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1. 发明申请

US20060216932A1 Plasma pre-treating surfaces for atomic layer deposition 有权
公开(公告)号：US20060216932A1
公开(公告)日：2006-09-28
申请号：US11359884
申请日：2006-02-21
申请人： Devendra Kumar , Kamal Goundar , Nathanael Kemeling , Hideaki Fukuda , Hessel Sprey , Maarten Stokhof
发明人： Devendra Kumar , Kamal Goundar , Nathanael Kemeling , Hideaki Fukuda , Hessel Sprey , Maarten Stokhof
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/02063 , C23C14/02 , C23C16/02 , C23C16/36 , C23C16/45525 , C23C16/45531 , H01L21/28562 , H01L21/3105 , H01L21/76807 , H01L21/7681 , H01L21/76826 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76873
摘要： Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Preferred embodiments are directed to providing conformal lining over openings formed in porous materials. Trenches are formed in, preferably, insulating layers. The layers are then adequately treated with a particular plasma process. Following this plasma treatment a self-limiting, self-saturating atomic layer deposition (ALD) reaction can occur without significantly filling the pores forming improved interconnects.

2. 发明授权

US07498242B2 Plasma pre-treating surfaces for atomic layer deposition 有权
标题翻译：用于原子层沉积的等离子体预处理表面
公开(公告)号：US07498242B2
公开(公告)日：2009-03-03
申请号：US11359884
申请日：2006-02-21
申请人： Devendra Kumar , Kamal Kishore Goundar , Nathanael R. C. Kemeling , Hideaki Fukuda , Hessel Sprey , Maarten Stokhof
发明人： Devendra Kumar , Kamal Kishore Goundar , Nathanael R. C. Kemeling , Hideaki Fukuda , Hessel Sprey , Maarten Stokhof
IPC分类号： H01L21/322
CPC分类号： H01L21/02063 , C23C14/02 , C23C16/02 , C23C16/36 , C23C16/45525 , C23C16/45531 , H01L21/28562 , H01L21/3105 , H01L21/76807 , H01L21/7681 , H01L21/76826 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76873
摘要： Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Preferred embodiments are directed to providing conformal lining over openings formed in porous materials. Trenches are formed in, preferably, insulating layers. The layers are then adequately treated with a particular plasma process. Following this plasma treatment a self-limiting, self-saturating atomic layer deposition (ALD) reaction can occur without significantly filling the pores forming improved interconnects.
摘要翻译：提供了集成电路中双镶嵌结构的保形衬里的方法和结构。优选实施例涉及在多孔材料中形成的开口上提供适形衬里。沟槽形成在，优选绝缘层中。然后用特定的等离子体工艺充分处理各层。在这种等离子体处理之后，可以发生自限制的自饱和原子层沉积（ALD）反应，而不显着填充形成改进的互连的孔。

3. 发明授权

US08652573B2 Method of CVD-depositing a film having a substantially uniform film thickness 有权
标题翻译： CVD沉积膜厚度基本均匀的膜的方法
公开(公告)号：US08652573B2
公开(公告)日：2014-02-18
申请号：US13183016
申请日：2011-07-14
申请人： Maarten Stokhof , Hessel Sprey , Tatsuya Yoshimi , Bert Jongbloed , Noureddine Adjeroud
发明人： Maarten Stokhof , Hessel Sprey , Tatsuya Yoshimi , Bert Jongbloed , Noureddine Adjeroud
IPC分类号： C23C16/00 , C23C16/08
CPC分类号： C23C16/34 , C23C16/45523
摘要： Method of depositing a film having a substantially uniform thickness by means of chemical vapor deposition, comprising: providing a reaction chamber; providing a substrate in said reaction chamber; subjecting the substrate to a series of deposition cycles, wherein each deposition cycle includes the steps of: (a) during a first time interval, supplying a first reactant to the reaction chamber; (b) during a second time interval, supplying a second reactant to the reaction chamber; and (c) during a third time interval, supplying neither the first nor the second reactant to the reaction chamber; wherein a start of the second time interval lies within the first time interval, such that a pre-exposure interval exists between a start of the first time interval and the start of the second time interval, during which pre-exposure interval the first reactant is supplied to the reaction chamber while the second reactant is not.
摘要翻译：通过化学气相沉积沉积具有基本均匀厚度的膜的方法，包括：提供反应室; 在所述反应室中提供衬底; 对衬底进行一系列沉积循环，其中每个沉积循环包括以下步骤：（a）在第一时间间隔期间，向反应室供应第一反应物; （b）在第二时间间隔期间，向所述反应室供应第二反应物; 和（c）在第三时间间隔期间，第一和第二反应物都不向反应室供应; 其中所述第二时间间隔的开始位于所述第一时间间隔内，使得在所述第一时间间隔的开始和所述第二时间间隔的开始之间存在预曝光间隔，在所述预曝光间隔期间，所述第一反应物为供应到反应室，而第二反应物不是。

