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1. 发明授权

US08450140B2 Method for large-scale manufacturing of photovoltaic cells for a converter panel and photovoltaic converter panel 失效
标题翻译：用于大规模生产转换器面板和光伏转换器面板的光伏电池的方法
公开(公告)号：US08450140B2
公开(公告)日：2013-05-28
申请号：US12999236
申请日：2008-06-18
申请人： Daniel Lepori , Tobias Roschek , Ulrich Kroll
发明人： Daniel Lepori , Tobias Roschek , Ulrich Kroll
IPC分类号： H01L21/00 , H01L21/20 , H01L21/36
CPC分类号： H01L31/076 , H01L31/075 , H01L31/1816 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： So as to improve large-scale industrial manufacturing of photovoltaic cells and of the respective converter panels at a photovoltaic cell with a microcrystalline layer of intrinsic silicon compound at least one of the adjacent layers of doped silicon material is conceived as a an amorphous layer.
摘要翻译：为了改善在具有本征硅化合物的微晶层的光伏电池的光伏电池和各个转换器面板的大规模工业制造中，至少一个相邻的掺杂硅材料层被认为是非晶层。

2. 发明申请

US20110108109A1 METHOD FOR LARGE-SCALE MANUFACTURING OF PHOTOVOLTAIC CELLS FOR A CONVERTER PANEL AND PHOTOVOLTAIC CONVERTER PANEL 失效
标题翻译：用于转换器面板和光电转换器面板的光电池的大规模制造方法
公开(公告)号：US20110108109A1
公开(公告)日：2011-05-12
申请号：US12999236
申请日：2008-06-18
申请人： Ulrich Kroll , Daniel Lepori , Tobias Roschek
发明人： Ulrich Kroll , Daniel Lepori , Tobias Roschek
IPC分类号： H01L31/0368 , H01L31/18
CPC分类号： H01L31/076 , H01L31/075 , H01L31/1816 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： So as to improve large-scale industrial manufacturing of photovoltaic cells and of the respective converter panels at a photovoltaic cell with a microcrystalline layer of intrinsic silicon compound at least one of the adjacent layers of doped silicon material is conceived as a an amorphous layer.
摘要翻译：为了改善在具有本征硅化合物的微晶层的光伏电池的光伏电池和各个转换器面板的大规模工业制造中，至少一个相邻的掺杂硅材料层被认为是非晶层。

3. 发明申请

US20120325284A1 THIN-FILM SILICON TANDEM SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：薄膜硅胶太阳能电池及其制造方法
公开(公告)号：US20120325284A1
公开(公告)日：2012-12-27
申请号：US13516261
申请日：2010-10-28
申请人： Tobias Roschek , Hanno Goldbach
发明人： Tobias Roschek , Hanno Goldbach
IPC分类号： H01L31/042 , H01L31/076 , H01L31/20
CPC分类号： H01L31/075 , H01L31/076 , Y02E10/548
摘要： The photovoltaic cell comprises, deposited on a transparent substrate in the following order: a first conductive oxide layer; a first p-i-n junction; a second p-i-n junction; a second conductive oxide layer, wherein said first conductive oxide layer is substantially transparent and comprises a low-pressure chemical vapor deposited ZnO layer; and said second conductive oxide layer comprises an at least partially transparent low-pressure chemical vapor deposited ZnO layer; and wherein said first p-i-n junction comprises in the following order: a layer of p-doped a-Si:H deposited using PECVD and having at its end region facing toward said second p-i-n junction a higher band gap than at its end region facing toward said first conductive oxide layer; a buffer layer of a-Si:H deposited using PECVD without voluntary addition of a dopant; a layer of substantially intrinsic a-Si:H deposited using PECVD; a first layer of n-doped a-Si:H deposited using PECVD; and a layer of n-doped μc-Si:H deposited using PECVD; and wherein said second p-i-n junction comprises in the following order a layer of p-doped μc-Si:H deposited using PECVD; a layer of substantially intrinsic μc-Si:H deposited using PECVD; and a second layer of n-doped a-Si:H deposited using PECVD. The photovoltaic converter panel comprises at least one such photovoltaic cell.
摘要翻译：光伏电池包括以下列顺序沉积在透明基板上：第一导电氧化物层; 第一个p-i-n结; 第二个p-i-n结; 第二导电氧化物层，其中所述第一导电氧化物层基本上是透明的，并且包括低压化学气相沉积的ZnO层; 并且所述第二导电氧化物层包括至少部分透明的低压化学气相沉积ZnO层; 并且其中所述第一pin结包括以下顺序：使用PECVD沉积的p掺杂的a-Si：H层，并且在其面向所述第二pin结的端部区域具有比在其面向所述第二pin结的端部区域更高的带隙第一导电氧化物层; 使用PECVD沉积的a-Si：H的缓冲层，而不自愿添加掺杂剂; 使用PECVD沉积的基本上本征的a-Si：H层; 使用PECVD沉积的n掺杂a-Si：H的第一层; 和使用PECVD沉积的n掺杂的μc-Si：H层; 并且其中所述第二p-i-n结以以下顺序包括使用PECVD沉积的p掺杂的μc-Si：H层; 使用PECVD沉积的基本上固有的μc-Si：H层; 以及使用PECVD沉积的n掺杂的a-Si：H的第二层。光伏转换器面板包括至少一个这样的光伏电池。

