabricating non-volatile memory device having vertical structure 有权
标题翻译：制造具有垂直结构的非易失性存储器件的方法
公开(公告)号：US20100248439A1
公开(公告)日：2010-09-30
申请号：US12588534
申请日：2009-10-19
申请人： Dew-Ill Chung , Han-soo Kim , Jae-hun Jeong , Jin-soo Lim , Ki-hyun Kim , Ju-young Lim
发明人： Dew-Ill Chung , Han-soo Kim , Jae-hun Jeong , Jin-soo Lim , Ki-hyun Kim , Ju-young Lim
IPC分类号： H01L21/336
CPC分类号： H01L27/11578 , G11C16/0483 , H01L27/11582
摘要： A method of fabricating a non-volatile memory device according to an example embodiment may include etching a plurality of sacrificial films and insulation films to form a plurality of first openings that expose a plurality of first portions of a semiconductor substrate. A plurality of channel layers may be formed in the plurality of first openings so as to coat the plurality of first portions of the semiconductor substrate and side surfaces of the plurality of first openings. A plurality of insulation pillars may be formed on the plurality of channel layers so as to fill the plurality of first openings. The plurality of sacrificial films and insulation films may be further etched to form a plurality of second openings that expose a plurality of second portions of the semiconductor substrate. A plurality of side openings may be formed by removing the plurality of sacrificial films. A plurality of gate dielectric films may be formed on surfaces of the plurality of side openings. A plurality of gate electrodes may be formed on the plurality of gate dielectric films so as to fill the plurality of side openings.
摘要翻译：根据示例性实施例的制造非易失性存储器件的方法可以包括蚀刻多个牺牲膜和绝缘膜以形成暴露半导体衬底的多个第一部分的多个第一开口。可以在多个第一开口中形成多个沟道层，以便涂覆半导体衬底的多个第一部分和多个第一开口的侧表面。可以在多个通道层上形成多个绝缘柱，以填充多个第一开口。可以进一步蚀刻多个牺牲膜和绝缘膜以形成暴露半导体衬底的多个第二部分的多个第二开口。可以通过去除多个牺牲膜来形成多个侧开口。多个栅极电介质膜可以形成在多个侧面开口的表面上。可以在多个栅极电介质膜上形成多个栅电极，以填充多个侧开口。

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