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1. 发明授权

US07224595B2 276-Pin buffered memory module with enhanced fault tolerance 有权
标题翻译： 276针缓冲存储器模块，具有增强的容错能力
公开(公告)号：US07224595B2
公开(公告)日：2007-05-29
申请号：US10903371
申请日：2004-07-30
申请人： Daniel M. Dreps , Frank D. Ferriaolo , Kevin C. Gower , Mark W. Kellogg , Roger A. Rippens
发明人： Daniel M. Dreps , Frank D. Ferriaolo , Kevin C. Gower , Mark W. Kellogg , Roger A. Rippens
IPC分类号： G11C5/06 , G11C5/02
CPC分类号： G11C5/04
摘要： A dual inline memory module (DIMM) includes a card having a length of about 151.2 to about 151.5 millimeters, a plurality of individual local memory devices attached to the card, and a buffer device attached to the card, the buffer device configured for converting a packetized memory interface. The card includes at least 276 pins configured thereon.
摘要翻译：双列直插式存储器模块（DIMM）包括具有大约151.2至大约151.5毫米的长度的卡，连接到卡的多个单独的本地存储器件以及连接到卡的缓冲器装置，缓冲器装置被配置为将打包内存界面。该卡片包括至少276个配置在其上的针脚。

2. 发明申请

US20080183957A1 276-PIN BUFFERED MEMORY MODULE WITH ENHANCED FAULT TOLERANCE 失效
标题翻译： 276引脚缓冲存储器模块，具有增强的故障容限
公开(公告)号：US20080183957A1
公开(公告)日：2008-07-31
申请号：US12060992
申请日：2008-04-02
申请人： Daniel M. Dreps , Frank D. Ferraiolo , Kevin C. Gower , Mark W. Kellogg , Roger A. Rippens
发明人： Daniel M. Dreps , Frank D. Ferraiolo , Kevin C. Gower , Mark W. Kellogg , Roger A. Rippens
IPC分类号： G06F12/00 , G06F11/00
CPC分类号： G11C5/04
摘要： A dual inline memory module (DIMM) includes a card having a length of about 151.2 to about 151.5 millimeters, a plurality of individual local memory devices attached to the card, and a buffer device attached to the card, the buffer device configured for converting a packetized memory interface. The card includes at least 276 pins configured thereon.
摘要翻译：双列直插式存储器模块（DIMM）包括具有大约151.2至大约151.5毫米的长度的卡，连接到卡的多个单独的本地存储器件以及连接到卡的缓冲器装置，缓冲器装置被配置为将打包内存界面。该卡片包括至少276个配置在其上的针脚。

3. 发明授权

US07551468B2 276-pin buffered memory module with enhanced fault tolerance 失效
标题翻译： 276引脚缓冲存储器模块，具有增强的容错能力
公开(公告)号：US07551468B2
公开(公告)日：2009-06-23
申请号：US12060992
申请日：2008-04-02
申请人： Daniel M. Dreps , Frank D. Ferraiolo , Kevin C. Gower , Mark W. Kellogg , Roger A. Rippens
发明人： Daniel M. Dreps , Frank D. Ferraiolo , Kevin C. Gower , Mark W. Kellogg , Roger A. Rippens
IPC分类号： G11C5/06 , G11C5/02
CPC分类号： G11C5/04
摘要： A dual inline memory module (DIMM) includes a card having a length of about 151.2 to about 151.5 millimeters, a plurality of individual local memory devices attached to the card, and a buffer device attached to the card, the buffer device configured for converting a packetized memory interface. The card includes at least 276 pins configured thereon.
摘要翻译：双列直插式存储器模块（DIMM）包括具有大约151.2至大约151.5毫米的长度的卡，连接到卡的多个单独的本地存储器件以及连接到卡的缓冲器装置，缓冲器装置被配置为将打包内存界面。该卡片包括至少276个配置在其上的针脚。

4. 发明申请

US20080177942A1 276-PIN BUFFERED MEMORY MODULE WITH ENHANCED FAULT TOLERANCE 失效
公开(公告)号：US20080177942A1
公开(公告)日：2008-07-24
申请号：US12060998
申请日：2008-04-02
申请人： Daniel M. Dreps , Frank D. Ferraiolo , Kevin C. Gower , Mark W. Kellogg , Roger A. Rippens
发明人： Daniel M. Dreps , Frank D. Ferraiolo , Kevin C. Gower , Mark W. Kellogg , Roger A. Rippens
IPC分类号： G06F12/00
CPC分类号： G11C5/04
摘要： A dual inline memory module (DIMM) includes a card having a length of about 151.2 to about 151.5 millimeters, a plurality of individual local memory devices attached to the card, and a buffer device attached to the card, the buffer device configured for converting a packetized memory interface. The card includes at least 276 pins configured thereon.