4. 发明申请

US20110129954A1 METHOD FOR MANUFACTURING A PHOTOVOLTAIC CELL STRUCTURE 审中-公开
标题翻译：制造光伏电池结构的方法
公开(公告)号：US20110129954A1
公开(公告)日：2011-06-02
申请号：US13056136
申请日：2009-07-27
申请人： Markus Kupich , Johannes Meier , Stefano Benagli , Tobias Roschek
发明人： Markus Kupich , Johannes Meier , Stefano Benagli , Tobias Roschek
IPC分类号： H01L31/18
CPC分类号： H01L31/076 , H01L31/1824 , H01L31/186 , H01L31/1864 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： In the frame of photovoltaic cell manufacturing a silicon compound layer is deposited upon a carrier structure. Manufacturing flexibility is increased on one hand by incorporating ambient air exposure of such silicon compound layer and on the other preventing deterioration of reproducibility by such ambient air exposure by enriching the surface of the addressed silicon compound layer which is to be exposed to ambient air to an oxygen enrichment.
摘要翻译：在光伏电池制造的框架中，硅化合物层沉积在载体结构上。一方面通过引入这种硅化合物层的环境空气暴露来增加制造灵活性，另一方面通过将待暴露于环境空气的被寻址的硅化合物层的表面富集，从而防止这种环境空气暴露造成的再现性的劣化富氧。

5. 发明授权

US07981776B2 Method for depositing silicon 失效
标题翻译：沉积硅的方法
公开(公告)号：US07981776B2
公开(公告)日：2011-07-19
申请号：US10547118
申请日：2004-01-20
申请人： Tobias Roschek , Bernd Rech
发明人： Tobias Roschek , Bernd Rech
IPC分类号： H01L21/00
CPC分类号： H01L21/0262 , C23C16/24 , C23C16/45557 , C23C16/505 , H01L21/02532 , H01L31/1824 , Y02E10/545 , Y02P70/521
摘要： The inventive method for depositing silicon onto a substrate firstly involves the introduction of a reactive silicon-containing gas and hydrogen into the plasma chamber and then the initiation of the plasma. After initiating the plasma, only reactive silicon-containing gas or a gas mixture containing hydrogen is supplied to the plasma chamber in an alternatively continuous manner, and the gas mixture located inside the chamber is, at least in part, simultaneously withdrawn from the chamber. From the start, homogeneous microcrystalline silicon is deposited onto the substrate in the presence of hydrogen.
摘要翻译：将硅沉积到衬底上的本发明方法首先涉及将反应性含硅气体和氢气引入等离子体室中，然后引入等离子体。在启动等离子体之后，只有反应性含硅气体或含有氢气的气体混合物以交替连续的方式供应到等离子体室，并且位于室内的气体混合物至少部分地从腔室中同时抽出。从一开始，均匀的微晶硅在氢的存在下沉积到衬底上。

