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1. 发明申请

US20120049383A1 Re-Establishing Surface Characteristics of Sensitive Low-K Dielectrics in Microstructure Devices by Using an In Situ Surface Modification 有权
标题翻译：通过使用原位表面改性重新建立微结构器件中敏感的低K电介质的表面特性
公开(公告)号：US20120049383A1
公开(公告)日：2012-03-01
申请号：US13178587
申请日：2011-07-08
申请人： Matthias Schaller , Daniel Fischer , Thomas Oszinda
发明人： Matthias Schaller , Daniel Fischer , Thomas Oszinda
IPC分类号： H01L23/48 , H01L21/302
CPC分类号： H01L21/3105 , H01L21/02126 , H01L21/76814 , H01L21/76826
摘要： Patterning-induced damage of sensitive low-k dielectric materials in semiconductors devices may be restored to a certain degree on the basis of a surface treatment that is performed prior to exposing the device to ambient atmosphere. To this end, the dangling silicon bonds of the silicon oxide-based low-k dielectric material may be saturated in a confined process environment, thereby providing superior surface conditions for the subsequent application of an appropriate repair chemistry.
摘要翻译：基于在将装置暴露于环境气氛之前执行的表面处理，半导体器件中敏感的低k介电材料的图案化诱导的损伤可以恢复到一定程度。为此，基于氧化硅的低k介电材料的悬挂硅键可在受限制的工艺环境中饱和，从而为后续应用适当的修复化学品提供优异的表面条件。

2. 发明授权

US07986040B2 Method of reducing erosion of a metal cap layer during via patterning in semiconductor devices 有权
标题翻译：在半导体器件中通孔图案化期间减少金属覆盖层侵蚀的方法
公开(公告)号：US07986040B2
公开(公告)日：2011-07-26
申请号：US12397661
申请日：2009-03-04
申请人： Christin Bartsch , Daniel Fischer , Matthias Schaller
发明人： Christin Bartsch , Daniel Fischer , Matthias Schaller
IPC分类号： H01L23/522
CPC分类号： H01L21/76844 , H01L21/76805 , H01L21/76807 , H01L21/76814 , H01L21/76834 , H01L21/76883
摘要： During the patterning of via openings in sophisticated metallization systems of semi-conductor devices, the opening may extend through a conductive cap layer and an appropriate ion bombardment may be established to redistribute material of the underlying metal region to exposed sidewall portions of the conductive cap layer, thereby establishing a protective material. Consequently, in a subsequent wet chemical etch process, the probability for undue material removal of the conductive cap layer may be greatly reduced.
摘要翻译：在半导体器件的复杂金属化系统中的通孔开口的图案化期间，开口可以延伸穿过导电盖层，并且可以建立适当的离子轰击以将下面的金属区域的材料重新分布到导电盖层的暴露的侧壁部分，从而建立保护材料。因此，在随后的湿式化学蚀刻工艺中，导电盖层过度去除材料的可能性可能会大大降低。

3. 发明申请

US20100301494A1 RE-ESTABLISHING A HYDROPHOBIC SURFACE OF SENSITIVE LOW-K DIELECTRICS IN MICROSTRUCTURE DEVICES 审中-公开
标题翻译：在微结构器件中重新建立敏感低K电介质的疏水表面
公开(公告)号：US20100301494A1
公开(公告)日：2010-12-02
申请号：US12786117
申请日：2010-05-24
申请人： Matthias Schaller , Thomas Oszinda , Susanne Leppack , Daniel Fischer
发明人： Matthias Schaller , Thomas Oszinda , Susanne Leppack , Daniel Fischer
IPC分类号： H01L23/48 , H01L21/71 , H01L21/02
CPC分类号： H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L21/76831
摘要： Silicon oxide based low-k dielectric materials may be provided with a hydrophobic low-k surface area, even after exposure to a reactive process ambient, by performing a surface treatment on the basis of hexamethylcyclotrisilazane and/or octamethylcyclotetrasilazane. In addition to the surface treatment, a polymerization may be initiated on the basis of a hydrophobic surface nature of the silicon-based dielectric material, thereby increasing the chemical stability during the further processing.
摘要翻译：通过基于六甲基环三硅氮烷和/或八甲基环四硅氮烷进行表面处理，即使在暴露于反应性工艺环境中之后，也可以提供基于氧化硅的低k电介质材料的疏水性低k表面积。除了表面处理之外，可以基于硅基介电材料的疏水表面性质开始聚合，从而在进一步加工期间增加化学稳定性。

