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1. 发明授权

US07166480B2 Particle control device and particle control method for vacuum processing apparatus 失效
标题翻译：真空处理设备的粒子控制装置和粒子控制方法
公开(公告)号：US07166480B2
公开(公告)日：2007-01-23
申请号：US10376274
申请日：2003-03-03
申请人： Daisuke Shiraishi , Akira Kagoshima , Hideyuki Yamamoto , Takeshi Arai , Hiroyuki Nakano
发明人： Daisuke Shiraishi , Akira Kagoshima , Hideyuki Yamamoto , Takeshi Arai , Hiroyuki Nakano
IPC分类号： H01L21/00
CPC分类号： H01L21/67253 , H01J37/32431 , H01J2237/0225
摘要： A particle control device and a particle control method are capable of controlling the occurrences of particles in a vacuum reactor. The particle control device is used in a vacuum processing apparatus having a vacuum reactor, a gas delivery unit for supplying processing gases to the vacuum reactor, and a sample table for supporting a sample in the vacuum reactor, wherein the apparatus subjects the sample to vacuum processing. The particle control device detects particles floating inside the vacuum reactor; generates apparatus condition data indicating a condition of the vacuum processing apparatus; and determines a component which is high in a particle occurrence probability based on detected particle data and apparatus condition data, thereby enabling display of the component selected as the particle source.
摘要翻译：粒子控制装置和粒子控制方法能够控制真空反应器中颗粒的发生。粒子控制装置用于具有真空反应器，用于向真空反应器供应处理气体的气体输送单元的真空处理装置和用于在真空反应器中支撑样品的样品台，其中该装置使样品真空处理。颗粒控制装置检测浮在真空反应器内的颗粒; 生成表示真空处理装置的状态的装置条件数据; 并且基于检测到的粒子数据和装置条件数据确定粒子发生概率高的分量，从而能够显示选择为粒子源的分量。

2. 发明申请

US20050016953A1 Method of detecting particles and a processing apparatus using the same 审中-公开
标题翻译：检测粒子的方法及使用其的处理装置
公开(公告)号：US20050016953A1
公开(公告)日：2005-01-27
申请号：US10790180
申请日：2004-03-02
申请人： Takeshi Arai , Akira Kagoshima , Hideyuki Yamamoto , Daisuke Shiraishi , Hiroyuki Nakano , Toshihiko Nakata
发明人： Takeshi Arai , Akira Kagoshima , Hideyuki Yamamoto , Daisuke Shiraishi , Hiroyuki Nakano , Toshihiko Nakata
IPC分类号： G01N21/956 , G01L21/30 , G01N15/02 , H01L21/66
CPC分类号： G01N15/0205
摘要： A sample is processed while suppressing film deposition generated during plasma processing and fogging on a measurement window caused by etching to stably detect floating contaminants in a processing chamber with an improved contaminant capture rate. A particle detector is provided in the processing chamber, except for a space defined between electrodes of the plasma generator or a portion above the platform in which the plasma is generated. Laser light for scanning is emitted from the measurement window to the processing chamber, so that the particle detector detects scattered light from contaminants present in the processing chamber. The particle detector detects contaminants based on the detected scattered light during operation of the processing apparatus.
摘要翻译：处理样品，同时抑制等离子体处理期间产生的膜沉积和由蚀刻引起的测量窗上的雾化，以稳定地检测具有改进的污染物捕获率的处理室中的漂浮污染物。除了等离子体发生器的电极之间的空间或其上产生等离子体的平台之上的部分之外，在处理室中设置有粒子检测器。用于扫描的激光从测量窗口发射到处理室，使得颗粒检测器检测来自处理室中存在的污染物的散射光。颗粒检测器在处理装置的操作期间基于检测到的散射光检测污染物。

