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1. 发明申请

US20110291207A1 TRANSDUCER DEVICES HAVING DIFFERENT FREQUENCIES BASED ON LAYER THICKNESSES AND METHOD OF FABRICATING THE SAME 有权
标题翻译：具有基于层厚度的不同频率的传感器件及其制造方法
公开(公告)号：US20110291207A1
公开(公告)日：2011-12-01
申请号：US12789685
申请日：2010-05-28
申请人： David MARTIN , John CHOY
发明人： David MARTIN , John CHOY
IPC分类号： H01L29/84 , H01L21/66
CPC分类号： H01L41/253 , G10K9/125 , H01L27/20 , Y10T29/42
摘要： A transducer array on a common substrate includes a membrane and first and second transducer devices. The membrane is formed on the common substrate, and includes a lower layer and an upper layer. The first transducer device includes a first resonator stack formed on at least the lower layer in a first portion of the membrane, the upper layer having a first thickness in the first portion of the membrane. The second transducer device includes a second resonator stack formed on at least the lower layer in a second portion of the membrane, the upper layer having a second thickness in the second portion of the membrane, where the second thickness is different from the first thickness, such that a first resonant frequency of the first transducer device is different from a second resonant frequency of the second transducer device.
摘要翻译：公共衬底上的换能器阵列包括膜和第一和第二换能器装置。膜形成在公共基板上，并且包括下层和上层。第一换能器装置包括形成在膜的第一部分中的至少下层上的第一谐振器叠层，上层在膜的第一部分具有第一厚度。第二换能器装置包括形成在膜的第二部分中的至少下层上的第二谐振器叠层，上层在膜的第二部分具有第二厚度，其中第二厚度不同于第一厚度，使得第一换能器装置的第一谐振频率与第二换能器装置的第二共振频率不同。

2. 发明申请

US20110088234A1 TEMPERATURE CONTROL OF MICROMACHINED TRANSDUCERS 有权
标题翻译：微型传感器的温度控制
公开(公告)号：US20110088234A1
公开(公告)日：2011-04-21
申请号：US12978762
申请日：2010-12-27
申请人： David MARTIN , Donald LEE , John CHOY , Joel PHILLIBER , Osvaldo BUCCAFUSCA
发明人： David MARTIN , Donald LEE , John CHOY , Joel PHILLIBER , Osvaldo BUCCAFUSCA
IPC分类号： H01L41/22
CPC分类号： B81B3/0072 , B06B1/0625 , B06B1/0666 , B81B2201/0257 , B81B2201/0271 , G10K9/125 , G10K9/18 , H01L41/0973 , H01L41/31 , H04R17/02 , H04R31/00 , Y10T29/42
摘要： A micromachined structure, comprises a substrate and a cavity in the substrate. The micromachined structure comprises a membrane layer disposed over the substrate and spanning the cavity.
摘要翻译：微加工结构包括衬底和衬底中的空腔。微加工结构包括设置在衬底上并跨越空腔的膜层。

3. 发明申请

US20120269372A1 MICROMACHINED HORN 有权
公开(公告)号：US20120269372A1
公开(公告)日：2012-10-25
申请号：US13536917
申请日：2012-06-28
申请人： David MARTIN , Joel PHILLIBER , John CHOY
发明人： David MARTIN , Joel PHILLIBER , John CHOY
IPC分类号： H04R1/20 , H04R1/02
CPC分类号： H04R1/30 , H01L27/20 , H04R17/005 , H04R2201/003 , Y10T29/42
摘要： An acoustic device includes a transducer formed on a first surface of a substrate and an acoustic horn formed in the substrate by a dry-etching process through an opposing second surface of the substrate. The acoustic horn is positioned to amplify sound waves from the transducer and defines a non-linear cross-sectional profile.
摘要翻译：声学装置包括通过基板的相对的第二表面的干蚀刻工艺形成在基板的第一表面上的换能器和形成在基板中的声喇叭。声喇叭被定位成放大来自换能器的声波并且限定非线性横截面轮廓。

