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    • 2. 发明授权
    • Methods for planarizing unevenness on surface of wafer photoresist layer and wafers produced by the methods
    • 通过该方法制造的晶片光致抗蚀剂层和晶片的表面上的平坦化不均匀的方法
    • US08071275B2
    • 2011-12-06
    • US12100716
    • 2008-04-10
    • David Laurier BernardPaul William DryerAndrew Lee McNees
    • David Laurier BernardPaul William DryerAndrew Lee McNees
    • G03F7/26
    • G03F7/094
    • A wafer has a substrate and a photoresist layer thereon with a surface that is planarized by positioning over a starting surface of the photoresist layer a gray-scale mask having a pattern that correlates with a gradient height profile of unevenness present on the starting surface, patterning the photoresist layer using the gray-scale mask to produce the pattern thereof in the photoresist layer which, in effect, produces a profile of evenness in the photoresist layer underlying the gradient height profile of unevenness, and developing the patterned photoresist layer such that only a three-dimensional portion thereof corresponding to the gradient height profile of unevenness located above the profile of evenness is removed which, in effect, leaves behind a resulting surface on the photoresist layer made substantially more even and thus substantially in a planarized condition.
    • 晶片具有基板及其上的光致抗蚀剂层,其表面通过在光致抗蚀剂层的起始表面上定位而形成平面化的灰度掩模,该灰度掩模具有与存在于起始表面上的不均匀性的梯度高度分布相关联的图案,图案化 使用灰度掩模的光致抗蚀剂层在光致抗蚀剂层中产生其图案,其实际上在凹凸的梯度高度分布下的光致抗蚀剂层中产生均匀度的轮廓,并且显影图案化的光致抗蚀剂层,使得只有 去除其对应于位于均匀轮廓之上的凹凸的梯度高度轮廓的三维部分,其实际上留在光致抗蚀剂层上形成的基本上更均匀且因此基本上处于平坦状态的所得表面之后。
    • 10. 发明申请
    • METHODS FOR PLANARIZING UNEVENNESS ON SURFACE OF WAFER PHOTORESIST LAYER AND WAFERS PRODUCED BY THE METHODS
    • 在方法生产的波长光电子层和波长表面上平坦化的方法
    • US20090258322A1
    • 2009-10-15
    • US12100716
    • 2008-04-10
    • David Laurier BernardPaul William DryerAndrew Lee McNees
    • David Laurier BernardPaul William DryerAndrew Lee McNees
    • G03F7/20
    • G03F7/094
    • A wafer has a substrate and a photoresist layer thereon with a surface that is planarized by positioning over a starting surface of the photoresist layer a gray-scale mask having a pattern that correlates with a gradient height profile of unevenness present on the starting surface, patterning the photoresist layer using the gray-scale mask to produce the pattern thereof in the photoresist layer which, in effect, produces a profile of evenness in the photoresist layer underlying the gradient height profile of unevenness, and developing the patterned photoresist layer such that only a three-dimensional portion thereof corresponding to the gradient height profile of unevenness located above the profile of evenness is removed which, in effect, leaves behind a resulting surface on the photoresist layer made substantially more even and thus substantially in a planarized condition.
    • 晶片具有基板及其上的光致抗蚀剂层,其表面通过在光致抗蚀剂层的起始表面上定位而形成平面化的灰度掩模,该灰度掩模具有与存在于起始表面上的不均匀性的梯度高度分布相关联的图案,图案化 使用灰度掩模的光致抗蚀剂层在光致抗蚀剂层中产生其图案,其实际上在凹凸的梯度高度分布下的光致抗蚀剂层中产生均匀度的轮廓,并且显影图案化的光致抗蚀剂层,使得只有 去除其对应于位于均匀轮廓之上的凹凸的梯度高度轮廓的三维部分,其实际上留在光致抗蚀剂层上形成的基本上更均匀且因此基本上处于平坦状态的所得表面之后。