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1. 发明授权

US06670921B2 Low-cost HDMI-D packaging technique for integrating an efficient reconfigurable antenna array with RF MEMS switches and a high impedance surface 有权
标题翻译：低成本HDMI-D封装技术，用于将高效可重构天线阵列与RF MEMS开关和高阻抗表面集成
公开(公告)号：US06670921B2
公开(公告)日：2003-12-30
申请号：US09906035
申请日：2001-07-13
申请人： Daniel F. Sievenpiper , Adele E. Schmitz , James H. Schaffner , Gregory L. Tangonan , Tsung-Yuan Hsu , Robert Y. Loo , Robert S. Miles
发明人： Daniel F. Sievenpiper , Adele E. Schmitz , James H. Schaffner , Gregory L. Tangonan , Tsung-Yuan Hsu , Robert Y. Loo , Robert S. Miles
IPC分类号： H01Q138
CPC分类号： H01P1/2005 , H01Q1/38 , H01Q15/0066 , H01Q15/008
摘要： A flexible antenna array comprises a plurality of layers of thin metal and a flexible insulating medium arranged as a sandwich of layers. Each layer of the sandwich is patterned as needed to define: (i) antenna segments patterned in one of the metal layers, (ii) an array of metallic top elements formed in a layer spaced from the the antenna segments, the array of metallic top elements being patterned in another metal layer, (iii) a metallic ground plane formed in a layer spaced from the array of metallic top elements, the metallic ground plane having been formed from still another metal layer, and (iv) inductive elements coupling each of the top elements in the array of metallic top elements with said ground plan. An array of remotely controlled switches are provided for coupling selected ones of said antenna segments together.
摘要翻译：柔性天线阵列包括多层薄金属和布置为层间夹层的柔性绝缘介质。夹层的每个层根据需要被图案化以限定：（i）在金属层之一中图案化的天线段，（ii）形成在与天线段间隔开的层中的金属顶部元件阵列，金属顶部阵列元件在另一金属层中被图案化，（iii）金属接地平面，其形成在与金属顶部元件阵列间隔开的层中，金属接地平面已由另一金属层形成，以及（iv）金属顶部元素阵列中的顶部元素具有所述平面图。提供了一组遥控开关，用于将选定的天线段耦合在一起。

2. 发明授权

US07053737B2 Stress bimorph MEMS switches and methods of making same 失效
公开(公告)号：US07053737B2
公开(公告)日：2006-05-30
申请号：US10251677
申请日：2002-09-19
申请人： Robert N. Schwartz , Ming Wu , Tsung-Yuan Hsu , Adele E. Schmitz , Robert Y. Loo , James H. Schaffner , Gregory L. Tangonan
发明人： Robert N. Schwartz , Ming Wu , Tsung-Yuan Hsu , Adele E. Schmitz , Robert Y. Loo , James H. Schaffner , Gregory L. Tangonan
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , H01G5/18 , H01G5/40 , H01H1/20 , H01H2059/0018 , H01H2059/0072 , H01H2059/0081
摘要： A micro-electromechanical system (MEMS) switch formed on a substrate, the switch comprising a transmission line formed on the substrate, a substrate electrostatic plate formed on the substrate, and an actuating portion. The actuating portion comprises a cantilever anchor formed on the substrate and a cantilevered actuator arm extending from the cantilever anchor. Attraction of the actuator arm toward the substrate brings an electrical contact into engagement with the portions of the transmission line separated by a gap, thus bridging the transmission line gap and closing the circuit. In order to maximize electrical isolation between the transmission line and the electrical contact in an OFF-state while maintaining a low actuation voltage, the actuator arm is bent such that the minimum separation distance between the transmission line and the electrical contact is equal to or greater than the maximum separation distance between the substrate electrostatic plate and arm electrostatic plate.

