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1. 发明申请

US20130269764A1 Back Contact Work Function Modification for Increasing CZTSSe Thin Film Photovoltaic Efficiency 审中-公开
标题翻译：返回联系工作功能改进增加CZTSSe薄膜光伏效率
公开(公告)号：US20130269764A1
公开(公告)日：2013-10-17
申请号：US13445406
申请日：2012-04-12
申请人： David Aaron Randolph Barkhouse , Tayfun Gokmen , Oki Gunawan , Richard Alan Haight
发明人： David Aaron Randolph Barkhouse , Tayfun Gokmen , Oki Gunawan , Richard Alan Haight
IPC分类号： H01L31/02 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/0326 , Y02E10/50
摘要： Techniques for increasing conversion efficiency of thin film photovoltaic devices through back contact work function modification are provided. In one aspect, a photovoltaic device is provided having a substrate; a back contact on the substrate, wherein at least a portion of the back contact has a work function of greater than about 4.5 electron volts; an absorber layer on a side of the back contact opposite the substrate; a buffer layer on a side of the absorber layer opposite the back contact; and a top electrode on a side of the buffer layer opposite the absorber layer. The absorber layer preferably has thickness that is less than a depletion width+an accumulation width+a carrier diffusion length.
摘要翻译：提供了通过背接触功能修改来提高薄膜光伏器件的转换效率的技术。一方面，提供一种具有基板的光伏器件; 在所述衬底上的背接触，其中所述背接触的至少一部分具有大于约4.5电子伏特的功函数; 在与所述基板相对的所述背接触侧的吸收层; 在与吸收层相反的一侧的缓冲层; 以及在缓冲层的与吸收层相对的一侧的顶部电极。吸收层优选具有小于耗尽宽度+积累宽度+载体扩散长度的厚度。

2. 发明授权

US09041389B2 Hall measurement system with rotary magnet 有权
标题翻译：霍尔测量系统带旋转磁铁
公开(公告)号：US09041389B2
公开(公告)日：2015-05-26
申请号：US13568627
申请日：2012-08-07
申请人： Tayfun Gokmen , Oki Gunawan
发明人： Tayfun Gokmen , Oki Gunawan
IPC分类号： G01R33/06 , G01R33/07 , F04D11/00 , G01R33/02
CPC分类号： G01R33/07 , F04D11/00
摘要： One or more embodiments are directed to a motor configured to rotate at least one magnet at a first frequency, a sensor configured to generate a reference signal of the at least one magnet's rotation, and a lock-in detection system configured to receive the reference signal, supply an excitation current at a second frequency to a device under test, measure a voltage from the device under test and demodulate the second frequency, and demodulate the first frequency from the measured voltage using the reference signal to obtain a Hall voltage associated with the device under test.
摘要翻译：一个或多个实施例涉及一种被配置成以第一频率旋转至少一个磁体的电动机，被配置为产生至少一个磁体旋转的参考信号的传感器，以及被配置为接收参考信号的锁定检测系统将第二频率的励磁电流提供给被测器件，测量被测器件的电压并解调第二个频率，并使用参考信号从测量的电压中解调第一个频率，以获得与被测设备

3. 发明申请

US20140028306A1 HALL MEASUREMENT SYSTEM WITH ROTARY MAGNET 审中-公开
公开(公告)号：US20140028306A1
公开(公告)日：2014-01-30
申请号：US13568627
申请日：2012-08-07
申请人： Tayfun Gokmen , Oki Gunawan
发明人： Tayfun Gokmen , Oki Gunawan
IPC分类号： G01R33/07
CPC分类号： G01R33/07 , F04D11/00
摘要： One or more embodiments are directed to a motor configured to rotate at least one magnet at a first frequency, a sensor configured to generate a reference signal of the at least one magnet's rotation, and a lock-in detection system configured to receive the reference signal, supply an excitation current at a second frequency to a device under test, measure a voltage from the device under test and demodulate the second frequency, and demodulate the first frequency from the measured voltage using the reference signal to obtain a Hall voltage associated with the device under test.

4. 发明申请

US20140028305A1 HALL MEASUREMENT SYSTEM WITH ROTARY MAGNET 审中-公开
标题翻译：霍尔测量系统与旋转磁铁
公开(公告)号：US20140028305A1
公开(公告)日：2014-01-30
申请号：US13560404
申请日：2012-07-27
申请人： Tayfun Gokmen , Oki Gunawan
发明人： Tayfun Gokmen , Oki Gunawan
IPC分类号： G01R33/07
CPC分类号： G01R33/07 , F04D11/00
摘要： One or more embodiments are directed to a motor configured to rotate at least one magnet at a first frequency, a sensor configured to generate a reference signal of the at least one magnet's rotation, and a lock-in detection system configured to receive the reference signal, supply an excitation current at a second frequency to a device under test, measure a voltage from the device under test and demodulate the second frequency, and demodulate the first frequency from the measured voltage using the reference signal to obtain a Hall voltage associated with the device under test.
摘要翻译：一个或多个实施例涉及一种被配置成以第一频率旋转至少一个磁体的电动机，被配置为产生至少一个磁体旋转的参考信号的传感器，以及被配置为接收参考信号的锁定检测系统将第二频率的励磁电流提供给被测器件，测量被测器件的电压并解调第二个频率，并使用参考信号从测量的电压中解调第一个频率，以获得与被测设备

