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1. 发明授权

US07956517B1 MEMS structure having a stress inverter temperature-compensated resonator member 有权
标题翻译：具有应力逆变器温度补偿谐振器构件的MEMS结构
公开(公告)号：US07956517B1
公开(公告)日：2011-06-07
申请号：US12204713
申请日：2008-09-04
申请人： Mehrnaz Motiee , Roger T. Howe , Emmanuel P. Quevy , David H. Bernstein
发明人： Mehrnaz Motiee , Roger T. Howe , Emmanuel P. Quevy , David H. Bernstein
IPC分类号： H01L23/34
CPC分类号： H03H3/0076 , B81B3/0072 , B81B2201/0271 , H03H9/02338 , H03H9/2431 , H03H9/2463 , H03H9/2473 , H03H2009/02496 , H03H2009/02503
摘要： A MEMS structure having a temperature-compensated resonator member is described. The MEMS structure comprises an asymmetric stress inverter member coupled with a substrate. A resonator member is housed in the asymmetric stress inverter member and is suspended above the substrate. The asymmetric stress inverter member is used to alter the thermal coefficient of frequency of the resonator member by inducing a stress on the resonator member in response to a change in temperature.
摘要翻译：描述了具有温度补偿谐振器元件的MEMS结构。 MEMS结构包括与衬底耦合的不对称应力逆变器部件。谐振器构件容纳在不对称应力逆变器构件中并悬置在衬底上。不对称应力逆变器构件用于通过响应于温度变化在谐振器构件上引起应力来改变谐振器构件的频率的热系数。

2. 发明授权

US07591201B1 MEMS structure having a compensated resonating member 有权
标题翻译：具有补偿谐振元件的MEMS结构
公开(公告)号：US07591201B1
公开(公告)日：2009-09-22
申请号：US11716285
申请日：2007-03-09
申请人： David H. Bernstein , Roger T. Howe , Emmanuel P. Quevy
发明人： David H. Bernstein , Roger T. Howe , Emmanuel P. Quevy
IPC分类号： F16H33/14
CPC分类号： H03H9/2457 , H03H3/0076 , H03H2009/02496 , Y10T74/11 , Y10T74/113
摘要： A MEMS structure having a compensated resonating member is described. In an embodiment, a MEMS structure comprises a resonating member coupled to a substrate by an anchor. A dynamic mass-load is coupled with the resonating member. The dynamic mass-load is provided for compensating a change in frequency of the resonating member by altering the moment of inertia of the resonating member by way of a positional change relative to the anchor.
摘要翻译：描述了具有补偿谐振元件的MEMS结构。在一个实施例中，MEMS结构包括通过锚固件耦合到衬底的谐振构件。动态质量负载与谐振构件耦合。提供动态质量负载，用于通过相对于锚的位置变化改变谐振构件的惯性矩来补偿谐振构件的频率变化。

3. 发明授权

US07514853B1 MEMS structure having a stress inverter temperature-compensated resonating member 有权
标题翻译： MEMS结构具有应力变换器温度补偿谐振元件
公开(公告)号：US07514853B1
公开(公告)日：2009-04-07
申请号：US11801774
申请日：2007-05-10
申请人： Roger T. Howe , Emmanuel P. Quevy , David H. Bernstein
发明人： Roger T. Howe , Emmanuel P. Quevy , David H. Bernstein
IPC分类号： H01L23/34
CPC分类号： B81B3/0072 , B81B2201/0271 , H03H3/0076 , H03H9/02338 , H03H9/2431 , H03H9/2463 , H03H9/2473 , H03H2009/02354 , H03H2009/02496 , H03H2009/02503
摘要： A MEMS structure having a temperature-compensated resonating member is described. The MEMS structure comprises a stress inverter member coupled with a substrate. A resonating member is housed in the stress inverter member and is suspended above the substrate. The MEMS stress inverter member is used to alter the thermal coefficient of frequency of the resonating member by inducing a stress on the resonating member in response to a change in temperature.
摘要翻译：描述具有温度补偿谐振元件的MEMS结构。 MEMS结构包括与基板耦合的应力逆变器部件。谐振构件容纳在应力反转构件中并悬浮在基板上。 MEMS应力逆变器部件用于通过响应于温度变化在谐振部件上引起应力来改变谐振部件的频率的热系数。

