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1. 发明授权

US08076175B2 Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation 有权
标题翻译：制造具有晶体硅P-N同态结构的太阳能电池和用于表面钝化的非晶硅异质结的方法
公开(公告)号：US08076175B2
公开(公告)日：2011-12-13
申请号：US12036829
申请日：2008-02-25
申请人： Daniel L. Meier , Ajeet Rohatgi
发明人： Daniel L. Meier , Ajeet Rohatgi
IPC分类号： H01L21/20
CPC分类号： H01L31/0745 , H01L31/068 , H01L31/0747 , H01L31/078 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： A thin silicon solar cell is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness of approximately 50 micrometers to 500 micrometers. The solar cell comprises a first region having a p-n homojunction, a second region that creates heterojunction surface passivation, and a third region that creates heterojunction surface passivation. Amorphous silicon layers are deposited on both sides of the silicon wafer at temperatures below approximately 400 degrees Celsius to reduce the loss of passivation properties of the amorphous silicon. A final layer of transparent conductive oxide is formed on both sides at approximately 165 degrees Celsius. Metal contacts are applied to the transparent conductive oxide. The low temperatures and very thin material layers used to fabricate the outer layers of used to fabricate the outer layers of the solar cell protect the thin wafer from excessive stress that may lead to deforming the wafer.
摘要翻译：描述了薄硅太阳能电池。具体地，太阳能电池可以由厚度约为50微米至500微米的晶体硅晶片制成。太阳能电池包括具有p-n同质结的第一区域，产生异质结表面钝化的第二区域和产生异质结表面钝化的第三区域。非晶硅层在低于约400摄氏度的温度下沉积在硅晶片的两侧，以减少非晶硅的钝化性能的损失。在大约165摄氏度的两侧形成最终的透明导电氧化物层。将金属触点施加到透明导电氧化物上。用于制造用于制造太阳能电池的外层的外层的低温和非常薄的材料层保护薄晶片免受可能导致晶片变形的过大应力。

2. 发明授权

US08945976B2 Method for making solar cell having crystalline silicon P—N homojunction and amorphous silicon heterojunctions for surface passivation 有权
标题翻译：制造具有晶体硅P-N同态结构的太阳能电池和用于表面钝化的非晶硅异质结的方法
公开(公告)号：US08945976B2
公开(公告)日：2015-02-03
申请号：US13307602
申请日：2011-11-30
申请人： Daniel L. Meier , Ajeet Rohatgi
发明人： Daniel L. Meier , Ajeet Rohatgi
IPC分类号： H01L21/20 , H01L31/0747 , H01L31/068 , H01L31/20 , H01L31/0745 , H01L31/078
CPC分类号： H01L31/0745 , H01L31/068 , H01L31/0747 , H01L31/078 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： A thin silicon solar cell is described. An example solar cell may be fabricated from a crystalline silicon wafer having a thickness of approximately 50 micrometers to 500 micrometers. The solar cell comprises a first region having a p-n homojunction, a second region that creates heterojunction surface passivation, and a third region that creates heterojunction surface passivation. Amorphous silicon layers are deposited on both sides of the silicon wafer. A final layer of transparent conductive oxide is formed on both sides. Metal contacts are applied to the transparent conductive oxide.
摘要翻译：描述了薄硅太阳能电池。可以由具有约50微米至500微米的厚度的晶体硅晶片制造示例性的太阳能电池。太阳能电池包括具有p-n同质结的第一区域，产生异质结表面钝化的第二区域和产生异质结表面钝化的第三区域。非晶硅层沉积在硅晶片的两侧。在两侧形成最终的透明导电氧化物层。将金属触点施加到透明导电氧化物上。

