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1. 发明申请

US20110057276A1 METHOD FOR MANUFACTURING A PHOTOVOLTAIC CELL STRUCTURE 有权
标题翻译：制造光伏电池结构的方法
公开(公告)号：US20110057276A1
公开(公告)日：2011-03-10
申请号：US12921823
申请日：2009-09-07
申请人： Johannes Meier , Markus Bronner , Markus Kupich , Tobias Roschek , Hanno Goldbach
发明人： Johannes Meier , Markus Bronner , Markus Kupich , Tobias Roschek , Hanno Goldbach
IPC分类号： H01L31/0256
CPC分类号： H01L31/1824 , H01L31/076 , H01L31/077 , H01L31/202 , H01L31/208 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： In the frame of manufacturing a photovoltaic cell a layer (3) of silicon compound is deposited on a structure (1). The yet uncovered surface (3a) is treated in a predetermined oxygen (O2) containing atmosphere which additionally contains a dopant (D). Thereby, the silicon compound layer is oxidized and doped in a thin surface area (5).
摘要翻译：在制造光伏电池的框架中，硅化合物层（3）沉积在结构（1）上。尚未覆盖的表面（3a）在另外含有掺杂剂（D）的预定含氧（O 2）气氛中处理。由此，硅化合物层被氧化并掺杂在薄表面区域（5）中。

2. 发明授权

US08802485B2 Method for manufacturing a photovoltaic cell structure 有权
标题翻译：光伏电池结构的制造方法
公开(公告)号：US08802485B2
公开(公告)日：2014-08-12
申请号：US12921823
申请日：2009-09-07
申请人： Johannes Meier , Markus Bronner , Markus Kupich , Tobias Roschek , Hanno Goldbach
发明人： Johannes Meier , Markus Bronner , Markus Kupich , Tobias Roschek , Hanno Goldbach
IPC分类号： H01L31/18
CPC分类号： H01L31/1824 , H01L31/076 , H01L31/077 , H01L31/202 , H01L31/208 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： In the frame of manufacturing a photovoltaic cell a layer (3) of silicon compound is deposited on a structure (1). The yet uncovered surface (3a) is treated in a predetermined oxygen (O2) containing atmosphere which additionally contains a dopant (D). Thereby, the silicon compound layer is oxidized and doped in a thin surface area (5).
摘要翻译：在制造光伏电池的框架中，硅化合物层（3）沉积在结构（1）上。尚未覆盖的表面（3a）在另外含有掺杂剂（D）的预定含氧（O 2）气氛中处理。由此，硅化合物层被氧化并掺杂在薄表面区域（5）中。

3. 发明申请

US20110129954A1 METHOD FOR MANUFACTURING A PHOTOVOLTAIC CELL STRUCTURE 审中-公开
标题翻译：制造光伏电池结构的方法
公开(公告)号：US20110129954A1
公开(公告)日：2011-06-02
申请号：US13056136
申请日：2009-07-27
申请人： Markus Kupich , Johannes Meier , Stefano Benagli , Tobias Roschek
发明人： Markus Kupich , Johannes Meier , Stefano Benagli , Tobias Roschek
IPC分类号： H01L31/18
CPC分类号： H01L31/076 , H01L31/1824 , H01L31/186 , H01L31/1864 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： In the frame of photovoltaic cell manufacturing a silicon compound layer is deposited upon a carrier structure. Manufacturing flexibility is increased on one hand by incorporating ambient air exposure of such silicon compound layer and on the other preventing deterioration of reproducibility by such ambient air exposure by enriching the surface of the addressed silicon compound layer which is to be exposed to ambient air to an oxygen enrichment.
摘要翻译：在光伏电池制造的框架中，硅化合物层沉积在载体结构上。一方面通过引入这种硅化合物层的环境空气暴露来增加制造灵活性，另一方面通过将待暴露于环境空气的被寻址的硅化合物层的表面富集，从而防止这种环境空气暴露造成的再现性的劣化富氧。

