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1. 发明申请

US20070057270A1 GaN laser with refractory metal ELOG masks for intracavity contact 失效
$GaN laser with refractory metal ELOG masks for intracavity contact$
标题翻译：具有难熔金属的GaN激光器用于腔内接触的ELOG掩模
公开(公告)号：US20070057270A1
公开(公告)日：2007-03-15
申请号：US11223622
申请日：2005-09-09
申请人： David Bour , Scott Corzine
发明人： David Bour , Scott Corzine
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0425 , H01S5/18308 , H01S5/1833 , H01S5/18341 , H01S5/18369 , H01S5/2009 , H01S5/22 , H01S2304/12
摘要： Refractory metal ELOG mask are used for GaN based VCSELs and edge emitter structures to serve as intracavity contacts. In these structures the refractory metal ELOG masks serve both as ohmic contact metals as well as masks for ELOG.
摘要翻译：耐火金属ELOG掩模用于GaN基VCSEL和边缘发射器结构，用作腔内接触。在这些结构中，难熔金属ELOG掩模既用作欧姆接触金属，也用作ELOG的掩模。

2. 发明申请

US20070019697A1 VCSEL system with transverse P/N junction 失效
标题翻译：具有横向P / N结的VCSEL系统
公开(公告)号：US20070019697A1
公开(公告)日：2007-01-25
申请号：US11187477
申请日：2005-07-22
申请人： Jeffrey Miller , Scott Corzine , David Bour
发明人： Jeffrey Miller , Scott Corzine , David Bour
IPC分类号： H01S5/00 , H01S3/04
CPC分类号： B82Y20/00 , H01S5/0424 , H01S5/0425 , H01S5/18341 , H01S5/18369 , H01S5/18383 , H01S5/2203 , H01S5/341 , H01S5/3428 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a VCSEL system comprising forming a first mirror, forming a vertical cavity on the first mirror, the vertical cavity including integrated multiple gain regions and forming a transverse p/n junction laterally to the integrated multiple gain regions, wherein forward biasing the transverse p/n junction causes photon emission in the integrated multiple gain regions.
摘要翻译：本发明提供了一种VCSEL系统，包括形成第一反射镜，在第一反射镜上形成垂直空腔，垂直空腔包括集成的多增益区域，并横向形成横向p / n接合到集成的多增益区域，其中向前偏置横向p / n结在整合的多增益区域中引起光子发射。

3. 发明申请

US20070030870A1 Method and structure for ridge waveguide quantum cascade laser with p-type overgrowth 审中-公开
标题翻译：具有p型过度生长的脊波导量子级联激光器的方法和结构
公开(公告)号：US20070030870A1
公开(公告)日：2007-02-08
申请号：US11191773
申请日：2005-07-27
申请人： David Bour , Scott Corzine
发明人： David Bour , Scott Corzine
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0655 , H01S5/2226 , H01S5/305 , H01S5/3054 , H01S5/3211 , H01S5/3422
摘要： The performance characteristics of ridge waveguide QCL may be improved in accordance with the invention by replacing the insulating dielectric layers such as SiO2, Si3N4 or SiC with p-type InP overgrowth layers as well as p-type AlInAs or InGaAsP overgrowth layers, for example.
摘要翻译：根据本发明，脊波导QCL的性能特征可以通过将绝缘电介质层替换为诸如SiO 2，Si 3 N 4 N / 或具有p型InP过度生长层的SiC，以及例如p型AlInAs或InGaAsP过度生长层。

4. 发明申请

US20060203865A1 Buried heterostructure quantum cascade laser 失效
标题翻译：埋入异质结量子级联激光器
公开(公告)号：US20060203865A1
公开(公告)日：2006-09-14
申请号：US11076599
申请日：2005-03-09
申请人： David Bour , Scott Corzine
发明人： David Bour , Scott Corzine
IPC分类号： H01S5/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/2226 , H01S5/3402
摘要： A buried heterostructure quantum cascade laser structure uses reverse biased junction to achieve current blocking. Doping and ridge width of the structure may be adjusted to provide effective mode discrimination.
摘要翻译：掩埋异质结量子级联激光器结构使用反向偏置结实现电流阻塞。可以调整结构的掺杂和脊宽以提供有效的模式鉴别。