3. 发明申请

US20090215218A1 METHOD FOR MAKING SOLAR CELL HAVING CRYSTALLINE SILICON P-N HOMOJUNCTION AND AMORPHOUS SILICON HETEROJUNCTIONS FOR SURFACE PASSIVATION 有权
标题翻译：用于制造具有结晶硅P-N HOMOJUNCTION的太阳能电池和用于表面钝化的非晶硅异质子的方法
公开(公告)号：US20090215218A1
公开(公告)日：2009-08-27
申请号：US12036829
申请日：2008-02-25
申请人： Daniel L. Meier , Ajeet Rohatgi
发明人： Daniel L. Meier , Ajeet Rohatgi
IPC分类号： H01L21/00
CPC分类号： H01L31/0745 , H01L31/068 , H01L31/0747 , H01L31/078 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： A thin silicon solar cell is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness of approximately 50 micrometers to 500 micrometers. The solar cell comprises a first region having a p-n homojunction, a second region that creates heterojunction surface passivation, and a third region that creates heterojunction surface passivation. Amorphous silicon layers are deposited on both sides of the silicon wafer at temperatures below approximately 400 degrees Celsius to reduce the loss of passivation properties of the amorphous silicon. A final layer of transparent conductive oxide is formed on both sides at approximately 165 degrees Celsius. Metal contacts are applied to the transparent conductive oxide. The low temperatures and very thin material layers used to fabricate the outer layers of used to fabricate the outer layers of the solar cell protect the thin wafer from excessive stress that may lead to deforming the wafer.
摘要翻译：描述了薄硅太阳能电池。具体地，太阳能电池可以由厚度约为50微米至500微米的晶体硅晶片制成。太阳能电池包括具有p-n同质结的第一区域，产生异质结表面钝化的第二区域和产生异质结表面钝化的第三区域。非晶硅层在低于约400摄氏度的温度下沉积在硅晶片的两侧，以减少非晶硅的钝化性能的损失。在大约165摄氏度的两侧形成最终的透明导电氧化物层。将金属触点施加到透明导电氧化物上。用于制造用于制造太阳能电池的外层的外层的低温和非常薄的材料层保护薄晶片免受可能导致晶片变形的过大应力。

4. 发明申请

US20090211623A1 SOLAR MODULE WITH SOLAR CELL HAVING CRYSTALLINE SILICON P-N HOMOJUNCTION AND AMORPHOUS SILICON HETEROJUNCTIONS FOR SURFACE PASSIVATION 审中-公开
标题翻译：带太阳能电池的太阳能电池，具有结晶硅P-N HOMOJUNCTION和表面钝化的非晶硅异质结
公开(公告)号：US20090211623A1
公开(公告)日：2009-08-27
申请号：US12036839
申请日：2008-02-25
申请人： Daniel L. Meier , Ajeet Rohatgi
发明人： Daniel L. Meier , Ajeet Rohatgi
IPC分类号： H01L31/042
CPC分类号： H01L31/068 , H01L31/048 , H01L31/0547 , H01L31/0745 , H01L31/0747 , H01L31/078 , H01L31/202 , H02S40/22 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A thin silicon solar cell is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness of approximately 50 micrometers to 500 micrometers. The solar cell comprises a first region having a p-n homojunction, a second region that creates heterojunction surface passivation, and a third region that creates heterojunction surface passivation. Amorphous silicon layers are deposited on both sides of the silicon wafer at temperatures below approximately 400 degrees Celsius to reduce the loss of passivation properties of the amorphous silicon. A final layer of transparent conductive oxide is formed on both sides at approximately 165 degrees Celsius. Metal contacts are applied to the transparent conductive oxide. The low temperatures and very thin material layers used to fabricate the outer layers of used to fabricate the outer layers of the solar cell protect the thin wafer from excessive stress that may lead to deforming the wafer.
摘要翻译：描述了薄硅太阳能电池。具体地，太阳能电池可以由厚度约为50微米至500微米的晶体硅晶片制成。太阳能电池包括具有p-n同质结的第一区域，产生异质结表面钝化的第二区域和产生异质结表面钝化的第三区域。非晶硅层在低于约400摄氏度的温度下沉积在硅晶片的两侧，以减少非晶硅的钝化性能的损失。在大约165摄氏度的两侧形成最终的透明导电氧化物层。将金属触点施加到透明导电氧化物上。用于制造用于制造太阳能电池的外层的外层的低温和非常薄的材料层保护薄晶片免受可能导致晶片变形的过大应力。

5. 发明申请

US20110139229A1 SELECTIVE EMITTER SOLAR CELLS FORMED BY A HYBRID DIFFUSION AND ION IMPLANTATION PROCESS 有权
标题翻译：通过混合扩散和离子植入过程形成的选择性发射极太阳能电池
公开(公告)号：US20110139229A1
公开(公告)日：2011-06-16
申请号：US12793334
申请日：2010-06-03
申请人： Ajeet Rohatgi , Vijay Yelundur , Preston Davis , Vinodh Chandrasekaran , Ben Damiani
发明人： Ajeet Rohatgi , Vijay Yelundur , Preston Davis , Vinodh Chandrasekaran , Ben Damiani
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/1804 , H01L21/263 , H01L21/26513 , H01L21/266 , H01L31/02363 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： Solar cells and methods for their manufacture are disclosed. An example method may include providing a silicon substrate and introducing dopant to one or more selective regions of the front surface of the substrate by ion implantation. The substrate may be subjected to a single high-temperature anneal cycle. Additional dopant atoms may be introduced for diffusion into the front surface of the substrate during the single anneal cycle. A selective emitter may be formed on the front surface of the substrate such that the one or more selective regions of the selective emitter layer are more heavily doped than the remainder of the selective emitter layer. Associated solar cells are also provided.
摘要翻译：公开了太阳能电池及其制造方法。示例性方法可以包括提供硅衬底并通过离子注入将掺杂剂引入到衬底的前表面的一个或多个选择性区域。衬底可以经受单个高温退火循环。在单个退火循环期间，可以引入另外的掺杂剂原子用于扩散到衬底的前表面。选择性发射极可以形成在衬底的前表面上，使得选择性发射极层的一个或多个选择性区域比选择性发射极层的其余部分更重掺杂。还提供了相关的太阳能电池。

