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1. 发明申请

US20080277716A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20080277716A1
公开(公告)日：2008-11-13
申请号：US12113367
申请日：2008-05-01
申请人： Daisuke NISHIDA , Akihito YAMAMOTO , Yoshio OZAWA , Katsuaki NATORI , Katsuyuki SEKINE , Masayuki TANAKA , Ryota FUJITSUKA
发明人： Daisuke NISHIDA , Akihito YAMAMOTO , Yoshio OZAWA , Katsuaki NATORI , Katsuyuki SEKINE , Masayuki TANAKA , Ryota FUJITSUKA
IPC分类号： H01L29/788
CPC分类号： H01L29/7883 , H01L27/115 , H01L27/11521 , H01L29/40114 , H01L29/42324
摘要： A semiconductor device includes a semiconductor substrate having a device formation region, a tunnel insulating film formed on the device formation region, a floating gate electrode formed on the tunnel insulating film, isolation insulating films which cover side surfaces of the device formation region, side surfaces of the tunnel insulating film, and side surfaces of a lower portion of the floating gate electrode, an inter-electrode insulating film which covers an upper surface and side surfaces of an upper portion of the floating gate electrode, and a control gate electrode formed on the inter-electrode insulating film, wherein upper corner portions of the floating gate electrode are rounded as viewed from a direction parallel with the upper surface and the side surfaces of the upper portion of the floating gate electrode.
摘要翻译：半导体器件包括具有器件形成区域的半导体衬底，形成在器件形成区域上的隧道绝缘膜，形成在隧道绝缘膜上的浮置栅电极，覆盖器件形成区域的侧表面的隔离绝缘膜，侧表面的隧道绝缘膜的侧表面和浮栅的下部的侧表面，覆盖浮置栅电极的上部的上表面和侧表面的电极间绝缘膜和形成在栅极电极上的控制栅电极所述电极间绝缘膜，其中，从与所述浮栅电极的上部的上表面和所述侧面平行的方向观察，所述浮栅电极的上角部为圆形。

2. 发明申请

US20090256192A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20090256192A1
公开(公告)日：2009-10-15
申请号：US12407597
申请日：2009-03-19
申请人： Ryota FUJITSUKA , Katsuyuki SEKINE , Daisuke NISHIDA , Katsuaki NATORI , Yoshio OZAWA
发明人： Ryota FUJITSUKA , Katsuyuki SEKINE , Daisuke NISHIDA , Katsuaki NATORI , Yoshio OZAWA
IPC分类号： H01L29/792 , H01L21/762 , H01L21/336
CPC分类号： H01L27/11568 , H01L29/40117
摘要： In a nonvolatile semiconductor memory device where a tunnel insulating film, a charge storage layer, a blocking insulating film, and a control gate are stacked one on top of another on a semiconductor substrate, with an element isolation insulating film buried between adjacent cells, a barrier layer composed of at least one of a silicon nitride film, a silicon oxynitride film, and a silicon oxide film which has a higher density than that of the element isolation insulating film is provided at the interface between the element isolation insulating film and the blocking insulating film or between the element isolation film and the control gate.
摘要翻译：在其中隧道绝缘膜，电荷存储层，阻挡绝缘膜和控制栅极的半导体存储器件在半导体衬底上层叠在另一个的半导体衬底上，其中元件隔离绝缘膜埋在相邻电池之间，在元件隔离绝缘膜和阻挡层之间的界面处设置有由氮化硅膜，氮氧化硅膜和具有比元件隔离绝缘膜的密度高的氧化硅膜中的至少一种构成的阻挡层绝缘膜或元件隔离膜和控制栅之间。

3. 发明申请

US20130001715A1 MAGNETORESISTIVE ELEMENT AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：磁性元件及其制造方法
公开(公告)号：US20130001715A1
公开(公告)日：2013-01-03
申请号：US13425282
申请日：2012-03-20
申请人： Koji YAMAKAWA , Katsuaki NATORI , Daisuke IKENO
发明人： Koji YAMAKAWA , Katsuaki NATORI , Daisuke IKENO
IPC分类号： H01L29/82 , H01L43/12
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08 , H01L43/10
摘要： In accordance with an embodiment, a magnetoresistive element includes a lower electrode, a first magnetic layer on the lower electrode, a first interfacial magnetic layer on the first magnetic layer, a nonmagnetic layer on the first interfacial magnetic layer, a second interfacial magnetic layer on the nonmagnetic layer, a second magnetic layer on the second interfacial magnetic layer; and an upper electrode layer on the second magnetic layer. Either the first magnetic and interfacial magnetic layers or the second magnetic and interfacial magnetic layers constitute a storage layer. The other layers of the first magnetic and interfacial magnetic layers and the second magnetic and interfacial magnetic layers constitute a reference layer. The lower electrode includes an alloy layer or mixture layer of a precious metal and a transition element or a rare earth element, or comprises a conductive oxide layer.
摘要翻译：根据实施例，磁阻元件包括下电极，下电极上的第一磁性层，第一磁性层上的第一界面磁性层，第一界面磁性层上的非磁性层，第一界面磁性层上的第二界面磁性层非磁性层，第二界面磁性层上的第二磁性层; 和第二磁性层上的上电极层。第一磁性界面磁性层或第二磁性和界面磁性层构成存储层。第一磁性界面磁性层和第二磁性和界面磁性层的其它层构成参考层。下电极包括贵金属和过渡元素或稀土元素的合金层或混合层，或者包括导电氧化物层。

