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1. 发明授权

US09525399B2 Planarized electrode for improved performance in bulk acoustic resonators 有权
标题翻译：平面化电极，用于改善体声波谐振器的性能
公开(公告)号：US09525399B2
公开(公告)日：2016-12-20
申请号：US13286038
申请日：2011-10-31
申请人： Dariusz Burak , Phil Nikkel , John Choy , Alexandre Shirakawa , Stefan Bader
发明人： Dariusz Burak , Phil Nikkel , John Choy , Alexandre Shirakawa , Stefan Bader
IPC分类号： H03H9/15 , H03H9/17 , H03H3/02
CPC分类号： H03H9/173
摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a cavity disposed in a substrate; a first electrode disposed over the cavity; a planarization layer disposed adjacent to the first electrode; a piezoelectric layer disposed over the first electrode; and a second electrode disposed over the piezoelectric layer.
摘要翻译：在代表性实施例中，体声波（BAW）谐振器包括：设置在基板中的空腔; 设置在所述空腔上的第一电极; 与第一电极相邻设置的平坦化层; 设置在所述第一电极上的压电层; 以及设置在所述压电层上的第二电极。

2. 发明授权

US09203374B2 Film bulk acoustic resonator comprising a bridge 有权
标题翻译：包括桥的膜体声波谐振器
公开(公告)号：US09203374B2
公开(公告)日：2015-12-01
申请号：US13151631
申请日：2011-06-02
申请人： Dariusz Burak , Phil Nikkel , Chris Feng , Alexandre Shirakawa , John Choy
发明人： Dariusz Burak , Phil Nikkel , Chris Feng , Alexandre Shirakawa , John Choy
IPC分类号： H03H9/15 , H03H9/13 , H03H9/02 , H03H9/17 , H03H3/04
CPC分类号： H03H9/132 , H03H3/04 , H03H9/02007 , H03H9/02086 , H03H9/173 , H03H9/175
摘要： A film bulk acoustic resonator (FBAR) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is disposed between the first electrode and the piezoelectric layer.
摘要翻译：薄膜体声波谐振器（FBAR）结构包括设置在基板上的第一电极，设置在第一电极上的压电层和设置在第一压电层上的第二电极。桥接器设置在第一电极和压电层之间。

3. 发明授权

US09136818B2 Stacked acoustic resonator comprising a bridge 有权
标题翻译：包括桥的堆叠声谐振器
公开(公告)号：US09136818B2
公开(公告)日：2015-09-15
申请号：US13074262
申请日：2011-03-29
申请人： Dariusz Burak , Alexandre Shirakawa , Stefan Bader
发明人： Dariusz Burak , Alexandre Shirakawa , Stefan Bader
IPC分类号： H03H9/54 , H03H9/02 , H03H9/13 , H03H9/58
CPC分类号： H03H9/02 , H03H9/02086 , H03H9/132 , H03H9/585
摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.
摘要翻译：根据代表性实施例，体声波（BAW）谐振器结构包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层; 设置在所述第一压电层上的第二电极; 设置在所述第二电极上的第二压电层; 设置在所述第二压电层上的第三电极; 以及设置在所述第一电极和所述第三电极之间的桥。

4. 发明申请

US20120319530A1 BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER 有权
标题翻译：包含非压电层的大容量谐振谐振器
公开(公告)号：US20120319530A1
公开(公告)日：2012-12-20
申请号：US13161946
申请日：2011-06-16
申请人： Dariusz BURAK , Jyrki KAITILA , Alexandre SHIRAKAWA , Martin Handtmann , Phil NIKKEL
发明人： Dariusz BURAK , Jyrki KAITILA , Alexandre SHIRAKAWA , Martin Handtmann , Phil NIKKEL
IPC分类号： H01L41/00
CPC分类号： H03H9/173 , H03H9/585
摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer, wherein c-axis orientations of crystals of the first piezoelectric layer are substantially aligned with one another; a second piezoelectric layer disposed over the second electrode; a non-piezoelectric layer; and a third electrode disposed over the second piezoelectric layer.
摘要翻译：在代表性的实施例中，体声波（BAW）谐振器结构包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层; 设置在所述第一压电层上的第二电极，其中所述第一压电层的晶体的c轴取向基本上彼此对准; 设置在所述第二电极上的第二压电层; 非压电层; 以及设置在第二压电层上的第三电极。

