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1. 发明授权

US6033393A Method and apparatus for overpressure protection of a catheter 失效
标题翻译：导管超压保护方法及装置
公开(公告)号：US6033393A
公开(公告)日：2000-03-07
申请号：US775409
申请日：1996-12-31
申请人： Daniel J. Balbierz , Jack Walker
发明人： Daniel J. Balbierz , Jack Walker
IPC分类号： A61M39/00 , A61M25/00 , A61M39/22 , A61M31/00
CPC分类号： A61M39/22 , A61M2025/0076 , A61M25/0075
摘要： A method and apparatus for overpressure protection of a catheter from an indwelling catheter. A method in one embodiment includes injecting an agent into the catheter and relieving overpressures in the catheter during the injecting step. The agent is typically a declotting agent and the obstruction is typically a clot (e.g., blood clot). In one embodiment of the apparatus, a catheter includes a cannula and a first hub and a second hub, each of which are coupled to the cannula. The first hub is for receiving an agent which is placed into the cannula to remove an obstruction, and the second hub includes an overpressure relief valve for relieving an overpressure condition in the cannula. Other embodiments of the invention are also described.
摘要翻译：一种用于从留置导管超导保护导管的方法和装置。在一个实施方案中的方法包括将药剂注射到导管中并在注射步骤期间释放导管中的超压。该药剂通常是一种去酸剂，阻塞物通常是凝块（例如血块）。在该装置的一个实施例中，导管包括套管和第一轮毂以及第二轮毂，每个毂联接到套管。第一轮毂用于接收放置在套管中以除去障碍物的药剂，并且第二轮毂包括用于缓解套管中的超压状况的超压安全阀。还描述了本发明的其它实施例。

2. 发明授权

US06816528B1 Method and structure for nitride based laser diode arrays on a conducting substrate 有权
标题翻译：导电衬底上基于氮化物的激光二极管阵列的方法和结构
公开(公告)号：US06816528B1
公开(公告)日：2004-11-09
申请号：US09224254
申请日：1998-12-30
申请人： Michael A. Kneissl , David P. Bour , Noble M. Johnson , Jack Walker
发明人： Michael A. Kneissl , David P. Bour , Noble M. Johnson , Jack Walker
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/02276 , H01S5/0425 , H01S5/18 , H01S5/4031
摘要： Method and structure for nitride-based laser diode arrays on a conducting substrate are disclosed. Air-bridge structures are used to make compact laser diode arrays suitable for printer applications. The use of a channel structure architecture allows the making of surface emitting laser diode arrays.
摘要翻译：公开了一种导电衬底上基于氮化物的激光二极管阵列的方法和结构。空气桥结构用于制造适用于打印机应用的紧凑型激光二极管阵列。使用通道结构架构允许制造表面发射激光二极管阵列。

3. 发明授权

US5843802A Semiconductor laser formed by layer intermixing 失效
标题翻译：半导体激光由层间混合形成
公开(公告)号：US5843802A
公开(公告)日：1998-12-01
申请号：US923092
申请日：1997-09-04
申请人： Kevin J. Beernink , Robert L. Thornton , David P. Bour , Thomas L. Paoli , Jack Walker
发明人： Kevin J. Beernink , Robert L. Thornton , David P. Bour , Thomas L. Paoli , Jack Walker
IPC分类号： H01S5/00 , H01L21/18 , H01S5/34 , H01S5/343 , H01S5/40 , H01S3/18 , H01S3/19
CPC分类号： B82Y20/00 , H01L21/182 , H01S5/34 , H01S5/4043 , H01S5/3413 , H01S5/3414 , H01S5/3432 , H01S5/34326 , H01S5/4087
摘要： A method for fabricating a multiple layer semiconductor device, such as a laser, using impurity-induced, or vacancy-enhanced, intermixing of semiconductor layers to selectively inactivate quantum well regions in the device.
摘要翻译：一种用于制造诸如激光器的多层半导体器件的方法，其使用杂质诱导或空穴增强的半导体层的混合来选择性地使器件中的量子阱区域失活。

