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1. 发明申请

US20060279828A1 Deep quantum well electro-absorption modulator 失效
标题翻译：深量子阱电吸收调制器
公开(公告)号：US20060279828A1
公开(公告)日：2006-12-14
申请号：US11148467
申请日：2005-06-08
申请人： David Bour , Ashish Tandon , Michael Tan
发明人： David Bour , Ashish Tandon , Michael Tan
IPC分类号： G02F1/03
CPC分类号： B82Y20/00 , G02F1/017 , G02F1/01725 , G02F2001/01766 , G02F2202/101 , G02F2202/102
摘要： Double well structures in electro-absorption modulators are created in quantum well active regions by embedding deep ultra thin quantum wells. The perturbation introduced by the embedded, deep ultra thin quantum well centered within a conventional quantum well lowers the confined energy state for the wavefunction in the surrounding larger well and typically results in the hole and electron distributions being more confined to the center of the conventional quantum well. The extinction ratio provided by the electro-absorption modulator is typically increased.
摘要翻译：电子吸收调制器中的双阱结构通过嵌入深超薄量子阱在量子阱活性区域中产生。以常规量子阱为中心的嵌入式，超超薄量子阱引入的扰动降低了周围较大阱中波函数的约束能态，并且通常导致空穴和电子分布更局限于常规量子的中心好。电吸收调制器提供的消光比通常增加。

2. 发明申请

US20060083278A1 Method and structure for deep well structures for long wavelength active regions 失效
标题翻译：长波长活性区深井结构的方法和结构
公开(公告)号：US20060083278A1
公开(公告)日：2006-04-20
申请号：US10970528
申请日：2004-10-20
申请人： Michael Tan , Ashish Tandon , David Bour
发明人： Michael Tan , Ashish Tandon , David Bour
IPC分类号： H01S5/00
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/06 , H01S5/183 , H01S5/3408 , H01S5/34313 , H01S5/34333
摘要： Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs, InGaAsSb, InP and GaN material systems, for example.
摘要翻译：子阱被添加到发光半导体结构的量子阱中，以将其发射波长移动到更长的波长。本发明的典型应用是例如InGaAs，InGaAsSb，InP和GaN材料体系。

3. 发明申请

US20060274801A1 Active region of a light emitting device optimized for increased modulation speed operation 有权
公开(公告)号：US20060274801A1
公开(公告)日：2006-12-07
申请号：US11143374
申请日：2005-06-01
申请人： Ashish Tandon , Kostadin Djordjev , Chao-Kun Lin , Michael Tan
发明人： Ashish Tandon , Kostadin Djordjev , Chao-Kun Lin , Michael Tan
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/3407
摘要： In accordance with the invention, increased maximum modulation speeds and improved hole distribution are obtained for light emitting devices. Barrier layers of a quantum well structure for a light emitting device are formed with varying barrier energy heights. Quantum well layers of the quantum well structure are formed between the barrier layers.

4. 发明申请

US20060007974A1 Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof 失效
标题翻译：用于增加发光器件的最大调制速度的方法，以及具有增加的最大调制速度的发光器件及其量子阱结构
公开(公告)号：US20060007974A1
公开(公告)日：2006-01-12
申请号：US10885952
申请日：2004-07-06
申请人： Ashish Tandon , Michael Tan , Ying-Lan Chang
发明人： Ashish Tandon , Michael Tan , Ying-Lan Chang
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/18358 , H01S5/2009 , H01S5/34313 , H01S5/34346 , H01S5/34353 , H01S5/34386
摘要： The method comprises forming barrier layers of AlxGa1-xAs, forming a quantum well layer of InGaAs between the barrier layers, and forming an interfacial layer between the quantum well layer and each of the barrier layers.
摘要翻译：该方法包括形成Al x Ga 1-x As的阻挡层，在阻挡层之间形成InGaAs的量子阱层，并在量子阱之间形成界面层层和每个阻挡层。

5. 发明申请

US20050184303A1 Strain compensating structure to reduce oxide-induced defects in semiconductor devices 审中-公开
标题翻译：应变补偿结构，以减少半导体器件中的氧化物引起的缺陷
公开(公告)号：US20050184303A1
公开(公告)日：2005-08-25
申请号：US10786800
申请日：2004-02-25
申请人： Ashish Tandon , Michael Leary , Michael Tan , Ying-Lan Chang
发明人： Ashish Tandon , Michael Leary , Michael Tan , Ying-Lan Chang
IPC分类号： H01L29/22 , H01L33/14 , H01S5/00 , H01S5/183 , H01S5/32
CPC分类号： H01L33/145 , H01S5/18313 , H01S5/3201
摘要： A strain compensating structure comprises a strain compensating layer adjacent an oxide-forming layer. The strain compensating layer compensates for the change in the lattice parameter due to oxidation of at least part of the oxide-forming layer.
摘要翻译：应变补偿结构包括邻近氧化物形成层的应变补偿层。应变补偿层补偿由于至少部分氧化物形成层的氧化引起的晶格参数的变化。