5. 发明申请

US20120218058A1 COUPLED RESONATOR FILTER COMPRISING A BRIDGE AND FRAME ELEMENTS 有权
标题翻译：包括桥梁和框架元件的联合共振器过滤器
公开(公告)号：US20120218058A1
公开(公告)日：2012-08-30
申请号：US13167939
申请日：2011-06-24
申请人： Dariusz BURAK , Alexandre SHIRAKAWA , Chris FENG , Phil NIKKEL , Stefan BADER
发明人： Dariusz BURAK , Alexandre SHIRAKAWA , Chris FENG , Phil NIKKEL , Stefan BADER
IPC分类号： H03H9/54
CPC分类号： H03H9/0211 , H03H3/04 , H03H9/02007 , H03H9/132 , H03H9/584 , H03H9/587 , H03H9/589
摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode.
摘要翻译：根据代表性实施例，体声波（BAW）谐振器结构包括：第一BAW谐振器，包括第一下电极，第一上电极和设置在第一下电极和第一上电极之间的第一压电层; 第二BAW谐振器，包括设置在所述第二下电极和所述第二上电极之间的第二下电极，第二上电极和第二压电层; 设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层; 以及布置在第一BAW谐振器的第一下电极和第二BAW谐振器的第二上电极之间的桥。内部凸起区域或外部凸起区域或两者均设置在第二上部电极上。

6. 发明授权

US06813297B2 Material systems for long wavelength lasers grown on GaSb or InAs substrates 失效
标题翻译：用于在GaSb或InAs衬底上生长的长波长激光器的材料系统
公开(公告)号：US06813297B2
公开(公告)日：2004-11-02
申请号：US10196872
申请日：2002-07-16
申请人： Dariusz Burak
发明人： Dariusz Burak
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/183 , H01S5/3235 , H01S5/34306
摘要： A vertical cavity surface emitting laser (VCSEL) capable of producing long-wavelength light has a substrate of GaSb or InAs, and an active region with alternating quantum wells and barrier layers. The target wavelength range is preferably between 1.2-1.4 um. The quantum well is made of GaInSbP, GaInSbAs, AlInSbAs, or AlInSbP, and the barrier layers are made of AlInSbP, AlGaSbP, AlInSbAs, AlGaSbAs, or AlSbPAs. The active region is sandwiched between two mirror stacks that are preferably epitaxially grown Distributed Bragg Reflectors. The active region has large conduction and valence band offsets (&Dgr;Ec and &Dgr;Ev) for effective carrier containment over the wide range of ambient temperatures in which the VCSEL is expected to function. The active region can be designed to have little or no lattice strain on the substrate.
摘要翻译：能够产生长波长光的垂直腔表面发射激光器（VCSEL）具有GaSb或InAs的衬底和具有交替的量子阱和阻挡层的有源区。目标波长范围优选在1.2-1.4μm之间。量子阱由GaInSbP，GaInSbAs，AlInSbAs或AlInSbP制成，并且阻挡层由AlInSbP，AlGaSbP，AlInSbAs，AlGaSbAs或AlSbPAs制成。有源区夹在优选外延生长的分布布拉格反射器的两个反射镜叠层之间。有源区域在VCSEL预期起作用的宽范围的环境温度范围内具有大的传导和价带偏移（DeltaEc和DeltaEv），用于有效的载流子保持。有源区可以被设计成在衬底上几乎没有或没有晶格应变。

7. 发明授权

US09154112B2 Coupled resonator filter comprising a bridge 有权
标题翻译：耦合谐振滤波器包括桥
公开(公告)号：US09154112B2
公开(公告)日：2015-10-06
申请号：US13036489
申请日：2011-02-28
申请人： Dariusz Burak
发明人： Dariusz Burak
IPC分类号： H03H9/58 , H03H9/02 , H03H9/13
CPC分类号： H03H9/58 , H03H9/02086 , H03H9/02118 , H03H9/132 , H03H9/584
摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator.
摘要翻译：根据代表性实施例，体声波（BAW）谐振器结构包括：第一BAW谐振器，包括第一下电极，第一上电极和设置在第一下电极和第一上电极之间的第一压电层; 第二BAW谐振器，包括设置在所述第二下电极和所述第二上电极之间的第二下电极，第二上电极和第二压电层; 设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层; 以及布置在第一BAW谐振器的第一下电极和第二BAW谐振器的第二上电极之间的桥。