3. 发明申请

US20050054205A1 Mask trimming apparatus and mask trimming method 审中-公开
标题翻译：面罩修剪装置和面罩修剪方法
公开(公告)号：US20050054205A1
公开(公告)日：2005-03-10
申请号：US10790212
申请日：2004-03-02
申请人： Junichi Tanaka , Hideyuki Yamamoto , Akira Kagoshima , Daisuke Shiraishi
发明人： Junichi Tanaka , Hideyuki Yamamoto , Akira Kagoshima , Daisuke Shiraishi
IPC分类号： H01L21/3065 , G03F7/40 , H01L21/00 , H01L21/027 , H01L21/302 , H01L21/311 , H01L21/3213 , H01L21/461 , H01L21/66
CPC分类号： H01L21/67069 , G03F7/40 , H01L21/0273 , H01L21/31138 , H01L21/32139 , H01L21/67253 , H01L22/26
摘要： A plasma etching apparatus and method are provided to obtain an accurate dimension after trimming based on an amount of roughness of a mask edge or an amount of radicals in plasma. A wafer on the surface of which a desirably patterned mask for etching is formed is processed in a plasma etching process chamber and the mask is trim-treated by plasma etching so as to reduce the patterned mask width. The apparatus includes a plasma monitor for measuring an amount of radicals in the plasma process chamber, and a trimming condition calculator for calculating a time required for the trimming to obtain a desired mask width, based on a pre-measured width dimension of the patterned mask and a pre-measured amount of roughness of a mask edge and the radical amount measured by the plasma monitor. The trimming is performed for the time calculated by the trimming condition calculator.
摘要翻译：提供了一种等离子体蚀刻装置和方法，用于基于掩模边缘的粗糙度或等离子体中的自由基的量来修整后的精确尺寸。在其表面上形成用于蚀刻的期望图案化掩模的晶片在等离子体蚀刻处理室中进行处理，并且通过等离子体蚀刻对掩模进行修整处理，以便减小图案化掩模宽度。该装置包括用于测量等离子体处理室中的自由基量的等离子体监视器，以及修剪条件计算器，用于基于图案化掩模的预先测量的宽度尺寸来计算修剪以获得期望的掩模宽度所需的时间以及掩模边缘的预测量的粗糙度和由等离子体监视器测量的自由基量。在由修整条件计算器计算的时间进行修整。

4. 发明授权

US07343217B2 System for monitoring and controlling a semiconductor manufacturing apparatus using prediction model equation 有权
标题翻译：使用预测模型方程式监测和控制半导体制造装置的系统
公开(公告)号：US07343217B2
公开(公告)日：2008-03-11
申请号：US11439265
申请日：2006-05-24
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
IPC分类号： G06F19/00
CPC分类号： H01L22/20 , G05B13/048 , G05B19/41865 , G05B23/024 , G05B2219/31357 , G05B2219/32058 , H01L21/67276 , H01L2924/0002 , Y02P90/12 , Y02P90/14 , Y02P90/18 , Y02P90/20 , H01L2924/00
摘要： A semiconductor processing apparatus for processing a semiconductor wafer includes a plurality of sensors for monitoring a processing state, a processing result input unit, a model equation generation unit to generate a model equation for predicting a processing result, a processing result prediction unit which predicts a processing result, and a process recipe control unit. Further, a system is provided which comprises the model equation generation unit is provided at a remote location, and transmits the generated prediction model equation to the semiconductor processing apparatus through a network to control the processing condition of the semiconductor processing apparatus by the process recipe control unit.
摘要翻译：用于处理半导体晶片的半导体处理装置包括用于监视处理状态的多个传感器，处理结果输入单元，用于生成用于预测处理结果的模型方程式的模型方程生成单元，预测处理结果预测单元处理结果，以及处理配方控制单元。此外，提供了一种系统，其包括在远程位置处提供模型方程生成单元，并且通过网络将生成的预测模型方程发送到半导体处理装置，以通过处理配方控制来控制半导体处理装置的处理状态单元。

5. 发明授权

US07330346B2 Etching apparatus, method for measuring self-bias voltage, and method for monitoring etching apparatus 失效
标题翻译：蚀刻装置，自偏压测定方法以及蚀刻装置的监视方法
公开(公告)号：US07330346B2
公开(公告)日：2008-02-12
申请号：US11506791
申请日：2006-08-21
申请人： Shoji Ikuhara , Hideyuki Yamamoto , Daisuke Shiraishi , Akira Kagoshima
发明人： Shoji Ikuhara , Hideyuki Yamamoto , Daisuke Shiraishi , Akira Kagoshima
IPC分类号： H02N13/00
CPC分类号： H01L21/6833 , H02N13/00
摘要： The invention provides a means for estimating a self-bias voltage under arbitrary etching conditions via a simple procedure. The present invention provides a method for measuring self-bias voltage of an etching apparatus comprising an electrostatic chuck mechanism 1 and 10 for chucking a sample 2, a mechanism 13 and 14 for supplying cooling gas 12 to a rear surface of the sample 2 and controlling the pressure thereof, and a means for measuring the relative force of electrostatic chuck of the sample based on the rear surface pressure control status of the sample 2 being processed, wherein the relative force of electrostatic chuck of the sample and the electrostatic chuck voltage corresponding to the force of electrostatic chuck are acquired based on the rear surface pressure control of the sample 2 when high-frequency bias power is applied to the sample 2 being processed, and the relative force of electrostatic chuck of the sample and the electrostatic chuck voltage corresponding to the force of electrostatic chuck are acquired based on the rear surface pressure control status of the sample when high-frequency bias power is not applied to the sample being processed, and the self-bias voltage is estimated using the acquired forces of electrostatic chuck and the electrostatic chuck voltages corresponding to the two statuses.
摘要翻译：本发明提供了一种用于通过简单的过程在任意蚀刻条件下估计自偏压的装置。本发明提供了一种用于测量蚀刻装置的自偏压的方法，该蚀刻装置包括用于夹持样品2的静电卡盘机构1和10，用于将冷却气体12供应到样品2的后表面的机构13和14，并且控制其压力，以及用于根据正在处理的样品2的背面压力控制状态来测量样品的静电卡盘的相对力的装置，其中样品的静电卡盘的相对力和对应于当对待处理的样品2施加高频偏置功率时，基于样品2的背面压力控制获取静电卡盘的力，并且将样品的静电卡盘与静电卡盘电压的相对力对应于当高频时，基于样品的背面压力控制状态获取静电卡盘的力 cy偏压功率不会被施加到正在处理的样品，并且使用所获取的静电卡盘的力和对应于两种状态的静电卡盘电压来估计自偏压。

