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1. 发明申请

US20070037099A1 Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method 失效
标题翻译：碱溶液及其制造方法，碱性溶液应用于图案形成方法，抗蚀膜除去方法，溶液施加方法，基板处理方法，溶液供给方法和半导体器件制造方法
公开(公告)号：US20070037099A1
公开(公告)日：2007-02-15
申请号：US11493629
申请日：2006-07-27
申请人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
发明人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
IPC分类号： G03C5/00
CPC分类号： H01L21/31133 , G03F7/3021 , G03F7/322 , G03F7/422 , G03F7/425
摘要： A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.
摘要翻译：一种碱性溶液的制造方法，包括将具有氧化性质或还原性的气态分子溶解在碱性水溶液中。

2. 发明授权

US07399578B2 Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method 失效
标题翻译：碱溶液及其制造方法，碱性溶液应用于图案形成方法，抗蚀膜除去方法，溶液施加方法，基板处理方法，溶液供给方法和半导体器件制造方法
公开(公告)号：US07399578B2
公开(公告)日：2008-07-15
申请号：US11493629
申请日：2006-07-27
申请人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
发明人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
IPC分类号： G03F7/32
CPC分类号： H01L21/31133 , G03F7/3021 , G03F7/322 , G03F7/422 , G03F7/425
摘要： A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.
摘要翻译：一种碱性溶液的制造方法，包括将具有氧化性质或还原性的气态分子溶解在碱性水溶液中。

3. 发明授权

US07097960B2 Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method 失效
公开(公告)号：US07097960B2
公开(公告)日：2006-08-29
申请号：US10824482
申请日：2004-04-15
申请人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
发明人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
IPC分类号： G03F7/32 , G03F7/38 , G03F7/30 , G03F7/40
CPC分类号： H01L21/31133 , G03F7/3021 , G03F7/322 , G03F7/422 , G03F7/425
摘要： A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.

4. 发明申请

US20050058944A1 Alkaline solution and manufacturing method, and alkaline solution applied to patern forming method, resist film removing method, solution application method, substrate treatment method, solotion supply method, and semiconductor device manufacturing method 失效
标题翻译：碱溶液及制造方法，碱性溶液应用于成型方法，抗蚀膜除去方法，溶液施加方法，基板处理方法，浸渍供给方法和半导体器件制造方法
公开(公告)号：US20050058944A1
公开(公告)日：2005-03-17
申请号：US10824482
申请日：2004-04-15
申请人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
发明人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
IPC分类号： B01J19/00 , B05C5/02 , B05C11/10 , B05D1/26 , B05D3/00 , B05D3/10 , B05D7/00 , B05D7/24 , C02F1/68 , C09K3/00 , G03F7/30 , G03F7/32 , G03F7/42 , H01L21/027 , H01L21/311 , G03C5/00
CPC分类号： H01L21/31133 , G03F7/3021 , G03F7/322 , G03F7/422 , G03F7/425
摘要： A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.
摘要翻译：一种碱性溶液的制造方法，包括将具有氧化性质或还原性的气态分子溶解在碱性水溶液中。

5. 发明授权

US06742944B2 ALKALINE SOLUTION AND MANUFACTURING METHOD, AND ALKALINE SOLUTION APPLIED TO PATTERN FORMING METHOD, RESIST FILM REMOVING METHOD, SOLUTION APPLICATION METHOD, SUBSTRATE TREATMENT METHOD, SOLUTION SUPPLY METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 失效
标题翻译：碱解决方案和制造方法以及应用于图案形成方法，电阻膜去除方法，溶液应用方法，基板处理方法，解决方案供应方法和半导体器件制造方法的碱性溶液
公开(公告)号：US06742944B2
公开(公告)日：2004-06-01
申请号：US10144025
申请日：2002-05-14
申请人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
发明人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
IPC分类号： G03D500
CPC分类号： H01L21/31133 , G03F7/3021 , G03F7/322 , G03F7/422 , G03F7/425
摘要： A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.
摘要翻译：一种碱性溶液的制造方法，包括将具有氧化性质或还原性的气态分子溶解在碱性水溶液中。