3. 发明授权

US06440767B1 Monolithic single pole double throw RF MEMS switch 失效
标题翻译：单片双极射频MEMS开关
公开(公告)号：US06440767B1
公开(公告)日：2002-08-27
申请号：US09767321
申请日：2001-01-23
申请人： Robert Y. Loo , James H. Schaffner , Adele E. Schmitz , Tsung-Yuan Hsu , Franklin A. Dolezal , Gregory L. Tangonan
发明人： Robert Y. Loo , James H. Schaffner , Adele E. Schmitz , Tsung-Yuan Hsu , Franklin A. Dolezal , Gregory L. Tangonan
IPC分类号： H01L2100
CPC分类号： H01H59/0009
摘要： Apparatus for a micro-electro-mechanical switch that provides single pole, double throw switching action. The switch comprises a single RF input line and two RF output lines. The switch additionally comprises two armatures, each mechanically connected to a substrate at one end and having a conducting transmission line at the other end with a suspended biasing electrode located on top of or within a structural layer of the armature. Each conducting transmission line has conducting dimples that protrude beyond the bottom of the armature carrying the conducting transmission line. Closure of an armature causes the dimples of the corresponding conducting transmission line to mechanically and electrically engage the RF input line and the corresponding RF output line, thus directing RF energy from the RF input line to the selected RF output line.
摘要翻译：用于微机电开关的装置，其提供单极双掷切换动作。该开关包括单个RF输入线和两个RF输出线。开关另外包括两个电枢，每个电枢在一端机械地连接到基板，并且在另一端处具有导电传输线，其中悬置的偏置电极位于电枢的结构层的顶部或内部。每个导电传输线具有突出超过承载导电传输线的电枢的底部的导电凹坑。衔铁的闭合使相应的导电传输线的凹坑机械地和电气地接合RF输入线和相应的RF输出线，从而将RF能量从RF输入线引导到所选择的RF输出线。

4. 发明授权

US06667245B2 CMOS-compatible MEM switches and method of making 失效
公开(公告)号：US06667245B2
公开(公告)日：2003-12-23
申请号：US10016894
申请日：2001-12-13
申请人： Lap-Wai Chow , Tsung-Yuan Hsu , Daniel J. Hyman , Robert Y. Loo , Paul Ouyang , James H. Schaffner , Adele Schmitz , Robert N. Schwartz
发明人： Lap-Wai Chow , Tsung-Yuan Hsu , Daniel J. Hyman , Robert Y. Loo , Paul Ouyang , James H. Schaffner , Adele Schmitz , Robert N. Schwartz
IPC分类号： H01L2100
CPC分类号： B81C1/00246 , B81B2201/014 , B81C2201/014 , B81C2203/0714 , B81C2203/0735 , H01H1/58 , H01H59/0009 , H01H2001/0057
摘要： A microelectromechanical (MEM) switch is fabricated inexpensively by using processing steps which are standard for fabricating multiple metal layer integrated circuits, such as CMOS. The exact steps may be adjusted to be compatible with the process of a particular foundry, resulting in a device which is both low cost and readily integrable with other circuits. The processing steps include making contacts for the MEM switch from metal plugs which are ordinarily used as vias to connect metal layers which are separated by a dielectric layer. Such contact vias are formed on either side of a sacrificial metallization area, and then the interconnect metallization is removed from between the contact vias, leaving them separated. Dielectric surrounding the contacts is etched back so that they protrude toward each other. Thus, when the contacts are moved toward each other by actuating the MEM switch, they connect firmly without obstruction. Tungsten is typically used to form vias in CMOS processes, and it makes an excellent contact material, but other via metals may also be employed as contacts. Interconnect metallization may be employed for other structural and interconnect needs of the MEM switch, and is preferably standard for the foundry and process used. Various metals and dielectric materials may be used to create the switches, but in a preferred embodiment the interconnect metal layers are aluminum and the dielectric material is SiO2, materials which are fully compatible with standard four-layer CMOS fabrication processes.