6. 发明申请

US20100132888A1 Plasma Processing Apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20100132888A1
公开(公告)日：2010-06-03
申请号：US12699382
申请日：2010-02-03
申请人： Shoji IKUHARA , Daisuke Shiraishi , Hideyuki Yamamoto , Akira Kagoshima , Hiromichi Enami , Yosuke Karashima , Eiji Matsumoto
发明人： Shoji IKUHARA , Daisuke Shiraishi , Hideyuki Yamamoto , Akira Kagoshima , Hiromichi Enami , Yosuke Karashima , Eiji Matsumoto
IPC分类号： H01L21/306
CPC分类号： H01L21/67069 , H01J37/32935 , H01L21/67253
摘要： A plasma processing apparatus includes a plasma processing main frame, and an apparatus controller controlling the plasma processing main frame. The plasma processing main frame has a vacuum process chamber, an exhaust device, a mass flow controller, a stage electrode receiving a workpiece, a high-frequency electrical source to, and a transfer device placing the workpiece on the stage electrode and carrying out the processed workpiece. The apparatus controller controls the plasma processing main frame in accordance with a predetermined procedure and is provided with a diagnosis device which acquires a plurality of recipes for processing workpieces carried in the chamber and apparatus parameters of the plasma processing apparatus when a specific recipe of the above recipes is executed, whereby the condition of the plasma processing main frame is diagnosed based on the acquired apparatus parameters.
摘要翻译：等离子体处理装置包括等离子体处理主框架和控制等离子体处理主框架的装置控制器。等离子体处理主框架具有真空处理室，排气装置，质量流量控制器，接收工件的阶段电极，高频电源和将工件放置在平台电极上的传送装置，加工工件。设备控制器按照预定的步骤控制等离子体处理主框架，并且设置有诊断装置，该诊断装置获取用于处理在室中携带的工件的多个配方和等离子体处理装置的装置参数，当上述特定配方执行配方，由此基于所获取的装置参数来诊断等离子体处理主框架的状态。

7. 发明申请

US20050236364A1 Etching system and etching method 审中-公开
标题翻译：蚀刻系统和蚀刻方法
公开(公告)号：US20050236364A1
公开(公告)日：2005-10-27
申请号：US11154698
申请日：2005-06-17
申请人： Akira Kagoshima , Motohiko Yoshigai , Hideyuki Yamamoto , Daisuke Shiraishi , Junichi Tanaka , Kenji Tamaki , Natsuyo Morioka
发明人： Akira Kagoshima , Motohiko Yoshigai , Hideyuki Yamamoto , Daisuke Shiraishi , Junichi Tanaka , Kenji Tamaki , Natsuyo Morioka
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/3213 , H01L21/66 , H01L21/302
CPC分类号： H01L21/67253 , G05B2219/45212 , H01J37/32935 , H01L21/32137 , H01L22/20
摘要： An etching method for subjecting a single film to be etched to etching comprised of a plurality of etching steps based on respectively different recipes, includes steps of generating and fixing a recipe which is a preset recipe to be applied to an etching step of the plurality of etching steps which affects an underlying film making contact with the single film to be etched, generating different recipes other than the preset recipe to be applied to other etching steps of the plurality of etching steps, wherein at least one of the different recipes for the other etching steps is generated on the basis of processed results, and conducting etching of the single film according to the recipes generated.
摘要翻译：一种蚀刻方法，用于对单个膜进行蚀刻以基于各自不同的配方的多个蚀刻步骤进行的蚀刻，包括以下步骤：产生和固定作为要应用于多个蚀刻步骤的蚀刻步骤的预设配方的配方蚀刻步骤，其影响与待蚀刻的单个膜接触的底层膜，产生除了应用于多个蚀刻步骤的其它蚀刻步骤的预设配方之外的不同配方，其中至少一个不同的配方用于另一个基于处理结果产生蚀刻步骤，并根据生成的配方对单个膜进行蚀刻。