4. 外观设计

USD422193S Tool handle extension 失效
公开(公告)号：USD422193S
公开(公告)日：2000-04-04
申请号：US108889
申请日：1999-08-05
申请人： Jack Walker
设计人： Jack Walker

5. 发明授权

US06744800B1 Method and structure for nitride based laser diode arrays on an insulating substrate 有权
标题翻译：绝缘基板上基于氮化物的激光二极管阵列的方法和结构
公开(公告)号：US06744800B1
公开(公告)日：2004-06-01
申请号：US09223112
申请日：1998-12-30
申请人： Michael A. Kneissl , Thomas L. Paoli , David P. Bour , Noble M. Johnson , Jack Walker
发明人： Michael A. Kneissl , Thomas L. Paoli , David P. Bour , Noble M. Johnson , Jack Walker
IPC分类号： H01S500
CPC分类号： H01L21/6835 , B82Y20/00 , H01L21/2007 , H01L27/153 , H01L33/0079 , H01L2221/68359 , H01L2221/68368 , H01L2224/83192 , H01L2224/83895 , H01L2924/01079 , H01S5/0217 , H01S5/34333 , H01S5/4025 , H01S5/4031
摘要： A method and structure for nitride based laser diode arrays on an insulating substrate is described. Various contact layouts are used to reduce electrical and thermal crosstalk between laser diodes in the array. A channel structure is used to make a surface emitting laser diode while maintaining a simple contact structure. Buried layers are used to provide a compact and low crosstalk contact structure for the laser diode array.
摘要翻译：描述了绝缘基板上的基于氮化物的激光二极管阵列的方法和结构。使用各种接触布局来减少阵列中的激光二极管之间的电和热串扰。通道结构用于制造表面发射激光二极管，同时保持简单的接触结构。掩埋层用于为激光二极管阵列提供紧凑且低串扰的接触结构。

6. 发明授权

US6090300A Ion-implantation assisted wet chemical etching of III-V nitrides and alloys 失效
标题翻译： III-V氮化物和合金的离子注入辅助湿化学蚀刻
公开(公告)号：US6090300A
公开(公告)日：2000-07-18
申请号：US84223
申请日：1998-05-26
申请人： Jack Walker , Werner Goetz , Noble M. Johnson , David P. Bour , Thomas L. Paoli
发明人： Jack Walker , Werner Goetz , Noble M. Johnson , David P. Bour , Thomas L. Paoli
IPC分类号： H01L33/00 , H01S5/20 , H01S5/323 , H01L21/3115 , B44C1/22
CPC分类号： H01L33/007 , H01S5/2081 , H01S5/32341
摘要： A process for etching III-V nitride and III-V nitride alloy materials first implants selected regions of the materials with ions and then selectively etches the implanted regions in an etching liquid, such as an aqueous base. The etch depth is controlled by the energy, mass and dose of the implanted ions.
摘要翻译：蚀刻III-V族氮化物和III-V族氮化物合金材料的方法首先用离子注入材料的选定区域，然后选择性地蚀刻蚀刻液体（例如碱水溶液）中的注入区域。蚀刻深度由注入离子的能量，质量和剂量控制。

