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    • 6. 发明授权
    • Probe device for a metrology instrument and method of fabricating the same
    • 用于计量仪器的探针装置及其制造方法
    • US07823216B2
    • 2010-10-26
    • US11833104
    • 2007-08-02
    • Wenjun FanSteven F. Nagle
    • Wenjun FanSteven F. Nagle
    • G01Q70/16
    • G01Q60/38
    • A method of producing a probe device for a metrology instrument such as an AFM includes providing a substrate having front and back surfaces and then forming an array of tip height structures on the first surface of the substrate, the structures having varying depths corresponding to selectable tip heights. The back surface of the substrate is etched until a thickness of the substrate substantially corresponds to a selected tip height, preferably by monitoring this etch visually and/or monitoring the etch rate. The tips are patterned from the front side of the wafer relative to fixed ends of the cantilevers, and then etched using an anisotropic etch. As a result, probe devices having sharp tips and short cantilevers exhibit fundamental resonant frequencies greater than 700 kHz or more.
    • 制造诸如AFM的计量仪器的探针装置的方法包括提供具有前表面和后表面的基底,然后在基底的第一表面上形成尖端高度结构阵列,所述结构具有对应于可选尖端的不同深度 高度。 蚀刻衬底的背面,直到衬底的厚度基本上对应于所选择的尖端高度,优选通过视觉监测该蚀刻和/或监测蚀刻速率。 从晶片的前侧相对于悬臂的固定端图案化尖端,然后使用各向异性蚀刻进行蚀刻。 结果,具有尖尖和短悬臂的探针装置表现出大于700kHz或更高的基本谐振频率。
    • 7. 发明申请
    • Probe Device for a Metrology Instrument and Method of Fabricating the Same
    • 计量仪器的探头装置及其制造方法
    • US20090031792A1
    • 2009-02-05
    • US11833104
    • 2007-08-02
    • Wenjun FanSteven F. Nagle
    • Wenjun FanSteven F. Nagle
    • G01B5/28
    • G01Q60/38
    • A method of producing a probe device for a metrology instrument such as an AFM includes providing a substrate having front and back surfaces and then forming an array of tip height structures on the first surface of the substrate, the structures having varying depths corresponding to selectable tip heights. The back surface of the substrate is etched until a thickness of the substrate substantially corresponds to a selected tip height, preferably by monitoring this etch visually and/or monitoring the etch rate. The tips are patterned from the front side of the wafer relative to fixed ends of the cantilevers, and then etched using an anisotropic etch. As a result, probe devices having sharp tips and short cantilevers exhibit fundamental resonant frequencies greater than 700 kHz or more.
    • 制造诸如AFM的计量仪器的探针装置的方法包括提供具有前表面和后表面的基底,然后在基底的第一表面上形成尖端高度结构阵列,所述结构具有对应于可选尖端的不同深度 高度。 蚀刻衬底的背面,直到衬底的厚度基本上对应于所选择的尖端高度,优选通过视觉监测该蚀刻和/或监测蚀刻速率。 从晶片的前侧相对于悬臂的固定端图案化尖端,然后使用各向异性蚀刻进行蚀刻。 结果,具有尖尖和短悬臂的探针装置表现出大于700kHz或更高的基本谐振频率。