8. 发明申请

US20050158886A1 Method for processing semiconductor 有权
标题翻译：半导体处理方法
公开(公告)号：US20050158886A1
公开(公告)日：2005-07-21
申请号：US11066221
申请日：2005-02-28
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Akira Kagoshima , Daisuke Shiraishi
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Akira Kagoshima , Daisuke Shiraishi
IPC分类号： H01J37/32 , H01L21/00 , G01L21/30
CPC分类号： H01L21/67276 , H01J37/32935 , H01J37/32972 , H01J37/3299 , H01L21/67253
摘要： A method of processing a semiconductor which includes providing a process gas supply unit for supplying a process gas to a sample stand to hold a sample in a process chamber and to the process chamber, successively supplying a plurality of samples of a lot to the process chamber to conduct an intra-lot successive process, predicting, before a lot process is started and according to sensor data detected by a state sensor to detect a state in the process chamber, intra-lot variation patterns of results of the intra-lot successive process, and changing, according to a result of the prediction by the intra-lot variation pattern prediction unit, a process condition applied to a sample of the lot and conducting the lot process.
摘要翻译：一种处理半导体的方法，包括提供用于向样品台供应处理气体的处理气体供应单元，以将样品保持在处理室和处理室中，将多个样品批次连续地供应到处理室进行批量间连续处理，在大量处理开始之前，根据由状态传感器检测到的传感器数据来检测处理室中的状态，批量间连续处理的结果的批内变化模式并且根据批内变化模式预测单元的预测结果，改变应用于批次的样本的处理条件并进行批次处理。

9. 发明授权

US06908529B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US06908529B2
公开(公告)日：2005-06-21
申请号：US10087771
申请日：2002-03-05
申请人： Hideyuki Yamamoto , Akira Kagoshima , Shoji Ikuhara , Daisuke Shiraishi , Junichi Tanaka
发明人： Hideyuki Yamamoto , Akira Kagoshima , Shoji Ikuhara , Daisuke Shiraishi , Junichi Tanaka
IPC分类号： B01J19/08 , H01J37/32 , H01L21/00 , H01L21/3065 , H05H1/00 , C23C16/00 , C23F1/00
CPC分类号： H01L21/67253 , H01J37/32935 , H01J37/32972 , H01L21/67069
摘要： A plasma processing system for processing a workpiece by using plasma generated in a chamber, includes a light transmissive member disposed in the chamber, the workpiece being disposed inside the light transmissive member; and a light receiving unit mounted on the chamber for receiving light inside the light transmissive member, wherein a state of processing the workpiece is detected by using data detected from light inside the light transmissive member before processing the workpiece and data detected from light inside the light transmissive member generated during processing the workpiece. A plasma processing method and system is provided which facilitates an operation of the system and executes a reliable processing.
摘要翻译：一种用于通过使用在室中产生的等离子体处理工件的等离子体处理系统，包括设置在所述室中的透光构件，所述工件设置在所述透光构件内部; 以及安装在所述室上的受光单元，用于在所述透光构件内部接收光，其中，在处理所述工件之前，通过使用从所述透光构件内的光检测到的数据来检测所述工件的处理状态和从所述光内的光检测的数据在处理工件期间产生的透射构件。提供了一种等离子体处理方法和系统，其有助于系统的操作并执行可靠的处理。

10. 发明授权

US07473332B2 Method for processing semiconductor 有权
标题翻译：半导体处理方法
公开(公告)号：US07473332B2
公开(公告)日：2009-01-06
申请号：US11066221
申请日：2005-02-28
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Akira Kagoshima , Daisuke Shiraishi
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Akira Kagoshima , Daisuke Shiraishi
IPC分类号： H01L21/00 , C23C16/00 , C22C14/00
CPC分类号： H01L21/67276 , H01J37/32935 , H01J37/32972 , H01J37/3299 , H01L21/67253
摘要： A method of processing a semiconductor which includes providing a process gas supply unit for supplying a process gas to a sample stand to hold a sample in a process chamber and to the process chamber, successively supplying a plurality of samples of a lot to the process chamber to conduct an intra-lot successive process, predicting, before a lot process is started and according to sensor data detected by a state sensor to detect a state in the process chamber, intra-lot variation patterns of results of the intra-lot successive process, and changing, according to a result of the prediction by the intra-lot variation pattern prediction unit, a process condition applied to a sample of the lot and conducting the lot process.
摘要翻译：一种处理半导体的方法，包括提供用于向样品台供应处理气体的处理气体供应单元，以将样品保持在处理室和处理室中，将多个样品批次连续地供应到处理室进行批量间连续处理，在大量处理开始之前，根据由状态传感器检测到的传感器数据来检测处理室中的状态，批量间连续处理的结果的批内变化模式并且根据批内变化模式预测单元的预测结果，改变应用于批次的样本的处理条件并进行批次处理。

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