6. 发明申请

US20090301559A1 SOLAR CELL HAVING A HIGH QUALITY REAR SURFACE SPIN-ON DIELECTRIC LAYER 审中-公开
标题翻译：具有高质量表面旋转介质层的太阳能电池
公开(公告)号：US20090301559A1
公开(公告)日：2009-12-10
申请号：US12120057
申请日：2008-05-13
申请人： Ajeet Rohatgi , Vichai Meemongkolkiat , Saptharishi Ramanathan
发明人： Ajeet Rohatgi , Vichai Meemongkolkiat , Saptharishi Ramanathan
IPC分类号： H01L31/02 , H01L31/028
CPC分类号： H01L31/1804 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A thin silicon solar cell having a high quality spin-on dielectric layer is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A first dielectric layer is applied to the rear surface of the silicon wafer using a spin-on process. A high temperature furnace operation provides simultaneous emitter diffusion and front and rear surface passivation. During this high temperature operation, the front emitter is formed, the rear spin-on dielectric layer is cured, and the front dielectric layer is thermally grown. Barrier layers are formed on the dielectric layers. Openings are made in the barrier layers. Contacts are formed in the openings and on the back surface barrier layer.
摘要翻译：描述了具有高品质旋涂电介质层的薄硅太阳能电池。具体地，太阳能电池可以由厚度为50至500微米的晶体硅晶片制造。使用旋转工艺将第一电介质层施加到硅晶片的后表面。高温炉操作提供同时发射极扩散和前后表面钝化。在这个高温操作期间，形成前发射体，后部旋涂电介质层固化，并且前介电层被热生长。阻挡层形成在电介质层上。开口在阻隔层中制成。触点形成在开口中和背面阻挡层上。

7. 发明授权

US5462898A Methods for passivating silicon devices at low temperature to achieve low interface state density and low recombination velocity while preserving carrier lifetime 失效
标题翻译：在低温下钝化硅器件以实现低界面态密度和低复合速度同时保持载流子寿命的方法
公开(公告)号：US5462898A
公开(公告)日：1995-10-31
申请号：US249121
申请日：1994-05-25
申请人： Zhizhang Chen , Ajeet Rohatgi
发明人： Zhizhang Chen , Ajeet Rohatgi
IPC分类号： H01L21/3105 , H01L21/316 , H01L23/31 , H01L21/02
CPC分类号： H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/02307 , H01L21/02337 , H01L21/02345 , H01L21/02362 , H01L21/3105 , H01L21/31612 , H01L23/3171 , H01L2924/0002 , H01L2924/13091 , H01L2924/19041 , Y10S438/958
摘要： A new process has been developed to achieve a very low SiO.sub.x /Si interface state density D.sub.it, low recombination velocity S ( 5 ms) for oxides deposited on silicon substrates at low temperature. The technique involves direct plasma-enhanced chemical vapor deposition (PECVD), with appropriate growth conditions, followed by a photo-assisted rapid thermal annealing (RTA) process. Approximately 500-A-thick SiO.sub.x layers are deposited on Si by PECVD at 250.degree. C. with 0.02 W/cm.sup.-2 rf power, then covered with SiN or an evaporated thin aluminum layer, and subjected to a photo-assisted anneal in forming gas ambient at 350.degree. C., resulting in an interface state density D.sub.it in the range of about 1-4.times.10.sup.10 cm.sup.-2 eV.sup.-1, which sets a record for the lowest interface state density D.sub.it for PECVD oxides fabricated to date. Detailed analysis shows that the PECVD deposition conditions, photo-assisted anneal, forming gas ambient, and the presence of an aluminum layer on top of the oxides during the anneal, all contributed to this low value of interface state density D.sub.it. Detailed metal-oxide semiconductor analysis and model calculations show that such a low recombination velocity S is the result of moderately high positive oxide charge (5.times.10.sup.11 -1.times.10.sup.12 cm.sup.-2) and relatively low midgap interface state density (1.times.10.sup.10 -4.times.10.sup.10 cm.sup.-2 eV.sup.-1). Photo-assisted anneal was found to be superior to furnace annealing, and a forming gas ambient was better than a nitrogen ambient for achieving a very low surface recombination velocity S.
摘要翻译：已经开发了一种新的工艺，以实现低沉积在硅衬底上的氧化物的低SiO x / Si界面态密度Dit，低复合速度S（<2cm / s）和高有效载流子寿命Teff（> 5ms）温度。该技术涉及直接等离子体增强化学气相沉积（PECVD），具有合适的生长条件，随后进行光辅助快速热退火（RTA）工艺。通过PECVD在250℃下以0.02W / cm 2的功率将约500-A厚的SiO x层沉积在Si上，然后用SiN或蒸发的薄铝层覆盖，并在成型中进行光辅助退火气体环境在350℃，导致约1-4x10 10 cm -2 eV-1范围内的界面态密度Dit，这为迄今为止制造的PECVD氧化物的最低界面态密度Dit设置了记录。详细分析表明，在退火过程中，PECVD沉积条件，光辅助退火，形成气体环境以及氧化物顶部铝层的存在都导致了界面态密度Dit的这个低值。详细的金属氧化物半导体分析和模型计算表明，这种低复合速度S是中等高的正电荷电荷（5×10 11 -1×10 12 cm -2）和相对较低的中间隙界面态密度（1×10-4-4×10cm-2eV-1 ）。发现光辅助退火优于炉退火，并且形成气体环境优于氮环境以实现非常低的表面复合速度S.

