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1. 发明授权

US06387787B1 Lithographic template and method of formation and use 有权
公开(公告)号：US06387787B1
公开(公告)日：2002-05-14
申请号：US09797558
申请日：2001-03-02
申请人： David P. Mancini , Doug J. Resnick , William J. Dauksher
发明人： David P. Mancini , Doug J. Resnick , William J. Dauksher
IPC分类号： H01L213205
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10S438/942 , Y10S438/945 , Y10T428/31507
摘要： This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (10) is formed having a substrate (12), an optional etch stop layer (16) formed on a surface (14) of the substrate (12), and a patterning layer (20) formed on a surface (18) of the etch stop layer (16). The template (10) is used in the fabrication of a semiconductor device (30) for affecting a pattern in device (30) by positioning the template (10) in close proximity to semiconductor device (30) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template (10) is then removed to complete fabrication of semiconductor device (30).

2. 发明授权

US06580172B2 Lithographic template and method of formation and use 有权
标题翻译：光刻模板及其形成和使用方法
公开(公告)号：US06580172B2
公开(公告)日：2003-06-17
申请号：US10103608
申请日：2002-03-21
申请人： David P. Mancini , Doug J. Resnick , William J. Dauksher
发明人： David P. Mancini , Doug J. Resnick , William J. Dauksher
IPC分类号： H01L2348
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10S438/942 , Y10S438/945 , Y10T428/31507
摘要： The lithographic template is formed having a substrate, an optional etch stop layer formed on a surface of the substrate, and a patterning layer formed on a surface of the etch stop layer. The template is used in the fabrication of a semiconductor device for affecting a pattern in the device by positioning the template in close proximity to the semiconductor device having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template is then removed to complete fabrication of the semiconductor device.
摘要翻译：形成光刻模板，其具有衬底，形成在衬底的表面上的任选的蚀刻停止层以及形成在蚀刻停止层的表面上的图案化层。模板用于制造用于影响器件中图案的半导体器件，方法是将模板定位在其上形成有辐射敏感材料的半导体器件附近，并施加压力以使辐射敏感材料流入浮雕图像存在于模板上。然后通过模板施加辐射，以进一步固化辐射敏感材料的部分，并进一步限定辐射敏感材料中的图案。然后移除模板以完成半导体器件的制造。

3. 发明申请

US20090008748A1 ULTRA-THIN DIE AND METHOD OF FABRICATING SAME 有权
标题翻译：超薄薄膜及其制造方法
公开(公告)号：US20090008748A1
公开(公告)日：2009-01-08
申请号：US12211556
申请日：2008-09-16
申请人： David P. Mancini , Young Sir Chung , William J. Dauksher , Donald F. Watson , Steven R. Young , Robert W. Baird
发明人： David P. Mancini , Young Sir Chung , William J. Dauksher , Donald F. Watson , Steven R. Young , Robert W. Baird
IPC分类号： H01L29/06
CPC分类号： H01L21/3065 , H01L21/78 , Y10S438/977
摘要： In accordance with a specific embodiment, a method of processing a semiconductor substrate is disclosed whereby the substrate is thinned, and the dice formed on the substrate are singulated by a common process. Trench regions are formed on a backside of the substrate. An isotropic etch of the backside results in a thinning of the substrate while maintaining the depth of the trenches, thereby facilitating singulation of the die.
摘要翻译：根据具体实施例，公开了一种处理半导体衬底的方法，由此使衬底变薄，并且通过公共工艺将形成在衬底上的裸片分割。沟槽区域形成在衬底的背面。背面的各向同性蚀刻导致衬底的薄化，同时保持沟槽的深度，从而有利于模具的分离。

