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1. 发明申请

US20050130078A1 Plating using copolymer 有权
标题翻译：电镀使用共聚物
公开(公告)号：US20050130078A1
公开(公告)日：2005-06-16
申请号：US10733097
申请日：2003-12-10
申请人： Daniel Bedell , Gregory Breyta , Tom Harris , April Hixson-Goldsmith , Murali Ramasubramanian , Alfred Renaldo , Benjamin Wang
发明人： Daniel Bedell , Gregory Breyta , Tom Harris , April Hixson-Goldsmith , Murali Ramasubramanian , Alfred Renaldo , Benjamin Wang
IPC分类号： G03F7/00 , G03F7/085 , G03F7/09 , G03F7/11
CPC分类号： C09D125/18 , G03F7/085 , G03F7/094 , G03F7/11
摘要： Method of plating using a polymeric barrier layer including a polyphenolic polymer which has a repeating unit of the formula: wherein R1, R2, R3, R4, and R5 are individually hydrogen, a hydroxy group or an azo dye.
摘要翻译：使用包含具有下式重复单元的多酚聚合物的聚合物阻挡层的电镀方法：其中R 1，R 2，R 3， R 4，R 5和R 5分别是氢，羟基或偶氮染料。

2. 发明授权

US07534555B2 Plating using copolymer 有权
标题翻译：电镀使用共聚物
公开(公告)号：US07534555B2
公开(公告)日：2009-05-19
申请号：US10733097
申请日：2003-12-10
申请人： Daniel W. Bedell , Gregory Breyta , Tom K. Harris, III , April D. Hixson-Goldsmith , Murali Ramasubramanian , Alfred Renaldo , Benjamin L. Wang
发明人： Daniel W. Bedell , Gregory Breyta , Tom K. Harris, III , April D. Hixson-Goldsmith , Murali Ramasubramanian , Alfred Renaldo , Benjamin L. Wang
IPC分类号： G03F1/00
CPC分类号： C09D125/18 , G03F7/085 , G03F7/094 , G03F7/11
摘要： Method of plating using a polymeric barrier layer including a polyphenolic polymer which has a repeating unit of the formula: wherein R1, R2, R3, R4, and R5 are individually hydrogen, a hydroxy group or an azo dye.
摘要翻译：使用包含具有下式重复单元的多酚聚合物的聚合物阻挡层的电镀方法：其中R1，R2，R3，R4和R5分别为氢，羟基或偶氮染料。

3. 发明申请

US20080118866A1 METHOD FOR FORMING A TUNABLE DEEP-ULTRVIOLET DIELECTRIC ANTIREFLECTION LAYER FOR IMAGE TRANSFER PROCESSING 审中-公开
标题翻译：用于形成图像转移处理的可控深层超薄膜电介质反应层的方法
公开(公告)号：US20080118866A1
公开(公告)日：2008-05-22
申请号：US12024829
申请日：2008-02-01
申请人： Gregory Breyta , Mark Hart , William Hinsberg , Alfred Renaldo
发明人： Gregory Breyta , Mark Hart , William Hinsberg , Alfred Renaldo
IPC分类号： G11B5/33 , G03F5/00
CPC分类号： G11B5/3163 , G03F7/091 , G11B5/3116 , Y10T428/11
摘要： A tunable dielectric antireflective layer for use in photolithographic applications, and specifically, for use in an image transfer processing. The tunable dielectric antireflective layer provides a spin-on-glass (SOG) material that can act as both a hardmask and a deep UV antireflective layer (BARC). One such material is titanium oxide generated by spin-coating a titanium alkanate and curing the film by heat or electron beam. The material can be “tuned” to match index of refraction (n) with the index of refraction for the photoresist and also maintain a high absorbency value, k, at a specified wavelength. A unique character of the tunable dielectric antireflective layer is that the BARC/hardmask layer allows image transfer with deep ultraviolet photoresist.
摘要翻译：一种用于光刻应用的可调谐介电抗反射层，具体地用于图像转印处理。可调电介质抗反射层提供可用作硬掩模和深UV抗反射层（BARC）的旋涂玻璃（SOG）材料。一种这样的材料是通过旋涂钛基烷烃并通过热或电子束固化膜产生的氧化钛。可以将材料“调谐”以使折射率（n）与光致抗蚀剂的折射率匹配，并且在特定波长下还保持高的吸收值k。可调电介质抗反射层的独特特征是BARC /硬掩模层允许使用深紫外光致抗蚀剂进行图像转印。

