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1. 发明申请

US20120098101A1 PHOTO-PATTERNED CARBON ELECTRONICS 有权
标题翻译：照片碳电子
公开(公告)号：US20120098101A1
公开(公告)日：2012-04-26
申请号：US13316920
申请日：2011-12-12
申请人： Daniel N. CAROTHERS , Rick THOMPSON
发明人： Daniel N. CAROTHERS , Rick THOMPSON
IPC分类号： H01L29/12
CPC分类号： H01L51/0015 , B82Y10/00 , C23C10/02 , C23C16/042 , C23C16/26 , C23C16/483 , C23C26/00 , H01L51/002 , H01L51/0048
摘要： A system is provided for the manufacture of carbon based electrical components including, an ultraviolet light source; a substrate receiving unit whereby a substrate bearing a first layer of carbon based semiconductor is received and disposed beneath the ultraviolet light source; a mask disposed between the ultraviolet light source and the carbon based semiconductor layer; a doping agent precursor source; and environmental chemical controls, configured such that light from the ultraviolet light source irradiates a doping agent precursor and the first carbon layer.
摘要翻译：提供一种用于制造碳基电气部件的系统，包括紫外光源; 基板接收单元，由此容纳并设置在所述紫外线光源下方的具有第一碳基半导体层的基板; 掩模，设置在所述紫外光源和所述碳基半导体层之间; 掺杂剂前体源; 以及环境化学品控制，其被配置为使得来自紫外光源的光照射掺杂剂前体和第一碳层。

2. 发明申请

US20090267189A1 PHOTO-PATTERNED CARBON ELECTRONICS 失效
标题翻译：照片碳电子
公开(公告)号：US20090267189A1
公开(公告)日：2009-10-29
申请号：US12497752
申请日：2009-07-06
申请人： Daniel N. CAROTHERS , Rick Thompson
发明人： Daniel N. CAROTHERS , Rick Thompson
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： H01L51/0015 , B82Y10/00 , C23C10/02 , C23C16/042 , C23C16/26 , C23C16/483 , C23C26/00 , H01L51/002 , H01L51/0048
摘要： A system is provided for the manufacture of carbon based electrical components including, an ultraviolet light source; a substrate receiving unit whereby a substrate bearing a first layer of carbon based semiconductor is received and disposed beneath the ultraviolet light source; a mask disposed between the ultraviolet light source and the carbon based semiconductor layer; a doping agent precursor source; and environmental chemical controls, configured such that light from the ultraviolet light source irradiates a doping agent precursor and the first carbon layer.
摘要翻译：提供一种用于制造碳基电气部件的系统，包括紫外光源; 基板接收单元，由此容纳并设置在所述紫外线光源下方的具有第一碳基半导体层的基板; 掩模，设置在所述紫外光源和所述碳基半导体层之间; 掺杂剂前体源; 以及环境化学品控制，其被配置为使得来自紫外光源的光照射掺杂剂前体和第一碳层。

3. 发明申请

US20110039388A1 Multi-Thickness Semiconductor With Fully Depleted Devices And Photonic Integration 有权
标题翻译：具有完全耗尽器件和光子集成的多厚度半导体
公开(公告)号：US20110039388A1
公开(公告)日：2011-02-17
申请号：US12913187
申请日：2010-10-27
申请人： Craig M. HILL , Andrew TS POMERENE , Daniel N. CAROTHERS , Timothy J. CONWAY , Vu A. VU
发明人： Craig M. HILL , Andrew TS POMERENE , Daniel N. CAROTHERS , Timothy J. CONWAY , Vu A. VU
IPC分类号： H01L21/336 , H01L21/762
CPC分类号： H01L21/84 , G02B6/136 , H01L27/1203 , H01L2924/0002 , H01L2924/00
摘要： Techniques are disclosed that facilitate fabrication of semiconductors including structures and devices of varying thickness. One embodiment provides a method for semiconductor device fabrication that includes thinning a region of a semiconductor wafer upon which the device is to be formed thereby defining a thin region and a thick region of the wafer. The method continues with forming on the thick region one or more photonic devices and/or partially depleted electronic devices, and forming on the thin region one or more fully depleted electronic devices. Another embodiment provides a semiconductor device that includes a semiconductor wafer defining a thin region and a thick region. The device further includes one or more photonic devices and/or partially depleted electronic devices formed on the thick region, and one or more fully depleted electronic devices formed on the thin region. An isolation area can be formed between the thin region and the thick region.
摘要翻译：公开了促进包括不同厚度的结构和器件的半导体的制造的技术。一个实施例提供了一种用于半导体器件制造的方法，其包括使要形成器件的半导体晶片的区域变薄从而限定晶片的薄区域和厚区域。该方法继续在厚区域上形成一个或多个光子器件和/或部分耗尽的电子器件，并且在薄区域上形成一个或多个完全耗尽的电子器件。另一个实施例提供一种半导体器件，其包括限定薄区域和厚区域的半导体晶片。该器件还包括形成在厚区域上的一个或多个光子器件和/或部分耗尽的电子器件，以及形成在薄区域上的一个或多个完全耗尽的电子器件。可以在薄区域和厚区域之间形成隔离区域。

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