7. 发明授权

US5123417A Apparatus and method for displaying ultrasonic data 失效
标题翻译：用于显示超声波数据的装置和方法
公开(公告)号：US5123417A
公开(公告)日：1992-06-23
申请号：US555985
申请日：1990-07-19
申请人： Jack Walker , Quang Ton , John Geis , John Schultz , Richard Lee
发明人： Jack Walker , Quang Ton , John Geis , John Schultz , Richard Lee
IPC分类号： A61B8/06 , A61B8/08 , G01S7/52 , G01S15/89
CPC分类号： A61B8/463 , G01S15/8979 , G01S7/52071 , A61B8/06 , A61B8/08 , A61B8/13 , A61B8/488
摘要： The method of the present invention comprises displaying an image comprising reflected pulsed doppler signals in real time produced by reflecting a reference pulsed doppler signal, each reflected signal displayed in a color defined by a polar coordinate plot, wherein the polar coordinate plot comprises an origin representing reflected signals of the reference pulsed doppler signal having zero amplitude and zero frequency. The polar coordinate plot further comprises an axis representing reflected signals of the reference pulsed doppler signal having zero frequency, a radius with respect to the origin representing amplitude information of reflected signals of the reference pulsed doppler signal, an angle with respect to the axis representing the frequency of reflected signals of the reference pulsed doppler signal, and a vector displaced 180 degrees from the axis, the vector representing a Nyquist limit of the reference pulsed doppler signal. The colors on the plot in a positive direction at a maximum amplitude for a first frequency towards a point representing maximum amplitude for a second frequency range from a first color to a second color, colors on the plot in a negative direction at a maximum amplitude for a third frequency towards a point for a maximum amplitude for a fourth frequency range from a third color to a fourth color, and the colors for each frequency on the plot range from the color at a maximum amplitude for each frequency to a fifth color at the origin.
摘要翻译：本发明的方法包括：通过反射参考脉冲多普勒信号实时产生包括反射脉冲多普勒信号的图像，每个反射信号以由极坐标图定义的颜色显示，其中极坐标图包括代表具有零幅度和零频率的参考脉冲多普勒信号的反射信号。极坐标图还包括表示具有零频率的参考脉冲多普勒信号的反射信号的轴，相对于表示参考脉冲多普勒信号的反射信号的幅度信息的原点的半径，相对于表示参考脉冲多普勒信号的反射信号的频率以及从轴离开180度的矢量，该矢量表示参考脉冲多普勒信号的奈奎斯特极限。图中的颜色在正方向上以第一频率朝向表示从第一颜色到第二颜色的第二频率范围的最大幅度的点的最大幅度，在最大幅度的负方向上的图上的颜色对于从第三颜色到第四颜色的第四频率范围的最大幅度的点的第三频率，以及在每个频率的最大幅度上的颜色的每个频率上的每个频率的颜色，起源。

8. 发明授权

US06355497B1 Removable large area, low defect density films for led and laser diode growth 有权
标题翻译：用于LED和激光二极管生长的可拆卸大面积，低缺陷密度膜
公开(公告)号：US06355497B1
公开(公告)日：2002-03-12
申请号：US09490286
申请日：2000-01-18
申请人： Linda T. Romano , Brent S. Krusor , Christopher L. Chua , Noble M. Johnson , Rose M. Wood , Jack Walker
发明人： Linda T. Romano , Brent S. Krusor , Christopher L. Chua , Noble M. Johnson , Rose M. Wood , Jack Walker
IPC分类号： H01L2100
CPC分类号： H01L33/007 , H01L21/02373 , H01L21/0242 , H01L21/02532 , H01L33/0079
摘要： A technique based on etching a release layer, for separating the nearly lattice matched substrate from a base substrate is disclosed. A nearly lattice matched substrate for the epitaxial growth of Group-III nitride semiconductor devices and method of fabricating the nearly lattice matched substrate and devices is disclosed. Enhanced ELOG methods are used to create low defect density GaN films. The GaN films are used to grow Group-III nitride LEDs and laser diodes.
摘要翻译：公开了一种基于蚀刻释放层的技术，用于将近乎格子匹配的基板与基底基板分离。公开了用于III族氮化物半导体器件的外延生长的几乎晶格匹配的衬底以及制造近晶格匹配衬底和器件的方法。增强的ELOG方法用于产生低缺陷密度GaN膜。 GaN薄膜用于生长III族氮化物LED和激光二极管。