4. 发明申请

US20120007196A1 MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：磁性随机访问存储器及其制造方法
公开(公告)号：US20120007196A1
公开(公告)日：2012-01-12
申请号：US13051945
申请日：2011-03-18
申请人： Katsuaki NATORI , Koji YAMAKAWA , Daisuke IKENO
发明人： Katsuaki NATORI , Koji YAMAKAWA , Daisuke IKENO
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L27/228 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetoresistive random access memory includes a magnetoresistive element in a memory cell, the magnetoresistive element including a first metal magnetic layer, a second metal magnetic layer, and an insulation layer interposed between the first and second metal magnetic layers. An area of each of the first and second metal magnetic layers is smaller than an area of the insulation layer.
摘要翻译：根据一个实施例，磁阻随机存取存储器包括存储单元中的磁阻元件，所述磁阻元件包括第一金属磁性层，第二金属磁性层和介于第一和第二金属磁性层之间的绝缘层。第一和第二金属磁性层中的每一个的面积小于绝缘层的面积。

5. 发明申请

US20130249025A1 MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH THE SAME 审中-公开
标题翻译：磁性元件和磁阻随机存取存储器
公开(公告)号：US20130249025A1
公开(公告)日：2013-09-26
申请号：US13607700
申请日：2012-09-08
申请人： Katsuaki NATORI , Toshihiko Nagase , Eiji Kitagawa , Tadashi Kai
发明人： Katsuaki NATORI , Toshihiko Nagase , Eiji Kitagawa , Tadashi Kai
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/02 , H01L27/228 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element includes a bottom electrode, a first magnetic layer with an magnetic axis substantially perpendicular to a film plane thereof, a first interface layer, an MgO insulating layer, a second interface layer, a second magnetic layer with an magnetic axis nearly perpendicular to a film plane thereof, and a top electrode. The magnetoresistive element has a diffusion barrier layer between the first magnetic layer and the first interface layer when the first magnetic layer contains Pt or Pd, and a diffusion barrier layer between the second magnetic layer and the second interface layer when the second magnetic layer contains Pt or Pd. The diffusion barrier layer is an Hf film of thickness 0.6 nm to 0.8 nm.
摘要翻译：根据一个实施例，磁阻元件包括底电极，具有基本上垂直于其膜平面的磁轴的第一磁性层，第一界面层，MgO绝缘层，第二界面层，具有几乎垂直于其膜平面的磁轴和顶部电极。当第一磁性层包含Pt或Pd时，磁阻元件在第一磁性层和第一界面层之间具有扩散阻挡层，当第二磁性层含有Pt时，第二磁性层和第二界面层之间具有扩散阻挡层或Pd。扩散阻挡层是厚度为0.6nm〜0.8nm的Hf膜。

6. 发明申请

US20120112297A1 MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US20120112297A1
公开(公告)日：2012-05-10
申请号：US13049806
申请日：2011-03-16
申请人： Koji YAMAKAWA , Katsuaki NATORI , Daisuke IKENO , Yasuyuki SONODA
发明人： Koji YAMAKAWA , Katsuaki NATORI , Daisuke IKENO , Yasuyuki SONODA
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetic random access memory including a magneto resistive element, including a free layer including first metal atoms, a first metal layer on the free layer and including a first metal, a first interfacial magnetic layer on the first metal layer, a nonmagnetic layer provided on the first interfacial magnetic layer, a second interfacial magnetic layer on the nonmagnetic layer, a second metal layer on the second interfacial magnetic layer and including a second metal, and a pinned layer provided on the second metal layer and including the second metal atoms.
摘要翻译：根据一个实施例，包括磁阻元件的磁性随机存取存储器包括包含第一金属原子的自由层，在自由层上的第一金属层，并且包括第一金属，第一金属层上的第一界面磁性层，设置在第一界面磁性层上的非磁性层，非磁性层上的第二界面磁性层，第二界面磁性层上的第二金属层，并包括第二金属，以及设置在第二金属层上的被钉扎层，第二金属原子。

7. 发明申请

US20110140238A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110140238A1
公开(公告)日：2011-06-16
申请号：US12887111
申请日：2010-09-21
申请人： Katsuaki NATORI , Koji YAMAKAWA , Takayuki OKADA , Iwao KUNISHIMA , Hiroshi NAKAKI
发明人： Katsuaki NATORI , Koji YAMAKAWA , Takayuki OKADA , Iwao KUNISHIMA , Hiroshi NAKAKI
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L27/11507 , H01L28/56
摘要： According to an embodiment, there is provided a method for manufacturing a semiconductor device having a ferroelectric capacitor including a lower electrode, an upper electrode, and a dielectric film provided between the lower electrode and the upper electrode. The method includes firstly forming a conductive film on the lower electrode. Next, it includes forming an SRO film on the conductive film. Then, it includes performing a first thermal treatment crystallizing the SRO film. Then, it includes forming a first PZT film on the SRO film by the sputtering method and performing a second thermal treatment crystallizing the first PZT film. Then, it includes forming the second PZT film on the first PZT film by the CVD method.
摘要翻译：根据一个实施例，提供一种制造具有铁电电容器的半导体器件的方法，所述铁电电容器包括设置在下电极和上电极之间的下电极，上电极和电介质膜。该方法包括首先在下电极上形成导电膜。接下来，其包括在导电膜上形成SRO膜。然后，它包括进行结晶SRO膜的第一热处理。然后，包括通过溅射法在SRO膜上形成第一PZT膜，并进行结晶第一PZT膜的第二热处理。然后，其包括通过CVD法在第一PZT膜上形成第二PZT膜。

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