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1. 发明申请

US20050227171A1 Lift-off positive resist composition 有权
标题翻译：剥离正性抗蚀剂组合物
公开(公告)号：US20050227171A1
公开(公告)日：2005-10-13
申请号：US11091666
申请日：2005-03-28
申请人： Daisuke Kawana , Tomotaka Yamada , Hiroshi Shimbori , Koki Tamura , Tomoyuki Ando , Takayuki Hosono
发明人： Daisuke Kawana , Tomotaka Yamada , Hiroshi Shimbori , Koki Tamura , Tomoyuki Ando , Takayuki Hosono
IPC分类号： G03C1/492 , G03F7/004 , G03F7/075
CPC分类号： G03F7/0045 , G03F7/0757
摘要： A lift-off positive resist composition capable of forming a fine lift-off pattern is provided. This composition comprises a base resin component (A) and an acid generator component (B) generating an acid under exposure, wherein the base resin component (A) is a silicone resin.
摘要翻译：提供能够形成微细剥离图案的剥离正型抗蚀剂组合物。该组合物包含产生暴露酸的基础树脂成分（A）和产酸成分（B），其中，所述基础树脂成分（A）为有机硅树脂。

2. 发明授权

US07318992B2 Lift-off positive resist composition 有权
标题翻译：剥离正性抗蚀剂组合物
公开(公告)号：US07318992B2
公开(公告)日：2008-01-15
申请号：US11091666
申请日：2005-03-28
申请人： Daisuke Kawana , Tomotaka Yamada , Hiroshi Shimbori , Koki Tamura , Tomoyuki Ando , Takayuki Hosono
发明人： Daisuke Kawana , Tomotaka Yamada , Hiroshi Shimbori , Koki Tamura , Tomoyuki Ando , Takayuki Hosono
IPC分类号： G03F7/039
CPC分类号： G03F7/0045 , G03F7/0757
摘要： A lift-off positive resist composition capable of forming a fine lift-off pattern is provided. This composition comprises a base resin component (A) and an acid generator component (B) generating an acid under exposure, wherein the base resin component (A) is a silicone resin.
摘要翻译：提供能够形成微细剥离图案的剥离正型抗蚀剂组合物。该组合物包含产生暴露酸的基础树脂成分（A）和产酸成分（B），其中，所述基础树脂成分（A）为有机硅树脂。

3. 发明申请

US20070009828A1 Positive resist composition, resist laminates and process for forming resist patterns 审中-公开
标题翻译：正抗蚀剂组合物，抗蚀剂层压体和形成抗蚀剂图案的方法
公开(公告)号：US20070009828A1
公开(公告)日：2007-01-11
申请号：US10560126
申请日：2004-06-11
申请人： Koki Tamura , Daisuke Kawana , Tomotaka Yamada , Takayuki Hosono , Taku Hirayama , Kazufumi Sato , Hiroshi Shimbori , Tomoyuki Ando
发明人： Koki Tamura , Daisuke Kawana , Tomotaka Yamada , Takayuki Hosono , Taku Hirayama , Kazufumi Sato , Hiroshi Shimbori , Tomoyuki Ando
IPC分类号： G03C1/00
CPC分类号： G03F7/0757 , G03F7/0045
摘要： A positive resist composition, comprising a resin component (A) that exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the component (A) includes either a silsesquioxane resin (A1) containing structural units (a1) represented by a general formula (I) shown below, structural units (a2) represented by a general formula (II) shown below, and structural units (a3) represented by a general formula (III) shown below, or a silsesquioxane resin (A2) containing structural units (al) represented by the general formula (I) shown below, and structural units (a2′) represented by a general formula (II′) shown below. In the general formulas below, R1 represents a straight-chain or branched alkylene group of 1 to 5 carbon atoms, R2 represents a straight-chain or branched alkylene group of 1 to 5 carbon atoms, R3 represents an acid dissociable, dissolution inhibiting group, R6 represents an alkyl group of 1 to 5 carbon atoms, R7 represents either an alkyl group of 1 to 5 carbon atoms or a hydrogen atom, and R8 represents an alicyclic hydrocarbon group of 5 to 15 carbon atoms.
摘要翻译：含有在酸作用下表现出增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物和暴露时产生酸的酸产生剂组分（B），其中组分（A）包括倍半硅氧烷树脂（A1）），由下述通式（I）表示的结构单元（a1），由下述通式（II）表示的结构单元（a2）和由以下所示的通式（III）表示的结构单元（a3），或含有下述通式（I）表示的结构单元（a1）的倍半硅氧烷树脂（A2）和由下述通式（II'）表示的结构单元（a2'）。在下列通式中，R 1表示1至5个碳原子的直链或支链亚烷基，R 2表示直链或支链的亚烷基， 1至5个碳原子，R 3表示酸解离的溶解抑制基团，R 6表示1至5个碳原子的烷基，R 7， / SUP>表示1〜5个碳原子的烷基或氢原子，R 8表示5〜15个碳原子的脂环族烃基。