4. 发明申请

US20120015105A1 METHOD OF CVD-DEPOSITING A FILM HAVING A SUBSTANTIALLY UNIFORM FILM THICKNESS 有权
标题翻译： CVD沉积具有大量均匀薄膜厚度的薄膜的方法
公开(公告)号：US20120015105A1
公开(公告)日：2012-01-19
申请号：US13183016
申请日：2011-07-14
申请人： Maarten Stokhof , Hessel Sprey , Yoshimi Tatsuya , Bert Jongbloed , Noureddine Adjeroud
发明人： Maarten Stokhof , Hessel Sprey , Yoshimi Tatsuya , Bert Jongbloed , Noureddine Adjeroud
IPC分类号： C23C16/52 , C23C16/455
CPC分类号： C23C16/34 , C23C16/45523
摘要： Method of depositing a film having a substantially uniform thickness by means of chemical vapor deposition, comprising: providing a reaction chamber; providing a substrate in said reaction chamber; subjecting the substrate to a series of deposition cycles, wherein each deposition cycle includes the steps of: (a) during a first time interval, supplying a first reactant to the reaction chamber; (b) during a second time interval, supplying a second reactant to the reaction chamber; and (c) during a third time interval, supplying neither the first nor the second reactant to the reaction chamber; wherein a start of the second time interval lies within the first time interval, such that a pre-exposure interval exists between a start of the first time interval and the start of the second time interval, during which pre-exposure interval the first reactant is supplied to the reaction chamber while the second reactant is not.
摘要翻译：通过化学气相沉积沉积具有基本均匀厚度的膜的方法，包括：提供反应室; 在所述反应室中提供衬底; 对衬底进行一系列沉积循环，其中每个沉积循环包括以下步骤：（a）在第一时间间隔期间，将第一反应物供应到反应室; （b）在第二时间间隔期间，向所述反应室供应第二反应物; 和（c）在第三时间间隔期间，第一和第二反应物都不向反应室供应; 其中所述第二时间间隔的开始位于所述第一时间间隔内，使得在所述第一时间间隔的开始和所述第二时间间隔的开始之间存在预曝光间隔，在所述预曝光间隔期间，所述第一反应物为供应到反应室，而第二反应物不是。

5. 发明申请

US20110256718A1 THIN FILMS 审中-公开
标题翻译：薄膜
公开(公告)号：US20110256718A1
公开(公告)日：2011-10-20
申请号：US13079562
申请日：2011-04-04
申请人： Suvi P. Haukka , Ivo Raaijmakers , Wei Min Li , Juhana Kostamo , Hessel Sprey , Christiaan J. Werkhoven
发明人： Suvi P. Haukka , Ivo Raaijmakers , Wei Min Li , Juhana Kostamo , Hessel Sprey , Christiaan J. Werkhoven
IPC分类号： H01L21/285
CPC分类号： C23C16/029 , C23C16/34 , C23C16/401 , C23C16/403 , C23C16/405 , C23C16/452 , C23C16/45529 , C23C16/45531 , C23C16/45534 , C30B25/14 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28562 , H01L21/3141 , H01L21/3145 , H01L21/31612 , H01L21/3162 , H01L21/31641 , H01L21/3185 , H01L21/76846 , H01L21/76873 , H01L21/76879 , H01L29/513 , H01L29/517 , H01L29/518 , H01L2221/1089
摘要： Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g., in separate pulses, and the copper source pulses can gradually increase in frequency, forming a transition region, until pure copper is formed at the upper surface. Advantageously, graded compositions in these and a variety of other contexts help to avoid such problems as etch rate control, electromigration and non-ohmic electrical contact that can occur at sharp material interfaces. In some embodiments additional seed layers or additional transition layers are provided.
摘要翻译：通过原子层沉积形成薄膜，由此膜的组成可以在包括自限制化学的交替脉冲的循环期间从单层变为单层。在所示实施例中，在循环过程中引入了不同量的杂质源。因此，即使对于非常薄的层也提供了梯度栅极电介质。薄的2nm的栅极电介质可以从纯氧化硅到氧氮化物变化为氮化硅。类似地，栅极电介质可以从氧化铝变化为氧化铝和较高电介质材料（例如，ZrO 2）到纯高k材料并返回到氧化铝的混合物。在另一个实施例中，金属氮化物（例如，WN）首先形成为用于衬里双镶嵌沟槽和通孔的屏障。在交替沉积工艺期间，铜可以被引入，例如分开的脉冲，并且铜源脉冲可以逐渐增加频率，形成过渡区域，直到在上表面形成纯铜。有利的是，这些和各种其他情况下的分级组合物有助于避免诸如在尖锐材料界面处可能发生的蚀刻速率控制，电迁移和非欧姆电接触等问题。在一些实施例中，提供了额外的种子层或附加的过渡层。