4. 发明申请

US20120052614A1 METHOD FOR THE MANUFACTURING OF THIN FILM PHOTOVOLTAIC CONVERTER DEVICE 失效
标题翻译：薄膜光伏转换器器件的制造方法
公开(公告)号：US20120052614A1
公开(公告)日：2012-03-01
申请号：US13319356
申请日：2010-06-01
申请人： Markus Kupich
发明人： Markus Kupich
IPC分类号： H01L31/18
CPC分类号： H01L31/0687 , H01L31/046 , H01L31/0463 , H01L31/056 , H01L31/0725 , H01L31/1864 , Y02E10/52 , Y02E10/544 , Y02P70/521
摘要： So as to improve efficiency of a thin-film photovoltaic converter device, during manufacturing of which an intermediate product module is manufactured, which comprises deposition of at least one positively doped, at least one intrinsic and at least one negatively doped silicon-based layer, the addressed intermediate product module is subjected to an annealing step during which the module is subjected to a temperature of between 100° C. to 200° C. during a time span of half an hour to four hours.
摘要翻译：为了提高薄膜光伏转换器器件的效率，在其制造中间产品模块的制造过程中，其包括沉积至少一个正掺杂的至少一个本征和至少一个负掺杂的硅基层，所处理的中间产品模块经历退火步骤，在该步骤期间，模块在半小时至四小时的时间间隔内经受100℃至200℃的温度。

5. 发明申请

US20130291933A1 SiOx n-LAYER FOR MICROCRYSTALLINE PIN JUNCTION 审中-公开
标题翻译：用于微结构晶体管接头的SiOx n层
公开(公告)号：US20130291933A1
公开(公告)日：2013-11-07
申请号：US13976695
申请日：2011-12-23
申请人： Markus Kupich , Daniel Lepori
发明人： Markus Kupich , Daniel Lepori
IPC分类号： H01L31/076 , H01L31/18
CPC分类号： H01L31/182 , H01L31/02167 , H01L31/075 , H01L31/076 , Y02E10/548
摘要： The present invention concerns a light conversion device comprising at least direction of impinging light one photovoltaic light conversion layer stack (43, 51) comprising a p-i-n junction and situated between a front (42) and back (47) electrode, wherein the n-layer (49) of the layer stack (43) situated closest to the back electrode (47) consists of a n-doped silicon- and oxygen-containing (SiOx) microcrystalline layer, and is in direct contact with the back electrode (47). The invention equally concerns a corresponding method for manufacturing such a light conversion device. The requirement for intermediate adhesion/interface layers between SiOx layer and back electrode can thus be obviated, resulting in simplified manufacture.
摘要翻译：本发明涉及一种光转换装置，其至少包括使入射光的一个光电转换层堆叠（43,41）的至少方向，所述光伏转换层堆叠（43,41）包括一个引脚接头并且位于前部（42）和后部（47）电极之间，其中所述n层位于最靠近背电极（47）的层叠体（43）的（49）由n掺杂的含硅和含氧（SiOx）微晶层组成，并与背电极（47）直接接触。本发明同样涉及制造这种光转换装置的相应方法。因此可以避免SiOx层和背面电极之间的中间粘合/界面层的要求，从而简化了制造。

6. 发明授权

US08513044B2 Method for the manufacturing of thin film photovoltaic converter device 失效
标题翻译：制造薄膜光伏转换器装置的方法
公开(公告)号：US08513044B2
公开(公告)日：2013-08-20
申请号：US13319356
申请日：2010-06-01
申请人： Markus Kupich
发明人： Markus Kupich
IPC分类号： H01L21/00 , H01L27/148
CPC分类号： H01L31/0687 , H01L31/046 , H01L31/0463 , H01L31/056 , H01L31/0725 , H01L31/1864 , Y02E10/52 , Y02E10/544 , Y02P70/521
摘要： So as to improve efficiency of a thin-film photovoltaic converter device, during manufacturing of which an intermediate product module is manufactured, which comprises deposition of at least one positively doped, at least one intrinsic and at least one negatively doped silicon-based layer, the addressed intermediate product module is subjected to an annealing step during which the module is subjected to a temperature of between 100° C. to 200° C. during a time span of half an hour to four hours.
摘要翻译：为了提高薄膜光伏转换器器件的效率，在其制造中间产品模块的制造过程中，其包括沉积至少一个正掺杂的至少一个本征和至少一个负掺杂的硅基层，所处理的中间产品模块经历退火步骤，在该步骤期间，模块在半小时至四小时的时间间隔内经受100℃至200℃的温度。

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