8. 发明申请

US20100186811A1 Silicon Carbonitride Antireflective Coating 审中-公开
标题翻译：碳氮化硅防反射涂层
公开(公告)号：US20100186811A1
公开(公告)日：2010-07-29
申请号：US12547435
申请日：2009-08-25
申请人： Dong Seop Kim , Moon Hee Kang , Ajeet Rohatgi , Michael Davies , Junegie Hong , Genowefa Jakubowska-Okoniewski , Abasifreke Udo Ebong
发明人： Dong Seop Kim , Moon Hee Kang , Ajeet Rohatgi , Michael Davies , Junegie Hong , Genowefa Jakubowska-Okoniewski , Abasifreke Udo Ebong
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/02168 , H01L31/18 , Y02E10/50
摘要： An antireflective coating for silicon-based solar cells comprising amorphous silicon carbonitride, wherein the amount of carbon in the silicon carbonitride is from 5 to 25%, a solar cell comprising the antireflective coating, and a method of preparing the antireflective coating.
摘要翻译：一种包含非晶硅碳氮化物的硅基太阳能电池的抗反射涂层，其中碳氮化硅中碳的量为5至25％，包含抗反射涂层的太阳能电池以及制备抗反射涂层的方法。

9. 发明申请

US20090325327A1 METHOD FOR CLEANING A SOLAR CELL SURFACE OPENING MADE WITH A SOLAR ETCH PASTE 有权
标题翻译：清洁太阳能电池表面的方法
公开(公告)号：US20090325327A1
公开(公告)日：2009-12-31
申请号：US12116132
申请日：2008-05-06
申请人： Ajeet Rohatgi , Vichai Meemongkolkiat
发明人： Ajeet Rohatgi , Vichai Meemongkolkiat
IPC分类号： H01L21/66
CPC分类号： H01L31/068 , H01L31/022425 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.
摘要翻译：描述具有背电介质钝化和与局部背表面场的后接触的薄硅太阳能电池。具体地，太阳能电池可以由厚度为50至500微米的晶体硅晶片制造。阻挡层和电介质层至少施加到硅晶片的背面，以在形成后接触时保护硅晶片免受变形。至少一个开口被制成电介质层。在开口和电介质层上形成提供背面场的铝触点。铝接触可以通过丝网印刷施加1至12原子％硅的铝浆，然后在750摄氏度下进行热处理。

10. 发明申请

US20060183307A1 Boron diffusion in silicon devices 有权
标题翻译：硅器件中的硼扩散
公开(公告)号：US20060183307A1
公开(公告)日：2006-08-17
申请号：US11301527
申请日：2005-12-13
申请人： Ajeet Rohatgi , Dong Kim , Kenta Nakayashiki , Brian Rounsaville
发明人： Ajeet Rohatgi , Dong Kim , Kenta Nakayashiki , Brian Rounsaville
IPC分类号： H01L21/22
CPC分类号： H01L21/2255 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.
摘要翻译：公开了包括在晶片中硼扩散的工艺，布置和装置的各种实施例。在一个代表性实施例中，提供了一种方法，其中将硼氧化物溶液施加到晶片的表面。此后，晶片经受与第一加热循环相关联的快速加热斜坡，其导致一定量的硼的释放以扩散到晶片中。

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