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1. 发明授权

US5668045A Process for stripping outer edge of BESOI wafers 失效
标题翻译：剥离BESOI晶圆外边缘的工艺
公开(公告)号：US5668045A
公开(公告)日：1997-09-16
申请号：US346695
申请日：1994-11-30
申请人： David I. Golland , Robert A. Craven , Ronald D. Bartram
发明人： David I. Golland , Robert A. Craven , Ronald D. Bartram
IPC分类号： H01L21/304 , H01L21/02 , H01L21/762 , H01L27/12 , H01L21/20 , H01L21/461
CPC分类号： H01L21/76251 , Y10S148/012 , Y10S148/135 , Y10S148/161 , Y10S438/977
摘要： A process for stripping the outer edge of a bonded BESOI wafer. The bonded BESOI wafer comprises a handle wafer, an oxide layer on one surface of the handle wafer, a device layer bonded to the oxide layer, and a p.sup.+ etch-stop layer on the device layer having an exposed face. The process comprises masking the exposed face of the p.sup.+ etch-stop layer, and abrading the periphery of the BESOI wafer to remove edge margins of the p.sup.+ etch-stop layer and device layer.
摘要翻译：剥离粘结的BESOI晶片的外边缘的方法。结合的BESOI晶片包括处理晶片，在处理晶片的一个表面上的氧化物层，结合到氧化物层的器件层，以及在具有暴露面的器件层上的p +蚀刻停止层。该方法包括掩蔽p +蚀刻停止层的暴露面，以及研磨BESOI晶片的周边以去除p +蚀刻停止层和器件层的边缘。

2. 发明授权

US5834812A Edge stripped BESOI wafer 失效
标题翻译：边缘剥离BESOI晶圆
公开(公告)号：US5834812A
公开(公告)日：1998-11-10
申请号：US820593
申请日：1997-03-19
申请人： David I. Golland , Robert A. Craven , Ronald D. Bartram
发明人： David I. Golland , Robert A. Craven , Ronald D. Bartram
IPC分类号： H01L21/304 , H01L21/02 , H01L21/762 , H01L27/12 , H01L21/20
CPC分类号： H01L21/76251 , Y10S148/012 , Y10S148/135 , Y10S148/161 , Y10S438/977
摘要： A process for stripping the outer edge of a bonded BESOI wafer. The bonded BESOI wafer comprises a handle wafer, an oxide layer on one surface of the handle wafer, a device layer bonded to the oxide layer, and a p.sup.+ etch-stop layer on the device layer having an exposed face. The process comprises masking the exposed face of the p.sup.+ etch-stop layer, and abrading the periphery of the BESOI wafer to remove edge margins of the p.sup.+ etch-stop layer and device layer.
摘要翻译：剥离粘结的BESOI晶片的外边缘的方法。结合的BESOI晶片包括处理晶片，在处理晶片的一个表面上的氧化物层，结合到氧化物层的器件层，以及在具有暴露面的器件层上的p +蚀刻停止层。该方法包括掩蔽p +蚀刻停止层的暴露面，以及研磨BESOI晶片的周边以去除p +蚀刻停止层和器件层的边缘。

3. 发明授权

US5816274A Apparartus for cleaning semiconductor wafers 失效
标题翻译： Apparartus用于清洁半导体晶圆
公开(公告)号：US5816274A
公开(公告)日：1998-10-06
申请号：US843632
申请日：1997-04-10
申请人： Ronald D. Bartram , Eugene R. Hollander
发明人： Ronald D. Bartram , Eugene R. Hollander
IPC分类号： B08B3/10 , B08B3/12 , H01L21/00 , B08B3/04
CPC分类号： H01L21/67057 , B08B3/10 , B08B3/12 , Y10S134/902
摘要： Apparatus for cleaning semiconductor wafers comprises a tank for containing a liquid wherein the liquid has an upper surface. A wafer holder holds the semiconductor wafer in the tank with at least a portion of the semiconductor wafer being immersed in the liquid within the tank. A wafer-moving mechanism is constructed for engaging the semiconductor wafer in the tank to rotate the semiconductor wafer and to reciprocate the semiconductor wafer so that at least a central region of the wafer repeatedly passes through the surface of the liquid. The wafer-moving mechanism comprises first and second surfaces engageable with the semiconductor wafer and rotatable about respective first and second axes of rotation for rotating the wafer.
摘要翻译：用于清洁半导体晶片的装置包括用于容纳液体的罐，其中液体具有上表面。晶片保持器将半导体晶片保持在槽中，其中半导体晶片的至少一部分浸入在罐内的液体中。晶片移动机构被构造用于将半导体晶片接合在槽中以旋转半导体晶片并使半导体晶片往复运动，使得晶片的至少中心区域反复通过液体的表面。晶片移动机构包括可与半导体晶片接合的第一和第二表面，并可围绕相应的第一和第二旋转轴线旋转以旋转晶片。