4. 发明授权

US07063919B2 Lithographic template having a repaired gap defect method of repair and use 失效
标题翻译：具有修复间隙缺陷修复和使用方法的平版印刷模板
公开(公告)号：US07063919B2
公开(公告)日：2006-06-20
申请号：US10209167
申请日：2002-07-31
申请人： David P. Mancini , William J. Dauksher , Kevin J. Nordquist , Douglas J. Resnick
发明人： David P. Mancini , William J. Dauksher , Kevin J. Nordquist , Douglas J. Resnick
IPC分类号： G03H1/04
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/60 , G03F7/0002
摘要： This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to an improved lithographic template including a repaired defect, a method of fabricating the improved lithographic template, a method for repairing defects present in the template, and a method for making semiconductor devices with the improved lithographic template. The lithographic template (10) is formed having a relief structure (26) and a repaired gap defect (36) within the relief structure (26). The template (10) is used in the fabrication of a semiconductor device (40) for affecting a pattern in device (40) by positioning the template (10) in close proximity to semiconductor device (40) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief structure present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template (10) is then removed to complete fabrication of semiconductor device (40).
摘要翻译：本发明涉及半导体器件，微电子器件，微机电器件，微流体器件，更具体地涉及包括修复缺陷的改进的光刻模板，制造改进的光刻模板的方法，修复模板中存在的缺陷的方法，以及用于制造具有改进的光刻模板的半导体器件的方法。光刻模板（10）形成在浮雕结构（26）内具有浮雕结构（26）和修复的间隙缺陷（36）。模板（10）用于制造半导体器件（40），用于通过将模板（10）靠近其上形成有辐射敏感材料的半导体器件（40）定位来影响器件（40）中的图案，以及施加压力以使辐射敏感材料流入存在于模板上的浮雕结构中。然后通过模板施加辐射，以进一步固化辐射敏感材料的部分，并进一步限定辐射敏感材料中的图案。然后移除模板（10）以完成半导体器件（40）的制造。

5. 发明授权

US08198705B2 Ultra-thin die and method of fabricating same 有权
标题翻译：超薄模及其制造方法
公开(公告)号：US08198705B2
公开(公告)日：2012-06-12
申请号：US12211556
申请日：2008-09-16
申请人： David P. Mancini , Young Sir Chung , William J. Dauksher , Donald F. Weston , Steven R. Young , Robert W. Baird
发明人： David P. Mancini , Young Sir Chung , William J. Dauksher , Donald F. Weston , Steven R. Young , Robert W. Baird
IPC分类号： H01L29/06
CPC分类号： H01L21/3065 , H01L21/78 , Y10S438/977
摘要： In accordance with a specific embodiment, a method of processing a semiconductor substrate is disclosed whereby the substrate is thinned, and the dice formed on the substrate are singulated by a common process. Trench regions are formed on a backside of the substrate. An isotropic etch of the backside results in a thinning of the substrate while maintaining the depth of the trenches, thereby facilitating singulation of the die.
摘要翻译：根据具体实施例，公开了一种处理半导体衬底的方法，由此使衬底变薄，并且通过公共工艺将形成在衬底上的裸片分割。沟槽区域形成在衬底的背面。背面的各向同性蚀刻导致衬底的薄化，同时保持沟槽的深度，从而有利于模具的分离。

6. 发明授权

US07507638B2 Ultra-thin die and method of fabricating same 有权
标题翻译：超薄模及其制造方法
公开(公告)号：US07507638B2
公开(公告)日：2009-03-24
申请号：US10881144
申请日：2004-06-30
申请人： David P. Mancini , Young Sir Chung , William J. Dauksher , Donald F. Weston , Steven R. Young , Robert W. Baird
发明人： David P. Mancini , Young Sir Chung , William J. Dauksher , Donald F. Weston , Steven R. Young , Robert W. Baird
IPC分类号： H01L21/30
CPC分类号： H01L21/3065 , H01L21/78 , Y10S438/977
摘要： In accordance with a specific embodiment, a method of processing a semiconductor substrate is disclosed whereby the substrate is thinned, and the dice formed on the substrate are singulated by a common process. Trench regions are formed on a backside of the substrate. An isotropic etch of the backside results in a thinning of the substrate while maintaining the depth of the trenches, thereby facilitating singulation of the die.
摘要翻译：根据具体实施例，公开了一种处理半导体衬底的方法，由此使衬底变薄，并且通过公共工艺将形成在衬底上的裸片分割。沟槽区域形成在衬底的背面。背面的各向同性蚀刻导致衬底的薄化，同时保持沟槽的深度，从而有利于模具的分离。

