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1. 发明授权

US08658341B2 Pattern reversal film forming composition and method of forming reversed pattern 有权
标题翻译：图案反转成膜组合物和形成反转图案的方法
公开(公告)号：US08658341B2
公开(公告)日：2014-02-25
申请号：US13266034
申请日：2010-04-21
申请人： Daisuke Maruyama , Hiroaki Yaguchi , Yasushi Sakaida
发明人： Daisuke Maruyama , Hiroaki Yaguchi , Yasushi Sakaida
IPC分类号： G03F7/00 , G03F7/004 , G03F7/028 , G03F7/075 , G03F7/11
CPC分类号： G03F7/40
摘要： There is provided to a pattern reversal film forming composition that is capable of forming a pattern reversal film which is not mixed with a resist pattern formed on a substrate, and that is only capable of forming a pattern reversal film advantageously covering the pattern, but also irrespective of whether the resist pattern is coarse or fine, capable of forming a planar film excellent in temporal stability on the pattern. A pattern reversal film forming composition including a polysiloxane, an additive and an organic solvent, characterized in that the polysiloxane is a product of a hydrolysis and/or condensation reaction of a silane compound containing a tetraalkoxysilane of Si(OR1)4 and an alkoxysilane of XnSi(OR2)4-n, and the tetraalkoxysilane is used in a ratio of 1 to 50% by mole based on the number of moles of the whole silane compound; and a pattern reversal film and a method of forming a reversed pattern in which the composition is used.
摘要翻译：提供了能够形成图案反转膜的图案反转膜形成组合物，其不与形成在基底上的抗蚀剂图案混合，并且仅能够形成有利地覆盖图案的图案反转膜，而且无论抗蚀剂图案是粗糙还是微细，都能够形成在图案上的时间稳定性优异的平面膜。一种包含聚硅氧烷，添加剂和有机溶剂的图案反转膜形成组合物，其特征在于所述聚硅氧烷是含有Si（OR 1）4的四烷氧基硅烷和含有Si（OR 1）4）的烷氧基硅烷的硅烷化合物的水解和/或缩合反应的产物， XnSi（OR2）4-n，四烷氧基硅烷的用量相对于全部硅烷化合物的摩尔数为1〜50摩尔％和图案反转膜以及形成其中使用组合物的反转图案的方法。

2. 发明申请

US20120045899A1 PATTERN REVERSAL FILM FORMING COMPOSITION AND METHOD OF FORMING REVERSED PATTERN 有权
标题翻译：形成反转膜的图案反转膜和形成反转图案的方法
公开(公告)号：US20120045899A1
公开(公告)日：2012-02-23
申请号：US13266034
申请日：2010-04-21
申请人： Daisuke Maruyama , Hiroaki Yaguchi , Yasushi Sakaida
发明人： Daisuke Maruyama , Hiroaki Yaguchi , Yasushi Sakaida
IPC分类号： H01L21/311 , B05D5/00 , B05D3/02 , C09D183/04
CPC分类号： G03F7/40
摘要： There is provided to a pattern reversal film forming composition that is capable of forming a pattern reversal film which is not mixed with a resist pattern formed on a substrate, and that is only capable of forming a pattern reversal film advantageously covering the pattern, but also irrespective of whether the resist pattern is coarse or fine, capable of forming a planar film excellent in temporal stability on the pattern. A pattern reversal film forming composition including a polysiloxane, an additive and an organic solvent, characterized in that the polysiloxane is a product of a hydrolysis and/or condensation reaction of a silane compound containing a tetraalkoxysilane of Si(OR1)4 and an alkoxysilane of XnSi(OR2)4-n, and the tetraalkoxysilane is used in a ratio of 1 to 50% by mole based on the number of moles of the whole silane compound; and a pattern reversal film and a method of forming a reversed pattern in which the composition is used.
摘要翻译：提供了能够形成图案反转膜的图案反转膜形成组合物，其不与形成在基底上的抗蚀剂图案混合，并且仅能够形成有利地覆盖图案的图案反转膜，而且无论抗蚀剂图案是粗糙还是微细，都能够形成在图案上的时间稳定性优异的平面膜。一种包含聚硅氧烷，添加剂和有机溶剂的图案反转膜形成组合物，其特征在于所述聚硅氧烷是含有Si（OR 1）4的四烷氧基硅烷和含有Si（OR 1）4）的烷氧基硅烷的硅烷化合物的水解和/或缩合反应的产物， XnSi（OR2）4-n，四烷氧基硅烷的用量相对于全部硅烷化合物的摩尔数为1〜50摩尔％和图案反转膜以及形成其中使用组合物的反转图案的方法。

