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    • 1. 发明申请
    • FETs with Hybrid Channel Materials
    • 混合通道材料的FET
    • US20130153964A1
    • 2013-06-20
    • US13326825
    • 2011-12-15
    • Dechao GuoShu-Jen HanEdward William KiewraKuen-Ting Shiu
    • Dechao GuoShu-Jen HanEdward William KiewraKuen-Ting Shiu
    • H01L27/092H01L21/8238
    • H01L21/8258H01L21/823807H01L27/0605
    • Techniques for employing different channel materials within the same CMOS circuit are provided. In one aspect, a method of fabricating a CMOS circuit includes the following steps. A wafer is provided having a first semiconductor layer on an insulator. STI is used to divide the first semiconductor layer into a first active region and a second active region. The first semiconductor layer is recessed in the first active region. A second semiconductor layer is epitaxially grown on the first semiconductor layer, wherein the second semiconductor layer comprises a material having at least one group III element and at least one group V element. An n-FET is formed in the first active region using the second semiconductor layer as a channel material for the n-FET. A p-FET is formed in the second active region using the first semiconductor layer as a channel material for the p-FET.
    • 提供在同一CMOS电路内采用不同通道材料的技术。 一方面,制造CMOS电路的方法包括以下步骤。 提供了在绝缘体上具有第一半导体层的晶片。 STI用于将第一半导体层分成第一有源区和第二有源区。 第一半导体层凹入第一有源区。 第二半导体层在第一半导体层上外延生长,其中第二半导体层包括具有至少一个III族元素和至少一个V族元素的材料。 使用第二半导体层作为n-FET的沟道材料,在第一有源区中形成n-FET。 使用第一半导体层作为p-FET的沟道材料,在第二有源区中形成p-FET。
    • 2. 发明授权
    • FETs with hybrid channel materials
    • 具有混合通道材料的FET
    • US08610172B2
    • 2013-12-17
    • US13326825
    • 2011-12-15
    • Dechao GuoShu-Jen HanEdward William KiewraKuen-Ting Shiu
    • Dechao GuoShu-Jen HanEdward William KiewraKuen-Ting Shiu
    • H01L29/66
    • H01L21/8258H01L21/823807H01L27/0605
    • Techniques for employing different channel materials within the same CMOS circuit are provided. In one aspect, a method of fabricating a CMOS circuit includes the following steps. A wafer is provided having a first semiconductor layer on an insulator. STI is used to divide the first semiconductor layer into a first active region and a second active region. The first semiconductor layer is recessed in the first active region. A second semiconductor layer is epitaxially grown on the first semiconductor layer, wherein the second semiconductor layer comprises a material having at least one group III element and at least one group V element. An n-FET is formed in the first active region using the second semiconductor layer as a channel material for the n-FET. A p-FET is formed in the second active region using the first semiconductor layer as a channel material for the p-FET.
    • 提供在同一CMOS电路内采用不同通道材料的技术。 一方面,制造CMOS电路的方法包括以下步骤。 提供了在绝缘体上具有第一半导体层的晶片。 STI用于将第一半导体层分成第一有源区和第二有源区。 第一半导体层凹入第一有源区。 第二半导体层在第一半导体层上外延生长,其中第二半导体层包括具有至少一个III族元素和至少一个V族元素的材料。 使用第二半导体层作为n-FET的沟道材料,在第一有源区中形成n-FET。 使用第一半导体层作为p-FET的沟道材料,在第二有源区中形成p-FET。