4. 发明申请

US20050221225A1 Positive resist composition 有权
标题翻译：正抗蚀剂组成
公开(公告)号：US20050221225A1
公开(公告)日：2005-10-06
申请号：US11091618
申请日：2005-03-28
申请人： Daisuke Kawana , Tomotaka Yamada , Takayuki Hosono , Koki Tamura
发明人： Daisuke Kawana , Tomotaka Yamada , Takayuki Hosono , Koki Tamura
IPC分类号： G03F7/039 , G03F7/004 , G03F7/075 , H01L21/027 , G03C1/492
CPC分类号： G03F7/0757 , G03F7/0048 , Y10S430/106 , Y10S430/115 , Y10S430/12
摘要： A positive resist composition capable of forming a resist pattern having excellent shape is provided. This composition is a positive resist composition including a base resin component (A) and an acid generator component (B) generating an acid under exposure, which are dissolved in an organic solvent, wherein the base resin component (A) is a silicone resin, and the organic solvent contains propylene glycol monomethyl ether (x1) and a solvent (S2) having a boiling point higher than that of the propylene glycol monomethyl ether.
摘要翻译：提供能够形成具有优异形状的抗蚀剂图案的正性抗蚀剂组合物。该组合物是包含基质树脂组分（A）和产生暴露酸的酸产生剂组分（B）的正性抗蚀剂组合物，其溶解在有机溶剂中，其中基础树脂组分（A）是有机硅树脂，有机溶剂含有丙二醇单甲醚（x1）和沸点高于丙二醇单甲醚的溶剂（S2）。

5. 发明授权

US07261994B2 Positive resist composition 有权
标题翻译：正抗蚀剂组成
公开(公告)号：US07261994B2
公开(公告)日：2007-08-28
申请号：US11091617
申请日：2005-03-28
申请人： Takayuki Hosono , Koki Tamura , Daisuke Kawana , Tomotaka Yamada
发明人： Takayuki Hosono , Koki Tamura , Daisuke Kawana , Tomotaka Yamada
IPC分类号： G03F7/039
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0757 , Y10S430/115 , Y10S430/122
摘要： A positive resist composition having excellent mask linearity is provided. This composition is a positive resist composition comprising a base resin component (A) and an acid generator component (B) generating an acid under exposure, wherein the base resin component (A) is a silicone resin and the acid generator component (B) contains an onium salt-based acid generator (B1) containing a perfluoroalkyl sulfonate ion having 3 or 4 carbon atoms as an anion.
摘要翻译：提供了具有优异的掩模线性的正性抗蚀剂组合物。该组合物是包含产生暴露酸的基础树脂成分（A）和酸发生剂成分（B）的正性抗蚀剂组合物，其中，所述基础树脂成分（A）为硅树脂，所述酸发生剂成分（B）含有含有具有3或4个碳原子的全氟烷基磺酸根离子作为阴离子的鎓盐型酸发生剂（B1）。