4. 发明申请

US20100272310A1 MICROCAP ACOUSTIC TRANSDUCER DEVICE 有权
标题翻译： MICROCAP声学传感器设备
公开(公告)号：US20100272310A1
公开(公告)日：2010-10-28
申请号：US12430966
申请日：2009-04-28
申请人： Joel PHILLIBER , John CHOY , David MARTIN
发明人： Joel PHILLIBER , John CHOY , David MARTIN
IPC分类号： H04R1/02
CPC分类号： H04R31/00
摘要： A device includes a first wafer, a second wafer, a gasket bonding the first wafer to the second wafer to define a cavity between the first wafer and the second wafer, and an acoustic transducer disposed on the first wafer and disposed within the cavity between the first wafer and the second wafer. One or more apertures are provided for communicating an acoustic signal between the acoustic transducer and an exterior of the device. An aperture may be formed in the cavity itself, or the cavity may be hermetically sealed. An aperture may be formed completely through the first wafer and located directly beneath at least a portion of the acoustic transducer.
摘要翻译：一种器件包括第一晶片，第二晶片，将第一晶片连接到第二晶片以在第一晶片和第二晶片之间限定空腔的垫圈，以及设置在第一晶片上并设置在第一晶片之间的空腔内的声换能器第一晶片和第二晶片。提供一个或多个孔，用于在声换能器和装置的外部之间传递声信号。可以在空腔本身中形成孔，或者可以将空腔气密地密封。孔可以完全穿过第一晶片形成，并且直接位于声换能器的至少一部分下方。

5. 发明申请

US20100278368A1 MICROMACHINED HORN 有权
公开(公告)号：US20100278368A1
公开(公告)日：2010-11-04
申请号：US12434092
申请日：2009-05-01
申请人： David MARTIN , Joel PHILLIBER , John CHOY
发明人： David MARTIN , Joel PHILLIBER , John CHOY
IPC分类号： H04R1/20 , H01L21/3065
CPC分类号： H04R1/30 , H01L27/20 , H04R17/005 , H04R2201/003 , Y10T29/42
摘要： An acoustic device includes a transducer formed on a first surface of a substrate and an acoustic horn formed in the substrate by a dry-etching process through an opposing second surface of the substrate. The acoustic horn is positioned to amplify sound waves from the transducer and defines a non-linear cross-sectional profile.
摘要翻译：声学装置包括通过基板的相对的第二表面的干蚀刻工艺形成在基板的第一表面上的换能器和形成在基板中的声喇叭。声喇叭被定位成放大来自换能器的声波并且限定非线性横截面轮廓。

6. 发明申请

US20120293278A1 STACKED BULK ACOUSTIC RESONATOR COMPRISING DISTRIBUTED BRAGG REFLECTOR 审中-公开
标题翻译：包装分布式反射器的堆叠式音箱谐振器
公开(公告)号：US20120293278A1
公开(公告)日：2012-11-22
申请号：US13112407
申请日：2011-05-20
申请人： Dariusz BURAK , Alexandre SHIRAKAWA , John D. LARSON, III , Paul BRADLEY , Richard C. RUBY , Bernhard KOELLE , John CHOY , Kevin J. GRANNEN
发明人： Dariusz BURAK , Alexandre SHIRAKAWA , John D. LARSON, III , Paul BRADLEY , Richard C. RUBY , Bernhard KOELLE , John CHOY , Kevin J. GRANNEN
IPC分类号： H03H9/58
CPC分类号： H03H9/585 , H03H9/0211 , H03H9/1007 , H03H9/1014 , H03H9/173 , H03H9/175
摘要： A device comprises a substrate, an acoustic stack, and a distributed Bragg reflector. The acoustic stack comprises a first electrode formed on the substrate, a first piezoelectric layer formed on the first electrode, a second electrode formed on the first piezoelectric layer, a second piezoelectric layer formed on the second electrode, and a third electrode formed on the second piezoelectric layer. The distributed Bragg reflector is formed adjacent to the acoustic stack and provides it with acoustic isolation.
摘要翻译：一种器件包括衬底，声学堆叠和分布式布拉格反射器。声堆叠包括形成在基板上的第一电极，形成在第一电极上的第一压电层，形成在第一压电层上的第二电极，形成在第二电极上的第二压电层，以及形成在第二电极上的第三电极压电层。分布式布拉格反射器形成在声堆叠附近，并提供声隔离。