3. 发明授权

US09165781B2 Composition for forming pattern reversal film and method for forming reversal pattern 有权
标题翻译：用于形成图案反转膜的组合物和形成反转图案的方法
公开(公告)号：US09165781B2
公开(公告)日：2015-10-20
申请号：US14008820
申请日：2012-02-24
申请人： Yasushi Sakaida , Hiroaki Yaguchi
发明人： Yasushi Sakaida , Hiroaki Yaguchi
IPC分类号： H01L21/311 , H01L21/308 , C08G77/20 , C09D183/06 , H01L21/033 , G03F7/075 , G03F7/40 , C08K5/09
CPC分类号： H01L21/3081 , C08G77/20 , C08K5/09 , C09D183/06 , G03F7/0752 , G03F7/405 , H01L21/0337 , Y02P20/582
摘要： There is provided a silicon-containing composition for forming a pattern reversal film that can be reworked by an organic solvent that is normally used for the removal of resist patterns. A composition for forming a pattern reversal film, characterized by comprising: polysiloxane; an additive; and an organic solvent, wherein the polysiloxane has a structural unit of Formula (1) and a structural unit of Formula (2): (where R1 is a C1-8 alkyl group), and (where R2 is an acryloyloxy group or a methacryloyloxy group; and n is an integer of 2 to 4), and the additive is an organic acid having at least two of a carboxy group and/or a hydroxy group; and a pattern reversal film and a method for forming a reversal pattern by use of the composition.
摘要翻译：提供一种用于形成图案反转膜的含硅组合物，其可以通过通常用于除去抗蚀剂图案的有机溶剂进行再加工。一种用于形成图案反转膜的组合物，其特征在于包括：聚硅氧烷; 添加剂和有机溶剂，其中所述聚硅氧烷具有式（1）的结构单元和式（2）的结构单元：（其中R 1是C 1-8烷基）和（其中R 2是丙烯酰氧基或甲基丙烯酰氧基基团; n为2〜4的整数），添加剂为具有羧基和/或羟基中的至少2个的有机酸; 和图案反转膜以及通过使用该组合物形成反转图案的方法。

4. 发明申请

US20140017896A1 COMPOSITION FOR FORMING PATTERN REVERSAL FILM AND METHOD FOR FORMING REVERSAL PATTERN 有权
标题翻译：用于形成图案反转膜的组合物和形成反向图案的方法
公开(公告)号：US20140017896A1
公开(公告)日：2014-01-16
申请号：US14008820
申请日：2012-02-24
申请人： Yasushi Sakaida , Hiroaki Yaguchi
发明人： Yasushi Sakaida , Hiroaki Yaguchi
IPC分类号： H01L21/308
CPC分类号： H01L21/3081 , C08G77/20 , C08K5/09 , C09D183/06 , G03F7/0752 , G03F7/405 , H01L21/0337 , Y02P20/582
摘要： There is provided a silicon-containing composition for forming a pattern reversal film that can be reworked by an organic solvent that is normally used for the removal of resist patterns. A composition for forming a pattern reversal film, characterized by comprising: polysiloxane; an additive; and an organic solvent, wherein the polysiloxane has a structural unit of Formula (1) and a structural unit of Formula (2): (where R1 is a C1-8 alkyl group), and (where R2 is an acryloyloxy group or a methacryloyloxy group; and n is an integer of 2 to 4), and the additive is an organic acid having at least two of a carboxy group and/or a hydroxy group; and a pattern reversal film and a method for forming a reversal pattern by use of the composition.
摘要翻译：提供一种用于形成图案反转膜的含硅组合物，其可以通过通常用于除去抗蚀剂图案的有机溶剂进行再加工。一种用于形成图案反转膜的组合物，其特征在于包括：聚硅氧烷; 添加剂和有机溶剂，其中所述聚硅氧烷具有式（1）的结构单元和式（2）的结构单元：（其中R 1是C 1-8烷基）和（其中R 2是丙烯酰氧基或甲基丙烯酰氧基基团; n为2〜4的整数），添加剂为具有羧基和/或羟基中的至少2个的有机酸; 和图案反转膜以及通过使用该组合物形成反转图案的方法。