4. 发明授权

US08399358B2 Establishing a hydrophobic surface of sensitive low-k dielectrics of microstructure devices by in situ plasma treatment 有权
标题翻译：通过原位等离子体处理建立微结构器件敏感低k电介质的疏水表面
公开(公告)号：US08399358B2
公开(公告)日：2013-03-19
申请号：US12786829
申请日：2010-05-25
申请人： Daniel Fischer , Matthias Schaller
发明人： Daniel Fischer , Matthias Schaller
IPC分类号： H01L21/44
CPC分类号： H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L21/76829
摘要： Silicon oxide based low-k dielectric materials may receive superior hydrophobic surface characteristics on the basis of a plasma treatment using hydrogen and carbon containing radicals. For this purpose, the surface of the low-k dielectric material may be exposed to these radicals, at least in one in situ process in combination with another reactive plasma ambient, for instance used for patterning the low-k dielectric material. Consequently, superior surface characteristics may be established or re-established without significantly contributing to product cycle time.
摘要翻译：基于使用氢和含碳基团的等离子体处理，基于氧化硅的低k电介质材料可以获得优异的疏水表面特性。为此，低k电介质材料的表面可以暴露于这些自由基，至少在一个原位工艺中与另一个反应性等离子体环境组合，例如用于图案化低k电介质材料。因此，可以建立或重新建立优异的表面特性，而不显着地促成产品周期时间。

5. 发明授权

US08062982B2 High yield plasma etch process for interlayer dielectrics 有权
标题翻译：用于层间电介质的高产量等离子体蚀刻工艺
公开(公告)号：US08062982B2
公开(公告)日：2011-11-22
申请号：US11867972
申请日：2007-10-05
申请人： Daniel Fischer , Matthias Schaller , Matthias Lehr , Kornelia Dittmar
发明人： Daniel Fischer , Matthias Schaller , Matthias Lehr , Kornelia Dittmar
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/02063 , H01L21/0209 , H01L21/31138
摘要： A high yield plasma etch process for an interlayer dielectric layer of a semiconductor device is provided, according to an embodiment of which a dielectric layer is etched with a nitrogen-containing plasma. In this way, the formation of polymers on a backside bevel of a substrate is avoided or substantially reduced. Remaining polymer at the backside bevel can be removed in situ by post-etch treatment. Further, a plasma etching device is provided comprising a chamber, a substrate receiving space for receiving a substrate, a plasma generator for generating a plasma in the chamber and a temperature conditioner for conditioning a temperature at an outer circumferential region of the substrate receiving space and thereby minimizing temperature gradients at a bevel of the wafer.
摘要翻译：提供了一种用于半导体器件的层间电介质层的高产量等离子体蚀刻工艺，根据其实施例，用含氮等离子体蚀刻电介质层。以这种方式，避免或显着减少在基板的背面斜面上形成聚合物。通过后蚀刻处理可以将位于后侧斜面处的剩余聚合物原位移除。此外，提供了一种等离子体蚀刻装置，其包括腔室，用于接收衬底的衬底接收空间，用于在腔室中产生等离子体的等离子体发生器和用于调节衬底接收空间的外周区域处的温度的温度调节器，从而最小化晶片斜面处的温度梯度。