5. 发明授权

US07729153B2 276-pin buffered memory module with enhanced fault tolerance 失效
标题翻译： 276引脚缓冲存储器模块，具有增强的容错能力
公开(公告)号：US07729153B2
公开(公告)日：2010-06-01
申请号：US12060998
申请日：2008-04-02
申请人： Daniel M. Dreps , Frank D. Ferraiolo , Kevin C. Gower , Mark W. Kellogg , Roger A. Rippens
发明人： Daniel M. Dreps , Frank D. Ferraiolo , Kevin C. Gower , Mark W. Kellogg , Roger A. Rippens
IPC分类号： G11C5/02 , G11C5/06
CPC分类号： G11C5/04
摘要： A dual inline memory module (DIMM) includes a card having a length of about 151.2 to about 151.5 millimeters, a plurality of individual local memory devices attached to the card, and a buffer device attached to the card, the buffer device configured for converting a packetized memory interface. The card includes at least 276 pins configured thereon.
摘要翻译：双列直插式存储器模块（DIMM）包括具有大约151.2至大约151.5毫米的长度的卡，连接到卡的多个单独的本地存储器件以及连接到卡的缓冲器装置，缓冲器装置被配置为将打包内存界面。该卡片包括至少276个配置在其上的针脚。

6. 发明授权

US07403409B2 276-pin buffered memory module with enhanced fault tolerance 有权
标题翻译： 276引脚缓冲存储器模块，具有增强的容错能力
公开(公告)号：US07403409B2
公开(公告)日：2008-07-22
申请号：US11735640
申请日：2007-04-16
申请人： Daniel M. Dreps , Frank D. Ferraiolo , Kevin C. Gower , Mark W. Kellogg , Roger A. Rippens
发明人： Daniel M. Dreps , Frank D. Ferraiolo , Kevin C. Gower , Mark W. Kellogg , Roger A. Rippens
IPC分类号： G11C5/06 , G11C5/02
CPC分类号： G11C5/04
摘要： A dual inline memory module (DIMM) includes a card having a length of about 151.2 to about 151.5 millimeters, a plurality of individual local memory devices attached to the card, and a buffer device attached to the card, the buffer device configured for converting a packetized memory interface. The card includes at least 276 pins configured thereon.
摘要翻译：双列直插式存储器模块（DIMM）包括具有大约151.2至大约151.5毫米的长度的卡，连接到卡的多个单独的本地存储器件以及连接到卡的缓冲器装置，缓冲器装置被配置为将打包内存界面。该卡片包括至少276个配置在其上的针脚。

7. 发明授权

US07529112B2 276-Pin buffered memory module with enhanced fault tolerance and a performance-optimized pin assignment 失效
标题翻译： 276引脚缓冲存储器模块，具有增强的容错能力和性能优化的引脚分配
公开(公告)号：US07529112B2
公开(公告)日：2009-05-05
申请号：US11695679
申请日：2007-04-03
申请人： Daniel M. Dreps , Frank D. Ferraiolo , Kevin C. Gower , Roger A. Rippens
发明人： Daniel M. Dreps , Frank D. Ferraiolo , Kevin C. Gower , Roger A. Rippens
IPC分类号： G11C5/02 , G11C5/06
CPC分类号： G11C5/04
摘要： A dual inline memory module (DIMM) includes a card having a length of about 151.2 to about 151.5 millimeters, a plurality of individual local memory devices attached to the card, and a buffer device attached to the card, the buffer device configured for converting a packetized memory interface. The card includes at least 276 pins configured thereon including a plurality of high-speed bus interface pills arranged on said card for communicating with a plurality of high-speed busses. The high-speed bus interface pins associated with a single high-speed bus are located on one side of the card with respect to a midpoint of the length of the card, thus the pin assignments are defined such that the performance of the DIMM in a system is optimized for high frequency operation.
摘要翻译：双列直插式存储器模块（DIMM）包括具有大约151.2至大约151.5毫米的长度的卡，连接到卡的多个单独的本地存储器件以及连接到卡的缓冲器装置，缓冲器装置被配置为将打包内存界面。该卡包括至少276个引脚，其构造为包括布置在所述卡上的多个高速总线接口卡，用于与多个高速总线通信。与单个高速总线相关联的高速总线接口引脚相对于卡的长度的中点位于卡的一侧，因此引脚分配被定义为使得DIMM的性能在系统针对高频操作进行了优化。