4. 发明授权

US08329559B2 Damascene process for use in fabricating semiconductor structures having micro/nano gaps 有权
标题翻译：用于制造具有微/纳米间隙的半导体结构的镶嵌工艺
公开(公告)号：US08329559B2
公开(公告)日：2012-12-11
申请号：US11737545
申请日：2007-04-19
申请人： Hideki Takeuchi , Emmanuel P. Quevy , Tsu-Jae King , Roger T. Howe
发明人： Hideki Takeuchi , Emmanuel P. Quevy , Tsu-Jae King , Roger T. Howe
IPC分类号： H01L21/46 , H01L21/78 , H01L21/301
CPC分类号： B81C1/00142 , B81B2201/0271 , B81C2201/0109 , Y10S438/933
摘要： In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrificial material to form at least one blade of sacrificial material, c) depositing a structural layer over the sacrificial layer, and d) removing the sacrificial layer including the blade of the sacrificial material with a narrow gap remaining in the structural layer where the blade of sacrificial material was removed.
摘要翻译：在制造微机电结构（MEMS）中，在MEMS中形成窄间隙的方法包括：a）在支撑衬底的表面上沉积牺牲材料层，b）光致抗蚀剂掩模并且至少部分蚀刻牺牲材料以形成至少一个牺牲材料刀片，c）在所述牺牲层上沉积结构层，以及d）去除包括所述牺牲材料刀片的所述牺牲层，其中所述牺牲材料刀片被去除的所述结构层中残留有窄间隙。

5. 发明授权

US08716815B2 MEMS coupler and method to form the same 有权
标题翻译： MEMS耦合器和方法形成相同
公开(公告)号：US08716815B2
公开(公告)日：2014-05-06
申请号：US12927312
申请日：2010-11-10
申请人： Emmanuel P. Quevy , Roger T. Howe
发明人： Emmanuel P. Quevy , Roger T. Howe
IPC分类号： H01L27/14
CPC分类号： B81C1/00039 , B81B2201/0271
摘要： A MEMS coupler and a method to form a MEMS structure having such a coupler are described. In an embodiment, a MEMS structure comprises a member and a substrate. A coupler extends through a portion of the member and connects the member with the substrate. The member is comprised of a first material and the coupler is comprised of a second material. In one embodiment, the first and second materials are substantially the same. In one embodiment, the second material is conductive and is different than the first material. In another embodiment, a method for fabricating a MEMS structure comprises first forming a member above a substrate. A coupler comprised of a conductive material is then formed to connect the member with the substrate.
摘要翻译：描述了MEMS耦合器和形成具有这种耦合器的MEMS结构的方法。在一个实施例中，MEMS结构包括构件和衬底。耦合器延伸穿过构件的一部分并将构件与衬底连接。该构件由第一材料构成，并且该耦合器由第二材料构成。在一个实施例中，第一和第二材料基本相同。在一个实施例中，第二材料是导电的并且不同于第一材料。在另一个实施例中，一种用于制造MEMS结构的方法包括首先在衬底上形成构件。然后形成由导电材料构成的耦合器，以将该构件与衬底连接。

6. 发明授权

US08288835B2 Microshells with integrated getter layer 有权
标题翻译：具有集成吸气剂层的微型壳
公开(公告)号：US08288835B2
公开(公告)日：2012-10-16
申请号：US13017844
申请日：2011-01-31
申请人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
发明人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
IPC分类号： H01L29/84
CPC分类号： B81C1/00293 , B81B7/02 , B81C1/00246 , B81C2203/0136 , B81C2203/0145 , B81C2203/0721 , B81C2203/0735 , B81C2203/0771
摘要： Microshells including a perforated pre-sealing layer and an integrated getter layer are provided. The integrated getter layer may be disposed between other layers of a perforated pre-sealing layer. The perforated pre-sealing layer may include at least one perforation, and a sealing layer may be provided on the pre-sealing layer to close the perforation.
摘要翻译：提供了包括穿孔预密封层和集成吸气剂层的微壳。集成的吸气剂层可以设置在穿孔预密封层的其它层之间。穿孔预密封层可以包括至少一个穿孔，并且可以在预密封层上设置密封层以封闭穿孔。