7. 发明申请

US20120214047A1 METHOD FOR HIGH VOLUME MANUFACTURING OF THIN FILM BATTERIES 审中-公开
标题翻译：薄膜电池高容量制造方法
公开(公告)号：US20120214047A1
公开(公告)日：2012-08-23
申请号：US13461286
申请日：2012-05-01
申请人： BYUNG SUNG KWAK , Nety M. Krishna , Kurt Eisenbeiser , William J. Dauksher , Jon Candelaria
发明人： BYUNG SUNG KWAK , Nety M. Krishna , Kurt Eisenbeiser , William J. Dauksher , Jon Candelaria
IPC分类号： H01M4/70 , H01M2/02
CPC分类号： H01M10/0585 , H01M6/40 , H01M10/0436 , H01M10/052 , H01M2300/0068
摘要： Concepts and methods are provided to reduce the cost and complexity of thin film battery (TFB) high volume manufacturing by eliminating and/or minimizing the use of conventional physical (shadow) masks. Laser scribing and other alternative physical maskless patterning techniques meet certain or all of the patterning requirements. In one embodiment, a method of manufacturing thin film batteries comprises providing a substrate, depositing layers corresponding to a thin film battery structure on the substrate, the layers including, in order of deposition, a cathode, an electrolyte and an anode, wherein at least one of the deposited layers is unpatterned by a physical mask during deposition, depositing a protective coating, and scribing the layers and the protective coating. Further, the edges of the layers may be covered by an encapsulation layer. Furthermore, the layers may be deposited on two substrates and then laminated to form the thin film battery.
摘要翻译：提供了概念和方法，以通过消除和/或最小化常规物理（阴影）掩模的使用来降低薄膜电池（TFB）大批量制造的成本和复杂性。激光划线和其他可选的物理无掩模图案化技术满足某些或所有图案化要求。在一个实施例中，制造薄膜电池的方法包括提供衬底，在衬底上沉积与薄膜电池结构相对应的层，所述层按沉积顺序包括阴极，电解质和阳极，其中至少沉积层中的一个在沉积期间由物理掩模未图案化，沉积保护涂层，以及划刻层和保护涂层。此外，层的边缘可以被封装层覆盖。此外，可以将这些层沉积在两个基板上，然后层压以形成薄膜电池。

8. 发明授权

US5899728A Method of forming a lithographic mask 失效
标题翻译：形成光刻掩模的方法
公开(公告)号：US5899728A
公开(公告)日：1999-05-04
申请号：US996164
申请日：1997-12-22
申请人： Pawitter J. S. Mangat , William J. Dauksher
发明人： Pawitter J. S. Mangat , William J. Dauksher
IPC分类号： G03F1/00 , G03F7/20 , H01L21/027 , H01L21/30 , H01L21/46
CPC分类号： H01L21/0274 , G03F1/50 , G03F7/2037 , H01J2237/31777 , Y10S438/949
摘要： A method of forming a lithographic mask that comprises the steps of obtaining a first substrate having a first base and a first layer over the first base. The first layer is patterned, as is at least a portion of the entire thickness of the first base to form a first pattern. A second substrate having a second base is obtained and a second layer is formed over the second base. A third layer is formed over the second layer. The third layer is patterned to form an attenuating pattern corresponding to a semiconductor device feature pattern and the first and second substrates are bonded after patterning the first layer. The second base is etched to remove the entire thickness of the second base corresponding to the first pattern. The steps need not be sequential in the above method.
摘要翻译：一种形成光刻掩模的方法，包括以下步骤：在第一基底上获得具有第一基底和第一层的第一基底。第一层被图案化，至少是第一基底的整个厚度的至少一部分以形成第一图案。获得具有第二基底的第二基底，并在第二基底上形成第二层。在第二层上形成第三层。将第三层图案化以形成对应于半导体器件特征图案的衰减图案，并且在图案化第一层之后第一和第二基板被接合。蚀刻第二基底以除去对应于第一图案的第二基底的整个厚度。这些步骤不需要在上述方法中是顺序的。

