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    • 1. 发明授权
    • Method evaluating threshold level of a data cell in a memory device
    • 方法评估存储器件中数据单元的阈值水平
    • US07516037B2
    • 2009-04-07
    • US11755891
    • 2007-05-31
    • David John BaldwinEric BlackallJoseph DevoreRoss E. Teggatz
    • David John BaldwinEric BlackallJoseph DevoreRoss E. Teggatz
    • G06F15/00
    • G11C16/34
    • A method evaluating threshold of a data cell in a memory device including a programming locus coupled with the data cell for receiving a programming signal setting a stored signal level in the data cell and responding to a read signal to indicate the stored signal at a read locus; includes the steps of: (a) in no particular order; (1) selecting a test threshold signal; and (2) setting a read signal at a non-read level; (b) applying the test threshold signal to the programming locus; (c) cycling the read signal between a read level and a non-read level while applying the test threshold signal to the programming locus to present at least two test signals at the read locus when the read signal is at the read level; and (d) while cycling, observing whether the at least two test signals manifest a difference greater than a predetermined amount.
    • 一种评估存储器件中的数据单元的阈值的方法,包括与所述数据单元耦合的编程轨迹,用于接收在所述数据单元中设置存储的信号电平的编程信号,并且响应于读取信号以指示所读取的位置处存储的信号 ; 包括以下步骤:(a)没有特别的顺序; (1)选择测试阈值信号; 和(2)以非读取级别设置读取信号; (b)将测试阈值信号应用于编程轨迹; (c)在读取电平和非读取电平之间循环读取信号,同时当读取信号处于读取电平时,将测试阈值信号施加到编程轨迹,以在读取轨迹处呈现至少两个测试信号; 和(d)循环时,观察至少两个测试信号是否表现出大于预定量的差。
    • 3. 发明授权
    • Connection of active circuitry via wire bonding procedure
    • 通过接线方法连接有源电路
    • US5892283A
    • 1999-04-06
    • US991118
    • 1997-12-16
    • David John BaldwinRoss E. Teggatz
    • David John BaldwinRoss E. Teggatz
    • H01L21/66H01L21/60H01L23/485H01L23/58H01L23/48H01L23/52H01L29/40
    • H01L24/05H01L22/32H01L2224/05554H01L2224/05599H01L2224/05624H01L2224/05647H01L2224/05666H01L2224/05684H01L2924/01004H01L2924/01005H01L2924/01006H01L2924/01013H01L2924/01014H01L2924/01029H01L2924/05042H01L2924/12035H01L2924/14
    • A method of fabricating a bond and the bond. The process includes providing a lower level (M1,13, 15) of electrically conductive metal disposed on a substrate having a pair of spaced apart sections. An electrically insulating layer (11) is then disposed over the lower level and vias (23) are formed in the electrically insulating layer, individual ones of the vias extending to one of the spaced apart section of the lower level. An upper level of electrically conductive metal (M2, 17, 19) is disposed on the electrically insulating layer, the upper level having a pair of spaced apart sections, each coupled to one of the sections of the lower level through a via. One of the pair of spaced apart sections of the lower level is preferably essentially U-shaped (13) and the other section (15) of the lower level is essentially rectangular shaped and extends into the open end of the "U". One of the pair of spaced apart section of the upper level is essentially rectangular (17) with a rectangular aperture at its central region and the other section of the upper level (19) is essentially rectangular and disposed within the rectangular aperture. A bond (23) is formed completely enclosing the spaced apart sections of the upper level.
    • 一种制造键和键的方法。 该方法包括提供设置在具有一对间隔开的部分的基底上的较低级别的导电金属(M1,13,15)。 然后将电绝缘层(11)设置在下层上,并且通孔(23)形成在电绝缘层中,各个通孔延伸到下层的间隔开的部分之一。 导电金属(M2,17,19)的上层设置在电绝缘层上,上层具有一对间隔开的部分,每个部分通过通孔连接到下层的一个部分。 较低级别的一对间隔开的部分之一优选地基本上为U形(13),并且下层的另一部分(15)基本上为矩形并且延伸到“U”的开口端。 上层的一对间隔开的部分基本上是矩形(17),在其中心区域具有矩形孔,而上层(19)的另一部分基本上是矩形的并且设置在矩形孔内。 形成完全包围上层间隔开的部分的粘结(23)。
    • 4. 发明授权
    • Method evaluating threshold level of a data cell in a memory device
    • 方法评估存储器件中数据单元的阈值水平
    • US07269528B2
    • 2007-09-11
    • US11139172
    • 2005-05-28
    • David John BaldwinEric BlackallJoseph DevoreRoss E. Teggatz
    • David John BaldwinEric BlackallJoseph DevoreRoss E. Teggatz
    • G06F15/00
    • G11C16/34
    • A method evaluating threshold of a data cell in a memory device including a programming locus coupled with the data cell for receiving a programming signal setting a stored signal level in the data cell and responding to a read signal to indicate the stored signal at a read locus; includes the steps of: (a) in no particular order: (1) selecting a test threshold signal; and (2) setting a read signal at a non-read level; (b) applying the test threshold signal to the programming locus; (c) cycling the read signal between a read level and a non-read level while applying the test threshold signal to the programming locus to present at least two test signals at the read locus when the read signal is at the read level; and (d) while cycling, observing whether the at least two test signals manifest a difference greater than a predetermined amount.