6. 发明授权

US08461061B2 Quartz boat method and apparatus for thin film thermal treatment 失效
标题翻译：用于薄膜热处理的石英舟法和设备
公开(公告)号：US08461061B2
公开(公告)日：2013-06-11
申请号：US13171089
申请日：2011-06-28
申请人： Paul Alexander , Jurg Schmitzberger , Ashish Tandon , Robert D. Wieting
发明人： Paul Alexander , Jurg Schmitzberger , Ashish Tandon , Robert D. Wieting
IPC分类号： H01L21/00
CPC分类号： H01L21/67316 , H01L21/67109 , H01L21/67313 , H01L21/6734 , H01L31/18
摘要： A method of supporting a plurality of planar substrates in a tube shaped furnace for conducting a thermal treatment process is disclosed. The method uses a boat fixture having a base frame including two length portions and a first width portion, a second width portion, and one or more middle members connected between the two length portions. Additionally, the method includes mounting a removable first grooved rod respectively on the first width portion, the second width portion, and each of the one or more middle members, each first grooved rod having a first plurality of grooves characterized by a first spatial configuration. The method further includes inserting one or two substrates of a plurality of planar substrates into each groove in the boat fixture separated by a distance.
摘要翻译：公开了一种在管状炉中支撑多个平面基板以进行热处理工艺的方法。该方法使用具有包括两个长度部分的基部框架和第一宽度部分，第二宽度部分以及连接在两个长度部分之间的一个或多个中间部件的船舶固定装置。另外，该方法包括分别在第一宽度部分，第二宽度部分和一个或多个中间部件中的每一个上安装可拆卸的第一带槽杆，每个第一带槽杆具有以第一空间构造为特征的第一多个凹槽。该方法还包括将多个平面基板中的一个或两个基板插入分隔开一定距离的船夹具中的每个凹槽中。

7. 发明申请

US20110259395A1 Single Junction CIGS/CIS Solar Module 审中-公开
标题翻译：单相CIGS / CIS太阳能模块
公开(公告)号：US20110259395A1
公开(公告)日：2011-10-27
申请号：US13086135
申请日：2011-04-13
申请人： Robert D. Wieting , Rajiv Pethe , Kannan Ramanathan , May Shao , Ashish Tandon
发明人： Robert D. Wieting , Rajiv Pethe , Kannan Ramanathan , May Shao , Ashish Tandon
IPC分类号： H01L31/0236 , H01L31/18 , H01L27/142
CPC分类号： H01L31/0322 , H01L21/02422 , H01L21/02488 , H01L21/02568 , H01L21/02614 , H01L31/022466 , H01L31/022483 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A high efficiency thin-film photovoltaic module is formed on a substrate. The photovoltaic module includes a plurality of stripe shaped photovoltaic cells electrically coupled to each other and physically disposed in parallel to the length one next to another across the width. Each cell includes a barrier material overlying the surface and a first electrode overlying the barrier material. Each cell further includes an absorber formed overlying the first electrode. The absorber includes a copper gallium indium diselenide compound material characterized by an energy band-gap of about 1 eV to 1.1 eV. Each cell additionally includes a buffer material overlying the absorber and a bi-layer zinc oxide material comprising a high resistivity transparent layer overlying the buffer material and a low resistivity transparent layer overlying the high resistivity transparent layer.
摘要翻译：在基板上形成高效率的薄膜光伏模块。光伏模块包括多个条形的光伏电池，它们彼此电耦合，并且物理地设置成与跨越宽度的另一个相邻的长度平行。每个电池包括覆盖在表面上的阻挡材料和覆盖阻挡材料的第一电极。每个电池还包括形成在第一电极上的吸收体。吸收剂包括铜镓铟二硒化合物材料，其特征在于约1eV至1.1eV的能带隙。每个电池还包括覆盖吸收体的缓冲材料和包含覆盖在缓冲材料上的高电阻率透明层和覆盖在高电阻率透明层上的低电阻率透明层的双层氧化锌材料。

