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1. 发明申请

US20110149640A1 MAGNETIC STORAGE DEVICE 失效
标题翻译：磁性存储器件
公开(公告)号：US20110149640A1
公开(公告)日：2011-06-23
申请号：US13039633
申请日：2011-03-03
申请人： Masanori Furuta , Daisuke Kurose , Tsutomu Sugawara
发明人： Masanori Furuta , Daisuke Kurose , Tsutomu Sugawara
IPC分类号： G11C11/00
CPC分类号： G11C7/14 , G11C7/02 , G11C7/067 , G11C11/1659 , G11C11/1673
摘要： A magnetic storage device includes a plurality of MRAM memory cells connected to a data transfer line, a clamp transistor connected between the data transfer line and a reading signal line and configured to fixedly hold the potential of the data transfer line, and a reading circuit which is connected to the reading signal line and which reads the storage information of the memory cell. The reading circuit includes a hold switch connected between the reading signal line and a reading node N and configured to hold the potential of the node N, a capacitor connected between the node N and a ground end, a precharging switch connected between the node N and a power source and configured to charge the capacitor, and an inverter to which the potential of the node N is input to generate a digital signal.
摘要翻译：磁存储装置包括连接到数据传输线的多个MRAM存储单元，连接在数据传送线和读取信号线之间并被配置为固定地保持数据传输线的电位的钳位晶体管，以及读取电路，连接到读取信号线并读出存储单元的存储信息。读取电路包括连接在读取信号线和读取节点N之间并被配置为保持节点N的电位的保持开关，连接在节点N和接地端之间的电容器，连接在节点N和节点N之间的预充电开关电源，并且被配置为对电容器充电;以及逆变器，输入节点N的电位以产生数字信号。

2. 发明授权

US08154917B2 Magnetic storage device 失效
标题翻译：磁存储装置
公开(公告)号：US08154917B2
公开(公告)日：2012-04-10
申请号：US13039633
申请日：2011-03-03
申请人： Masanori Furuta , Daisuke Kurose , Tsutomu Sugawara
发明人： Masanori Furuta , Daisuke Kurose , Tsutomu Sugawara
IPC分类号： G11C11/14
CPC分类号： G11C7/14 , G11C7/02 , G11C7/067 , G11C11/1659 , G11C11/1673
摘要： A magnetic storage device includes a plurality of MRAM memory cells connected to a data transfer line, a clamp transistor connected between the data transfer line and a reading signal line and configured to fixedly hold the potential of the data transfer line, and a reading circuit which is connected to the reading signal line and which reads the storage information of the memory cell. The reading circuit includes a hold switch connected between the reading signal line and a reading node N and configured to hold the potential of the node N, a capacitor connected between the node N and a ground end, a precharging switch connected between the node N and a power source and configured to charge the capacitor, and an inverter to which the potential of the node N is input to generate a digital signal.
摘要翻译：磁存储装置包括连接到数据传输线的多个MRAM存储单元，连接在数据传送线和读取信号线之间并被配置为固定地保持数据传输线的电位的钳位晶体管，以及读取电路，连接到读取信号线并读出存储单元的存储信息。读取电路包括连接在读取信号线和读取节点N之间并被配置为保持节点N的电位的保持开关，连接在节点N和接地端之间的电容器，连接在节点N和节点N之间的预充电开关电源，并且被配置为对电容器充电;以及逆变器，输入节点N的电位以产生数字信号。