6. 发明申请

US20100304566A1 ESTABLISHING A HYDROPHOBIC SURFACE OF SENSITIVE LOW-K DIELECTRICS OF MICROSTRUCTURE DEVICES BY IN SITU PLASMA TREATMENT 有权
标题翻译：通过等离子体处理建立微结构器件的敏感低K电介质的疏水表面
公开(公告)号：US20100304566A1
公开(公告)日：2010-12-02
申请号：US12786829
申请日：2010-05-25
申请人： Daniel Fischer , Matthias Schaller
发明人： Daniel Fischer , Matthias Schaller
IPC分类号： H01L21/768 , H01L21/31
CPC分类号： H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L21/76829
摘要： Silicon oxide based low-k dielectric materials may receive superior hydrophobic surface characteristics on the basis of a plasma treatment using hydrogen and carbon containing radicals. For this purpose, the surface of the low-k dielectric material may be exposed to these radicals, at least in one in situ process in combination with another reactive plasma ambient, for instance used for patterning the low-k dielectric material. Consequently, superior surface characteristics may be established or re-established without significantly contributing to product cycle time.
摘要翻译：基于使用氢和含碳基团的等离子体处理，基于氧化硅的低k电介质材料可以获得优异的疏水表面特性。为此，低k电介质材料的表面可以暴露于这些自由基，至少在一个原位工艺中与另一个反应性等离子体环境组合，例如用于图案化低k电介质材料。因此，可以建立或重新建立优异的表面特性，而不显着地促成产品周期时间。

7. 发明申请

US20100248498A1 MATERIAL STRIPPING IN SEMICONDUCTOR DEVICES BY EVAPORATION 审中-公开
标题翻译：通过蒸发在半导体器件中的材料剥离
公开(公告)号：US20100248498A1
公开(公告)日：2010-09-30
申请号：US12750042
申请日：2010-03-30
申请人： Petra Hetzer , Matthias Schaller , Daniel Fischer
发明人： Petra Hetzer , Matthias Schaller , Daniel Fischer
IPC分类号： H01L21/263 , B23K26/36
CPC分类号： H01L21/268 , H01L21/31127 , H01L21/31138 , H01L21/67115 , H01L29/6659
摘要： A sacrificial material, such as resist material, polymer material, organic residues and the like, may be efficiently removed from a surface of a semiconductor device by evaporating the material under consideration, which may, for instance, be accomplished by energy deposition. For example, a laser beam may be scanned across the surface to be treated so as to evaporate the sacrificial material, such as resist material, while significantly reducing any negative effects on other materials such as dielectrics, metals, semiconductive materials and the like. Moreover, by selecting an appropriate scan regime, a locally selective removal of material may be accomplished in a highly efficient manner.
摘要翻译：通过蒸发考虑的材料，可以有效地从半导体器件的表面去除牺牲材料，例如抗蚀剂材料，聚合物材料，有机残余物等，其可以例如通过能量沉积来实现。例如，激光束可以跨越要处理的表面进行扫描，以便蒸发诸如抗蚀剂材料的牺牲材料，同时显着地减少对诸如电介质，金属，半导体材料等的其它材料的任何负面影响。此外，通过选择适当的扫描方式，可以以高效的方式实现局部选择性去除材料。

