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    • 1. 发明授权
    • Low-loss semiconductor device and backside etching method for
manufacturing same
    • 低损耗半导体器件及其制造的背面蚀刻方法
    • US5252842A
    • 1993-10-12
    • US736670
    • 1991-07-26
    • Daniel C. BuckJames E. DegenfordSoong H. LeeScott A. ImhoffDale E. Dawson
    • Daniel C. BuckJames E. DegenfordSoong H. LeeScott A. ImhoffDale E. Dawson
    • H01L21/338H01L29/417H01L29/812H01L29/80H01L29/06H01L29/205H01L29/64
    • H01L29/66863H01L29/41733H01L29/8124H01L29/8126
    • A semiconductor device has material removed from the back of the substrate and a manufacturing process is provided for manufacturing these devices. In the exemplary embodiment, a GaAs FET chip is formed by a process including the step of etching the GaAs substrate from the back of the chip in a defined removal region to reduce the dielectric constant in the region of the source-to-drain path. A buffer layer of differing material provided between the active layers and the substrate prevents etching of the active layers during the removal process. To allow simplified etching patterns, the source-to-drain path may be laid out on the surface of the chip in a variety of patterns, including "packed" patterns concentrating a large path area in a small surface area of the chip. Optionally, this buffer layer may also be etched away in a further processing step. An insulating layer of material may be added to the back side of the chip in the etched region to increase structural strength, and a pressure relief ventilation path may be provided connecting the removal region to the outside at an edge or at the surface of the chip.
    • 半导体器件具有从衬底的背面去除的材料,并且提供制造这些器件的制造工艺。 在示例性实施例中,通过包括在限定的去除区域中从芯片背面蚀刻GaAs衬底以降低源极 - 漏极路径区域中的介电常数的步骤的方法形成GaAs FET芯片。 提供在有源层和衬底之间的不同材料的缓冲层防止在去除过程期间蚀刻活性层。 为了允许简化的蚀刻图案,源到漏极路径可以以各种图案布置在芯片的表面上,包括将芯片的小表面区域中的大路径区域集中的“封装”图案。 任选地,该缓冲层也可以在另外的处理步骤中被蚀刻掉。 可以在蚀刻区域中的芯片的背面添加绝缘层材料,以增加结构强度,并且可以提供在芯片的边缘或表面处将去除区域连接到外部的减压通气路径 。
    • 2. 发明授权
    • Fuzzy genetic learning automata classifier
    • 模糊遗传学习自动机分类器
    • US06839698B2
    • 2005-01-04
    • US09925866
    • 2001-08-09
    • Duong NguyenScott A. ImhoffSusan R. Kent
    • Duong NguyenScott A. ImhoffSusan R. Kent
    • G06K9/00G06N3/12G06N7/02G06N5/02
    • G06K9/00536G06N3/126G06N7/023
    • A method is provided for deriving a near-optimal fuzzy automaton for a given separation problem. The method includes the steps of: forming a first generation population (24) of fuzzy automata, where the first generation population of fuzzy automata includes a plurality of fuzzy automata; performing a mutation operation (28) on each fuzzy automaton in the first generation population of fuzzy automata; reproducing the first generation population of fuzzy automata using a survival of the fittest operation (30, 32, 34); and applying a cross-over operator (36) to the reproduced first generation population of fuzzy automata, thereby yielding a next-generation population of fuzzy automata. A near-optimal fuzzy automaton is identified by evaluating the performance (38) of each fuzzy automaton in the next-generation population; otherwise the methodology is repeated until a near-optimal fuzzy automaton is derived for the given separation problem.
    • 提供了一种用于为给定分离问题导出近似最优模糊自动机的方法。 该方法包括以下步骤:形成模糊自动机的第一代人群(24),其中第一代模糊自动机群包括多个模糊自动机; 对模糊自动机的第一代人群中的每个模糊自动机进行变异操作(28); 使用适者生存操作来再现模糊自动机的第一代人群(30,32,34); 并将交叉运算符(36)应用于再现的第一代模糊自动机群,从而产生下一代模糊自动机群。 通过评估下一代人群中每个模糊自动机的性能(38)来确定近似最优模糊自动机; 否则重复该方法,直到为给定的分离问题导出近似最优的模糊自动机。