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1. 发明授权

US06624651B1 Kerf circuit for modeling of BEOL capacitances 有权
标题翻译：用于BEOL电容建模的Kerf电路
公开(公告)号：US06624651B1
公开(公告)日：2003-09-23
申请号：US09684849
申请日：2000-10-06
申请人： David M. Fried , Peter A. Habitz
发明人： David M. Fried , Peter A. Habitz
IPC分类号： G01R3126
CPC分类号： G01R31/006
摘要： A kerf circuit for modeling of Back End Of Line (BEOL) capacitances is disclosed. The kerf circuit contains a clock circuit connected to a number of capacitance testing circuits. Each capacitance testing circuit acts a “bay” that can be configured to test one particular capacitance. The clock circuit allows the capacitance testing circuits to charge and discharge the capacitive structures being tested. By having a number of different capacitance testing circuits, capacitances of many different structures may be tested at one time. This is particularly true if the kerf circuit is repeated several or many times, with each different kerf circuit containing different capacitive testing circuits that themselves contain different capacitive structures. The kerf circuit interfaces to testing equipment through pads. The pads connect to each capacitive testing circuit and allow capacitance measurements to be performed by measuring current.
摘要翻译：公开了一种用于线路后端（BEOL）电容建模的切口电路。切口电路包含连接到多个电容测试电路的时钟电路。每个电容测试电路都作为一个“间隔”，可以配置为测试一个特定的电容。时钟电路允许电容测试电路对被测试的电容结构进行充电和放电。通过具有多个不同的电容测试电路，可以一次测试许多不同结构的电容。如果切割电路重复数次或多次，则特别如此，每个不同的切屑回路包含不同的电容测试电路，它们本身包含不同的电容结构。切口电路通过焊盘与测试设备接口。焊盘连接到每个电容测试电路，并通过测量电流来进行电容测量。

2. 发明授权

US09858368B2 Integrating manufacturing feedback into integrated circuit structure design 有权
公开(公告)号：US09858368B2
公开(公告)日：2018-01-02
申请号：US13182108
申请日：2011-07-13
申请人： Nathan C. Buck , Brian M. Dreibelbis , John P. Dubuque , Eric A. Foreman , Peter A. Habitz , Jeffrey G. Hemmett , Natesan Venkateswaran , Chandramouli Visweswariah , Xiaoyue Wang , Vladmimir Zolotov
发明人： Nathan C. Buck , Brian M. Dreibelbis , John P. Dubuque , Eric A. Foreman , Peter A. Habitz , Jeffrey G. Hemmett , Natesan Venkateswaran , Chandramouli Visweswariah , Xiaoyue Wang , Vladmimir Zolotov
IPC分类号： G06F17/50
CPC分类号： G06F17/5036 , G06F2217/84
摘要： Solutions for integrating manufacturing feedback into an integrated circuit design are disclosed. In one embodiment, a computer-implemented method is disclosed including: defining an acceptable yield requirement for a first integrated circuit product; obtaining manufacturing data about the first integrated circuit product; performing a regression analysis on data representing paths in the first integrated circuit product to define a plurality of parameter settings based upon the acceptable yield requirement and the manufacturing data; determining a projection corner associated with the parameter settings for satisfying the acceptable yield requirement; and modifying a design of a second integrated circuit product based upon the projection corner and the plurality of parameter settings.