5. 发明授权

US08614492B2 Nanowire stress sensors, stress sensor integrated circuits, and design structures for a stress sensor integrated circuit 有权
标题翻译：纳米线应力传感器，应力传感器集成电路和应力传感器集成电路的设计结构
公开(公告)号：US08614492B2
公开(公告)日：2013-12-24
申请号：US12605523
申请日：2009-10-26
申请人： Andres Bryant , Oki Gunawan , Shih-Hsien Lo , Jeffrey W Sleight
发明人： Andres Bryant , Oki Gunawan , Shih-Hsien Lo , Jeffrey W Sleight
IPC分类号： H01L29/84 , H01L21/00 , G01P15/08 , G01L9/00
CPC分类号： H01L29/66477 , B82Y10/00 , B82Y40/00 , G01B7/16 , G01B7/18 , H01L29/045 , H01L29/0665 , H01L29/66439 , H01L29/775 , Y10S977/724 , Y10S977/938 , Y10S977/956
摘要： Stress sensors and stress sensor integrated circuits using one or more nanowire field effect transistors as stress-sensitive elements, as well as design structures for a stress sensor integrated circuit embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, and related methods thereof. The stress sensors and stress sensor integrated circuits include one or more pairs of gate-all-around field effect transistors, which include one or more nanowires as a channel region. The nanowires of each of the field effect transistors are configured to change in length in response to a mechanical stress transferred from an object. A voltage output difference from the field effect transistors indicates the magnitude of the transferred mechanical stress.
摘要翻译：使用一个或多个纳米线场效应晶体管作为应力敏感元件的应力传感器和应力传感器集成电路，以及体现在用于设计，制造或测试集成电路的机器可读介质中的应力传感器集成电路的设计结构，以及相关方法。应力传感器和应力传感器集成电路包括一对或多对栅极全环场效应晶体管，其包括一个或多个纳米线作为沟道区。每个场效应晶体管的纳米线被配置为响应于从物体传递的机械应力而改变长度。与场效应晶体管的电压输出差异表示转移的机械应力的大小。

6. 发明授权

US08039292B2 Holey electrode grids for photovoltaic cells with subwavelength and superwavelength feature sizes 有权
标题翻译：具有亚波长和超波长特征尺寸的光伏电池的多孔电极网格
公开(公告)号：US08039292B2
公开(公告)日：2011-10-18
申请号：US12621226
申请日：2009-11-18
申请人： Supratik Guha , Oki Gunawan
发明人： Supratik Guha , Oki Gunawan
IPC分类号： H01L21/44
CPC分类号： H01L31/022433 , Y02E10/50
摘要： A photovoltaic cell and a method of forming an electrode grid on a photovoltaic semiconductor substrate of a photovoltaic cell are disclosed. In one embodiment, the photovoltaic cell comprises a photovoltaic semiconductor substrate; a back electrode electrically connected to a back surface of the substrate; and a front electrode electrically connected to a front surface of the substrate. The substrate, back electrode, and front electrode form an electric circuit for generating an electric current when said substrate absorbs light. The front electrode is comprised of a metal grid defining a multitude of holes. These holes may be periodic, aperiodic, or partially periodic. The front electrode may be formed by depositing nanospheres on the substrate; forming a metallic layer on the substrate, around the nanospheres; and removing the nanospheres, leaving an electrode grid defining a multitude of holes on the substrate.
摘要翻译：公开了一种光伏电池和在光伏电池的光电半导体衬底上形成电极栅格的方法。在一个实施例中，光伏电池包括光电半导体衬底; 电连接到所述基板的背面的背面电极; 以及电连接到所述基板的前表面的前电极。当基板吸收光时，基板，背面电极和正面电极形成用于产生电流的电路。前电极由限定多个孔的金属网格组成。这些孔可以是周期性的，非周期性的或部分周期性的。前电极可以通过在衬底上沉积纳米球而形成; 在纳米球周围在基底上形成金属层; 并去除纳米球，留下在基底上限定多个孔的电极网格。