6. 发明申请

US20110177627A1 ASSEMBLY LINE FOR PHOTOVOLTAIC DEVICES 审中-公开
标题翻译：光伏器件组装线
公开(公告)号：US20110177627A1
公开(公告)日：2011-07-21
申请号：US12988059
申请日：2009-04-16
申请人： Andreas Huegli , Reto Koepfli , Tobias Roschek , Bernd Schwarzenegger , Adolf Ungar , Oliver Kluth , Michael Mohr
发明人： Andreas Huegli , Reto Koepfli , Tobias Roschek , Bernd Schwarzenegger , Adolf Ungar , Oliver Kluth , Michael Mohr
IPC分类号： H01L31/18
CPC分类号： H01L31/1876 , H01L31/1824 , H01L31/1836 , H01L31/1852 , Y02E10/544 , Y02E10/545 , Y02P70/521 , Y10T29/5313
摘要： The present application provides a method for the production of photovoltaic devices, preferably tandem solar cells. The method comprises the steps of: Providing at least one substrate comprising a front contact; and depositing at least a first semiconductor stack onto the substrate to produce a photo-voltaic device; and comprises at least two of the steps of: applying a back contact to the photovoltaic device; contacting of the photovoltaic device; removal of unnecessary material from the edge regions of the photovoltaic device; encapsulation; cross-contacting; and/or framing of the photovoltaic device, wherein the substrate is continuously or semi-continuously moved from one step of the method to the next step of the method. The present application furthermore provides a system to carry out the method of the invention.
摘要翻译：本申请提供了一种生产光伏器件，优选串联太阳能电池的方法。该方法包括以下步骤：提供至少一个包括前触点的基板; 以及将至少第一半导体堆叠沉积到所述衬底上以产生光伏器件; 并且包括以下步骤中的至少两个：将后接触施加到所述光伏器件; 光电器件的接触; 从光伏器件的边缘区域去除不需要的材料; 封装交叉接触; 和/或框架，其中基板从该方法的一个步骤连续或半连续移动到该方法的下一步骤。本申请还提供了一种执行本发明的方法的系统。

7. 发明申请

US20110057276A1 METHOD FOR MANUFACTURING A PHOTOVOLTAIC CELL STRUCTURE 有权
标题翻译：制造光伏电池结构的方法
公开(公告)号：US20110057276A1
公开(公告)日：2011-03-10
申请号：US12921823
申请日：2009-09-07
申请人： Johannes Meier , Markus Bronner , Markus Kupich , Tobias Roschek , Hanno Goldbach
发明人： Johannes Meier , Markus Bronner , Markus Kupich , Tobias Roschek , Hanno Goldbach
IPC分类号： H01L31/0256
CPC分类号： H01L31/1824 , H01L31/076 , H01L31/077 , H01L31/202 , H01L31/208 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： In the frame of manufacturing a photovoltaic cell a layer (3) of silicon compound is deposited on a structure (1). The yet uncovered surface (3a) is treated in a predetermined oxygen (O2) containing atmosphere which additionally contains a dopant (D). Thereby, the silicon compound layer is oxidized and doped in a thin surface area (5).
摘要翻译：在制造光伏电池的框架中，硅化合物层（3）沉积在结构（1）上。尚未覆盖的表面（3a）在另外含有掺杂剂（D）的预定含氧（O 2）气氛中处理。由此，硅化合物层被氧化并掺杂在薄表面区域（5）中。