3. 发明授权

US08009484B2 Read circuit and read method 有权
标题翻译：读电路和读方法
公开(公告)号：US08009484B2
公开(公告)日：2011-08-30
申请号：US12547945
申请日：2009-08-26
申请人： Masanori Furuta , Daisuke Kurose , Tsutomu Sugawara
发明人： Masanori Furuta , Daisuke Kurose , Tsutomu Sugawara
IPC分类号： G11C7/10 , G11C11/00
CPC分类号： G11C29/12 , G11C11/1673 , G11C13/004 , G11C27/024 , G11C29/1201 , G11C29/50 , G11C2013/0057
摘要： In a read circuit, a write circuit writes a data to be stored and/or a test data to the memory cell. A control circuit controls the write circuit to write the test data to the memory cell in a first phase, and to write the test data which is same as the first phase to the memory cell in a second phase. An integrator integrates voltages at one terminal of the memory cell during the first phase to obtain a first integrated voltage, and integrates voltages at one terminal of the memory cell during the second phase to obtain a second integrated voltage. A buffer stores the first integrated voltage. A comparator compares the first integrated voltage from the buffer with the second integrated voltage from the integrator to obtain the data.
摘要翻译：在读取电路中，写入电路将要存储的数据和/或测试数据写入存储单元。控制电路控制写入电路，以第一阶段将测试数据写入存储单元，并将与第一阶段相同的测试数据写入第二阶段的存储单元。积分器在第一阶段中将存储单元的一个端子处的电压进行积分，以获得第一积分电压，并且在第二阶段期间对存储单元的一个端子处的电压进行积分，以获得第二积分电压。缓冲器存储第一集成电压。比较器比较来自缓冲器的第一集成电压和来自积分器的第二集成电压以获得数据。

4. 发明授权

US07903455B2 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US07903455B2
公开(公告)日：2011-03-08
申请号：US12328546
申请日：2008-12-04
申请人： Mai Nozawa , Masanori Furuta , Daisuke Kurose , Tsutomu Sugawara
发明人： Mai Nozawa , Masanori Furuta , Daisuke Kurose , Tsutomu Sugawara
IPC分类号： G11C11/00
CPC分类号： G11C8/06 , G11C11/1673
摘要： A magnetic memory device including a plurality of word lines, a plurality of bit lines which intersect the word lines and are put into groups, a plurality of memory cells which are arranged at intersections between the bit lines and the word lines, each memory cell including a magnetic element and a transistor which are connected in series, a first decoder which sequentially selects the word lines, a second decoder which sequentially drives the bit lines of each group, a weighting adder which performs weighting addition of currents flowing on bit lines in a selected group to generate an added current signal, a current/voltage converter which converts the added current signal into a voltage signal, and an analog-to-digital converter which digitizes the voltage signal.
摘要翻译：一种磁存储装置，包括多个字线，与字线相交并分组的多个位线，布置在位线和字线之间的交叉处的多个存储单元，每个存储单元包括串联连接的磁性元件和晶体管，顺序地选择字线的第一解码器，顺序地驱动每组的位线的第二解码器，对流过位线的电流进行加权相加的加权加法器选择组以产生相加的电流信号，将所加电流信号转换为电压信号的电流/电压转换器以及对电压信号进行数字化的模数转换器。

5. 发明申请

US20090219757A1 MAGNETIC STORAGE DEVICE 审中-公开
标题翻译：磁性存储器件
公开(公告)号：US20090219757A1
公开(公告)日：2009-09-03
申请号：US12343353
申请日：2008-12-23
申请人： Masanori Furuta , Daisuke Kurose , Tsutomu Sugawara
发明人： Masanori Furuta , Daisuke Kurose , Tsutomu Sugawara
IPC分类号： G11C11/02 , G11C7/00
CPC分类号： G11C7/14 , G11C7/02 , G11C7/067 , G11C11/1659 , G11C11/1673
摘要： A magnetic storage device includes a plurality of MRAM memory cells connected to a data transfer line, a clamp transistor connected between the data transfer line and a reading signal line and configured to fixedly hold the potential of the data transfer line, and a reading circuit which is connected to the reading signal line and which reads the storage information of the memory cell. The reading circuit includes a hold switch connected between the reading signal line and a reading node N and configured to hold the potential of the node N, a capacitor connected between the node N and a ground end, a precharging switch connected between the node N and a power source and configured to charge the capacitor, and an inverter to which the potential of the node N is input to generate a digital signal.
摘要翻译：磁存储装置包括连接到数据传输线的多个MRAM存储单元，连接在数据传送线和读取信号线之间并被配置为固定地保持数据传输线的电位的钳位晶体管，以及读取电路，连接到读取信号线并读出存储单元的存储信息。读取电路包括连接在读取信号线和读取节点N之间并被配置为保持节点N的电位的保持开关，连接在节点N和接地端之间的电容器，连接在节点N和节点N之间的预充电开关电源，并且被配置为对电容器充电;以及逆变器，输入节点N的电位以产生数字信号。