8. 发明授权

US07443561B2 Deep quantum well electro-absorption modulator 失效
标题翻译：深量子阱电吸收调制器
公开(公告)号：US07443561B2
公开(公告)日：2008-10-28
申请号：US11148467
申请日：2005-06-08
申请人： David P. Bour , Ashish Tandon , Michael R. T. Tan
发明人： David P. Bour , Ashish Tandon , Michael R. T. Tan
IPC分类号： G02F1/03 , H01L29/06 , H01S5/00
CPC分类号： B82Y20/00 , G02F1/017 , G02F1/01725 , G02F2001/01766 , G02F2202/101 , G02F2202/102
摘要： Double well structures in electro-absorption modulators are created in quantum well active regions by embedding deep ultra thin quantum wells. The perturbation introduced by the embedded, deep ultra thin quantum well centered within a conventional quantum well lowers the confined energy state for the wavefunction in the surrounding larger well and typically results in the hole and electron distributions being more confined to the center of the conventional quantum well. The extinction ratio provided by the electro-absorption modulator is typically increased.
摘要翻译：电子吸收调制器中的双阱结构通过嵌入深超薄量子阱在量子阱活性区域中产生。以常规量子阱为中心的嵌入式，超超薄量子阱引入的扰动降低了周围较大阱中波函数的约束能态，并且通常导致空穴和电子分布更局限于常规量子的中心好。电吸收调制器提供的消光比通常增加。

9. 发明授权

US08398772B1 Method and structure for processing thin film PV cells with improved temperature uniformity 失效
标题翻译：用于处理具有改善的温度均匀性的薄膜PV电池的方法和结构
公开(公告)号：US08398772B1
公开(公告)日：2013-03-19
申请号：US12858342
申请日：2010-08-17
申请人： Ashish Tandon , Robert D. Wieting , Jurg Schmizberger , Paul Alexander
发明人： Ashish Tandon , Robert D. Wieting , Jurg Schmizberger , Paul Alexander
IPC分类号： C23C16/00 , C23C16/455 , C23C16/458
CPC分类号： C23C14/18 , C23C14/586 , C23C14/5866
摘要： An apparatus for reactive thermal treatment of thin film photovoltaic devices includes a furnace tube including an inner wall extended from a first end to a second end. The apparatus further includes a gas supply device coupled to the second end and configured to fill one or more working gases into the furnace tube. Additionally, the apparatus includes a cover configured to seal the furnace tube at the first end and serve as a heat sink for the one or more working gases. Furthermore, the apparatus includes a fixture mechanically attached to the cover. The fixture is configured to load an array of substrates into the furnace tube as the cover seals the furnace tube. Moreover, the apparatus includes a crescent shaped baffle member disposed seamlessly at a lower portion of the inner wall for blocking a convection current of the one or more working gases cooled by the cover.
摘要翻译：一种用于薄膜光伏器件的反应热处理的设备包括：炉管，其包括从第一端延伸到第二端的内壁。该装置还包括联接到第二端并被配置成将一种或多种工作气体填充到炉管中的气体供应装置。另外，该装置包括盖子，其构造成在第一端处密封炉管，并且用作一个或多个工作气体的散热器。此外，该装置包括机械地附接到盖的夹具。夹具被配置为当盖子密封炉管时将基板阵列加载到炉管中。此外，该装置包括一个新月形的挡板件，它可无缝地设置在内壁的下部，用于阻挡由盖冷却的一个或多个工作气体的对流。

10. 发明申请

US20110220198A1 Method and Device Utilizing Strained AZO Layer and Interfacial Fermi Level Pinning in Bifacial Thin Film PV Cells 审中-公开
标题翻译：在双面薄膜光伏电池中利用应变AZO层和界面费米能级固定的方法和装置
公开(公告)号：US20110220198A1
公开(公告)日：2011-09-15
申请号：US13049190
申请日：2011-03-16
申请人： Ashish Tandon , Fred Mikulec
发明人： Ashish Tandon , Fred Mikulec
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/0749 , H01L31/022483 , H01L31/0392 , H01L31/03923 , H01L31/03925 , Y02E10/541
摘要： A method for forming a bifacial thin film photovoltaic cell includes providing a glass substrate having a surface region covered by an intermediate layer and forming a thin film photovoltaic cell on the surface region. Additionally, the thin film photovoltaic cell includes an anode overlying the intermediate layer, an absorber over the anode, and a window layer and cathode over the absorber mediated by a buffer layer. The anode comprises an aluminum doped zinc oxide (AZO) layer forming a first interface with the intermediate layer and a second interface with the absorber. The AZO layer is configured to induce Fermi level pinning at the first interface and a strain field from the first interface to the second interface.
摘要翻译：形成双面薄膜光伏电池的方法包括提供具有被中间层覆盖的表面区域并在表面区域上形成薄膜光伏电池的玻璃基板。此外，薄膜光伏电池包括覆盖中间层的阳极，阳极上的吸收体，以及由缓冲层介导的吸收体上的窗口层和阴极。阳极包括与中间层形成第一界面的铝掺杂氧化锌（AZO）层和与吸收体的第二界面。 AZO层被配置为在第一界面处诱导费米能钉扎和从第一界面到第二界面的应变场。

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