8. 发明授权

US08440579B2 Re-establishing surface characteristics of sensitive low-k dielectrics in microstructure device by using an in situ surface modification 有权
标题翻译：通过使用原位表面改性，在微结构器件中重新建立敏感的低k电介质的表面特性
公开(公告)号：US08440579B2
公开(公告)日：2013-05-14
申请号：US13178587
申请日：2011-07-08
申请人： Matthias Schaller , Daniel Fischer , Thomas Oszinda
发明人： Matthias Schaller , Daniel Fischer , Thomas Oszinda
IPC分类号： H01L21/31
CPC分类号： H01L21/3105 , H01L21/02126 , H01L21/76814 , H01L21/76826
摘要： Patterning-induced damage of sensitive low-k dielectric materials in semiconductors devices may be restored to a certain degree on the basis of a surface treatment that is performed prior to exposing the device to ambient atmosphere. To this end, the dangling silicon bonds of the silicon oxide-based low-k dielectric material may be saturated in a confined process environment, thereby providing superior surface conditions for the subsequent application of an appropriate repair chemistry.
摘要翻译：基于在将装置暴露于环境气氛之前执行的表面处理，半导体器件中敏感的低k介电材料的图案化诱导的损伤可以恢复到一定程度。为此，基于氧化硅的低k介电材料的悬挂硅键可在受限制的工艺环境中饱和，从而为后续应用适当的修复化学品提供优异的表面条件。

9. 发明申请

US20130072018A1 Repair of Damaged Surface Areas of Sensitive Low-K Dielectrics of Microstructure Devices After Plasma Processing by In Situ Treatment 有权
标题翻译：通过原位处理等离子体处理后微结构器件敏感低K电介质损伤表面区域的修复
公开(公告)号：US20130072018A1
公开(公告)日：2013-03-21
申请号：US13233590
申请日：2011-09-15
申请人： Matthias Schaller , Daniel Fischer , Thomas Oszinda
发明人： Matthias Schaller , Daniel Fischer , Thomas Oszinda
IPC分类号： H01L21/768 , H01L21/3105
CPC分类号： H01L21/3105 , H01L21/02126 , H01L21/02203 , H01L21/31116 , H01L21/76814 , H01L21/76826
摘要： Damaged surface areas of low-k dielectric materials may be efficiently repaired by avoiding the saturation of dangling silicon bonds after a reactive plasma treatment on the basis of OH groups, as is typically applied in conventional process strategies. The saturation of the dangling bond may be accomplished by directly initiating a chemical reaction with appropriate organic species, thereby providing superior reaction conditions, which in turn results in a more efficient restoration of the dielectric characteristics.
摘要翻译：通过在常规工艺策略中通常应用的反应性等离子体处理后，通过避免在反应等离子体处理之后的悬挂硅键的饱和，可以有效地修复低k电介质材料的损坏的表面积。悬挂键的饱和可以通过直接引发与合适的有机物质的化学反应来实现，从而提供优异的反应条件，这又导致更有效的电介质特性的恢复。

10. 发明申请

US20120003832A1 METHOD OF REDUCING EROSION OF A METAL CAP LAYER DURING VIA PATTERNING IN SEMICONDUCTOR DEVICES 有权
标题翻译：通过半导体器件中的方式减少金属层的腐蚀的方法
公开(公告)号：US20120003832A1
公开(公告)日：2012-01-05
申请号：US13109639
申请日：2011-05-17
申请人： Christin Bartsch , Daniel Fischer , Matthias Schaller
发明人： Christin Bartsch , Daniel Fischer , Matthias Schaller
IPC分类号： H01L21/28 , H01L21/306
CPC分类号： H01L21/76844 , H01L21/76805 , H01L21/76807 , H01L21/76814 , H01L21/76834 , H01L21/76883
摘要： During the patterning of via openings in sophisticated metallization systems of semiconductor devices, the opening may extend through a conductive cap layer and an appropriate ion bombardment may be established to redistribute material of the underlying metal region to exposed sidewall portions of the conductive cap layer, thereby establishing a protective material. Consequently, in a subsequent wet chemical etch process, the probability for undue material removal of the conductive cap layer may be greatly reduced.
摘要翻译：在半导体器件的复杂金属化系统中的通路开口的图案化期间，开口可以延伸穿过导电盖层，并且可以建立适当的离子轰击以将下面的金属区域的材料重新分布到导电盖层的暴露的侧壁部分，由此建立保护材料。因此，在随后的湿式化学蚀刻工艺中，导电盖层过度去除材料的可能性可能会大大降低。

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