7. 发明申请

US20120218057A1 FILM BULK ACOUSTIC RESONATOR COMPRISING A BRIDGE 有权
标题翻译：包括桥梁的电影大容量声学谐振器
公开(公告)号：US20120218057A1
公开(公告)日：2012-08-30
申请号：US13151631
申请日：2011-06-02
申请人： Dariusz BURAK , Phil NIKKEL , Chris FENG , Alexandre SHIRAKAWA , John CHOY
发明人： Dariusz BURAK , Phil NIKKEL , Chris FENG , Alexandre SHIRAKAWA , John CHOY
IPC分类号： H03H9/54
CPC分类号： H03H9/132 , H03H3/04 , H03H9/02007 , H03H9/02086 , H03H9/173 , H03H9/175
摘要： A film bulk acoustic resonator (FBAR) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is disposed between the first electrode and the piezoelectric layer.
摘要翻译：薄膜体声波谐振器（FBAR）结构包括设置在基板上的第一电极，设置在第一电极上的压电层和设置在第一压电层上的第二电极。桥接器设置在第一电极和压电层之间。

8. 发明申请

US20120206015A1 ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE 审中-公开
标题翻译：包含桥梁的声学谐振器结构
公开(公告)号：US20120206015A1
公开(公告)日：2012-08-16
申请号：US13445268
申请日：2012-04-12
申请人： John CHOY , Chris FENG , Phil NIKKEL
发明人： John CHOY , Chris FENG , Phil NIKKEL
IPC分类号： H01L41/08 , B05D5/12
CPC分类号： H03H9/02149 , H03H9/02118 , H03H9/132 , H03H9/173
摘要： An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator.
摘要翻译：声谐振器包括第一电极，第二电极和设置在第一和第二电极之间的压电层。声谐振器还包括设置在第一电极，第二电极和压电层下方的反射元件。反射元件，第一电极，第二电极和压电层的重叠包括声谐振器的有效区域。声谐振器还包括与声谐振器的有源区域的终端相邻的桥。

9. 发明申请

US20120194297A1 ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE 审中-公开
公开(公告)号：US20120194297A1
公开(公告)日：2012-08-02
申请号：US13443113
申请日：2012-04-10
申请人： John CHOY , Chris FENG , Phil NIKKEL
发明人： John CHOY , Chris FENG , Phil NIKKEL
IPC分类号： H03H9/15 , H01L41/04
CPC分类号： H03H9/02149 , H03H9/02118 , H03H9/132 , H03H9/173
摘要： An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator.

10. 发明申请

US20130106534A1 PLANARIZED ELECTRODE FOR IMPROVED PERFORMANCE IN BULK ACOUSTIC RESONATORS 有权
标题翻译：用于改进大容量谐波谐振器性能的平面电极
公开(公告)号：US20130106534A1
公开(公告)日：2013-05-02
申请号：US13286038
申请日：2011-10-31
申请人： Dariusz BURAK , Phil NIKKEL , John CHOY , Alexandre SHIRAKAWA , Stefan BADER
发明人： Dariusz BURAK , Phil NIKKEL , John CHOY , Alexandre SHIRAKAWA , Stefan BADER
IPC分类号： H03H9/54
CPC分类号： H03H9/173
摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a cavity disposed in a substrate; a first electrode disposed over the cavity; a planarization layer disposed adjacent to the first electrode; a piezoelectric layer disposed over the first electrode; and a second electrode disposed over the piezoelectric layer.
摘要翻译：在代表性实施例中，体声波（BAW）谐振器包括：设置在基板中的空腔; 设置在所述空腔上的第一电极; 与第一电极相邻设置的平坦化层; 设置在所述第一电极上的压电层; 以及设置在所述压电层上的第二电极。

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