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    • 2. 发明授权
    • CMOS-compatible MEM switches and method of making
    • CMOS兼容MEM开关及制作方法
    • US06396368B1
    • 2002-05-28
    • US09438085
    • 1999-11-10
    • Lap-Wai ChowTsung-Yuan HsuDaniel J. HymanRobert Y. LooPaul OuyangJames H. SchaffnerAdele SchmitzRobert N. Schwartz
    • Lap-Wai ChowTsung-Yuan HsuDaniel J. HymanRobert Y. LooPaul OuyangJames H. SchaffnerAdele SchmitzRobert N. Schwartz
    • H01P110
    • B81C1/00246B81B2201/014B81C2201/014B81C2203/0714B81C2203/0735H01H1/58H01H59/0009H01H2001/0057
    • A microelectromechanical (MEM) switch is fabricated inexpensively by using processing steps which are standard for fabricating multiple metal layer integrated circuits, such as CMOS. The exact steps may be adjusted to be compatible with the process of a particular foundry, resulting in a device which is both low cost and readily integrable with other circuits. The processing steps include making contacts for the MEM switch from metal plugs which are ordinarily used as vias to connect metal layers which are separated by a dielectric layer. Such contact vias are formed on either side of a sacrificial metallization area, and then the interconnect metallization is removed from between the contact vias, leaving them separated. Dielectric surrounding the contacts is etched back so that they protrude toward each other. Thus, when the contacts are moved toward each other by actuating the MEM switch, they connect firmly without obstruction. Tungsten is typically used to form vias in CMOS processes, and it makes an excellent contact material, but other via metals may also be employed as contacts. Interconnect metallization may be employed for other structural and interconnect needs of the MEM switch, and is preferably standard for the foundry and process used. Various metals and dielectric materials may be used to create the switches, but in a preferred embodiment the interconnect metal layers are aluminum and the dielectric material is SiO2, materials which are fully compatible with standard four-layer CMOS fabrication processes.
    • 通过使用标准制造多个金属层集成电路(如CMOS)的处理步骤,廉价地制造了微机电(MEM)开关。 可以将精确的步骤调整为与特定代工厂的过程兼容,从而导致低成本且易于与其他电路集成的装置。 处理步骤包括通过通常用作通孔的金属插头进行MEM开关的接触,以连接由电介质层分离的金属层。 这种接触通孔形成在牺牲金属化区域的任一侧,然后从接触通孔之间移除互连金属化,使它们分离。 围绕触点的介质被回蚀,使得它们彼此突出。 因此,当通过致动MEM开关使触点彼此移动时,它们牢固地连接而不阻塞。 钨通常用于在CMOS工艺中形成通孔,并且它制成优良的接触材料,但也可以使用其它通孔金属作为接触。 互连金属化可以用于MEM开关的其他结构和互连需求,并且优选地是用于所使用的铸造和工艺的标准。 可以使用各种金属和介电材料来制造开关,但是在优选实施例中,互连金属层是铝,并且介电材料是SiO 2,与标准四层CMOS制造工艺完全兼容的材料。
    • 9. 发明授权
    • Electronically controlled hybrid digital and analog phase shifter
    • 电子控制混合数字和模拟移相器
    • US07355492B2
    • 2008-04-08
    • US11094481
    • 2005-03-31
    • Daniel J. HymanRoger T. Kuroda
    • Daniel J. HymanRoger T. Kuroda
    • H01P1/18H03H7/20
    • H03H7/20H01P1/18H03H17/08
    • The inventions presented herein provide a electronically controlled phase shifters that incorporate analog and digital phase shift architectures in a novel manner that realizes the best advantages of each architecture. This combination of complementary phase shift architectures provides the high-performance and low loss characteristics of switched digital phase shift architectures with the high resolution and precision of continuous analog phase shift architectures. The circuit embodiments are electronically controlled, which simplifies implementation of what is a complex circuit. The analog phase shift elements comprise electronically-tuned varactors, which provide fine resolution and enables the incorporation of active compensation for manufacturing variation before use or for environmental conditions during use.
    • 本文提出的发明提供了一种电子控制的移相器,其以新颖的方式并入模拟和数字相移架构,实现了每个架构的最佳优点。 互补相移架构的这种组合提供了具有连续模拟相移架构的高分辨率和精度的开关数字相移架构的高性能和低损耗特性。 电路实施例是电子控制的,其简化了什么是复杂电路的实现。 模拟相移元件包括电子调谐的可变电抗器,其提供精细的分辨率,并且能够在使用之前或对于使用期间的环境条件下引入用于制造变化的主动补偿。