6. 发明申请

US20090219753A1 MAGNETIC MEMORY DEVICE 有权
标题翻译：磁记忆装置
公开(公告)号：US20090219753A1
公开(公告)日：2009-09-03
申请号：US12328546
申请日：2008-12-04
申请人： Mai Nozawa , Masanori Furuta , Daisuke Kurose , Tsutomu Sugawara
发明人： Mai Nozawa , Masanori Furuta , Daisuke Kurose , Tsutomu Sugawara
IPC分类号： G11C11/02
CPC分类号： G11C8/06 , G11C11/1673
摘要： A magnetic memory device including a plurality of word lines, a plurality of bit lines which intersect the word lines and are put into groups, a plurality of memory cells which are arranged at intersections between the bit lines and the word lines, each memory cell including a magnetic element and a transistor which are connected in series, a first decoder which sequentially selects the word lines, a second decoder which sequentially drives the bit lines of each group, a weighting adder which performs weighting addition of currents flowing on bit lines in a selected group to generate an added current signal, a current/voltage converter which converts the added current signal into a voltage signal, and an analog-to-digital converter which digitizes the voltage signal.
摘要翻译：一种磁存储装置，包括多个字线，与字线相交并分组的多个位线，布置在位线和字线之间的交点处的多个存储单元，每个存储单元包括串联连接的磁性元件和晶体管，顺序地选择字线的第一解码器，顺序地驱动每组的位线的第二解码器，对流过位线的电流进行加权相加的加权加法器选择组以产生相加的电流信号，将所加电流信号转换为电压信号的电流/电压转换器以及对电压信号进行数字化的模数转换器。

7. 发明授权

US07839676B2 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US07839676B2
公开(公告)日：2010-11-23
申请号：US12407156
申请日：2009-03-19
申请人： Daisuke Kurose , Masanori Furuta , Tsutomu Sugawara
发明人： Daisuke Kurose , Masanori Furuta , Tsutomu Sugawara
IPC分类号： G11C11/14
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A magnetic memory device includes a plurality of word lines, a plurality of bit lines arranged to intersect with the word lines, an MRAM cell array including a plurality of magnetic random access memory (MRAM) cells arranged at intersection portions between the word lines and the bit lines, a read current source which supplies a read current to the MRAM cells in a read mode, a sense amplifier which detects terminal voltages of the MRAM cells generated by the read current to generate a detection output signal, a latch circuit which latches the detection output signal to output read data, and a data write circuit which supplies a write current to the MRAM cells depending on write data in a write mode to perform writing and which supplies the write current to the MRAM cells depending on the read data in the read mode to perform rewriting.
摘要翻译：一种磁存储器件包括多个字线，多个位线布置成与字线相交，MRAM单元阵列包括多个磁性随机存取存储器（MRAM）单元，布置在字线和位线，以读取模式向MRAM单元提供读取电流的读取电流源，检测由读取电流产生的MRAM单元的端子电压以产生检测输出信号的读出放大器，锁存电路检测输出信号以输出读取数据;以及数据写入电路，其根据写入模式中的写入数据向MRAM单元提供写入电流，以执行写入，并根据读取的数据将写入电流提供给MRAM单元读取模式进行重写。