8. 发明授权

US09148117B2 Coupled resonator filter comprising a bridge and frame elements 有权
标题翻译：耦合谐振滤波器，包括桥接元件和框架元件
公开(公告)号：US09148117B2
公开(公告)日：2015-09-29
申请号：US13167939
申请日：2011-06-24
申请人： Dariusz Burak , Alexandre Shirakawa , Chris Feng , Phil Nikkel , Stefan Bader
发明人： Dariusz Burak , Alexandre Shirakawa , Chris Feng , Phil Nikkel , Stefan Bader
IPC分类号： H03H9/54 , H03H9/02 , H03H3/04 , H03H9/13 , H03H9/58
CPC分类号： H03H9/0211 , H03H3/04 , H03H9/02007 , H03H9/132 , H03H9/584 , H03H9/587 , H03H9/589
摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode.
摘要翻译：根据代表性实施例，体声波（BAW）谐振器结构包括：第一BAW谐振器，包括第一下电极，第一上电极和设置在第一下电极和第一上电极之间的第一压电层; 第二BAW谐振器，包括设置在所述第二下电极和所述第二上电极之间的第二下电极，第二上电极和第二压电层; 设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层; 以及布置在第一BAW谐振器的第一下电极和第二BAW谐振器的第二上电极之间的桥。内部凸起区域或外部凸起区域或两者均设置在第二上部电极上。

9. 发明授权

US09048812B2 Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer 有权
标题翻译：包含在压电层内形成的桥的体声波谐振器
公开(公告)号：US09048812B2
公开(公告)日：2015-06-02
申请号：US13208909
申请日：2011-08-12
申请人： Dariusz Burak , Phil Nikkel , Jyrki Kaitila , John D. Larson, III , Alexandre Shirakawa
发明人： Dariusz Burak , Phil Nikkel , Jyrki Kaitila , John D. Larson, III , Alexandre Shirakawa
IPC分类号： H03H9/54 , H03H9/13 , H03H9/02 , H03H3/04 , H03H9/17 , H03H9/58
CPC分类号： H03H9/132 , H03H3/04 , H03H9/02007 , H03H9/02118 , H03H9/173 , H03H9/175 , H03H9/584 , H03H9/585 , H03H9/587 , H03H9/589
摘要： A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer.
摘要翻译：体声波（BAW）结构包括设置在基板上的第一电极，设置在第一电极上的压电层和设置在第一压电层上的第二电极。桥接器形成在压电层内，桥被压电层的压电材料包围。

10. 发明授权

US08896395B2 Accoustic resonator having multiple lateral features 有权
标题翻译：具有多个横向特征的声谐振器
公开(公告)号：US08896395B2
公开(公告)日：2014-11-25
申请号：US13232334
申请日：2011-09-14
申请人： Dariusz Burak , Phil Nikkel , Chris Feng
发明人： Dariusz Burak , Phil Nikkel , Chris Feng
IPC分类号： H03H9/00 , H03H9/13 , H03H9/17 , H03H9/02 , H03H9/15
CPC分类号： H03H9/132 , H03H9/02086 , H03H9/131 , H03H9/173
摘要： A thin film bulk acoustic resonator (FBAR) includes a first electrode stacked on a substrate over a cavity, a piezoelectric layer stacked on the first electrode, and a second electrode stacked on the piezoelectric layer. Multiple lateral features are formed on a surface of the second electrode, the lateral features including multiple stepped structures.
摘要翻译：薄膜体声波谐振器（FBAR）包括堆叠在空腔上的衬底上的第一电极，堆叠在第一电极上的压电层和堆叠在压电层上的第二电极。多个横向特征形成在第二电极的表面上，横向特征包括多个阶梯结构。

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