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1. 发明申请

US20060279828A1 Deep quantum well electro-absorption modulator 失效
标题翻译：深量子阱电吸收调制器
公开(公告)号：US20060279828A1
公开(公告)日：2006-12-14
申请号：US11148467
申请日：2005-06-08
申请人： David Bour , Ashish Tandon , Michael Tan
发明人： David Bour , Ashish Tandon , Michael Tan
IPC分类号： G02F1/03
CPC分类号： B82Y20/00 , G02F1/017 , G02F1/01725 , G02F2001/01766 , G02F2202/101 , G02F2202/102
摘要： Double well structures in electro-absorption modulators are created in quantum well active regions by embedding deep ultra thin quantum wells. The perturbation introduced by the embedded, deep ultra thin quantum well centered within a conventional quantum well lowers the confined energy state for the wavefunction in the surrounding larger well and typically results in the hole and electron distributions being more confined to the center of the conventional quantum well. The extinction ratio provided by the electro-absorption modulator is typically increased.
摘要翻译：电子吸收调制器中的双阱结构通过嵌入深超薄量子阱在量子阱活性区域中产生。以常规量子阱为中心的嵌入式，超超薄量子阱引入的扰动降低了周围较大阱中波函数的约束能态，并且通常导致空穴和电子分布更局限于常规量子的中心好。电吸收调制器提供的消光比通常增加。

2. 发明申请

US20060083278A1 Method and structure for deep well structures for long wavelength active regions 失效
标题翻译：长波长活性区深井结构的方法和结构
公开(公告)号：US20060083278A1
公开(公告)日：2006-04-20
申请号：US10970528
申请日：2004-10-20
申请人： Michael Tan , Ashish Tandon , David Bour
发明人： Michael Tan , Ashish Tandon , David Bour
IPC分类号： H01S5/00
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/06 , H01S5/183 , H01S5/3408 , H01S5/34313 , H01S5/34333
摘要： Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs, InGaAsSb, InP and GaN material systems, for example.
摘要翻译：子阱被添加到发光半导体结构的量子阱中，以将其发射波长移动到更长的波长。本发明的典型应用是例如InGaAs，InGaAsSb，InP和GaN材料体系。

3. 发明申请

US20070241322A1 Long Wavelength Induim Arsenide Phosphide (InAsP) Quantum Well Active Region And Method For Producing Same 审中-公开
标题翻译：长波长砷化磷（InAsP）量子阱活性区及其生产方法
公开(公告)号：US20070241322A1
公开(公告)日：2007-10-18
申请号：US11765644
申请日：2007-06-20
申请人： David Bour , Michael Tan , William Perez
发明人： David Bour , Michael Tan , William Perez
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L33/0062 , H01S5/3434
摘要： An InAsP active region for a long wavelength light emitting device and a method for growing the same are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium arsenide phosphide (InAsP) film, forming a quantum well layer of InAsP, and forming a barrier layer adjacent the quantum well layer, where the quantum well layer and the barrier layer are formed at a temperature of less than 520 degrees C. Forming the quantum well layer and the barrier layer at a temperature of less than 520 degrees C. results in fewer dislocations by suppressing relaxation of the layers. A long wavelength active region including InAsP quantum well layers and InGaP barrier layers is also disclosed.
摘要翻译：公开了一种用于长波长发光器件的InAsP有源区及其生长方法。在一个实施方案中，该方法包括将衬底放置在有机金属气相外延（OMVPE）反应器中，该衬底用于支持砷化铟磷（InAsP）膜的生长，形成InAsP的量子阱层，并形成相邻的势垒层量子阱层，其中在低于520℃的温度下形成量子阱层和势垒层。在低于520℃的温度下形成量子阱层和阻挡层，导致较少的位错抑制层的松弛。还公开了包括InAsP量子阱层和InGaP阻挡层的长波长有源区。