8. 发明授权

US07441073B2 System for indicating a plug position for a memory module in a memory system 有权
标题翻译：用于指示存储器系统中的存储器模块的插头位置的系统
公开(公告)号：US07441073B2
公开(公告)日：2008-10-21
申请号：US11925210
申请日：2007-10-26
申请人： Roger A. Rippens , Donald J. Swietek
发明人： Roger A. Rippens , Donald J. Swietek
IPC分类号： G06F12/10
CPC分类号： G11C5/04
摘要： A memory system including a first and second of set of socket pads adapted for connection to memory module continuity pins. The memory system also includes a first indicator corresponding to the first set of socket pads. The memory system also includes a second indicator corresponding to the second set of socket pads. The first indicator is active and the second indicator is inactive when the first and second set of socket pads are empty. The first indicator is inactive and the second indicator is inactive when then first and second set of socket pads contain the continuity pins. The first indicator is inactive and the second indicator is active when the first set of socket pads contain the continuity pins and the second set of socket pads is empty.
摘要翻译：存储器系统，包括适于连接到存储器模块连续性引脚的一组插座焊盘的第一和第二组。存储器系统还包括对应于第一组插座焊盘的第一指示器。存储器系统还包括对应于第二组插座垫的第二指示器。当第一组和第二组插座垫为空时，第一个指示器处于活动状态，第二个指示灯不起作用。当第一组和第二组插座垫包含连续性引脚时，第一个指示灯不起作用，第二个指示灯无效。当第一组插座垫包含连续性引脚并且第二组插座垫为空时，第一个指示器不起作用，第二个指示器有效。

9. 发明授权

US07308527B2 System for indicating a plug position for a memory module in a memory system 有权
标题翻译：用于指示存储器系统中的存储器模块的插头位置的系统
公开(公告)号：US07308527B2
公开(公告)日：2007-12-11
申请号：US11041662
申请日：2005-01-24
申请人： Roger A. Rippens , Donald J. Swietek
发明人： Roger A. Rippens , Donald J. Swietek
IPC分类号： G06F12/10
CPC分类号： G11C5/04
摘要： A memory system including a first and second of set of socket pads adapted for connection to memory module continuity pins. The memory system also includes a first indicator corresponding to the first set of socket pads. The memory system also includes a second indicator corresponding to the second set of socket pads. The first indicator is active and the second indicator is inactive when the first and second set of socket pads are empty. The first indicator is inactive and the second indicator is inactive when then first and second set of socket pads contain the continuity pins. The first indicator is inactive and the second indicator is active when the first set of socket pads contain the continuity pins and the second set of socket pads is empty.
摘要翻译：存储器系统，包括适于连接到存储器模块连续性引脚的一组插座焊盘的第一和第二组。存储器系统还包括对应于第一组插座焊盘的第一指示器。存储器系统还包括对应于第二组插座垫的第二指示器。当第一组和第二组插座垫为空时，第一个指示器处于活动状态，第二个指示灯不起作用。当第一组和第二组插座垫包含连续性引脚时，第一个指示灯不起作用，第二个指示灯无效。当第一组插座垫包含连续性引脚并且第二组插座垫为空时，第一个指示器不起作用，第二个指示器有效。

10. 发明授权

US4771366A Ceramic card assembly having enhanced power distribution and cooling 失效
标题翻译：具有增强的配电和冷却的陶瓷卡组件
公开(公告)号：US4771366A
公开(公告)日：1988-09-13
申请号：US70281
申请日：1987-07-06
申请人： Bruce E. Blake , Eric B. Hultmark , Frank P. Presti , Raymond Ricci , Roger A. Rippens
发明人： Bruce E. Blake , Eric B. Hultmark , Frank P. Presti , Raymond Ricci , Roger A. Rippens
IPC分类号： H01L23/52 , G06F1/18 , H01L23/44 , H01L23/538 , H05K1/02 , H05K1/03 , H05K1/14 , H05K3/34 , H05K7/02 , H05K7/20
CPC分类号： G06F1/189 , H01L23/445 , H01L23/5385 , H05K1/0263 , H05K7/023 , H01L2924/0002 , H05K1/0306 , H05K1/141 , H05K2201/10272 , H05K3/3421 , H05K3/3436
摘要： A ceramic card assembly which provides high density three dimensional semiconductor device packaging and overcomes the power distribution and thermal management problems that have impaired prior ceramic cards. The ceramic card assembly combines ceramic cards with flexible power distribution structures which provide low inductance and low resistance power distribution, making ceramic cards available for high performance VLSI systems. Each ceramic card assembly comprises a ceramic card having a plurality of chip sites and power contacts thereon, and at least one flexible power distribution structure having alternating insulation (i.e. polyimide) layers and conductor (i.e., copper) layers, the flexible power distribution structures are mounted adjacent to the ceramic cards so that conductive layers of the ceramic cards are selectively exposed to the power contacts. The ceramic card assemblies are preferably combined into a field replaceable unit that includes cold plates between ceramic cards. High density packages further include ceramic in-line packages which quadruple current day memory density.

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