5. 发明授权

US06469677B1 Optical network for actuation of switches in a reconfigurable antenna 有权
标题翻译：用于在可重新配置的天线中启动开关的光网络
公开(公告)号：US06469677B1
公开(公告)日：2002-10-22
申请号：US09870294
申请日：2001-05-30
申请人： James H. Schaffner , Tsung-Yuan Hsu , Robert Y. Loo
发明人： James H. Schaffner , Tsung-Yuan Hsu , Robert Y. Loo
IPC分类号： H01Q324
CPC分类号： H01Q21/062 , H01Q9/14 , H01Q9/16 , H01Q21/0006
摘要： Method and apparatus for actuating switches in a reconfigurable antenna array. Micro electro-mechanical system (MEMS) switches span gaps between antenna elements disposed on an antenna substrate. An integrated optic waveguide network which directs optical energy towards the MEMS switches is contained in a superstrate disposed above the antenna elements and substrate. The MEMS switches are formed on a semi-insulating substrate. When illuminated, the resistance of the semi-insulating substrate is lowered so as the reduce the resistance between the control contacts. The antenna array is reconfigured by directing optical energy to the photo-voltaic cells connected to selected MEMS switches to close those MEMS switches, thereby electrically connecting selected antenna elements and by directing optical energy to the semi-insulating substrate of selected MEMS switches to open those MEMS switches, thereby electrically disconnecting selected antenna elements.
摘要翻译：用于在可重构天线阵列中启动开关的方法和装置。微电子机械系统（MEMS）开关跨越设置在天线基板上的天线元件之间的间隙。将光能引导到MEMS开关的集成光波导网络被包含在设置在天线元件和衬底之上的衬底中。 MEMS开关形成在半绝缘基板上。当照明时，半绝缘基板的电阻降低，从而降低控制触点之间的电阻。通过将光能引导到连接到选定的MEMS开关的光伏电池来重新配置天线阵列，以关闭那些MEMS开关，从而电连接所选择的天线元件，并通过将光能引导到所选择的MEMS开关的半绝缘衬底以打开那些 MEMS开关，从而电气断开选定的天线元件。

6. 发明授权

US06396368B1 CMOS-compatible MEM switches and method of making 失效
标题翻译： CMOS兼容MEM开关及制作方法
公开(公告)号：US06396368B1
公开(公告)日：2002-05-28
申请号：US09438085
申请日：1999-11-10
申请人： Lap-Wai Chow , Tsung-Yuan Hsu , Daniel J. Hyman , Robert Y. Loo , Paul Ouyang , James H. Schaffner , Adele Schmitz , Robert N. Schwartz
发明人： Lap-Wai Chow , Tsung-Yuan Hsu , Daniel J. Hyman , Robert Y. Loo , Paul Ouyang , James H. Schaffner , Adele Schmitz , Robert N. Schwartz
IPC分类号： H01P110
CPC分类号： B81C1/00246 , B81B2201/014 , B81C2201/014 , B81C2203/0714 , B81C2203/0735 , H01H1/58 , H01H59/0009 , H01H2001/0057
摘要： A microelectromechanical (MEM) switch is fabricated inexpensively by using processing steps which are standard for fabricating multiple metal layer integrated circuits, such as CMOS. The exact steps may be adjusted to be compatible with the process of a particular foundry, resulting in a device which is both low cost and readily integrable with other circuits. The processing steps include making contacts for the MEM switch from metal plugs which are ordinarily used as vias to connect metal layers which are separated by a dielectric layer. Such contact vias are formed on either side of a sacrificial metallization area, and then the interconnect metallization is removed from between the contact vias, leaving them separated. Dielectric surrounding the contacts is etched back so that they protrude toward each other. Thus, when the contacts are moved toward each other by actuating the MEM switch, they connect firmly without obstruction. Tungsten is typically used to form vias in CMOS processes, and it makes an excellent contact material, but other via metals may also be employed as contacts. Interconnect metallization may be employed for other structural and interconnect needs of the MEM switch, and is preferably standard for the foundry and process used. Various metals and dielectric materials may be used to create the switches, but in a preferred embodiment the interconnect metal layers are aluminum and the dielectric material is SiO2, materials which are fully compatible with standard four-layer CMOS fabrication processes.
摘要翻译：通过使用标准制造多个金属层集成电路（如CMOS）的处理步骤，廉价地制造了微机电（MEM）开关。可以将精确的步骤调整为与特定代工厂的过程兼容，从而导致低成本且易于与其他电路集成的装置。处理步骤包括通过通常用作通孔的金属插头进行MEM开关的接触，以连接由电介质层分离的金属层。这种接触通孔形成在牺牲金属化区域的任一侧，然后从接触通孔之间移除互连金属化，使它们分离。围绕触点的介质被回蚀，使得它们彼此突出。因此，当通过致动MEM开关使触点彼此移动时，它们牢固地连接而不阻塞。钨通常用于在CMOS工艺中形成通孔，并且它制成优良的接触材料，但也可以使用其它通孔金属作为接触。互连金属化可以用于MEM开关的其他结构和互连需求，并且优选地是用于所使用的铸造和工艺的标准。可以使用各种金属和介电材料来制造开关，但是在优选实施例中，互连金属层是铝，并且介电材料是SiO 2，与标准四层CMOS制造工艺完全兼容的材料。