4. 发明申请

US20050169582A1 Optical isolator utilizing a micro-resonator 失效
标题翻译：光隔离器利用微谐振器
公开(公告)号：US20050169582A1
公开(公告)日：2005-08-04
申请号：US10768858
申请日：2004-01-29
申请人： Michael Tan , William Trutna , David Bour , Michael Leary
发明人： Michael Tan , William Trutna , David Bour , Michael Leary
IPC分类号： G02F1/09 , G02B6/26 , G02B6/34 , G02B27/28 , G02F1/095 , H04B10/00
CPC分类号： G02B6/29335 , G02B6/12007 , G02B6/2746 , G02B2006/12097 , G02B2006/12104 , G02F1/0955 , G02F2203/15
摘要： An optical isolator for coupling light from a first waveguide to a second waveguide is disclosed. The optical isolator utilizes a resonator coupled to the first and second optical waveguides. The resonator has a resonance at λ for light traveling from the first optical waveguide to the second optical waveguide; however, the resonator does not have a resonance at λ for light traveling from the second waveguide to the first waveguide. The resonator can use a layer of ferromagnetic material in an applied magnetic field. The magnetic field within the ferromagnetic material varies in strength and/or direction over the layer of ferromagnetic material. The magnetic field can be generated by an external magnetic field that varies over the layer of ferromagnetic material. Alternatively, the resonator can include a layer of ferromagnetic metal that overlies a portion of the layer of ferromagnetic material and a constant external magnetic field.
摘要翻译：公开了一种用于将来自第一波导的光耦合到第二波导的光隔离器。光隔离器利用耦合到第一和第二光波导的谐振器。谐振器对于从第一光波导到第二光波导的光的λ具有谐振; 然而，对于从第二波导传播到第一波导的光，谐振器在λ处不具有谐振。谐振器可以在施加的磁场中使用铁磁材料层。铁磁材料内的磁场在铁磁材料层上的强度和/或方向上变化。磁场可以由在铁磁材料层上变化的外部磁场产生。或者，谐振器可以包括铁磁金属层，其覆盖铁磁材料层的一部分和恒定的外部磁场。

5. 发明申请

US20070041419A1 Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth 失效
标题翻译：具有通过外延层过度生长制造的环形激光器的半导体系统
公开(公告)号：US20070041419A1
公开(公告)日：2007-02-22
申请号：US11209994
申请日：2005-08-22
申请人： Michael Tan , Scott Corzine , David Bour
发明人： Michael Tan , Scott Corzine , David Bour
IPC分类号： H01S3/083
CPC分类号： B82Y20/00 , H01S5/0424 , H01S5/1071 , H01S5/12 , H01S5/2077 , H01S5/2272 , H01S5/34 , H01S5/3428 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.
摘要翻译：本发明提供了一种环形激光系统，其包括通过外延层在中间层上过度生长形成光学核心，形成与光学核心相邻的多量子阱并形成进一步包括全部内部反射器的外部结构，其中在内部形成光子多量子阱还包括在包括外部结构，多量子阱和光学核心的环形激光器结构内循环光子。

6. 发明授权

US07180923B2 Laser employing a zinc-doped tunnel-junction 有权
标题翻译：激光采用锌掺杂隧道结
公开(公告)号：US07180923B2
公开(公告)日：2007-02-20
申请号：US10367200
申请日：2003-02-13
申请人： David Bour , Chaokun Lin , Michael Tan , Bill Perez
发明人： David Bour , Chaokun Lin , Michael Tan , Bill Perez
IPC分类号： H01S5/00
CPC分类号： H01S5/18358 , H01S5/0421 , H01S5/305 , H01S5/3054 , H01S5/3072 , H01S5/3095 , H01S5/3235
摘要： An improved tunnel junction structure and a VCSEL that uses this structure is disclosed. The tunnel junction includes first, second, and third layers that include materials of the InP family of materials. The first layer is doped with n-type dopant species to a concentration of 1019 dopant atoms per cm3 or greater. The second layer is doped with Zn to a similar concentration and is in contact with the first layer. The interface between the first and second layers forms a tunnel junction. The third layer includes a material that retards the diffusion of Zn out of the second layer. The third layer preferably includes undoped AlInAs. The tunnel junction structure of the present invention can be utilized in a VCSEL having an active layer between first and second mirrors that are both constructed from n-type semiconductor layers.
摘要翻译：公开了一种改进的隧道结结构和使用该结构的VCSEL。隧道结包括第一层，第二层和第三层，包括InP材料系列的材料。第一层掺杂有n型掺杂剂物质，浓度为每厘米3或更大的10 19掺杂剂原子。第二层掺杂有类似浓度的Zn并与第一层接触。第一和第二层之间的界面形成隧道结。第三层包括阻止Zn扩散到第二层的材料。第三层优选包括未掺杂的AlInAs。本发明的隧道结结构可以用于具有由n型半导体层构成的第一和第二反射镜之间的有源层的VCSEL。