3. 发明授权

US09157956B2 Adaptive power control using timing canonicals 有权
标题翻译：使用定时规范的自适应功率控制
公开(公告)号：US09157956B2
公开(公告)日：2015-10-13
申请号：US13614564
申请日：2012-09-13
申请人： Jeanne P. Bickford , Eric A. Foreman , Peter A. Habitz , Jeffrey G. Hemmett , Clarence R. Ogilvie , Tad J. Wilder , Vladimir Zolotov
发明人： Jeanne P. Bickford , Eric A. Foreman , Peter A. Habitz , Jeffrey G. Hemmett , Clarence R. Ogilvie , Tad J. Wilder , Vladimir Zolotov
IPC分类号： G06F17/50 , G01R31/317 , G01R31/30
CPC分类号： G01R31/31718 , G01R31/3008
摘要： A plurality of digital circuits are manufactured from an identical circuit design. A power controller is operatively connected to the digital circuits, and a non-transitory storage medium is operatively connected to the power controller. The digital circuits are classified into different voltage bins, and each of the voltage bins has a current leakage limit. Each of the digital circuits has been previously tested to operate within a corresponding current leakage limit of a corresponding voltage bin into which each of the digital circuits has been classified. The non-transitory storage medium stores boundaries of the voltage bins as speed-binning test data. The power controller controls power-supply signals applied differently for each of the digital circuits based on which bin each of the digital circuit has been classified and the speed-binning test data.
摘要翻译：由相同的电路设计制造多个数字电路。功率控制器可操作地连接到数字电路，并且非瞬时存储介质可操作地连接到功率控制器。数字电路分为不同的电压箱，每个电压箱都有漏电极限。已经对每个数字电路进行了测试，以在对应的电压仓的相应的电流泄漏极限内运行，每个数字电路已被分类到该对应的电压仓。非瞬时存储介质存储电压仓的边界作为速度分组测试数据。功率控制器控制基于每个数字电路已被分类的每个数字电路不同地施加的电源信号和速度合并测试数据。

4. 发明授权

US09058034B2 Integrated circuit product yield optimization using the results of performance path testing 有权
标题翻译：集成电路产品产量优化使用性能路径测试的结果
公开(公告)号：US09058034B2
公开(公告)日：2015-06-16
申请号：US13570285
申请日：2012-08-09
申请人： Jeanne P. Bickford , Peter A. Habitz , Vikram Iyengar , Jinjun Xiong
发明人： Jeanne P. Bickford , Peter A. Habitz , Vikram Iyengar , Jinjun Xiong
IPC分类号： G06F17/50 , G05B19/418
CPC分类号： G05B19/41875 , G05B2219/32182 , G05B2219/32187 , G05B2219/32208 , G05B2219/37224 , Y02P80/30 , Y02P90/22
摘要： Disclosed are embodiments of a method, system and computer program product for optimizing integrated circuit product yield by re-centering the manufacturing line and, optionally, adjusting wafer-level chip dispositioning rules based on the results of post-manufacture (e.g., wafer-level or module-level) performance path testing. In the embodiments, a correlation is made between in-line parameter measurements and performance measurements acquired during the post-manufacture performance path testing. Then, based on this correlation, the manufacturing line can be re-centered. Optionally, an additional correlation is made between performance measurements acquired during wafer-level performance testing and performance measurements acquired particularly during module-level performance path testing and, based on this additional correlation, adjustments can be made to the wafer-level chip dispositioning rules to further minimize yield loss.
摘要翻译：公开了用于通过使生产线重新对中来优化集成电路产品产量的方法，系统和计算机程序产品的实施例，并且可选地，基于后期制造的结果调整晶片级芯片布置规则（例如，晶片级或模块级）性能路径测试。在实施例中，在后续制造性能路径测试期间获得的在线参数测量和性能测量之间进行相关。然后，基于这种相关性，生产线可以重新居中。可选地，在晶片级性能测试期间获得的性能测量和特别在模块级性能路径测试期间获得的性能测量之间进行附加的相关性，并且基于该附加相关性，可以对晶片级芯片布置规则进行调整进一步降低产量损失。

