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    • 5. 发明申请
    • 100% synthetic nonwoven wipes
    • 100%合成无纺布
    • US20050133174A1
    • 2005-06-23
    • US10965403
    • 2004-10-14
    • Ronald GorleyDavid PungAlan Sherry
    • Ronald GorleyDavid PungAlan Sherry
    • A47L13/20A47L13/22A47L13/256A47L13/51B05B9/08B08B1/00C11D1/66C11D1/72C11D1/825C11D3/32C11D3/37C11D3/43C11D17/04D21H11/00
    • B08B1/00A45D37/00A45D2200/1018A45D2200/1036A47L13/16C11D17/049D04H1/492D04H1/54
    • The present invention relates to wipes comprising at least one layer of a 100% synthetic nonwoven web. The wipes may be provided as a single layer of nonwoven web, or may be provided in a laminate material, such as one comprising spunlaid-meltblown-spunlaid (SMS) webs. The 100% synthetic nonwoven webs of the present invention may be made via a process comprising a fiber laying step selected from the group consisting of spunlaying, meltblowing, carding, airlaying, wetlaying and combinations thereof. The 100% synthetic nonwoven webs of the present invention may be made via a process comprising a fiber bonding step selected from the group consisting of hydroentanglement, cold calendering, hot calendering, air thru bonding, chemical bonding, needle punching and combinations thereof. The nonwoven webs may also comprise one or more polyolefins. In one embodiment of the present invention, the nonwoven webs may be spunlaid and HET.
    • 本发明涉及包含至少一层100%合成非织造纤维网的擦拭物。 擦拭巾可以作为单层非织造纤维网提供,或者可以设置在层压材料中,例如包括纺丝 - 熔喷 - 纺丝(SMS)纤维网的层压材料。 本发明的100%合成非织造纤维网可以通过包括选自以下的纤维铺展步骤的方法制备:纺丝法,熔喷法,梳理法,气流法,湿法法及其组合。 本发明的100%合成非织造纤维网可以通过包括从水刺,冷砑光,热压延,空气穿过粘合,化学粘合,针刺及其组合组成的组中的纤维粘合步骤的方法制备。 非织造纤维网也可以包含一种或多种聚烯烃。 在本发明的一个实施方案中,非织造纤维网可以是纺粘和HET。
    • 6. 发明授权
    • Nitrogen treatment of a metal nitride/metal stack
    • 金属氮化物/金属堆叠的氮处理
    • US06436819B1
    • 2002-08-20
    • US09495817
    • 2000-02-01
    • Zhi-Fan ZhangDavid PungNitin KhuranaHong ZhangRoderick Craig Mosely
    • Zhi-Fan ZhangDavid PungNitin KhuranaHong ZhangRoderick Craig Mosely
    • H01L2144
    • H01L21/76846H01L21/76856H01L21/76862
    • A method for processing a substrate comprising the formation of a metal nitride/metal stack suitable for use as a barrier/liner for sub-0.18 &mgr;m device fabrication. After a metal nitride layer is deposited upon a metal layer, the metal nitride layer is exposed to a treatment step in a nitrogen-containing environment, e.g., a plasma. The plasma treatment modifies the entire metal nitride layer and a top portion of the underlying metal layer. The plasma adds nitrogen to the top portion of the metal layer, resulting in the formation of a nitrated-metal layer. Aside from reducing the microstructure mismatch across the nitride-metal interface, the plasma treatment also densifies and reduces impurities from the deposited nitride layer. The resulting nitride/metal stack exhibits improved film properties, including enhanced adhesion and barrier characteristics. A composite nitride layer of a desired thickness can also be formed by repeating the deposition and treatment cycles of thinner component nitride layers.
    • 一种用于处理衬底的方法,包括形成适合用作亚0.18μm器件制造的屏障/衬垫的金属氮化物/金属叠层。 在将金属氮化物层沉积在金属层上之后,将金属氮化物层暴露于含氮环境(例如等离子体)中的处理步骤。 等离子体处理改变整个金属氮化物层和下面的金属层的顶部。 等离子体向金属层的顶部添加氮,导致形成硝化金属层。 除了减少跨越氮化物 - 金属界面的微结构失配之外,等离子体处理也使沉积的氮化物层致密化和减少杂质。 所得到的氮化物/金属堆叠表现出改进的膜性质,包括增强的粘附性和阻隔特性。 也可以通过重复较薄的氮化物层的沉积和处理循环来形成所需厚度的复合氮化物层。