6. 发明授权

US07416832B2 Positive resist composition 有权
标题翻译：正抗蚀剂组成
公开(公告)号：US07416832B2
公开(公告)日：2008-08-26
申请号：US11091618
申请日：2005-03-28
申请人： Daisuke Kawana , Tomotaka Yamada , Takayuki Hosono , Koki Tamura
发明人： Daisuke Kawana , Tomotaka Yamada , Takayuki Hosono , Koki Tamura
IPC分类号： G03C1/73 , G03F7/039
CPC分类号： G03F7/0757 , G03F7/0048 , Y10S430/106 , Y10S430/115 , Y10S430/12
摘要： A positive resist composition capable of forming a resist pattern having excellent shape is provided. This composition is a positive resist composition including a base resin component (A) and an acid generator component (B) generating an acid under exposure, which are dissolved in an organic solvent, wherein the base resin component (A) is a silicone resin, and the organic solvent contains propylene glycol monomethyl ether (x1) and a solvent (S2) having a boiling point higher than that of the propylene glycol monomethyl ether.
摘要翻译：提供能够形成具有优异形状的抗蚀剂图案的正性抗蚀剂组合物。该组合物是包含基质树脂组分（A）和产生暴露酸的酸产生剂组分（B）的正性抗蚀剂组合物，其溶解在有机溶剂中，其中基础树脂组分（A）是有机硅树脂，有机溶剂含有丙二醇单甲醚（x1）和沸点高于丙二醇单甲醚的溶剂（S2）。

7. 发明申请

US20090068586A1 SILSESQUIOXANE RESIN, POSITIVE RESIST COMPOSITION, RESIST LAMINATE, AND METHOD OF FORMING RESIST PATTERN 审中-公开
标题翻译： SILSESQUIOXANE树脂，积极抵抗组合物，耐腐蚀层压材料和形成耐力图案的方法
公开(公告)号：US20090068586A1
公开(公告)日：2009-03-12
申请号：US12247876
申请日：2008-10-08
申请人： Tsuyoshi Nakamura , Koki Tamura , Tomotaka Yamada , Taku Hirayama , Daisuke Kawana , Takayuki Hosono
发明人： Tsuyoshi Nakamura , Koki Tamura , Tomotaka Yamada , Taku Hirayama , Daisuke Kawana , Takayuki Hosono
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： C08G77/04 , C08G77/24 , G03F7/0392 , G03F7/0757 , Y10T428/31663
摘要： A silsesquioxane resin, a positive resist composition, a resist laminate, and a method of forming a resist pattern that are capable of suppressing a degas phenomenon are provided, and a silicon-containing resist composition and a method of forming a resist pattern that are ideally suited to immersion lithography are also provided. The silsesquioxane resin includes structural units represented by the general shown below [wherein, R1 and R2 each represent, independently, a straight chain, branched, or cyclic saturated aliphatic hydrocarbon group; R3 represents an acid dissociable, dissolution inhibiting group containing a hydrocarbon group that includes an aliphatic monocyclic or polycyclic group; R4 represents a hydrogen atom, or a straight chain, branched, or cyclic alkyl group; X represents an alkyl group of 1 to 8 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom; and m represents an integer from 1 to 3].
摘要翻译：提供倍半硅氧烷树脂，正性抗蚀剂组合物，抗蚀剂层压体以及能够抑制脱气现象的形成抗蚀剂图案的方法，以及理想地形成抗蚀剂图案的含硅抗蚀剂组合物和方法也提供了适用于浸没式光刻技术。倍半硅氧烷树脂包括由下述通式表示的结构单元[其中，R 1和R 2各自独立地表示直链，支链或环状的饱和脂族烃基; R3表示含有脂肪族单环或多环基团的含有烃基的酸解离性溶解抑制基团， R4表示氢原子，或直链，支链或环状烷基; X表示1〜8个碳原子的烷基，其中至少一个氢原子被氟原子取代; m表示1〜3的整数]。