5. 发明授权

US08726201B2 Method and system to predict a number of electromigration critical elements 失效
标题翻译：预测一些电迁移关键要素的方法和系统
公开(公告)号：US08726201B2
公开(公告)日：2014-05-13
申请号：US12780138
申请日：2010-05-14
申请人： Jeanne P. Bickford , Peter A. Habitz , Baozhen Li , Paul S. McLaughlin , Dileep N. Netrabile
发明人： Jeanne P. Bickford , Peter A. Habitz , Baozhen Li , Paul S. McLaughlin , Dileep N. Netrabile
IPC分类号： G06F17/50
CPC分类号： G06F17/5045 , G06F2217/10
摘要： A method and system to predict a number of electromigration critical elements in semiconductor products. This method includes determining critical element factors for a plurality of library elements in a circuit design library using a design tool running on a computer device and based on at least one of an increased reliability temperature and an increased expected current. The method also includes determining a number of critical elements in a product based on: (i) numbers of respective ones of the plurality of library elements comprised in the product, and (ii) the critical element factors.
摘要翻译：一种用于预测半导体产品中多个电迁移关键元件的方法和系统。该方法包括使用运行在计算机设备上的设计工具并且基于增加的可靠性温度和增加的预期电流中的至少一个来确定电路设计库中的多个库元件的关键要素因子。该方法还包括：（i）产品中包含的多个库元素中的相应数量的数量，以及（ii）关键要素因素来确定产品中的关键元素的数量。

6. 发明申请

US20130036395A1 EFFICIENT SLACK PROJECTION FOR TRUNCATED DISTRIBUTIONS 失效
标题翻译：截断分布的有效插值投影
公开(公告)号：US20130036395A1
公开(公告)日：2013-02-07
申请号：US13197320
申请日：2011-08-03
申请人： Eric A. Foreman , James C. Gregerson , Peter A. Habitz , Jeffrey G. Hemmett , Debjit Sinha , Natesan Venkateswaran , Chandramouli Visweswariah , Xiaoyue Wang , Vladmimir Zolotov
发明人： Eric A. Foreman , James C. Gregerson , Peter A. Habitz , Jeffrey G. Hemmett , Debjit Sinha , Natesan Venkateswaran , Chandramouli Visweswariah , Xiaoyue Wang , Vladmimir Zolotov
IPC分类号： G06F9/455 , G06F17/50
CPC分类号： G06F17/5031
摘要： Aspects of the present invention provide solutions for projecting slack in an integrated circuit. A statistical static timing analysis (SSTA) is computed to get a set of Gaussian distributions over a plurality of variation sources in the integrated circuit. Based on the Gaussian distributions, a truncated subset and a remainder subset of the Gaussian distributions are identified. Then data factors that represent a ratio between the remainder subset and the truncated subset are obtained. These data factors are applied to the SSTA to root sum square (RSS) project the slack for the integrated circuit that takes into account the absence of the truncated subset.
摘要翻译：本发明的方面提供了用于在集成电路中突出松弛的解决方案。计算统计静态时序分析（SSTA）以在集成电路中的多个变化源上获得一组高斯分布。基于高斯分布，识别高斯分布的截断子集和余数子集。然后获得表示余数子集和截断子集之间的比率的数据因子。这些数据因子被应用于SSTA到根平方（RSS）项目，考虑到缺少截断子集的集成电路的松弛。