7. 发明申请

US20110095267A1 Nanowire Stress Sensors and Stress Sensor Integrated Circuits, Design Structures for a Stress Sensor Integrated Circuit, and Related Methods 有权
标题翻译：纳米线应力传感器和应力传感器集成电路，应力传感器集成电路的设计结构及相关方法
公开(公告)号：US20110095267A1
公开(公告)日：2011-04-28
申请号：US12605523
申请日：2009-10-26
申请人： Andres Bryant , Oki Gunawan , Shih-Hsien Lo , Jeffrey W. Sleight
发明人： Andres Bryant , Oki Gunawan , Shih-Hsien Lo , Jeffrey W. Sleight
IPC分类号： H01L29/06 , G06F17/50 , G01B7/16
CPC分类号： H01L29/66477 , B82Y10/00 , B82Y40/00 , G01B7/16 , G01B7/18 , H01L29/045 , H01L29/0665 , H01L29/66439 , H01L29/775 , Y10S977/724 , Y10S977/938 , Y10S977/956
摘要： Stress sensors and stress sensor integrated circuits using one or more nanowire field effect transistors as stress-sensitive elements, as well as design structures for a stress sensor integrated circuit embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, and related methods thereof. The stress sensors and stress sensor integrated circuits include one or more pairs of gate-all-around field effect transistors, which include one or more nanowires as a channel region. The nanowires of each of the field effect transistors are configured to change in length in response to a mechanical stress transferred from an object. A voltage output difference from the field effect transistors indicates the magnitude of the transferred mechanical stress.
摘要翻译：使用一个或多个纳米线场效应晶体管作为应力敏感元件的应力传感器和应力传感器集成电路，以及体现在用于设计，制造或测试集成电路的机器可读介质中的应力传感器集成电路的设计结构，以及相关方法。应力传感器和应力传感器集成电路包括一对或多对栅极全环场效应晶体管，其包括一个或多个纳米线作为沟道区。每个场效应晶体管的纳米线被配置为响应于从物体传递的机械应力而改变长度。与场效应晶体管的电压输出差异表示转移的机械应力的大小。

8. 发明申请

US20100221866A1 Nano/Microwire Solar Cell Fabricated by Nano/Microsphere Lithography 有权
标题翻译：纳米/微丝太阳能电池由纳米/微球光刻制成
公开(公告)号：US20100221866A1
公开(公告)日：2010-09-02
申请号：US12480163
申请日：2009-06-08
申请人： William Graham , Supratik Guha , Oki Gunawan , George S. Tulevski , Kejia Wang , Ying Zhang
发明人： William Graham , Supratik Guha , Oki Gunawan , George S. Tulevski , Kejia Wang , Ying Zhang
IPC分类号： H01L21/28
CPC分类号： H01L31/035227 , Y10S977/813 , Y10S977/827
摘要： Techniques for fabricating nanowire/microwire-based solar cells are provided. In one, a method for fabricating a solar cell is provided. The method includes the following steps. A doped substrate is provided. A monolayer of spheres is deposited onto the substrate. The spheres include nanospheres, microspheres or a combination thereof The spheres are trimmed to introduce space between individual spheres in the monolayer. The trimmed spheres are used as a mask to pattern wires in the substrate. The wires include nanowires, microwires or a combination thereof A doped emitter layer is formed on the patterned wires. A top contact electrode is deposited over the emitter layer. A bottom contact electrode is deposited on a side of the substrate opposite the wires.
摘要翻译：提供了制造纳米线/微丝基太阳能电池的技术。其中，提供了太阳能电池的制造方法。该方法包括以下步骤。提供掺杂的衬底。单层球体沉积在基材上。球体包括纳米球，微球或其组合。球体被修整以在单层中的单个球体之间引入空间。修剪的球体用作掩模以在基底中图案线。导线包括纳米线，微丝或其组合。在图案化导线上形成掺杂的发射极层。顶部接触电极沉积在发射极层上。底部接触电极沉积在与电线相对的基板的一侧上。

9. 发明授权

US09103652B2 Non-contact sheet conductivity measurements implementing a rotating magnetic braking system 有权
标题翻译：实现旋转磁制动系统的非接触片电导率测量
公开(公告)号：US09103652B2
公开(公告)日：2015-08-11
申请号：US13529097
申请日：2012-06-21
申请人： Oki Gunawan
发明人： Oki Gunawan
IPC分类号： G01B7/14 , G01B7/06 , G01R27/00 , G01B7/02
CPC分类号： G01B7/087 , G01B7/023 , G01R27/00
摘要： A non-contact sheet conductivity measurement system includes a magnetic head apparatus, a computing system coupled to the magnetic head apparatus, a linear actuator coupled to the magnetic head apparatus, a motor controller coupled to the magnetic head apparatus, a power supply coupled to the magnetic head apparatus and a frequency meter coupled to the magnetic head apparatus.
摘要翻译：非接触片电导率测量系统包括磁头设备，耦合到磁头设备的计算系统，耦合到磁头设备的线性致动器，耦合到磁头设备的电机控制器，耦合到磁头设备的电源磁头装置和耦合到磁头装置的频率计。

10. 发明申请

US20140032166A1 CALIBRATION FREE DISTANCE SENSOR 审中-公开
公开(公告)号：US20140032166A1
公开(公告)日：2014-01-30
申请号：US13568619
申请日：2012-08-07
申请人： Oki Gunawan
发明人： Oki Gunawan
IPC分类号： G06F15/00
CPC分类号： G01B7/14 , G01B7/023 , G01R33/0035
摘要： One or more embodiments are directed to a magnet configured to be coupled to an object under test, an array of sensors configured to measure a magnetic field associated with the magnet, and a circuit configured to obtain voltage readings based on the measured magnetic field from the array of sensors and compute a distance between the array of sensors and the magnet based on the obtained voltage readings.

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