4. 发明授权

US5593505A Method for cleaning semiconductor wafers with sonic energy and passing through a gas-liquid-interface 失效
标题翻译：用声能清洗半导体晶片并通过气 - 液界面的方法
公开(公告)号：US5593505A
公开(公告)日：1997-01-14
申请号：US424904
申请日：1995-04-19
申请人： Henry F. Erk , Ronald D. Bartram , Eugene R. Hollander , Jing Chai
发明人： Henry F. Erk , Ronald D. Bartram , Eugene R. Hollander , Jing Chai
IPC分类号： H01L21/304 , B08B3/10 , B08B3/12 , H01L21/00 , H01L21/306
CPC分类号： H01L21/02052 , B08B3/10 , B08B3/12 , H01L21/67057 , Y10S134/902
摘要： A method of cleaning a semiconductor wafer comprises placing liquid in a bath with a gas-liquid-interface defined at the surface of the liquid. A semiconductor wafer is placed in the bath so that it is oriented in a generally upright position with at least part of the wafer being in the liquid and below the gas-liquid-interface. Sonic energy is directed through the liquid. At least one of the position of the semiconductor wafer and the level of liquid in the bath relative to the semiconductor wafer is varied so that the entire surface of the wafer repeatedly passes through the gas-liquid-interface.
摘要翻译：一种清洁半导体晶片的方法包括将液体放置在液体界面界定的液 - 液界面的浴中。将半导体晶片放置在浴中，使得其定向在大致直立的位置，其中晶片的至少一部分在液体中并在气液界面下方。声能被引导通过液体。改变半导体晶片的位置和相对于半导体晶片的液体液位中的至少一个，使得晶片的整个表面反复通过气 - 液界面。

5. 发明授权

US5626159A Apparatus for cleaning semiconductor wafers 失效
标题翻译：用于清洁半导体晶片的设备
公开(公告)号：US5626159A
公开(公告)日：1997-05-06
申请号：US686367
申请日：1996-07-25
申请人： Henry F. Erk , Ronald D. Bartram , Eugene R. Hollander , Jing Chai
发明人： Henry F. Erk , Ronald D. Bartram , Eugene R. Hollander , Jing Chai
IPC分类号： H01L21/304 , B08B3/10 , B08B3/12 , H01L21/00 , H01L21/306
CPC分类号： H01L21/02052 , B08B3/10 , B08B3/12 , H01L21/67057 , Y10S134/902
摘要： A method of cleaning a semiconductor wafer comprises placing liquid in a bath with a gas-liquid-interface defined at the surface of the liquid. A semiconductor wafer is placed in the bath so that it is oriented in a generally upright position with at least part of the wafer being in the liquid and below the gas-liquid-interface. Sonic energy is directed through the liquid. At least one of the position of the semiconductor wafer and the level of liquid in the bath relative to the semiconductor wafer is varied so that the entire surface of the wafer repeatedly passes through the gas-liquid-interface.
摘要翻译：一种清洁半导体晶片的方法包括将液体放置在液体界面界定的液 - 液界面的浴中。将半导体晶片放置在浴中，使得其定向在大致直立的位置，其中晶片的至少一部分在液体中并在气液界面下方。声能被引导通过液体。改变半导体晶片的位置和相对于半导体晶片的液体液位中的至少一个，使得晶片的整个表面反复通过气液界面。

6. 发明授权

US4008597A Method for shaping a slit product 失效
标题翻译：成形狭缝产品的方法
公开(公告)号：US4008597A
公开(公告)日：1977-02-22
申请号：US630462
申请日：1975-11-10
申请人： Ronald D. Bartram , Charles J. Runkle
发明人： Ronald D. Bartram , Charles J. Runkle
IPC分类号： B21B1/16 , B21B1/08 , B23D19/08 , B21B1/00
CPC分类号： B23D19/08 , B21B1/166
摘要： A method is disclosed for shaping the cross-section of a slit product. After slitting the slit product is characterized by a burr formation that is detrimental to the mechanical properties of the product and must be eliminated. The method comprises the steps of positioning in engaging relationship a pair of revolving rolls and feeding the slit product into the rolls at an angle of 7.degree.-30.degree. with the tangent plane of the rolls.
摘要翻译：公开了一种用于成形狭缝产品的横截面的方法。在切割狭缝产品之后，其特征在于对产品的机械性能有害的毛刺形成，并且必须被消除。该方法包括以啮合关系定位一对旋转辊并以7°-30°的角与辊的切平面将狭缝产品供给到辊中的步骤。

7. 发明授权

US4018073A Apparatus for shaping wire and ribbon structures obtained by slitting metallic coil stock 失效
标题翻译：通过切割金属线圈原料获得的用于成形线和带结构的装置
公开(公告)号：US4018073A
公开(公告)日：1977-04-19
申请号：US682412
申请日：1976-05-03
申请人： Ronald D. Bartram , Charles J. Runkle
发明人： Ronald D. Bartram , Charles J. Runkle
IPC分类号： B21D19/00 , B21B27/00 , B21B15/00
CPC分类号： B21D19/005
摘要： An apparatus is disclosed for shaping the cross-section of a metal wire or metal ribbon product obtained by slitting metallic coil stock into multiple lengths of wire with an aspect ratio of 1 or ribbon having an aspect ratio of 2 or more. The product obtained from the slitting procedure is marred by the presence of a burr which impairs mechanical properties and consequently must be eliminated. In previous practice, this was achieved by feeding the slit product through the nip of a pair of mating, shaping rolls having a fixed engagement. However, problems arise from run to run when the rolls are in fixed engagement. For example, variations in the thickness of the material being processed presents difficulties with a fixed engagement.In the disclosed apparatus engagement is allowed to vary while the engagement force is held constant. In brief, this is accomplished by mounting the shaping rolls on separate support members with one of the support members being movable to permit the roll engagement to vary. A constant engagement force is maintained by the provision of a means for applying a constant downward force on the movable roll support member.
摘要翻译：公开了一种用于对金属线或金属带产品的横截面进行成形，该金属线或金属带产品通过将金属线圈原料分切成长宽比为1或纵横比为2或更大的带的多根线。从切割程序获得的产品由于存在损坏机械性能的毛刺而被损坏，因此必须被消除。在以前的实践中，这是通过将狭缝产品通过具有固定接合的一对配对成形辊的辊隙进给而实现的。然而，当辊子处于固定接合状态时，运行中出现问题。例如，正在处理的材料的厚度的变化使得固定接合困难。

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