5. 发明申请

US20110117746A1 COATING COMPOSITION AND PATTERN FORMING METHOD 审中-公开
标题翻译：涂料组合物和图案形成方法
公开(公告)号：US20110117746A1
公开(公告)日：2011-05-19
申请号：US13054665
申请日：2009-07-23
申请人： Daisuke Maruyama , Yasushi Sakaida , BangChing Ho , Keisuke Hashimoto , Noriaki Fujitani
发明人： Daisuke Maruyama , Yasushi Sakaida , BangChing Ho , Keisuke Hashimoto , Noriaki Fujitani
IPC分类号： H01L21/31 , C09D183/04
CPC分类号： H01L21/02282 , C08G77/04 , C08G77/60 , C08L83/04 , G03F7/405 , H01L21/02211 , H01L21/02216 , H01L21/0337 , H01L21/3121 , H01L21/3122
摘要： It is an object to provide a coating composition applicable to “reversal patterning” and suitable for forming a film covering a resist pattern. The object is accomplished by a coating composition for lithography comprising an organopolysiloxane, a solvent containing the prescribed organic solvent as a main component, and a quaternary ammonium salt or a quaternary phosphonium salt; or a coating composition for lithography comprising a polysilane, a solvent containing the prescribed organic solvent as a main component, and at least one additive selected from a group consisting of a crosslinking agent, a quaternary ammonium salt, a quaternary phosphonium salt, and a sulfonic acid compound, wherein the polysilane has, at a terminal thereof, a silanol group or a silanol group together with a hydrogen atom.
摘要翻译：本发明的目的是提供适用于“反转图案化”并适用于形成覆盖抗蚀剂图案的膜的涂料组合物。该目的通过一种用于光刻的涂料组合物来实现，该涂料组合物包含有机聚硅氧烷，含有规定的有机溶剂作为主要成分的溶剂，以及季铵盐或季鏻盐; 或用于光刻的涂料组合物，其包含聚硅烷，含有规定的有机溶剂作为主要成分的溶剂和至少一种选自交联剂，季铵盐，季鏻盐和磺酸盐的添加剂酸化合物，其中聚硅烷在其末端具有硅烷醇基或硅烷醇基以及氢原子。

6. 发明申请

US20140120730A1 THIN FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING TITANIUM AND SILICON 有权
标题翻译：含有钛和硅的薄膜的薄膜成膜组合物
公开(公告)号：US20140120730A1
公开(公告)日：2014-05-01
申请号：US14131945
申请日：2012-07-20
申请人： Makoto Nakajima , Yuta Kanno , Satoshi Takeda , Yasushi Sakaida , Shuhei Shigaki
发明人： Makoto Nakajima , Yuta Kanno , Satoshi Takeda , Yasushi Sakaida , Shuhei Shigaki
IPC分类号： H01L21/033 , H01L21/311
CPC分类号： H01L21/0332 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/40 , H01L21/31111 , H01L21/31138
摘要： A thin film forming composition for forming resist underlayer film useable in the production of a semiconductor device, and a resist upper layer film absorbs undesirable UV light with a thin film as an upper layer of the EUV resist before undesirable UV light reaches the EUV resist layer in EUV lithography, an underlayer film (hardmask) for an EUV resist, a reverse material, and an underlayer film for a resist for solvent development. The thin film forming composition useable together with a resist in a lithography process, comprising a mixture of titanium compound (A) selected from: R0aTi(R1)(4−a) Formula (1) a titanium chelate compound, and a hydrolyzable titanium dimer, and a silicon compound (B): R2a′R3bSi(R4)4−(a′+b) Formula (2) a hydrolysis product, or a hydrolysis-condensation product of the mixture, wherein the number of moles of Ti atom is 50% to 90% relative to the total moles in terms of Ti atom and Si atoms in the composition.
摘要翻译：用于形成用于制造半导体器件的抗蚀剂下层膜的薄膜形成组合物，并且抗蚀剂上层膜在不期望的UV光到达EUV抗蚀剂层之前吸收作为EUV抗蚀剂的上层的薄膜的不期望的UV光在EUV光刻中，用于EUV抗蚀剂的底层膜（硬掩模），反向材料以及用于溶剂显影用抗蚀剂的下层膜。该薄膜形成组合物与平版印刷工艺中的抗蚀剂一起使用，包括钛化合物（A）的混合物，其选自：R a Ti（R 1）（4-a）式（1）钛螯合化合物和可水解的钛二聚体，和硅化合物（B）：R2a'R3bSi（R4）4-（a'+ b）式（2）水解产物或混合物的水解缩合产物，其中Ti原子的摩尔数为相对于组合物中Ti原子和Si原子的总摩尔数为50〜90％。