7. 发明授权

US08313970B2 Planar microshells for vacuum encapsulated devices and damascene method of manufacture 有权
标题翻译：用于真空封装装置的平面微壳和大马士革制造方法
公开(公告)号：US08313970B2
公开(公告)日：2012-11-20
申请号：US13017892
申请日：2011-01-31
申请人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
发明人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
IPC分类号： H01L21/00
CPC分类号： B81C1/00293 , B81B7/02 , B81C1/00246 , B81C2203/0136 , B81C2203/0145 , B81C2203/0721 , B81C2203/0735 , B81C2203/0771
摘要： Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell.
摘要翻译：用于MEMS和微电子等器件封装的低温多层平面微型壳体。微壳包括平面穿孔的预密封层，在其下面接近非平面牺牲层，以及密封层，用于在去除牺牲材料之后封闭预密封层中的穿孔。在一个实施例中，预密封层具有形成有镶嵌工艺的穿孔，以与微壳下方的腔室自对准。密封层可以包括非密封层，以物理地封闭穿孔，并且在非密封闭塞层上方具有密封层以密封穿孔。在特定实施例中，密封层是金属，其电耦合到与微壳相邻的导电层，以电微接地微壳。

8. 发明授权

US07736929B1 Thin film microshells incorporating a getter layer 失效
标题翻译：包含吸气剂层的薄膜微壳
公开(公告)号：US07736929B1
公开(公告)日：2010-06-15
申请号：US11716422
申请日：2007-03-09
申请人： Pezhman Monadgemi , Emmanuel P. Quevy , Roger T. Howe
发明人： Pezhman Monadgemi , Emmanuel P. Quevy , Roger T. Howe
IPC分类号： H01L21/00 , H01L21/461 , H01L21/50 , C23F1/00 , C25F3/00
CPC分类号： B81B7/0038 , B81C2203/0136 , B81C2203/0145
摘要： Low temperature, multi-layered microshells for encapsulation of devices such as MEMS and microelectronics. The microshells may include a perforated pre-sealing layer, below which a sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. The pre-sealing layer includes a large surface area getter layer to remove contaminants from the space ultimately enclosed by the microshell to improve the pressure control and cleanliness of the microshell.
摘要翻译：用于封装MEMS和微电子等器件的低温多层微型壳体。微壳可以包括穿孔的预密封层，在其下方存取牺牲层，以及密封层，用于在去除牺牲材料之后封闭预密封层中的穿孔。预密封层包括大的表面积吸气剂层，以从最终由微壳包围的空间去除污染物，以改善微壳的压力控制和清洁度。

9. 发明授权

US08273594B2 Planar microshells for vacuum encapsulated devices and damascene method of manufacture 有权
公开(公告)号：US08273594B2
公开(公告)日：2012-09-25
申请号：US13017767
申请日：2011-01-31
申请人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
发明人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
IPC分类号： H01L21/00
CPC分类号： B81C1/00293 , B81B7/02 , B81C1/00246 , B81C2203/0136 , B81C2203/0145 , B81C2203/0721 , B81C2203/0735 , B81C2203/0771
摘要： Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell.

10. 发明申请

US20110121416A1 PLANAR MICROSHELLS FOR VACUUM ENCAPSULATED DEVICES AND DAMASCENE METHOD OF MANUFACTURE 有权
标题翻译：用于真空封装装置的平面微阵列和制造方法
公开(公告)号：US20110121416A1
公开(公告)日：2011-05-26
申请号：US13017892
申请日：2011-01-31
申请人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
发明人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
IPC分类号： H01L29/84 , H01L21/04
CPC分类号： B81C1/00293 , B81B7/02 , B81C1/00246 , B81C2203/0136 , B81C2203/0145 , B81C2203/0721 , B81C2203/0735 , B81C2203/0771
摘要： Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell.
摘要翻译：用于MEMS和微电子等器件封装的低温多层平面微型壳体。微壳包括平面穿孔的预密封层，在其下面接近非平面牺牲层，以及密封层，用于在去除牺牲材料之后封闭预密封层中的穿孔。在一个实施例中，预密封层具有形成有镶嵌工艺的穿孔，以与微壳下方的腔室自对准。密封层可以包括非密封层，以物理地封闭穿孔，并且在非密封闭塞层上方具有密封层以密封穿孔。在特定实施例中，密封层是金属，其电耦合到与微壳相邻的导电层，以电微接地微壳。

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