    • 一种评估存储器件中的数据单元的阈值的方法,包括与所述数据单元耦合的编程轨迹,用于接收在所述数据单元中设置存储的信号电平的编程信号,并且响应于读取信号以指示所读取的位置处存储的信号 ; 包括以下步骤:(a)没有特定的顺序:(1)选择测试阈值信号; 和(2)以非读取级别设置读取信号; (b)将测试阈值信号应用于编程轨迹; (c)在读取电平和非读取电平之间循环读取信号,同时当读取信号处于读取电平时,将测试阈值信号施加到编程轨迹,以在读取轨迹处呈现至少两个测试信号; 和(d)循环时,观察至少两个测试信号是否表现出大于预定量的差。
    • 5. 发明授权
    • IC PMOS Schottky reverse bias protection structure
    • IC PMOS肖特基反向偏置保护结构
    • US06674621B2
    • 2004-01-06
    • US09989066
    • 2001-11-21
    • Alexander Noam TeutschZbigniew Jan LataDavid John BaldwinRoss E. Teggatz
    • Alexander Noam TeutschZbigniew Jan LataDavid John BaldwinRoss E. Teggatz
    • F21V704
    • H01L27/0255H02H11/003
    • The present invention relates to a reverse bias protection structure which comprises a PMOS transistor structure having a drain portion, a gate portion, a source portion and a backgate portion, wherein the gate portion is coupled to a first voltage potential, the source portion is selectively coupleable to a power supply, and the drain portion is selectively coupleable to a circuit needing power to be supplied thereto from the power supply. The reverse bias protection structure further comprises a Schottky diode structure having an anode coupled to the source portion of the PMOS transistor structure, and a cathode coupled to the backgate portion of the PMOS structure. Under forward bias conditions, the PMOS transistor conducts and exhibits a small voltage drop thereacross. Under reverse bias conditions, the PMOS transistor is off and the Schottky structure is reverse biased, thus preventing current through the protection structure.
    • 本发明涉及一种反偏置保护结构,其包括具有漏极部分,栅极部分,源极部分和后栅极部分的PMOS晶体管结构,其中栅极部分耦合到第一电压电位,源极部分选择性地 可与电源连接,并且漏极部分选择性地耦合到需要从电源供给的电力的电路。 反向偏置保护结构还包括具有耦合到PMOS晶体管结构的源极部分的阳极的肖特基二极管结构以及耦合到PMOS结构的背栅极部分的阴极。 在正向偏置条件下,PMOS晶体管导通并呈现出小的电压降。 在反向偏置条件下,PMOS晶体管截止,肖特基结构反向偏置,从而防止电流通过保护结构。
    • 10. 再颁专利
    • Preventing drain to body forward bias in a MOS transistor
    • 防止在MOS晶体管中排出体内正向偏置
    • USRE42494E1
    • 2011-06-28
    • US11800071
    • 2007-05-03
    • Ross E. Teggatz
    • Ross E. Teggatz
    • H03K5/003
    • H03K5/003
    • A voltage level shifting circuit (FIG. 4) has a plurality of PMOS transistors M1, M2, M3 connected in parallel for respectively driving a capacitive load CL with a selected different voltage level V1, V2 or V3. Transistors M1, M2, M3 are controlled so that one of them is placed in the ON condition, with the others in the OFF condition, to connect one of the voltages V1, V2 or V3 to charge the load CL. The largest voltage transistor M3 has its body connected to its source. The lower voltage transistors M1, M2 have their bodies respectively connected to switches S1, S2, which connect the bodies to the sources when the transistors are placed in the ON condition and connect the bodies to the highest voltage V3 when the transistors are placed in the OFF condition.
    • 电压电平移动电路(图4)具有并联连接的多个PMOS晶体管M1,M2,M3,分别驱动具有所选择的不同电压电平V1,V2或V3的电容性负载CL。 控制晶体管M1,M2,M3,使其中的一个被置于ON状态,其他的处于OFF状态,以连接电压V1,V2或V3中的一个来对负载CL充电。 最大的电压晶体管M3的主体连接到其源极。 低电压晶体管M1,M2的主体分别连接到开关S1,S2,开关S1,S2将晶体管置于ON状态时将主体连接到源极,并将晶体管放置在 OFF状态。