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    • 3. 发明授权
    • New diode structure
    • 新二极管结构
    • US5164813A
    • 1992-11-17
    • US700107
    • 1991-05-08
    • Scott C. BlackstonePhilip L. HowerElizabeth M. RoughanChristopher H. DoucetteRoy LeeCarolyn Q. Cotnam
    • Scott C. BlackstonePhilip L. HowerElizabeth M. RoughanChristopher H. DoucetteRoy LeeCarolyn Q. Cotnam
    • H01L21/18H01L21/329H01L23/051H01L29/861
    • H01L29/66113H01L21/187H01L23/051H01L24/01H01L29/861H01L29/8613H01L2924/12035H01L2924/12036H01L2924/12042H01L2924/12043
    • A new diode structure is provided by bonding two semiconductor materials together having a low capacitance, a large contact area and mechanical ruggedness. The cross-sectional area of at least one of the semiconductor materials is reduced in the region of the bond resulting in a structure with either an hourglass or truncated hourglass-like cross-section. A diode PN junction is contained in the neighborhood of the area of reduced cross section. The diode so constructed provides a sufficient spacing between the unbonded semiconductor regions to reduce total packaged diode capacitance without introducing a spacer layer. The diode is processed to limit the area of the PN junction formed therein to the region of the bonding between the semiconductor materials, without limiting the metallized contact area, further controlling the diode capacitance as well as other electrical characteristics. The outer ends of the diode parallel to the bond, comprising typically P and N type semiconductor regions, are typically connected to metal leads which comprise the diode leads and the diode is packaged to form a mechanically and electrically stable low capacitance diode. This diode can be encapsulated such that no void or cavity exists within the interior of the structure without changing the diode construction process.
    • 通过将两个半导体材料结合在一起,具有低电容,大的接触面积和机械坚固性来提供新的二极管结构。 至少一种半导体材料的横截面面积在结合区域中减小,从而产生具有沙漏或截短的沙漏状横截面的结构。 二极管PN结包含在减小截面的区域附近。 如此构造的二极管在未连接的半导体区域之间提供足够的间隔,以减少总封装的二极管电容而不引入间隔层。 处理二极管以限制形成在其中的PN结的区域到半导体材料之间的接合区域,而不限制金属化接触面积,进一步控制二极管电容以及其它电特性。 平行于键合的二极管的外端,通常包括P型和N型半导体区,通常连接到包括二极管引线的金属引线,并且二极管被封装以形成机械和电气稳定的低电容二极管。 该二极管可以被封装成使得在结构内部不存在空隙或空腔而不改变二极管构造过程。