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    • 2. 发明申请
    • FABRICATION OF THREE-DIMENSIONAL PHOTONIC CRYSTALS IN GALLIUM ARSENIDE-BASED MATERIAL
    • 三氧化二铝基材料制备三维光子晶体
    • US20060286693A1
    • 2006-12-21
    • US11424362
    • 2006-06-15
    • Janusz MurakowskiChristopher SchuetzDennis Prather
    • Janusz MurakowskiChristopher SchuetzDennis Prather
    • H01L21/00
    • H01L21/00B82Y20/00G02B6/1225G02B6/136
    • The present invention is an efficient method for the fabrication of three-dimensional structures in GaAs-based materials. The method is particularly suitable for the realization of 3D photonic crystals. The method relies on the observation that the oxidation rate of Ga1-xA1xAs in water-vapor atmosphere is a strong function of the aluminum content in the alloy. Thus, a stack of Ga1-xA1xAs layers with varying concentration of A1 is grown on GaAs substrate. The top surface is patterned with an array of holes, which are then transferred to the underlying layers by dry etching. Subjecting the so-prepared structure to oxidation in water vapor atmosphere at an elevated temperature results in lateral oxidation of the material exposed by the etched holes. The lateral oxidation depth depends on aluminum content in a particular layer. The oxide is then removed by an aqueous solution of hydrofluoric acid and a three-dimensional array of voids ensues. The shape of the voids depends on the variation of aluminum content in the layers of the stack. Depending on the 2D pattern on top surface of the structure, various arrays of voids can be realized.
    • 本发明是用于制造基于GaAs的材料中的三维结构的有效方法。 该方法特别适用于实现3D光子晶体。 该方法依赖于观察到,在水蒸汽气氛中,Ga 1-x A 1 x As As的氧化速率是合金中铝含量的强函数。 因此,在GaAs衬底上生长具有变化的A 1浓度的Ga 1-x A 1 As x As层的堆叠。 顶表面被图案化成孔,其然后通过干蚀刻转移到下面的层。 使如此制备的结构在高温下在水蒸汽气氛中氧化导致被蚀刻孔暴露的材料的侧向氧化。 横向氧化深度取决于特定层中的铝含量。 然后通过氢氟酸的水溶液除去氧化物,并且随后发生三维空隙排列。 空隙的形状取决于堆叠层中铝含量的变化。 根据结构顶表面上的2D图案,可以实现各种空隙阵列。
    • 7. 发明申请
    • HYBRID DIELECTRIC-METALLIC BACK REFLECTOR FOR PHOTOVOLTAIC APPLICATIONS
    • 用于光伏应用的混合电介质金属反射器
    • US20140007935A1
    • 2014-01-09
    • US13885903
    • 2011-11-18
    • James MutituShouyuan ShiDennis PratherAllen Barnett
    • James MutituShouyuan ShiDennis PratherAllen Barnett
    • H01L31/0232
    • H01L31/02327H01L31/02165H01L31/02168H01L31/02366H01L31/056Y02E10/52
    • A photovoltaic device includes a photovoltaic layer configured to convert light into electrical power, a distributed Bragg reflector (DBR) layer having one to three periods disposed adjacent the photovoltaic layer, a metal layer, disposed adjacent the DBR layer, configured to reflect light passed through the photovoltaic layer to the DBR layer, and a phase matching layer disposed between the metal layer and the DBR layer, the phase matching layer configured to match a phase between the DBR layer and the metal layer over a selected wavelength band. The metal layer has a non-uniformed textured surface facing the phase matching layer. The photovoltaic device further includes an anti-reflection coating layer disposed on a top surface of the photovoltaic layer, and a substrate on which the metal layer is disposed. The substrate may be textured on a surface facing the metal layer.
    • 一种光伏器件包括被配置为将光转换成电力的光伏层,布置在布拉格反射体(DBR)层中的布置于布置于布置的布拉格反射层(DBR)层,其中一个至三个周期设置在光伏层附近,邻近该DBR层布置的金属层, 所述光电层到所述DBR层,以及配置在所述金属层和所述DBR层之间的相位匹配层,所述相位匹配层被配置为使所述DBR层和所述金属层之间的相位在选定的波长带上相匹配。 金属层具有面向相位匹配层的非均匀织构表面。 光电器件还包括设置在光伏层的顶表面上的防反射涂层和设置金属层的基板。 衬底可以在面向金属层的表面上纹理化。