4. 发明申请

US20140202986A1 HIGH ASPECT RATIO PATTERNING USING NEAR-FIELD OPTICAL LITHOGRAPHY WITH TOP SURFACE IMAGING 审中-公开
标题翻译：使用具有顶表面成像的近场光学平移的高均匀比例图
公开(公告)号：US20140202986A1
公开(公告)日：2014-07-24
申请号：US13749376
申请日：2013-01-24
申请人： Alfred Renaldo , Boris Kobrin
发明人： Alfred Renaldo , Boris Kobrin
IPC分类号： G03F7/00
CPC分类号： G03F7/24 , G03F7/2035
摘要： Rolling mask lithography may be performed to expose selected portions of a radiation sensitive layer to a radiation pattern that leaves selected portions of a top surface of the radiation sensitive layer resistant to development by a developer and non-selected portions susceptible to development by the developer. A structure of the selected portions is then rendered resistant to an etch process. The radiation sensitive layer is then flood exposed to a second radiation that leaves the radiation sensitive layer resistant to development by the developer. The radiation sensitive layer is then selectively etched using the etch-resistant selected portions as an etch mask.
摘要翻译：可以执行滚动掩模光刻以将辐射敏感层的选定部分暴露于辐射图案，该辐射图案使由辐射敏感层的顶表面的选定部分抵抗由显影剂显影而易受显影影响的显影剂和非选择部分。所选择的部分的结构然后变得对蚀刻工艺具有抵抗力。然后将辐射敏感层暴露于第二辐射，离开辐射敏感层对显影剂的显影有抵抗力。然后使用耐蚀刻选择部分作为蚀刻掩模来选择性地蚀刻辐射敏感层。

5. 发明授权

US07294449B1 Radiation patternable functional materials, methods of their use, and structures formed therefrom 失效
标题翻译：可辐射图案化功能材料，其使用方法和由其形成的结构
公开(公告)号：US07294449B1
公开(公告)日：2007-11-13
申请号：US10749876
申请日：2003-12-31
申请人： Christopher Gudeman , Joerg Rockenberger , Brian Hubert , Criswell Choi , Alfred Renaldo
发明人： Christopher Gudeman , Joerg Rockenberger , Brian Hubert , Criswell Choi , Alfred Renaldo
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0047 , C23C18/06 , C23C18/14 , H05K3/02 , H05K2201/0257 , H05K2203/0514 , H05K2203/121
摘要： Materials, compounds and compositions for radiation patternable functional thin films, methods of synthesizing such materials and compounds, and methods for forming an electronically functional thin film and structures including such a film. The compounds and compositions generally include (a) nanoparticles of an electronically functional material or substance and (b) ligands containing a (photo)reactive group. The method generally includes the steps of (1) irradiating the compound and/or composition, and (2) curing the irradiated compound and/or composition, generally to form an electronically functional film. The functional thin film includes a sintered mixture of nanoparticles. The thin film exhibits improved morphology and/or resolution relative to an otherwise identical structure made by an identical process, but without the (photo)functional group on the ligand, and/or relative to an otherwise identical material patterned by a conventional graphics art-based printing process. The present process also exhibits improved throughput relative to conventional photolithographic processing, by eliminating a metal deposition step. The present invention advantageously provides functional thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling elimination of a number of conventional photolithographic processing steps (e.g., functional material sputtering, PECVD, etc.).
摘要翻译：用于辐射可图形功能薄膜的材料，化合物和组合物，合成这种材料和化合物的方法，以及形成电子功能薄膜的方法和包括这种膜的结构。化合物和组合物通常包括（a）电子功能材料或物质的纳米颗粒和（b）含有（光）反应性基团的配体。该方法通常包括以下步骤：（1）照射化合物和/或组合物，和（2）固化照射的化合物和/或组合物，通常形成电子功能膜。功能性薄膜包括纳米颗粒的烧结混合物。相对于通过相同方法制备的其它相同的结构，但是没有配体上的（光）官能团，和/或相对于通过常规图形艺术图案化的其它相同材料，薄膜表现出改善的形态和/或分辨率。基于打印过程。通过消除金属沉积步骤，本方法还显示相对于常规光刻处理的改善的生产量。本发明有利地提供具有适合用于电子应用（例如显示装置或RF ID标签）的质量的功能薄膜结构，同时能够消除许多常规光刻处理步骤（例如，功能材料溅射，PECVD等）。

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