7. 发明申请

US20140038415A1 POLYMER-CONTAINING DEVELOPER 有权
标题翻译：含聚合物的开发商
公开(公告)号：US20140038415A1
公开(公告)日：2014-02-06
申请号：US14007096
申请日：2012-03-19
申请人： Rikimaru Sakamoto , Yasushi Sakaida , Bangching Ho
发明人： Rikimaru Sakamoto , Yasushi Sakaida , Bangching Ho
IPC分类号： G03F7/32 , H01L21/306
CPC分类号： G03F7/325 , G03F7/094 , G03F7/11 , G03F7/26 , H01L21/027 , H01L21/0275 , H01L21/0337 , H01L21/306
摘要： Disclosed is a developer, one that does not cause pattern collapse during the formation process, for the formation of a fine pattern and a method for pattern formation using the developer. A developer used in a lithography process includes a polymer for forming a dry-etching mask and an organic solvent. The polymer is preferably a curable resin different from a curable resin forming a resist film. The developer is preferably used after exposure of the resist film. The organic solvent in the developer is preferably butyl acetate or a mixed solvent of butyl acetate and an alcohol, or 2-pentanone or a mixed solvent of 2-pentanone and an alcohol. Also disclosed is a method for producing a semiconductor device.
摘要翻译：公开了一种显影剂，其不会在形成过程中引起图案塌陷，从而形成精细图案以及使用显影剂形成图案的方法。在光刻工艺中使用的显影剂包括用于形成干蚀刻掩模和有机溶剂的聚合物。聚合物优选为与形成抗蚀剂膜的可固化树脂不同的可固化树脂。显影剂优选在抗蚀剂膜曝光之后使用。显影剂中的有机溶剂优选为乙酸丁酯或乙酸丁酯与醇或2-戊酮或2-戊酮与醇的混合溶剂的混合溶剂。还公开了一种半导体器件的制造方法。

8. 发明申请

US20070148557A1 Composition for forming nitride coating film for hard mask 有权
标题翻译：用于形成硬掩模用氮化物涂膜的组合物
公开(公告)号：US20070148557A1
公开(公告)日：2007-06-28
申请号：US10584133
申请日：2004-12-22
申请人： Satoshi Takei , Yasushi Sakaida
发明人： Satoshi Takei , Yasushi Sakaida
IPC分类号： G03F1/00 , G03C1/00
CPC分类号： G03F7/11 , C23C18/02 , C23C18/06 , C23C18/1204 , C23C18/1295 , C23C26/00 , H01L21/0276 , H01L21/318
摘要： There is provided an underlayer coating that causes no intermixing with photoresist layer, can be formed by a spin-coating method, and can be used as a hard mask in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition used in manufacture of semiconductor device comprising metal nitride particles having an average particle diameter of 1 to 1000 nm, and an organic solvent. The metal nitride particles contain at least one element selected from the group consisting of titanium, silicon, tantalum, tungsten, cerium, germanium, hafnium, and gallium.
摘要翻译：提供了不与光致抗蚀剂层混合的底层涂层，可以通过旋涂法形成，并且可以用作半导体器件制造的光刻工艺中的硬掩模。具体地说，它是用于制造包含平均粒径为1-1000nm的金属氮化物颗粒和有机溶剂的半导体器件的下层涂层形成组合物。金属氮化物颗粒含有选自钛，硅，钽，钨，铈，锗，铪和镓中的至少一种元素。