6. 发明授权

US07669608B2 Substrate treating method, substrate-processing apparatus, developing method, method of manufacturing a semiconductor device, and method of cleaning a developing solution nozzle 失效
标题翻译：基板处理方法，基板处理装置，显影方法，半导体装置的制造方法以及清洗显影液喷嘴的方法
公开(公告)号：US07669608B2
公开(公告)日：2010-03-02
申请号：US10988639
申请日：2004-11-16
申请人： Kei Hayasaki , Shinichi Ito , Tatsuhiko Ema , Riichiro Takahashi
发明人： Kei Hayasaki , Shinichi Ito , Tatsuhiko Ema , Riichiro Takahashi
IPC分类号： B08B3/00
CPC分类号： G03F7/3021 , H01L21/31133 , Y10S134/902
摘要： There is disclosed a substrate treating method comprising supplying a treating solution onto a substrate, and continuously discharging a first cleaning solution to the substrate from a first discharge region disposed in a nozzle, while moving the nozzle and substrate with respect to each other in one direction, wherein a length of a direction crossing at right angles to the direction of the first discharge region is equal to or more than a maximum diameter or longest side of the substrate, the nozzle continuously spouts a first gas to the substrate from a first jet region, and the length of a direction crossing at right angles to the direction of the first jet region is equal to or more than the maximum diameter or longest side of the substrate.
摘要翻译：公开了一种基板处理方法，其特征在于，将处理液供给到基板上，并且，在设置在喷嘴中的第一排出区域将所述第一清洗液连续地排出到所述基板，同时使所述喷嘴和基板在一个方向上相对移动其中与所述第一放电区域的方向成直角相交的方向的长度等于或大于所述基板的最大直径或最长侧，所述喷嘴从第一喷射区域向所述基板连续地喷出第一气体并且与第一喷射区域的方向成直角交叉的方向的长度等于或大于基板的最大直径或最长侧。

7. 发明授权

US07018481B2 Substrate treating method, substrate-processing apparatus, developing method, method of manufacturing a semiconductor device, and method of cleaning a developing solution nozzle 失效
标题翻译：基板处理方法，基板处理装置，显影方法，半导体装置的制造方法以及清洗显影液喷嘴的方法
公开(公告)号：US07018481B2
公开(公告)日：2006-03-28
申请号：US10351422
申请日：2003-01-27
申请人： Kei Hayasaki , Shinichi Ito , Tatsuhiko Ema , Riichiro Takahashi
发明人： Kei Hayasaki , Shinichi Ito , Tatsuhiko Ema , Riichiro Takahashi
IPC分类号： G03F7/30 , B08B1/04 , B08B3/02 , B08B5/02
CPC分类号： G03F7/3021 , H01L21/31133 , Y10S134/902
摘要： There is disclosed a substrate treating method comprising supplying a treating solution onto a substrate, and continuously discharging a first cleaning solution to the substrate from a first discharge region disposed in a nozzle, while moving the nozzle and substrate with respect to each other in one direction, wherein a length of a direction crossing at right angles to the direction of the first discharge region is equal to or more than a maximum diameter or longest side of the substrate, the nozzle continuously spouts a first gas to the substrate from a first jet region, and the length of a direction crossing at right angles to the direction of the first jet region is equal to or more than the maximum diameter or longest side of the substrate.
摘要翻译：公开了一种基板处理方法，其特征在于，将处理液供给到基板上，并且，在设置在喷嘴中的第一排出区域将所述第一清洗液连续地排出到所述基板，同时使所述喷嘴和基板在一个方向上相对移动其中与所述第一放电区域的方向成直角相交的方向的长度等于或大于所述基板的最大直径或最长侧，所述喷嘴从第一喷射区域向所述基板连续地喷出第一气体并且与第一喷射区域的方向成直角交叉的方向的长度等于或大于基板的最大直径或最长侧。