6. 发明申请

US20050181555A1 Thin films 有权
标题翻译：薄膜
公开(公告)号：US20050181555A1
公开(公告)日：2005-08-18
申请号：US11106220
申请日：2005-04-13
申请人： Suvi Haukka , Ivo Raaijmakers , Wei Li , Juhana Kostamo , Hessel Sprey , Christiaan Werkhoven
发明人： Suvi Haukka , Ivo Raaijmakers , Wei Li , Juhana Kostamo , Hessel Sprey , Christiaan Werkhoven
IPC分类号： C23C16/02 , C23C16/34 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/48 , C30B25/14 , H01L21/28 , H01L21/285 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/768 , H01L29/51 , H01L21/8238
CPC分类号： C23C16/029 , C23C16/34 , C23C16/401 , C23C16/403 , C23C16/405 , C23C16/452 , C23C16/45529 , C23C16/45531 , C23C16/45534 , C30B25/14 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28562 , H01L21/3141 , H01L21/3145 , H01L21/31612 , H01L21/3162 , H01L21/31641 , H01L21/3185 , H01L21/76846 , H01L21/76873 , H01L21/76879 , H01L29/513 , H01L29/517 , H01L29/518 , H01L2221/1089
摘要： Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g., in separate pulses, and the copper source pulses can gradually increase in frequency, forming a transition region, until pure copper is formed at the upper surface. Advantageously, graded compositions in these and a variety of other contexts help to avoid such problems as etch rate control, electromigration and non-ohmic electrical contact that can occur at sharp material interfaces. In some embodiments additional seed layers or additional transition layers are provided.
摘要翻译：通过原子层沉积形成薄膜，由此膜的组成可以在包括自限制化学的交替脉冲的循环期间从单层变为单层。在所示实施例中，在循环过程中引入了不同量的杂质源。因此，即使对于非常薄的层也提供了梯度栅极电介质。薄的2nm的栅极电介质可以从纯氧化硅到氧氮化物变化为氮化硅。类似地，栅极电介质可以从氧化铝到氧化铝和较高介电材料（例如ZrO 2）的混合物变化为纯高k材料并返回到氧化铝。在另一个实施例中，金属氮化物（例如，WN）首先形成为用于衬里双镶嵌沟槽和通孔的屏障。在交替沉积工艺期间，铜可以被引入，例如分开的脉冲，并且铜源脉冲可以逐渐增加频率，形成过渡区域，直到在上表面形成纯铜。有利的是，这些和各种其他情况下的分级组合物有助于避免诸如在尖锐材料界面处可能发生的蚀刻速率控制，电迁移和非欧姆电接触等问题。在一些实施例中，提供了额外的种子层或附加的过渡层。