7. 发明授权

US08927999B2 Edge termination by ion implantation in GaN 有权
标题翻译：通过离子注入在GaN中的边缘终止
公开(公告)号：US08927999B2
公开(公告)日：2015-01-06
申请号：US13301165
申请日：2011-11-21
申请人： Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , Linda Romano , David Bour , Richard J. Brown , Thomas R. Prunty
发明人： Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , Linda Romano , David Bour , Richard J. Brown , Thomas R. Prunty
IPC分类号： H01L29/20 , H01L21/265 , H01L29/66 , H01L29/808 , H01L29/868 , H01L29/872 , H01L29/06
CPC分类号： H01L21/2654 , H01L29/0619 , H01L29/0642 , H01L29/2003 , H01L29/66143 , H01L29/6631 , H01L29/66446 , H01L29/66856 , H01L29/8083 , H01L29/868 , H01L29/872
摘要： An edge terminated semiconductor device is described including a GaN substrate; a doped GaN epitaxial layer grown on the GaN substrate including an ion-implanted insulation region, wherein the ion-implanted region has a resistivity that is at least 90% of maximum resistivity and a conductive layer, such as a Schottky metal layer, disposed over the GaN epitaxial layer, wherein the conductive layer overlaps a portion of the ion-implanted region. A Schottky diode is prepared using the Schottky contact structure.
摘要翻译：描述了边缘端接的半导体器件，其包括GaN衬底; 在包括离子注入绝缘区域的GaN衬底上生长的掺杂GaN外延层，其中所述离子注入区域具有至少为最大电阻率的90％的电阻率和诸如肖特金属层的导电层设置在所述GaN外延层，其中所述导电层与所述离子注入区域的一部分重叠。使用肖特基接触结构制备肖特基二极管。

8. 发明授权

US08910644B2 Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas 有权
标题翻译：用于引起处理室清洁气体的紊流的方法和装置
公开(公告)号：US08910644B2
公开(公告)日：2014-12-16
申请号：US13041230
申请日：2011-03-04
申请人： Hua Chung , Xizi Dong , Kyawwin Jason Maung , Hiroji Hanawa , Sang Won Kang , David H. Quach , Donald J. K. Olgado , David Bour , Wei-Yung Hsu , Alexander Tam , Anzhong Chang , Sumedh Acharya
发明人： Hua Chung , Xizi Dong , Kyawwin Jason Maung , Hiroji Hanawa , Sang Won Kang , David H. Quach , Donald J. K. Olgado , David Bour , Wei-Yung Hsu , Alexander Tam , Anzhong Chang , Sumedh Acharya
IPC分类号： B08B3/02 , B08B5/00 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/67
CPC分类号： B08B5/00 , C23C16/4405 , C23C16/45506 , C23C16/45591 , H01L21/02041 , H01L21/67115 , Y10S438/905
摘要： Embodiments of the invention generally relate to apparatus and methods for cleaning chamber components using a cleaning plate. The cleaning plate is adapted to be positioned on a substrate support during a cleaning process, and includes a plurality of turbulence-inducing structures. The turbulence-inducing structures induce a turbulent flow of cleaning gas while the cleaning plate is rotated during a cleaning process. The cleaning plate increases the retention time of the cleaning gas near the showerhead during cleaning. Additionally, the cleaning plate reduces concentration gradients within the cleaning plate to provide a more effective clean. The method includes positioning a cleaning plate adjacent to a showerhead, and introducing cleaning gas to the space between the showerhead and the cleaning plate. A material deposited on the surface of the showerhead is then heated and vaporized in the presence of the cleaning gas, and then exhausted from the processing chamber.
摘要翻译：本发明的实施例一般涉及使用清洁板清洁腔室部件的设备和方法。清洁板适于在清洁过程期间定位在基板支撑件上，并且包括多个湍流诱导结构。湍流诱导结构在清洁过程中清洁板旋转时引起清洁气体的湍流。在清洁过程中，清洁板增加了喷头附近清洁气体的停留时间。此外，清洁板减少清洁板内的浓度梯度以提供更有效的清洁。该方法包括将清洁板定位在与喷头相邻的位置，并将清洁气体引入到喷头和清洁板之间的空间。然后将沉积在喷头表面上的材料在清洁气体的存在下加热和蒸发，然后从处理室中排出。