7. 发明授权

US06228673B1 Method of fabricating a surface coupled InGaAs photodetector 有权
标题翻译：制造表面耦合的InGaAs光电探测器的方法
公开(公告)号：US06228673B1
公开(公告)日：2001-05-08
申请号：US09311673
申请日：1999-05-13
申请人： Robert Y. Loo , Adele E. Schmitz , Julia J. Brown
发明人： Robert Y. Loo , Adele E. Schmitz , Julia J. Brown
IPC分类号： H01L21302
CPC分类号： H01L31/1035 , H01L21/28575 , H01L29/452 , H01L31/02363 , H01L31/1844 , Y02E10/544
摘要： A photodetector is fabricated in a multilayer structure having a semi-insulating InP substrate, an n+ InP contact layer overlying the InP substrate, an undoped InGaAs absorbing layer overlying the n+ InP contact layer, and a p+ doped InGaAs layer overlying the undoped InGaAs absorbing layer. A gold-beryllium p-contact dot is deposited onto the p+ doped InGaAs layer of the multilayer structure. A mesa structure is etched with a citric acid-based etchant into the multilayer structure. The mesa structure includes the metal p-contact dot, the p+ doped InGaAs layer, and the undoped InGaAs absorbing layer. The n+ InP contact layer is patterned, and a passive metallic n-contact layer is deposited onto the patterned n+ InP contact layer. A polyimide insulator layer overlying a portion of the structure is deposited and patterned, so that the polyimide insulator layer does not cover the passive metal p-contact dot and the metallic n-contact layer. The patterned organic polymer insulator layer is cured and the device is passivated by heating it in a nitrogen atmosphere. Thick metallic gold contract traces are deposited, with one trace extending to the gold-beryllium p-contact dot and the other trace extending to the metallic n-contact layer.
摘要翻译：以具有半绝缘InP衬底，覆盖InP衬底的n + InP接触层，覆盖n + InP接触层的未掺杂InGaAs吸收层和覆盖未掺杂的InGaAs吸收层的p +掺杂InGaAs层制成多层结构的光电检测器。金 - 铍p接触点沉积到多层结构的p +掺杂的InGaAs层上。用基于柠檬酸的蚀刻剂蚀刻台面结构到多层结构中。台面结构包括金属p接触点，p +掺杂的InGaAs层和未掺杂的InGaAs吸收层。图案化n + InP接触层，并且将钝性金属n接触层沉积到图案化的n + InP接触层上。沉积并图案化覆盖在结构的一部分上的聚酰亚胺绝缘体层，使得聚酰亚胺绝缘体层不覆盖被动金属p接触点和金属n-接触层。图案化的有机聚合物绝缘体层被固化，并且通过在氮气气氛中加热来钝化该装置。沉积厚金属金合金痕迹，一条迹线延伸到金 - 铍p接触点，另一条迹线延伸到金属n-接触层。

8. 发明授权

US06803559B2 Optically controlled MEM switches 失效
标题翻译：光控MEM开关
公开(公告)号：US06803559B2
公开(公告)日：2004-10-12
申请号：US10439624
申请日：2003-05-15
申请人： Tsung-Yuan Hsu , Robert Y. Loo , Greg Tangonan , Juan F. Lam
发明人： Tsung-Yuan Hsu , Robert Y. Loo , Greg Tangonan , Juan F. Lam
IPC分类号： G01J136
CPC分类号： H01H59/0009 , H01H1/0036 , H01H47/24 , H01H67/22
摘要： An optically controlled micro-electromechanical (MEM) switch is described which desirably utilizes photoconductive properties of a semiconductive substrate upon which MEM switches are fabricated. In one embodiment the bias voltage provided for actuation of the switch is altered by illuminating an optoelectric portion of the switch to deactivate the switch. In an alternative embodiment, a photovoltaic device provides voltage to actuate the switch without any bias lines at all. Due to the hysteresis of the electromechanical switching as a function of applied voltage, only modest variation of voltage applied to the switch is necessary to cause the switch to open or close sharply under optical control.
摘要翻译：描述了一种光学控制的微机电（MEM）开关，其理想地利用其上制造有MEM开关的半导体基板的光导特性。在一个实施例中，通过照亮开关的光电部分来改变为开关的启动提供的偏置电压，以使开关失效。在替代实施例中，光伏器件提供电压以完全启动开关而没有任何偏置线。由于作为施加电压的函数的机电开关的滞后，仅需要施加到开关的电压的适度变化，以使开关在光学控制下急剧地打开或闭合。