8. 发明申请

US20060240649A1 Method for depositing silicon 失效
标题翻译：沉积硅的方法
公开(公告)号：US20060240649A1
公开(公告)日：2006-10-26
申请号：US10547118
申请日：2004-01-20
申请人： Tobias Roschek , Bernd Rech
发明人： Tobias Roschek , Bernd Rech
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L21/0262 , C23C16/24 , C23C16/45557 , C23C16/505 , H01L21/02532 , H01L31/1824 , Y02E10/545 , Y02P70/521
摘要： The inventive method for depositing silicon onto a substrate firstly involves the introduction of a reactive silicon-containing gas and hydrogen into the plasma chamber and then the initiation of the plasma. After initiating the plasma, only reactive silicon-containing gas or a gas mixture containing hydrogen is supplied to the plasma chamber in an alternatively continuous manner, and the gas mixture located inside the chamber is, at least in part, simultaneously withdrawn from the chamber. From the start, homogeneous microcrystalline silicon is deposited onto the substrate in the presence of hydrogen.
摘要翻译：将硅沉积到衬底上的本发明方法首先涉及将反应性含硅气体和氢气引入等离子体室中，然后引入等离子体。在启动等离子体之后，只有反应性含硅气体或含有氢气的气体混合物以交替连续的方式供应到等离子体室，并且位于室内的气体混合物至少部分地从腔室中同时抽出。从一开始，均匀的微晶硅在氢的存在下沉积到衬底上。

9. 发明授权

US08802485B2 Method for manufacturing a photovoltaic cell structure 有权
标题翻译：光伏电池结构的制造方法
公开(公告)号：US08802485B2
公开(公告)日：2014-08-12
申请号：US12921823
申请日：2009-09-07
申请人： Johannes Meier , Markus Bronner , Markus Kupich , Tobias Roschek , Hanno Goldbach
发明人： Johannes Meier , Markus Bronner , Markus Kupich , Tobias Roschek , Hanno Goldbach
IPC分类号： H01L31/18
CPC分类号： H01L31/1824 , H01L31/076 , H01L31/077 , H01L31/202 , H01L31/208 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： In the frame of manufacturing a photovoltaic cell a layer (3) of silicon compound is deposited on a structure (1). The yet uncovered surface (3a) is treated in a predetermined oxygen (O2) containing atmosphere which additionally contains a dopant (D). Thereby, the silicon compound layer is oxidized and doped in a thin surface area (5).
摘要翻译：在制造光伏电池的框架中，硅化合物层（3）沉积在结构（1）上。尚未覆盖的表面（3a）在另外含有掺杂剂（D）的预定含氧（O 2）气氛中处理。由此，硅化合物层被氧化并掺杂在薄表面区域（5）中。

10. 发明申请

US20110180124A1 PHOTOVOLTAIC CELL AND METHOD OF MANUFACTURING A PHOTOVOLTAIC CELL 审中-公开
标题翻译：光伏电池和制造光伏电池的方法
公开(公告)号：US20110180124A1
公开(公告)日：2011-07-28
申请号：US13059265
申请日：2009-07-08
申请人： Hanno Goldbach , Tobias Roschek , Stefano Benagli , Bogdan Mereu
发明人： Hanno Goldbach , Tobias Roschek , Stefano Benagli , Bogdan Mereu
IPC分类号： H01L31/042 , H01L31/075 , H01L31/0224 , H01L31/20 , H01L31/0288 , B82Y99/00
CPC分类号： H01L31/022466 , H01L31/1884 , Y02E10/50
摘要： A photovoltaic cell comprises an electrode layer (1b) of a transparent, electrically conductive oxide which is deposited upon a transparent carrier substrate (7b). There follows a contact layer (11b) which is of first type doped amorphous silicon and has a thickness of at most 10 nm. There follows a layer (26) of first type doped amorphous silicon compound which has a bandgap which is larger than the bandgap of the material of the addressed contact layer (11b). Subsequently to the first type doped amorphous silicon compound layer (2b) there follows a layer of intrinsic type silicon compound (3b) and a layer of second type doped silicon compound (5b).
摘要翻译：光伏电池包括沉积在透明载体衬底（7b）上的透明导电氧化物的电极层（1b）。存在第一种掺杂非晶硅的接触层（11b），其厚度至多为10nm。随后是第一类掺杂非晶硅化合物的层（26），其具有比所寻址的接触层（11b）的材料的带隙大的带隙。随后，在第一掺杂非晶硅化合物层（2b）之后，存在本征型硅化合物（3b）和第二类掺杂硅化合物（5b）的层。

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