8. 发明申请

US20100054034A1 READ CIRCUIT AND READ METHOD 有权
标题翻译：读取电路和读取方法
公开(公告)号：US20100054034A1
公开(公告)日：2010-03-04
申请号：US12547945
申请日：2009-08-26
申请人： Masanori Furuta , Daisuke KUROSE , Tsutomu SUGAWARA
发明人： Masanori Furuta , Daisuke KUROSE , Tsutomu SUGAWARA
IPC分类号： G11C11/14 , G11C7/22 , G11C7/06
CPC分类号： G11C29/12 , G11C11/1673 , G11C13/004 , G11C27/024 , G11C29/1201 , G11C29/50 , G11C2013/0057
摘要： In a read circuit, a write circuit writes a data to be stored and/or a test data to the memory cell. A control circuit controls the write circuit to write the test data to the memory cell in a first phase, and to write the test data which is same as the first phase to the memory cell in a second phase. An integrator integrates voltages at one terminal of the memory cell during the first phase to obtain a first integrated voltage, and integrates voltages at one terminal of the memory cell during the second phase to obtain a second integrated voltage. A buffer stores the first integrated voltage. A comparator compares the first integrated voltage from the buffer with the second integrated voltage from the integrator to obtain the data.
摘要翻译：在读取电路中，写入电路将要存储的数据和/或测试数据写入存储单元。控制电路控制写入电路，以第一阶段将测试数据写入存储单元，并将与第一阶段相同的测试数据写入第二阶段的存储单元。积分器在第一阶段中将存储单元的一个端子处的电压进行积分，以获得第一积分电压，并且在第二阶段期间对存储单元的一个端子处的电压进行积分，以获得第二积分电压。缓冲器存储第一集成电压。比较器比较来自缓冲器的第一集成电压和来自积分器的第二集成电压以获得数据。

9. 发明申请

US20090237988A1 MAGNETIC MEMORY DEVICE 有权
标题翻译：磁记忆装置
公开(公告)号：US20090237988A1
公开(公告)日：2009-09-24
申请号：US12407156
申请日：2009-03-19
申请人： Daisuke KUROSE , Masanori Furuta , Tsutomu Sugawara
发明人： Daisuke KUROSE , Masanori Furuta , Tsutomu Sugawara
IPC分类号： G11C11/14 , G11C7/06 , G11C7/00
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A magnetic memory device includes a plurality of word lines, a plurality of bit lines arranged to intersect with the word lines, an MRAM cell array including a plurality of magnetic random access memory (MRAM) cells arranged at intersection portions between the word lines and the bit lines, a read current source which supplies a read current to the MRAM cells in a read mode, a sense amplifier which detects terminal voltages of the MRAM cells generated by the read current to generate a detection output signal, a latch circuit which latches the detection output signal to output read data, and a data write circuit which supplies a write current to the MRAM cells depending on write data in a write mode to perform writing and which supplies the write current to the MRAM cells depending on the read data in the read mode to perform rewriting.
摘要翻译：一种磁存储器件包括多个字线，多个位线布置成与字线相交，MRAM单元阵列包括多个磁性随机存取存储器（MRAM）单元，布置在字线和位线，以读取模式向MRAM单元提供读取电流的读取电流源，检测由读取电流产生的MRAM单元的端子电压以产生检测输出信号的读出放大器，锁存电路检测输出信号以输出读取数据;以及数据写入电路，其根据写入模式中的写入数据向MRAM单元提供写入电流，以执行写入，并根据读取的数据将写入电流提供给MRAM单元读取模式进行重写。

10. 发明授权

US08797205B2 A/D conversion device and radio device 有权
标题翻译： A / D转换装置和无线电装置
公开(公告)号：US08797205B2
公开(公告)日：2014-08-05
申请号：US13413793
申请日：2012-03-07
申请人： Masanori Furuta , Tetsuro Itakura
发明人： Masanori Furuta , Tetsuro Itakura
IPC分类号： H03M1/12
CPC分类号： H03M1/164 , H03M1/466
摘要： This A/D convertor includes: a first D/A conversion unit configured to sample an analog input signal, and to generate a first difference signal by performing successive comparison of the analog input signal based on a reference voltage; a precharge capacitor unit configured to hold the reference voltage; a first comparing unit configured to compare the first difference signal with a reference value to generate a first digital signal; and an amplifying unit configured to calculate by using the first difference signal and the reference voltage to generate a residual signal.
摘要翻译：该A / D转换器包括：第一D / A转换单元，被配置为对模拟输入信号进行采样，并且通过基于参考电压执行模拟输入信号的连续比较来产生第一差分信号; 配置为保持所述参考电压的预充电电容器单元; 第一比较单元，被配置为将所述第一差分信号与参考值进行比较，以产生第一数字信号; 以及放大单元，被配置为通过使用第一差分信号和参考电压来计算以产生残留信号。

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