7. 发明申请

US20130018617A1 INTEGRATING MANUFACTURING FEEDBACK INTO INTEGRATED CIRCUIT STRUCTURE DESIGN 有权
标题翻译：集成制造反馈到集成电路结构设计
公开(公告)号：US20130018617A1
公开(公告)日：2013-01-17
申请号：US13182108
申请日：2011-07-13
申请人： Nathan C. Buck , Brian M. Dreibelbis , John P. Dubuque , Eric A. Foreman , Peter A. Habitz , Jeffrey G. Hemmett , Natesan Venkateswaran , Chandramouli Visweswariah , Xiaoyue Wang , Vladmimir Zolotov
发明人： Nathan C. Buck , Brian M. Dreibelbis , John P. Dubuque , Eric A. Foreman , Peter A. Habitz , Jeffrey G. Hemmett , Natesan Venkateswaran , Chandramouli Visweswariah , Xiaoyue Wang , Vladmimir Zolotov
IPC分类号： G06F19/00
CPC分类号： G06F17/5036 , G06F2217/84
摘要： Solutions for integrating manufacturing feedback into an integrated circuit design are disclosed. In one embodiment, a computer-implemented method is disclosed including: defining an acceptable yield requirement for a first integrated circuit product; obtaining manufacturing data about the first integrated circuit product; performing a regression analysis on data representing paths in the first integrated circuit product to define a plurality of parameter settings based upon the acceptable yield requirement and the manufacturing data; determining a projection corner associated with the parameter settings for satisfying the acceptable yield requirement; and modifying a design of a second integrated circuit product based upon the projection corner and the plurality of parameter settings.
摘要翻译：公开了将制造反馈集成到集成电路设计中的解决方案。在一个实施例中，公开了一种计算机实现的方法，包括：为第一集成电路产品定义可接受的收益率要求; 获取关于第一集成电路产品的制造数据; 对表示第一集成电路产品中的路径的数据执行回归分析，以基于可接受的产量要求和制造数据来定义多个参数设置; 确定与参数设置相关联的投影角以满足可接受的产量要求; 以及基于投影角和多个参数设置来修改第二集成电路产品的设计。

8. 发明授权

US08217671B2 Parallel array architecture for constant current electro-migration stress testing 失效
标题翻译：用于恒流电迁移应力测试的并行阵列架构
公开(公告)号：US08217671B2
公开(公告)日：2012-07-10
申请号：US12492619
申请日：2009-06-26
申请人： Kanak B. Agarwal , Peter A. Habitz , Jerry D. Hayes , Ying Liu , Deborah M. Massey , Alvin W. Strong
发明人： Kanak B. Agarwal , Peter A. Habitz , Jerry D. Hayes , Ying Liu , Deborah M. Massey , Alvin W. Strong
IPC分类号： G01R31/00
CPC分类号： G01R31/2858
摘要： A parallel array architecture for constant current electro-migration stress testing is provided. The parallel array architecture comprises a device under test (DUT) array having a plurality of DUTs coupled in parallel and a plurality of localized heating elements associated with respective ones of the DUTs in the DUT array. The architecture further comprises DUT selection logic that isolates individual DUTs within the array. Moreover, the architecture comprises current source logic that provides a reference current and controls the current through the DUTs in the DUT array such that each DUT in the DUT array has substantially a same current density, and current source enable logic for selectively enabling portions for the current source logic. Electro-migration stress testing is performed on the DUTs of the DUT array using the heating elements, the DUT selection logic, current source logic, and current source enable logic.
摘要翻译：提供了一种用于恒流电迁移应力测试的并行阵列架构。并行阵列结构包括被测器件（DUT）阵列，其具有并联耦合的多个DUT和与DUT阵列中相应的DUT相关联的多个局部加热元件。该架构还包括DUT阵列中的各个DUT隔离的DUT选择逻辑。此外，该架构包括提供参考电流并且控制通过DUT阵列中的DUT的电流的电流源逻辑，使得DUT阵列中的每个DUT具有基本上相同的电流密度，以及电流源使能逻辑，用于选择性地使能部分电流源逻辑。使用加热元件，DUT选择逻辑，电流源逻辑和电流源使能逻辑在DUT阵列的DUT上执行电迁移应力测试。