7. 发明授权

US07981791B2 Thin films 有权
标题翻译：薄膜
公开(公告)号：US07981791B2
公开(公告)日：2011-07-19
申请号：US12202132
申请日：2008-08-29
申请人： Suvi P. Haukka , Ivo Raaijmakers , Wei Min Li , Juhana Kostamo , Hessel Sprey , Christiaan J. Werkhoven
发明人： Suvi P. Haukka , Ivo Raaijmakers , Wei Min Li , Juhana Kostamo , Hessel Sprey , Christiaan J. Werkhoven
IPC分类号： H01L21/4763
CPC分类号： C23C16/029 , C23C16/34 , C23C16/401 , C23C16/403 , C23C16/405 , C23C16/452 , C23C16/45529 , C23C16/45531 , C23C16/45534 , C30B25/14 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28562 , H01L21/3141 , H01L21/3145 , H01L21/31612 , H01L21/3162 , H01L21/31641 , H01L21/3185 , H01L21/76846 , H01L21/76873 , H01L21/76879 , H01L29/513 , H01L29/517 , H01L29/518 , H01L2221/1089
摘要： Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g., in separate pulses, and the copper source pulses can gradually increase in frequency, forming a transition region, until pure copper is formed at the upper surface. Advantageously, graded compositions in these and a variety of other contexts help to avoid such problems as etch rate control, electromigration and non-ohmic electrical contact that can occur at sharp material interfaces. In some embodiments additional seed layers or additional transition layers are provided.
摘要翻译：通过原子层沉积形成薄膜，由此膜的组成可以在包括自限制化学的交替脉冲的循环期间从单层变为单层。在所示实施例中，在循环过程中引入了不同量的杂质源。因此，即使对于非常薄的层也提供了梯度栅极电介质。薄的2nm的栅极电介质可以从纯氧化硅到氧氮化物变化为氮化硅。类似地，栅极电介质可以从氧化铝变化为氧化铝和较高电介质材料（例如，ZrO 2）到纯高k材料并返回到氧化铝的混合物。在另一个实施例中，金属氮化物（例如，WN）首先形成为用于衬里双镶嵌沟槽和通孔的屏障。在交替沉积工艺期间，铜可以被引入，例如分开的脉冲，并且铜源脉冲可以逐渐增加频率，形成过渡区域，直到在上表面形成纯铜。有利的是，这些和各种其他情况下的分级组合物有助于避免诸如在尖锐材料界面处可能发生的蚀刻速率控制，电迁移和非欧姆电接触等问题。在一些实施例中，提供了额外的种子层或附加的过渡层。

8. 发明申请

US20090269939A1 CYCLICAL OXIDATION PROCESS 审中-公开
标题翻译：循环氧化过程
公开(公告)号：US20090269939A1
公开(公告)日：2009-10-29
申请号：US12395443
申请日：2009-02-27
申请人： Hessel Sprey
发明人： Hessel Sprey
IPC分类号： H01L21/316 , H01L21/31
CPC分类号： H01L21/31662 , C23C8/02 , C23C8/10 , C23C8/16 , H01L21/0223 , H01L21/02238 , H01L21/02255 , H01L21/28247 , H01L29/40114
摘要： Methods for selective oxidation using pulses of an oxidizing agent are described. An oxidation process is provided in which a pulse of an oxidizing agent is followed by a flow of a purging agent. The pulse of the oxidizing agent and the flow of the purging agent forms a cycle that can be repeated to allow for desired oxidation on parts of a structure, e.g., a transistor structure, while preventing or limiting undesired oxidation on other parts of the structure. In addition, during the oxidation, a nitrogen source such as N2, NH3, N2H4 or combinations thereof, can be provided to enhance the selectivity of the oxidation process. The nitrogen source can act as an oxygen scavenger to enhance oxidation selectively, or undesired oxidation can also be further prevented or limited by introducing other oxygen scavengers, such as hydrazine.
摘要翻译：描述了使用氧化剂脉冲进行选择氧化的方法。提供氧化工艺，其中氧化剂的脉冲之后是清洗剂的流动。氧化剂的脉冲和清洗剂的流动形成可以重复的循环，以允许在结构的部分例如晶体管结构上进行期望的氧化，同时防止或限制结构的其它部分上的不期望的氧化。此外，在氧化过程中，可以提供氮源，例如N 2，NH 3，N 2 H 4或其组合，以增强氧化过程的选择性。氮源可用作氧清除剂以选择性地增强氧化物，或者还可以通过引入其它除氧剂如肼来进一步防止或限制不期望的氧化。