8. 发明申请

US20050087217A1 Substrate treating method, substrate-processing apparatus, developing method, method of manufacturing a semiconductor device, and method of cleaning a developing solution nozzle 失效
标题翻译：基板处理方法，基板处理装置，显影方法，半导体装置的制造方法以及清洗显影液喷嘴的方法
公开(公告)号：US20050087217A1
公开(公告)日：2005-04-28
申请号：US10988639
申请日：2004-11-16
申请人： Kei Hayasaki , Shinichi Ito , Tatsuhiko Ema , Riichiro Takahashi
发明人： Kei Hayasaki , Shinichi Ito , Tatsuhiko Ema , Riichiro Takahashi
IPC分类号： H01L21/027 , G03F7/30 , H01L21/311 , B08B3/00
CPC分类号： G03F7/3021 , H01L21/31133 , Y10S134/902
摘要： There is disclosed a substrate treating method comprising supplying a treating solution onto a substrate, and continuously discharging a first cleaning solution to the substrate from a first discharge region disposed in a nozzle, while moving the nozzle and substrate with respect to each other in one direction, wherein a length of a direction crossing at right angles to the direction of the first discharge region is equal to or more than a maximum diameter or longest side of the substrate, the nozzle continuously spouts a first gas to the substrate from a first jet region, and the length of a direction crossing at right angles to the direction of the first jet region is equal to or more than the maximum diameter or longest side of the substrate.
摘要翻译：公开了一种基板处理方法，其特征在于，将处理液供给到基板上，并且，在设置在喷嘴中的第一排出区域将所述第一清洗液连续地排出到所述基板，同时使所述喷嘴和基板在一个方向上相对移动其中与所述第一放电区域的方向成直角相交的方向的长度等于或大于所述基板的最大直径或最长侧，所述喷嘴从第一喷射区域向所述基板连续地喷出第一气体并且与第一喷射区域的方向成直角交叉的方向的长度等于或大于基板的最大直径或最长侧。

9. 发明授权

US07727853B2 Processing method, manufacturing method of semiconductor device, and processing apparatus 失效
标题翻译：半导体装置的加工方法，制造方法以及加工装置
公开(公告)号：US07727853B2
公开(公告)日：2010-06-01
申请号：US12216228
申请日：2008-07-01
申请人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Riichiro Takahashi
发明人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Riichiro Takahashi
IPC分类号： H01L21/76
CPC分类号： H01L23/544 , B23K26/066 , B23K26/364 , B23K26/40 , B23K2103/172 , G03F7/2026 , G03F7/70341 , G03F9/7076 , G03F9/708 , G03F9/7084 , G21K5/10 , H01J2237/30438 , H01L2223/54453 , H01L2924/0002 , Y10S438/949 , H01L2924/00
摘要： A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.
摘要翻译：一种处理方法，用于在形成在基板上的膜中选择性地减少或去除待曝光的区域，该方法包括相对地扫描基板上的形状比整个第一区域要暴露的整个第一区域的第一曝光灯区域，以选择性地去除或减少要暴露的第一区域，并且用第二曝光光将待暴露的整个第一区域暴露在整个第一区域内的整个第二区域，以选择性地暴露待暴露的整个第二区域。

10. 发明授权

US06818387B2 Method of forming a pattern 失效
标题翻译：形成图案的方法
公开(公告)号：US06818387B2
公开(公告)日：2004-11-16
申请号：US10075619
申请日：2002-02-15
申请人： Riichiro Takahashi , Kei Hayasaki , Shinichi Ito
发明人： Riichiro Takahashi , Kei Hayasaki , Shinichi Ito
IPC分类号： G03F726
CPC分类号： G03F7/322 , G03F7/38
摘要： There is disclosed, as an aspect, a method of forming a pattern which comprising coating a photosensitive resist film on a surface of substrate, subjecting the photosensitive resist film to an exposure process, coating an oxidizing liquid having an oxidative effect on a surface of the photosensitive resist film that has been subjected to the exposure process to thereby perform a pretreatment wherein the surface of the resist film is caused to oxidize by the oxidizing liquid to form an oxide layer thereon, feeding a developing solution to the photosensitive resist film whose surface has been oxidized to thereby perform a development of the resist film, and feeding a rinsing solution to a surface of the substrate to wash the substrate.
摘要翻译：作为一个方面，公开了一种形成图案的方法，该方法包括在基材表面上涂布光敏抗蚀剂膜，对感光性抗蚀剂膜进行曝光处理，在其表面上涂布具有氧化作用的氧化液体已经进行了曝光处理的光敏抗蚀剂膜，由此进行预处理，其中使抗氧化膜的表面被氧化液体氧化以在其上形成氧化物层，将显影液供给到表面具有的光敏抗蚀剂膜被氧化，从而进行抗蚀剂膜的显影，并将漂洗溶液供给到基板的表面以洗涤基板。

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