9. 发明授权

US5708674A Semiconductor laser or array formed by layer intermixing 失效
标题翻译：半导体激光器或由层间混合形成的阵列
公开(公告)号：US5708674A
公开(公告)日：1998-01-13
申请号：US367554
申请日：1995-01-03
申请人： Kevin J. Beernink , Robert L. Thornton , David P. Bour , Thomas L. Paoli , Jack Walker
发明人： Kevin J. Beernink , Robert L. Thornton , David P. Bour , Thomas L. Paoli , Jack Walker
IPC分类号： H01S5/00 , H01L21/18 , H01S5/34 , H01S5/343 , H01S5/40 , H01S3/19
CPC分类号： B82Y20/00 , H01L21/182 , H01S5/34 , H01S5/4043 , H01S5/3413 , H01S5/3414 , H01S5/3432 , H01S5/34326 , H01S5/4087
摘要： A fabrication process and several structures for an index-guided laser diode formed by IILD or for a multiple wavelength laser array containing stacked semi-conductive active layers with quantum wells. The laser wavelength is varied laterally by effectively inactivating quantum wells which have transition wavelengths longer than that desired in the selected portion of the device. The quantum wells are inactivated by intermixing them with the surrounding high band gap semiconductor layers. To accomplish this intermixing without affecting the active layer in nearby regions, a finite source of impurity inducing or promoting intermixing is located in proximity to the quantum well to be intermixed, and the sample is annealed under conditions which allow for lateral patterning of the impurity-induced intermixing. Alternatively, the body is capped over the quantum well to be inactivated with a material which induces vacancies in semi-conductive material during thermal annealing, thus promoting vacancy-enhanced intermixing of the undesired quantum well. The intermixing can also be brought about by patterned annealing or selective laser heating which produces local annealing, or by use of two different caps. For the index-guided laser diode, the flanking index-guiding regions are formed by IILD from a buried impurity source, in which surface conditions are controlled to promote impurity diffusion to the flanking regions but not to the active stripe region between the flanking regions.
摘要翻译：用于由IILD或包含具有量子阱的堆叠半导电有源层的多波长激光器阵列形成的折射率引导激光二极管的制造工艺和若干结构。通过有效地使具有比器件所选部分中所需要的转换波长更长的量子阱来激活激光波长。量子阱通过将它们与周围的高带隙半导体层混合而失活。为了实现这种混合而不影响附近区域中的有源层，杂质诱导或促进混合的有限源位于量子阱附近，以便混合，并且样品在允许杂质 - 诱导混合。或者，通过在热退火期间在半导电材料中引起空位的材料将物体盖在量子阱上以使其失活，从而促进不期望的量子阱的空位增强的混合。混合还可以通过图案化退火或选择性激光加热产生局部退火，或通过使用两个不同的盖来实现。对于折射率引导激光二极管，侧翼引导区域由埋藏杂质源的IILD形成，其中控制表面条件以促进杂质扩散到侧翼区域而不是侧向区域之间的有源条纹区域。

10. 发明授权

US5361555A Electromagnetic patch for tank repair 失效
标题翻译：油箱维修电磁补丁
公开(公告)号：US5361555A
公开(公告)日：1994-11-08
申请号：US56475
申请日：1993-05-03
申请人： Jack Walker
发明人： Jack Walker
IPC分类号： B65D90/00 , B65D90/22 , E04G23/02 , E02D37/00
CPC分类号： B65D90/22 , B65D90/00 , Y10S206/818 , Y10S52/04
摘要： A device for patching chemical tanks or tank cars comprised of a housing, at least a pair of electromagnets, and a seal which is secured to a pressure system which is secured to the housing, wherein the pressure system permits the seal to be extended from the housing against the surface of a tank or tank car.
摘要翻译：一种用于修补化学罐或罐车的装置，包括壳体，至少一对电磁体和固定到固定到壳体的压力系统的密封件，其中压力系统允许密封件从抵靠坦克或坦克车的表面。

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