9. 发明申请

US20090068832A1 THIN FILMS 有权
标题翻译：薄膜
公开(公告)号：US20090068832A1
公开(公告)日：2009-03-12
申请号：US12202132
申请日：2008-08-29
申请人： Suvi P. Haukka , Ivo Raaijmakers , Wei Min Li , Juhana Kostamo , Hessel Sprey , Christrian J. Werkhoven
发明人： Suvi P. Haukka , Ivo Raaijmakers , Wei Min Li , Juhana Kostamo , Hessel Sprey , Christrian J. Werkhoven
IPC分类号： H01L21/4763
CPC分类号： C23C16/029 , C23C16/34 , C23C16/401 , C23C16/403 , C23C16/405 , C23C16/452 , C23C16/45529 , C23C16/45531 , C23C16/45534 , C30B25/14 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28562 , H01L21/3141 , H01L21/3145 , H01L21/31612 , H01L21/3162 , H01L21/31641 , H01L21/3185 , H01L21/76846 , H01L21/76873 , H01L21/76879 , H01L29/513 , H01L29/517 , H01L29/518 , H01L2221/1089
摘要： Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g., in separate pulses, and the copper source pulses can gradually increase in frequency, forming a transition region, until pure copper is formed at the upper surface. Advantageously, graded compositions in these and a variety of other contexts help to avoid such problems as etch rate control, electromigration and non-ohmic electrical contact that can occur at sharp material interfaces. In some embodiments additional seed layers or additional transition layers are provided.
摘要翻译：通过原子层沉积形成薄膜，由此膜的组成可以在包括自限制化学的交替脉冲的循环期间从单层变为单层。在所示实施例中，在循环过程中引入了不同量的杂质源。因此，即使对于非常薄的层也提供了梯度栅极电介质。薄的2nm的栅极电介质可以从纯氧化硅到氧氮化物变化为氮化硅。类似地，栅极电介质可以从氧化铝变化为氧化铝和较高电介质材料（例如，ZrO 2）到纯高k材料并返回到氧化铝的混合物。在另一个实施例中，金属氮化物（例如，WN）首先形成为用于衬里双镶嵌沟槽和通孔的屏障。在交替沉积工艺期间，铜可以被引入，例如分开的脉冲，并且铜源脉冲可以逐渐增加频率，形成过渡区域，直到在上表面形成纯铜。有利的是，这些和各种其他情况下的分级组合物有助于避免诸如在尖锐材料界面处可能发生的蚀刻速率控制，电迁移和非欧姆电接触等问题。在一些实施例中，提供了额外的种子层或附加的过渡层。

10. 发明授权

US06884317B2 Method and installation for etching a substrate 有权
标题翻译：蚀刻基板的方法和安装
公开(公告)号：US06884317B2
公开(公告)日：2005-04-26
申请号：US09771673
申请日：2001-01-29
申请人： Hessel Sprey , Arjen Benjamin Storm , Jan Willem Hubert Maes
发明人： Hessel Sprey , Arjen Benjamin Storm , Jan Willem Hubert Maes
IPC分类号： H01L21/302 , H01L21/00 , H01L21/311 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/67069 , H01L21/31116
摘要： Method for etching a substrate wherein, after placing in an etching chamber, said substrate is treated with a mixture of HF and acetic acid. Acetic acid is introduced into the chamber first, followed by the hydrogen fluoride. Hydrogen fluoride is introduced via an intermediate stage during which the hydrogen fluoride is stored in an auxiliary chamber. By this means back-flow of a corrosive mixture consisting of hydrogen fluoride and acetic acid into the piping assembly for hydrogen fluoride is prevented and, thus, the life of the piping assembly concerned is appreciably prolonged and metal contamination on substrate treated later is prevented.
摘要翻译：蚀刻基板的方法，其中在放置在蚀刻室中后，用HF和乙酸的混合物处理所述基板。首先将乙酸引入室内，然后加入氟化氢。通过氟化氢储存在辅助室中的中间阶段引入氟化氢。通过这种方式，防止由氟化氢和乙酸组成的腐蚀性混合物回流到氟化氢的管道组件中，因此有关管道组件的使用寿命明显延长，并且防止后处理的基板上的金属污染。

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