8. 发明申请

US20060222866A1 Silsesquioxane resin, positive resist composition,layered product including resist and method of forming resist pattern 审中-公开
标题翻译：倍半硅氧烷树脂，正性抗蚀剂组合物，包括抗蚀剂的层叠体和形成抗蚀剂图案的方法
公开(公告)号：US20060222866A1
公开(公告)日：2006-10-05
申请号：US10546575
申请日：2004-02-25
申请人： Tsuyoshi Nakamura , Koki Tamura , Tomotaka Yamada , Taku Hirayama , Daisuke Kawana , Takayuki Hosono
发明人： Tsuyoshi Nakamura , Koki Tamura , Tomotaka Yamada , Taku Hirayama , Daisuke Kawana , Takayuki Hosono
IPC分类号： B32B27/00 , C08L83/04 , C08G77/04 , B32B9/04
CPC分类号： C08G77/04 , C08G77/24 , G03F7/0392 , G03F7/0757 , Y10T428/31663
摘要： A silsesquioxane resin, a positive resist composition, a resist laminate, and a method of forming a resist pattern that are capable of suppressing a degas phenomenon are provided, and a silicon-containing resist composition and a method of forming a resist pattern that are ideally suited to immersion lithography are also provided. The silsesquioxane resin includes structural units represented by the general shown below [wherein, R1 and R2 each represent, independently, a straight chain, branched, or cyclic saturated aliphatic hydrocarbon group; R3 represents an acid dissociable, dissolution inhibiting group containing a hydrocarbon group that includes an aliphatic monocyclic or polycyclic group; R4 represents a hydrogen atom, or a straight chain, branched, or cyclic alkyl group; X represents an alkyl group of 1 to 8 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom; and m represents an integer from 1 to 3].
摘要翻译：提供倍半硅氧烷树脂，正性抗蚀剂组合物，抗蚀剂层压体以及能够抑制脱气现象的形成抗蚀剂图案的方法，以及理想地形成抗蚀剂图案的含硅抗蚀剂组合物和方法也提供了适用于浸没式光刻技术。倍半硅氧烷树脂包括由下列通式表示的结构单元[其中，R 1和R 2各自独立地表示直链，支链或环状的饱和脂族烃组; R 3表示含有脂肪族单环或多环基团的含有烃基的酸解离性溶解抑制基团， R 4表示氢原子，或直链，支链或环状的烷基; X表示1〜8个碳原子的烷基，其中至少一个氢原子被氟原子取代; m表示1〜3的整数]。

9. 发明申请

US20050227170A1 Positive resist composition 有权
标题翻译：正抗蚀剂组成
公开(公告)号：US20050227170A1
公开(公告)日：2005-10-13
申请号：US11091617
申请日：2005-03-28
申请人： Takayuki Hosono , Koki Tamura , Daisuke Kawana , Tomotaka Yamada
发明人： Takayuki Hosono , Koki Tamura , Daisuke Kawana , Tomotaka Yamada
IPC分类号： G03F7/039 , G03F7/004 , G03F7/075 , H01L21/027 , G03C1/492
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0757 , Y10S430/115 , Y10S430/122
摘要： A positive resist composition having excellent mask linearity is provided. This composition is a positive resist composition comprising a base resin component (A) and an acid generator component (B) generating an acid under exposure, wherein the base resin component (A) is a silicone resin and the acid generator component (B) contains an onium salt-based acid generator (B1) containing a perfluoroalkyl sulfonate ion having 3 or 4 carbon atoms as an anion.
摘要翻译：提供了具有优异的掩模线性的正性抗蚀剂组合物。该组合物是包含产生暴露酸的基础树脂成分（A）和酸发生剂成分（B）的正性抗蚀剂组合物，其中，所述基础树脂成分（A）为硅树脂，所述酸发生剂成分（B）含有含有具有3或4个碳原子的全氟烷基磺酸根离子作为阴离子的鎓盐型酸发生剂（B1）。

10. 发明申请

US20090220889A1 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN 有权
标题翻译：光敏树脂组合物和形成图案的方法
公开(公告)号：US20090220889A1
公开(公告)日：2009-09-03
申请号：US12092701
申请日：2006-10-10
申请人： Kazufumi Sato , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Tomotaka Yamada , Toshikazu Takayama
发明人： Kazufumi Sato , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Tomotaka Yamada , Toshikazu Takayama
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0757
摘要： A photosensitive resin composition which has a quenching function and satisfactory long-term stability and which, in particular, can be prevented from suffering sensitivity abnormality caused by change with time during storage (change from given sensitivity); and a method of forming a pattern from the composition. The resist composition contains a base resin comprising, as the main component, a silicon-containing polymer which is a siloxane or silsesquioxane polymer or the like, the composition containing, as a quencher, a specific sulfonium compound in place of a nitrogenous compound.
摘要翻译：具有淬火功能和令人满意的长期稳定性的感光性树脂组合物，特别是可以防止由于储存期间随着时间的变化而引起的敏感性异常（从给定的灵敏度变化）; 以及从组合物形成图案的方法。抗蚀剂组合物含有作为主要成分的含有硅氧烷或倍半硅氧烷聚合物等的含硅聚合物的基础树脂，该组合物含有作为猝灭剂的特定锍化合物代替含氮化合物。

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