9. 发明授权

US06604425B1 Microelectromechanical correlation device and method 失效
标题翻译：微机电相关装置及方法
公开(公告)号：US06604425B1
公开(公告)日：2003-08-12
申请号：US09591113
申请日：2000-06-09
申请人： Tsung-Yuan Hsu , Robert Y. Loo , Juan F. Lam
发明人： Tsung-Yuan Hsu , Robert Y. Loo , Juan F. Lam
IPC分类号： G01L912
CPC分类号： G01L1/148 , G01L1/086
摘要： A method and apparatus for comparing a force to a signal, or comparing two signals, through mechanical movement of capacitive plates in a transducer. The transducer plates are separated by d, which in one embodiment is preferably a linear function of a pressure or force F. In that embodiment, application of a signal i(t+&tgr;) to the plates will cause a voltage representing a correlation between F and i to appear between the plates. In another embodiment, instead of an external mechanical force or pressure, an electrical signal V related to a signal S may drive the transducer plates to achieve a voltage indicating a correlation between S and the signal input i(t+&tgr;). Transducers to practice the invention may be microelectromechanical devices fabricated using integrated circuit techniques to permit small size and low cost.
摘要翻译：一种用于通过传感器中的电容板的机械移动来比较力与信号或比较两个信号的方法和装置。传感器板被d分开，在一个实施例中，传感器板优选地是压力或力F的线性函数。在该实施例中，将信号i（t +τ）施加到板将导致表示F 我出现在盘子之间。在另一个实施例中，代替外部机械力或压力，与信号S相关的电信号V可以驱动换能器板以实现指示S与信号输入i（t +τ）之间的相关性的电压。用于实践本发明的传感器可以是使用集成电路技术制造的微机电装置，以允许小尺寸和低成本。

10. 发明授权

US06310339B1 Optically controlled MEM switches 失效
标题翻译：光控MEM开关
公开(公告)号：US06310339B1
公开(公告)日：2001-10-30
申请号：US09429234
申请日：1999-10-28
申请人： Tsung-Yuan Hsu , Robert Y. Loo , Greg Tangonan , Juan F. Lam
发明人： Tsung-Yuan Hsu , Robert Y. Loo , Greg Tangonan , Juan F. Lam
IPC分类号： H01L3100
CPC分类号： H01H59/0009 , H01H1/0036 , H01H47/24 , H01H67/22
摘要： An optically controlled micro-electromechanical (MEM) switch is described which desirably utilizes photoconductive properties of a semiconductive substrate upon which MEM switches are fabricated. In one embodiment the bias voltage provided for actuation of the switch is altered by illuminating an optoelectric portion of the switch to deactivate the switch. In an alternative embodiment, a photovoltaic device provides voltage to actuate the switch without any bias lines at all. Due to the hysteresis of the electromechanical switching as a function of applied voltage, only modest variation of voltage applied to the switch is necessary to cause the switch to open or close sharply under optical control.
摘要翻译：描述了一种光学控制的微机电（MEM）开关，其理想地利用其上制造有MEM开关的半导体基板的光导特性。在一个实施例中，通过照亮开关的光电部分来改变为开关的启动提供的偏置电压，以使开关失效。在替代实施例中，光伏器件提供电压以完全启动开关而没有任何偏置线。由于作为施加电压的函数的机电开关的滞后，仅需要对开关施加的适当的电压变化使得开关在光学控制下急剧地打开或闭合。

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