9. 外观设计

USD664170S1 Cleaning plate for inducing turbulent flow of a processing chamber cleaning glass 有权
标题翻译：用于引起处理室清洁玻璃的湍流的清洁板
公开(公告)号：USD664170S1
公开(公告)日：2012-07-24
申请号：US29386850
申请日：2011-03-04
申请人： Hua Chung , Xizi Dong , Kyawwin Jason Maung , Hiroji Hanawa , Sang Won Kang , David H. Quach , Donald J. K. Olgado , David Bour , Wei-Yung Hsu , Alexander Tam , Anzhong Chang , Sumedh Acharya
设计人： Hua Chung , Xizi Dong , Kyawwin Jason Maung , Hiroji Hanawa , Sang Won Kang , David H. Quach , Donald J. K. Olgado , David Bour , Wei-Yung Hsu , Alexander Tam , Anzhong Chang , Sumedh Acharya

10. 发明申请

US20120052216A1 GAS DISTRIBUTION SHOWERHEAD WITH HIGH EMISSIVITY SURFACE 审中-公开
标题翻译：具有高功率表面的气体分配淋浴
公开(公告)号：US20120052216A1
公开(公告)日：2012-03-01
申请号：US13154060
申请日：2011-06-06
申请人： Hiroji Hanawa , Kyawwin Jason Maung , Hua Chung , Jie Cui , David Bour , Wei-Yung Hsu , Liang-Yuh Chen
发明人： Hiroji Hanawa , Kyawwin Jason Maung , Hua Chung , Jie Cui , David Bour , Wei-Yung Hsu , Liang-Yuh Chen
IPC分类号： C23C16/48
CPC分类号： C23C16/45565 , C23C16/45574 , C23C16/481 , C23C16/52
摘要： Embodiments of the present invention provide methods and apparatus for surface coatings applied to process chamber components utilized in chemical vapor deposition processes. In one embodiment, the apparatus provides a showerhead apparatus comprising a body, a plurality of conduits extending through the body, each of the plurality of conduits having an opening extending to a processing surface of the body, and a coating disposed on the processing surface, the coating being about 50 microns to about 200 microns thick and comprising a coefficient of emissivity of about 0.8, an average surface roughness of about 180 micro-inches to about 220 micro-inches, and a porosity of about 15% or less.
摘要翻译：本发明的实施例提供了应用于化学气相沉积工艺中使用的处理腔室部件的表面涂层的方法和装置。在一个实施例中，该装置提供一种喷头装置，其包括主体，延伸穿过主体的多个导管，多个导管中的每一个具有延伸到主体的处理表面的开口，以及设置在处理表面上的涂层，该涂层为约50微米至约200微米厚，并且包括约0.8的发射率系数，约180微英寸至约220微英寸的平均表面粗糙度，以及约15％或更小的孔隙率。

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