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    • 4. 发明授权
    • Fabrication techniques to enhance pressure uniformity in anodically bonded vapor cells
    • 制造技术,以提高阳极结合蒸气细胞的压力均匀性
    • US09146540B2
    • 2015-09-29
    • US13570363
    • 2012-08-09
    • Daniel W. YoungnerJeff A. RidleySon T. Lu
    • Daniel W. YoungnerJeff A. RidleySon T. Lu
    • H01L31/02G04F5/14
    • G04F5/14Y10T428/24149
    • A method of fabricating vapor cells comprises forming a plurality of vapor cell dies in a first wafer having an interior surface region and a perimeter, and forming a plurality of interconnected vent channels in the first wafer. The vent channels provide at least one pathway for gas from each vapor cell die to travel outside of the perimeter of the first wafer. The method further comprises anodically bonding a second wafer to one side of the first wafer, and anodically bonding a third wafer to an opposing side of the first wafer. The vent channels allow gas toward the interior surface region of the first wafer to be in substantially continuous pressure-equilibrium with gas outside of the perimeter of the first wafer during the anodic bonding of the second and third wafers to the first wafer.
    • 一种制造蒸汽池的方法包括在具有内表面区域和周边的第一晶片中形成多个蒸汽池模具,并在第一晶片中形成多个互连的排气通道。 通气通道为来自每个蒸汽池模具的气体提供至少一个通路,以便在第一晶片的周边外行进。 该方法还包括将第二晶片阳极结合到第一晶片的一侧,并将第三晶片阳极结合到第一晶片的相对侧。 在第二和第三晶片与第一晶片的阳极接合期间,排气通道允许气体朝向第一晶片的内表面区域与第一晶片的周边外的气体基本上连续的压力平衡。
    • 8. 发明申请
    • FABRICATION TECHNIQUES TO ENHANCE PRESSURE UNIFORMITY IN ANODICALLY BONDED VAPOR CELLS
    • 制造技术提高阳极粘结蒸汽电池的压力均匀性
    • US20110189429A1
    • 2011-08-04
    • US12879394
    • 2010-09-10
    • Daniel W. YoungnerJeff A. RidleySon T. Lu
    • Daniel W. YoungnerJeff A. RidleySon T. Lu
    • B32B3/20B32B37/02B32B37/06B32B3/12
    • G04F5/14Y10T428/24149
    • A method of fabricating vapor cells comprises forming a plurality of vapor cell dies in a first wafer having an interior surface region and a perimeter, and forming a plurality of interconnected vent channels in the first wafer. The vent channels provide at least one pathway for gas from each vapor cell die to travel outside of the perimeter of the first wafer. The method further comprises anodically bonding a second wafer to one side of the first wafer, and anodically bonding a third wafer to an opposing side of the first wafer. The vent channels allow gas toward the interior surface region of the first wafer to be in substantially continuous pressure-equilibrium with gas outside of the perimeter of the first wafer during the anodic bonding of the second and third wafers to the first wafer.
    • 一种制造蒸汽池的方法包括在具有内表面区域和周边的第一晶片中形成多个蒸汽池模具,并在第一晶片中形成多个互连的排气通道。 通气通道为来自每个蒸汽池模具的气体提供至少一个通路,以便在第一晶片的周边外行进。 该方法还包括将第二晶片阳极结合到第一晶片的一侧,并将第三晶片阳极结合到第一晶片的相对侧。 在第二和第三晶片与第一晶片的阳极接合期间,排气通道允许气体朝向第一晶片的内表面区域与第一晶片的周边外的气体基本上连续的压力平衡。
    • 9. 发明申请
    • FABRICATION TECHNIQUES TO ENHANCE PRESSURE UNIFORMITY IN ANODICALLY BONDED VAPOR CELLS
    • 制造技术提高阳极粘结蒸汽电池的压力均匀性
    • US20120298295A1
    • 2012-11-29
    • US13570363
    • 2012-08-09
    • Daniel W. YoungnerJeff A. RidleySon T. Lu
    • Daniel W. YoungnerJeff A. RidleySon T. Lu
    • B32B37/14
    • G04F5/14Y10T428/24149
    • A method of fabricating vapor cells comprises forming a plurality of vapor cell dies in a first wafer having an interior surface region and a perimeter, and forming a plurality of interconnected vent channels in the first wafer. The vent channels provide at least one pathway for gas from each vapor cell die to travel outside of the perimeter of the first wafer. The method further comprises anodically bonding a second wafer to one side of the first wafer, and anodically bonding a third wafer to an opposing side of the first wafer. The vent channels allow gas toward the interior surface region of the first wafer to be in substantially continuous pressure-equilibrium with gas outside of the perimeter of the first wafer during the anodic bonding of the second and third wafers to the first wafer.
    • 一种制造蒸汽池的方法包括在具有内表面区域和周边的第一晶片中形成多个蒸汽池模具,并在第一晶片中形成多个互连的排气通道。 通气通道为来自每个蒸汽池模具的气体提供至少一个通路,以便在第一晶片的周边外行进。 该方法还包括将第二晶片阳极结合到第一晶片的一侧,并将第三晶片阳极结合到第一晶片的相对侧。 在第二和第三晶片与第一晶片的阳极接合期间,排气通道允许气体朝向第一晶片的内表面区域与第一晶片的周边外的气体基本上连续的压力平衡。
    • 10. 发明授权
    • Fabrication techniques to enhance pressure uniformity in anodically bonded vapor cells
    • 制造技术,以提高阳极结合蒸气细胞的压力均匀性
    • US08299860B2
    • 2012-10-30
    • US12879394
    • 2010-09-10
    • Daniel W. YoungnerJeff A. RidleySon T. Lu
    • Daniel W. YoungnerJeff A. RidleySon T. Lu
    • H01S1/06H01L21/30
    • G04F5/14Y10T428/24149
    • A method of fabricating vapor cells comprises forming a plurality of vapor cell dies in a first wafer having an interior surface region and a perimeter, and forming a plurality of interconnected vent channels in the first wafer. The vent channels provide at least one pathway for gas from each vapor cell die to travel outside of the perimeter of the first wafer. The method further comprises anodically bonding a second wafer to one side of the first wafer, and anodically bonding a third wafer to an opposing side of the first wafer. The vent channels allow gas toward the interior surface region of the first wafer to be in substantially continuous pressure-equilibrium with gas outside of the perimeter of the first wafer during the anodic bonding of the second and third wafers to the first wafer.
    • 一种制造蒸汽池的方法包括在具有内表面区域和周边的第一晶片中形成多个蒸汽池模具,并在第一晶片中形成多个互连的排气通道。 通气通道为来自每个蒸汽池模具的气体提供至少一个通路,以便在第一晶片的周边外行进。 该方法还包括将第二晶片阳极结合到第一晶片的一侧,并将第三晶片阳极结合到第一晶片的相对侧。 在第二和第三晶片与第一晶片的阳极接合期间,排气通道允许气体朝向第一晶片的内表面区域与第一晶片的周边外的气体基本上连续的压力平衡。