9. 发明授权

US08108816B2 Device history based delay variation adjustment during static timing analysis 有权
标题翻译：静态时序分析期间基于设备历史的延迟变化调整
公开(公告)号：US08108816B2
公开(公告)日：2012-01-31
申请号：US12484293
申请日：2009-06-15
申请人： Eric A. Foreman , Peter A. Habitz , David J. Hathaway , Jeffrey G. Hemmett , Kerim Kalafala , Jeffrey P. Soreff
发明人： Eric A. Foreman , Peter A. Habitz , David J. Hathaway , Jeffrey G. Hemmett , Kerim Kalafala , Jeffrey P. Soreff
IPC分类号： G06F17/50
CPC分类号： G06F17/5031 , G06F17/504 , G06F2217/84
摘要： A system and method for the adjustment of history based delay variation during static timing analysis of an integrated circuit design. The method may include obtaining information through sources of variability of history based components of delay variability, and a relationship between the sources of variability and one or more bounded device histories. Then, inputting history bounds for at least one signal of the integrated circuit design, and computing and propagating history bounds through at least one first segment of the integrated circuit design to at least one signal of the integrated circuit design. Further, the method may include evaluating from at least one of the propagated history bounds, device history bounds for at least one second segment of the integrated circuit design, and based on the evaluated device history bounds, adjusting at least one of a value of the history based delay variability and propagation of timing.
摘要翻译：一种用于在集成电路设计的静态时序分析期间调整基于历史的延迟变化的系统和方法。该方法可以包括通过延迟变异性的基于历史的组件的变异源获得信息，以及变异源与一个或多个有界设备历史之间的关系。然后，为集成电路设计的至少一个信号输入历史界限，并且通过集成电路设计的至少一个第一段将集成电路设计的至少一个信号计算和传播历史界限。此外，该方法可以包括从至少一个传播的历史界限评估集成电路设计的至少一个第二段的设备历史界限，以及基于所评估的设备历史界限，调整至少一个基于历史的延迟变异性和时间传播。

10. 发明授权

US07961932B2 Method and apparatus for manufacturing diamond shaped chips 有权
标题翻译：用于制造菱形芯片的方法和装置
公开(公告)号：US07961932B2
公开(公告)日：2011-06-14
申请号：US11865728
申请日：2007-10-01
申请人： Robert J. Allen , John M. Cohn , Scott W. Gould , Peter A. Habitz , Juergen Koehl , Gustavo E. Tellez , Ivan L. Wemple , Paul S. Zuchowski
发明人： Robert J. Allen , John M. Cohn , Scott W. Gould , Peter A. Habitz , Juergen Koehl , Gustavo E. Tellez , Ivan L. Wemple , Paul S. Zuchowski
IPC分类号： G06K9/00
CPC分类号： H01L27/0207
摘要： In a first aspect, an inventive apparatus for imaging a chip on a wafer includes a combined diamond chip image and kerf image having a plurality of sloped sides. The combined diamond chip image and kerf image includes a diamond chip image comprising a plurality of chip image rows that are parallel to at least one diagonal of the diamond chip image, and includes a kerf image adjacent to the diamond chip image. The kerf image comprises at least one kerf image row that is parallel to the at least one diagonal of the diamond chip image. The apparatus further includes a blocking material extending from the combined diamond chip image and kerf image to at least a periphery of an exposure field of a stepper. In a second aspect the imaging apparatus comprises an n-sided polygon-shaped combined chip image and kerf image. Also provided are inventive methods of manufacturing chips, and wafers manufactured in accordance with the inventive methods.
摘要翻译：在第一方面中，用于对晶片上的芯片进行成像的本发明的装置包括具有多个倾斜侧面的组合金刚石芯片图像和切口图像。组合的金刚石芯片图像和切口图像包括金刚石芯片图像，其包括与金刚石芯片图像的至少一个对角线平行的多个芯片图像行，并且包括与金刚石芯片图像相邻的切痕图像。切口图像包括平行于金刚石切片图像的至少一个对角线的至少一个切痕图像行。该装置还包括从组合的金刚石片图像和切痕图像延伸到步进器的曝光场的至少周边的阻挡材料。在第二方面，成像装置包括n侧多边形组合芯片图像和切口图像。还提供了制造芯片的创造性方法和根据本发明方法制造的晶片。

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