9. 发明授权

US5266183A Method for plating an x-ray mask 失效
标题翻译：电镀X射线掩模的方法
公开(公告)号：US5266183A
公开(公告)日：1993-11-30
申请号：US881111
申请日：1992-05-11
申请人： William J. Dauksher , Douglas J. Resnick
发明人： William J. Dauksher , Douglas J. Resnick
IPC分类号： G03F1/16 , C25D3/48 , G21K3/00 , H01L21/027
CPC分类号： C25D3/48
摘要： A method for making an x-ray mask having a low-stress absorber layer. A substrate is placed in an electroplating system and an electroplating solution is provided to the electroplating system. The electroplating solution has a gold sulfite based component and a thallium based component. The thallium based component is at a concentration of at least 20 milligrams per liter of electroplating solution. A gold containing absorber layer is electrodeposited onto the substrate. A high concentration of thallium produces an absorber layer insensitive to the brightener concentration in the electroplating solution and having a stress less than approximately 1.times.10.sup.8 dynes/cm.sup.2. In addition, the absorber has a small grain size, a low surface roughness, and a low defect density. Thus, the absorber layer is easier to inspect and, if required, to repair.
摘要翻译：一种制造具有低应力吸收层的X射线掩模的方法。将基板放置在电镀系统中，并将电镀溶液提供给电镀系统。电镀溶液具有亚硫酸金属组分和基于铊的组分。基于铊的组分的浓度为每升电镀溶液至少20毫克。将含金吸收层电沉积到基底上。高浓度的铊产生对电镀溶液中的增白剂浓度不敏感并具有小于约1×10 8达因/ cm 2的应力的吸收层。此外，吸收体具有小的晶粒尺寸，低表面粗糙度和低缺陷密度。因此，吸收层更容易检查，如果需要，进行修理。

10. 发明授权

US08168318B2 Method for high volume manufacturing of thin film batteries 有权
标题翻译：薄膜电池大批量生产方法
公开(公告)号：US08168318B2
公开(公告)日：2012-05-01
申请号：US12257049
申请日：2008-10-23
申请人： Byung Sung Kwak , Nety M. Krishna , Kurt Eisenbeiser , William J. Dauksher , Jon Candelaria
发明人： Byung Sung Kwak , Nety M. Krishna , Kurt Eisenbeiser , William J. Dauksher , Jon Candelaria
IPC分类号： H01M6/16 , H01M6/18 , H01M6/46
CPC分类号： H01M10/0585 , H01M6/40 , H01M10/0436 , H01M10/052 , H01M2300/0068
摘要： Concepts and methods are provided to reduce the cost and complexity of thin film battery (TFB) high volume manufacturing by eliminating and/or minimizing the use of conventional physical (shadow) masks. Laser scribing and other alternative physical maskless patterning techniques meet certain or all of the patterning requirements. In one embodiment, a method of manufacturing thin film batteries comprises providing a substrate, depositing layers corresponding to a thin film battery structure on the substrate, the layers including, in order of deposition, a cathode, an electrolyte and an anode, wherein at least one of the deposited layers is unpatterned by a physical mask during deposition, depositing a protective coating, and scribing the layers and the protective coating. Further, the edges of the layers may be covered by an encapsulation layer. Furthermore, the layers may be deposited on two substrates and then laminated to form the thin film battery.
摘要翻译：提供了概念和方法，以通过消除和/或最小化常规物理（阴影）掩模的使用来降低薄膜电池（TFB）大批量制造的成本和复杂性。激光划线和其他可选的物理无掩模图案化技术满足某些或所有图案化要求。在一个实施例中，制造薄膜电池的方法包括提供衬底，在衬底上沉积与薄膜电池结构相对应的层，所述层按沉积顺序包括阴极，电解质和阳极，其中至少沉积层中的一个在沉积期间由物理掩模未图案化，沉积保护涂层，以及划刻层和保护涂层。此外，层的边缘可以被封装层覆盖。此外，可以将这些层沉积在两个基板上，然后层压以形成薄膜电池。

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