5. 发明申请

US20050276557A1 Buried heterostructure device having integrated waveguide grating fabricated by single step MOCVD 失效
标题翻译：具有通过单步MOCVD制造的集成波导光栅的埋入异质结构器件
公开(公告)号：US20050276557A1
公开(公告)日：2005-12-15
申请号：US11154034
申请日：2005-06-16
申请人： David Bour , Scott Corzine
发明人： David Bour , Scott Corzine
IPC分类号： G02B6/10 , G02B6/13 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/32 , H01S5/343
CPC分类号： H01S5/12 , B82Y20/00 , G02B6/131 , H01S5/1231 , H01S5/1237 , H01S5/2004 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/227 , H01S5/3211 , H01S5/34313 , H01S5/34366 , H01S2301/173 , H01S2304/04
摘要： The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window having a periodic grating profile. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.
摘要翻译：该器件是包括生长表面，生长掩模，光波导核心台面和包层的光电器件或透明波导器件。生长掩模位于半导体表面上并且限定具有周期性光栅轮廓的细长生长窗口。光波导核心台面位于生长窗口中，具有梯形横截面形状。包覆层覆盖光波导芯体台面并在生长掩模的至少一部分上延伸。这样的器件通过提供包括生长表面的晶片来制造，通过在第一生长温度下的微选择性区域生长在生长表面上生长光波导核心台面并且在第二生长温度下覆盖包含材料的光波导芯台面，低于第一生长温度。

6. 发明申请

US20070041419A1 Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth 失效
标题翻译：具有通过外延层过度生长制造的环形激光器的半导体系统
公开(公告)号：US20070041419A1
公开(公告)日：2007-02-22
申请号：US11209994
申请日：2005-08-22
申请人： Michael Tan , Scott Corzine , David Bour
发明人： Michael Tan , Scott Corzine , David Bour
IPC分类号： H01S3/083
CPC分类号： B82Y20/00 , H01S5/0424 , H01S5/1071 , H01S5/12 , H01S5/2077 , H01S5/2272 , H01S5/34 , H01S5/3428 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.
摘要翻译：本发明提供了一种环形激光系统，其包括通过外延层在中间层上过度生长形成光学核心，形成与光学核心相邻的多量子阱并形成进一步包括全部内部反射器的外部结构，其中在内部形成光子多量子阱还包括在包括外部结构，多量子阱和光学核心的环形激光器结构内循环光子。

7. 发明申请

US20060262243A1 Display system and method using a solid state laser 审中-公开
标题翻译：显示系统和使用固态激光的方法
公开(公告)号：US20060262243A1
公开(公告)日：2006-11-23
申请号：US11132943
申请日：2005-05-19
申请人： Steven Lester , David Bour , Scott Corzine
发明人： Steven Lester , David Bour , Scott Corzine
IPC分类号： G02F1/1335
CPC分类号： G02F2/02 , G02B26/101 , G09G3/02 , G09G3/3406 , G09G3/342 , G09G3/3611 , G09G2310/0224 , H04N9/3129 , H04N9/3141
摘要： A display system in accordance with the present invention includes a display screen having a phosphor that emits light in a wavelength range from about 450 nm to about 650 nm when excited by a laser beam. The laser beam is generated by a solid-state laser having an operating wavelength range from about 330 nm to about 440 nm.
摘要翻译：根据本发明的显示系统包括具有荧光体的显示屏，该荧光体当被激光束激发时发射在约450nm至约650nm的波长范围内的光。激光束由具有约330nm至约440nm的工作波长范围的固态激光器产生。