9. 发明授权

US07226721B2 Underlayer coating forming composition for lithography containing compound having protected carboxyl group 有权
标题翻译：含有保护羧基的化合物的光刻用底层涂料组合物
公开(公告)号：US07226721B2
公开(公告)日：2007-06-05
申请号：US10565968
申请日：2004-07-30
申请人： Satoshi Takei , Takahiro Kishioka , Yasushi Sakaida , Tetsuya Shinjo
发明人： Satoshi Takei , Takahiro Kishioka , Yasushi Sakaida , Tetsuya Shinjo
IPC分类号： G03F7/11 , G03C5/00
CPC分类号： G03F7/091 , Y10S430/106
摘要： There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition comprising a compound having a protected carboxyl group, a compound having a group capable of reacting with a carboxyl group and a solvent, and an underlayer coating forming composition comprising a compound having a group capable of reacting with a carboxyl group and a protected carboxyl group and a solvent.
摘要翻译：提供了一种用于光刻的底层涂层形成组合物和与光致抗蚀剂相比具有高干蚀刻速率的下层涂层，并且不与用于制造半导体器件的光刻工艺中的光致抗蚀剂混合。具体地说，它是一种下层涂层形成组合物，它包括具有被保护的羧基的化合物，具有与羧基反应的基团的化合物和一种溶剂，以及一种下层涂层形成组合物，该组合物包含具有能够与羧基和保护的羧基和溶剂。

10. 发明授权

US08283103B2 Composition for forming resist underlayer film for lithography and production method of semiconductor device 失效
标题翻译：用于形成用于光刻的抗蚀剂下层膜的组合物和半导体器件的制造方法
公开(公告)号：US08283103B2
公开(公告)日：2012-10-09
申请号：US12673926
申请日：2008-08-26
申请人： Hikaru Imamura , Yasushi Sakaida , Makoto Nakajima , Satoshi Takei
发明人： Hikaru Imamura , Yasushi Sakaida , Makoto Nakajima , Satoshi Takei
IPC分类号： G03F7/00 , G03F7/004 , G03F7/11 , G03F7/40
CPC分类号： G03F7/11 , C08G77/60 , C09D183/16 , G03F7/0752
摘要： There is provided a composition for forming a resist underlayer film that can be homogeneously applied and a sublimate is suppressed during the thermal curing. There is also provided a composition for forming a resist underlayer film having a high selection ratio of dry etching relative to a resist applied thereon. A composition for forming a resist underlayer film for lithography comprising: a polysilane compound having a unit structure of Formula (1): (where R1 and R2 are independently a group of —X—Y (where X is an oxygen atom, a C1-18 alkylene group or a group of —OCnH2n— (where n is an integer of 1 to 18) and Y is a lactone ring or an adamantane ring), or one of R1 and R2 is the group of —X—Y and another thereof is an aryl group, a methyl group, an ethyl group or a C3-6 cycloalkyl group); and an organic solvent.
摘要翻译：提供一种用于形成可均匀涂布的抗蚀剂下层膜的组合物，并且在热固化期间抑制升华。还提供了一种用于形成抗蚀剂下层膜的组合物，其具有相对于其上施加的抗蚀剂的干蚀刻的高选择比。一种用于形成光刻用抗蚀剂下层膜的组合物，包括：具有式（1）的单元结构的聚硅烷化合物：（其中R 1和R 2独立地为-X-Y（其中X为氧原子，C1- 18亚烷基或-OC n H 2n - （其中n为1至18的整数）和Y为内酯环或金刚烷环），或者R 1和R 2中的一个为-X-Y基团，另一个为是芳基，甲基，乙基或C 3-6环烷基）; 和有机溶剂。

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