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1. 发明授权

US08581347B2 Forming bipolar transistor through fast EPI-growth on polysilicon 有权
标题翻译：通过在多晶硅上快速EPI生长形成双极晶体管
公开(公告)号：US08581347B2
公开(公告)日：2013-11-12
申请号：US12841275
申请日：2010-07-22
申请人： Der-Chyang Yeh , Li-Weng Chang , Hua-Chou Tseng , Chih-Ping Chao
发明人： Der-Chyang Yeh , Li-Weng Chang , Hua-Chou Tseng , Chih-Ping Chao
IPC分类号： H01L29/66
CPC分类号： H01L21/8249 , H01L21/8228 , H01L27/0623 , H01L27/0826
摘要： Provided is a semiconductor device that includes a first transistor and a second transistor that are formed on the same substrate. The first transistor includes a first collector, a first base, and a first emitter. The first collector includes a first doped well disposed in the substrate. The first base includes a first doped layer disposed above the substrate and over the first doped well. The first emitter includes a doped element disposed over a portion of the first doped layer. The second transistor includes a second collector, a second base, and a second emitter. The second collector includes a doped portion of the substrate. The second base includes a second doped well disposed in the substrate and over the doped portion of the substrate. The second emitter includes a second doped layer disposed above the substrate and over the second doped well.
摘要翻译：提供了一种半导体器件，其包括形成在同一衬底上的第一晶体管和第二晶体管。第一晶体管包括第一集电极，第一基极和第一发射极。第一集电器包括设置在衬底中的第一掺杂阱。第一基底包括设置在衬底上方和第一掺杂阱上方的第一掺杂层。第一发射器包括设置在第一掺杂层的一部分上的掺杂元件。第二晶体管包括第二集电极，第二基极和第二发射极。第二集电体包括衬底的掺杂部分。第二基底包括设置在衬底中并在衬底的掺杂部分上方的第二掺杂阱。第二发射器包括设置在衬底上方和第二掺杂阱上方的第二掺杂层。

2. 发明申请

US20120018811A1 FORMING BIPOLAR TRANSISTOR THROUGH FAST EPI-GROWTH ON POLYSILICON 有权
标题翻译：形成双极晶体管通过快速增长在多晶硅上
公开(公告)号：US20120018811A1
公开(公告)日：2012-01-26
申请号：US12841275
申请日：2010-07-22
申请人： Der-Chyang Yeh , Li-Weng Chang , Hua-Chou Tseng , Chih-Ping Chao
发明人： Der-Chyang Yeh , Li-Weng Chang , Hua-Chou Tseng , Chih-Ping Chao
IPC分类号： H01L27/06 , H01L21/8249
CPC分类号： H01L21/8249 , H01L21/8228 , H01L27/0623 , H01L27/0826
摘要： Provided is a semiconductor device that includes a first transistor and a second transistor that are formed on the same substrate. The first transistor includes a first collector, a first base, and a first emitter. The first collector includes a first doped well disposed in the substrate. The first base includes a first doped layer disposed above the substrate and over the first doped well. The first emitter includes a doped element disposed over a portion of the first doped layer. The second transistor includes a second collector, a second base, and a second emitter. The second collector includes a doped portion of the substrate. The second base includes a second doped well disposed in the substrate and over the doped portion of the substrate. The second emitter includes a second doped layer disposed above the substrate and over the second doped well.
摘要翻译：提供了一种半导体器件，其包括形成在同一衬底上的第一晶体管和第二晶体管。第一晶体管包括第一集电极，第一基极和第一发射极。第一集电器包括设置在衬底中的第一掺杂阱。第一基底包括设置在衬底上方和第一掺杂阱上方的第一掺杂层。第一发射器包括设置在第一掺杂层的一部分上的掺杂元件。第二晶体管包括第二集电极，第二基极和第二发射极。第二集电体包括衬底的掺杂部分。第二基底包括设置在衬底中并在衬底的掺杂部分上方的第二掺杂阱。第二发射器包括设置在衬底上方和第二掺杂阱上方的第二掺杂层。

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