8. 发明申请

US20070091951A1 Gain-coupled distributed quantum cascade laser 失效
标题翻译：增益耦合分布式量子级联激光器
公开(公告)号：US20070091951A1
公开(公告)日：2007-04-26
申请号：US11246745
申请日：2005-10-07
申请人： David Bour , Scott Corzine
发明人： David Bour , Scott Corzine
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , B82Y20/00 , H01S5/06213 , H01S5/1228 , H01S5/2004 , H01S5/3211 , H01S5/3422 , H01S5/34306
摘要： Purely gain-coupled diffraction gratings may be realized for use in QCLs and other edge emitting lasers that lack a typical p-n junction. The periodic, typically heavily n-doped regions of doped diffraction gratings are replaced with p-type regions having significantly lower doping.
摘要翻译：可以实现纯增益耦合衍射光栅用于QCL和其他缺少典型p-n结的边缘发射激光器。掺杂衍射光栅的周期性，典型地高n掺杂区域被具有显着更低掺杂的p型区域代替。

9. 发明申请

US20070036186A1 Nitride semiconductor vertical cavity surface emitting laser 失效
标题翻译：氮化物半导体垂直腔表面发射激光器
公开(公告)号：US20070036186A1
公开(公告)日：2007-02-15
申请号：US11203699
申请日：2005-08-15
申请人： Scott Corzine , David Bour
发明人： Scott Corzine , David Bour
IPC分类号： H01S5/00
CPC分类号： H01S5/0424 , B82Y20/00 , H01S5/18341 , H01S5/18369 , H01S5/18383 , H01S5/20 , H01S5/34333 , H01S2304/12
摘要： In one aspect, a VCSEL includes a base region that has a vertical growth part laterally adjacent a first optical reflector and a lateral growth part that includes nitride semiconductor material vertically over at least a portion of the first optical reflector. An active region has at least one nitride semiconductor quantum well vertically over at least a portion of the lateral growth part of the base region and includes a first dopant of a first electrical conductivity type. A contact region includes a nitride semiconductor material laterally adjacent the active region and a second dopant of a second electrical conductivity type opposite the first electrical conductivity type. A second optical reflector is vertically over the active region and forms with the first optical reflector a vertical optical cavity overlapping at least a portion of the at least one quantum well of the active region. A method of fabricating a VCSEL also is described.
摘要翻译：在一个方面，VCSEL包括具有垂直生长部分的横向邻近于第一光学反射器的基底区域和在第一光学反射体的至少一部分上方垂直包括氮化物半导体材料的横向生长部分。有源区域在基极区域的横向生长部分的至少一部分上垂直地具有至少一个氮化物半导体量子阱，并且包括第一导电类型的第一掺杂物。接触区域包括横向邻近有源区的氮化物半导体材料和与第一导电类型相反的第二导电类型的第二掺杂剂。第二光学反射器垂直于有源区域并且与第一光学反射器形成垂直的光学腔，其与有源区的至少一个量子阱的至少一部分重叠。还描述了制造VCSEL的方法。

10. 发明申请

US20060284163A1 Single ELOG growth transverse p-n junction nitride semiconductor laser 审中-公开
标题翻译：单个ELOG生长横向p-n结氮化物半导体激光器
公开(公告)号：US20060284163A1
公开(公告)日：2006-12-21
申请号：US11154010
申请日：2005-06-15
申请人： David Bour , Scott Corzine
发明人： David Bour , Scott Corzine
IPC分类号： H01L31/00
CPC分类号： H01S5/0424 , B82Y20/00 , H01S5/0213 , H01S5/0425 , H01S5/18308 , H01S5/18369 , H01S5/30 , H01S5/3202 , H01S5/34 , H01S5/34333 , H01S2304/12
摘要： A vertical quantum well nitride laser-can be fabricated by ELOG (epitaxial lateral overgrowth), with the vertical quantum wells created by deposition over the vertical a-face of the laterally growing edges and forming the transverse junction in a single ELOG-MOCVD (metal organic chemical vapor deposition) growth step. Vertical quantum wells may be used for both GaN vertical cavity surface emitting lasers (VCSELs) and GaN edge emitting lasers.
摘要翻译：垂直量子阱氮化物激光器可以通过ELOG（外延横向过度生长）制造，垂直量子阱通过沉积在横向生长边缘的垂直面上而形成，并在单个ELOG-MOCVD（金属有机化学气相沉积）生长步骤。垂直量子阱可用于GaN垂直腔表面发射激光器（VCSEL）和GaN边缘发射激光器。

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