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1. 发明申请

US20080182423A1 SUBSTRATE PROCESSING APPARATUS AND GAS SUPPLY METHOD 有权
标题翻译：基板加工设备和气体供应方法
公开(公告)号：US20080182423A1
公开(公告)日：2008-07-31
申请号：US12014537
申请日：2008-01-15
申请人： Daisuke Hayashi , Morihiro Takanashi
发明人： Daisuke Hayashi , Morihiro Takanashi
IPC分类号： H01L21/306
CPC分类号： H01L21/31116 , H01L21/02071
摘要： A substrate processing apparatus that can prevent formation of deposit in openings of a plurality of gas supply holes leading into a processing chamber. Each of the gas supply holes is configured to uniformly supply a processing gas, whose molecules are turned into clusters, into the processing chamber and to prevent liquefaction of processing gas when the processing gas is supplied into the processing chamber.
摘要翻译：一种能够防止在通向处理室的多个气体供给孔的开口部形成沉积物的基板处理装置。每个气体供给孔被构造成将处理气体均匀地供给到处理室中，并且当处理气体被供给到处理室中时，防止处理气体的液化。

2. 发明授权

US08003920B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US08003920B2
公开(公告)日：2011-08-23
申请号：US12020644
申请日：2008-01-28
申请人： Daisuke Hayashi , Morihiro Takanashi
发明人： Daisuke Hayashi , Morihiro Takanashi
IPC分类号： H01L21/683 , H05B3/20 , F27B5/06
CPC分类号： H01L21/68742
摘要： A substrate processing apparatus of which through holes in a mounting stage can be properly sealed. A substrate processing apparatus comprises a plate-like mounting stage having a plurality of first through holes, a base member including a plurality of second through holes that have female thread portions, a plurality of pin-shaped members being passed through and fitted into the first and second through holes and including flange portions, a plurality of sealing surfaces, and a plurality of sealing members disposed such as to enclose openings of the first through holes. One ends of the pin-shaped members project out from the sealing surfaces, and the other ends have male thread portions capable of engaging with female thread portions of the base member. When the base member moves away from the mounting stage, an end of each of the female thread portions comes into abutment with an end of each of the male thread portions.
摘要翻译：可以适当地密封其中安装台中的通孔的基板处理装置。一种基板处理装置，包括具有多个第一通孔的板状安装台，具有内螺纹部的多个第二通孔的基座构件，多个销状构件穿过并嵌入第一通孔和第二通孔，包括凸缘部分，多个密封表面和多个密封件，这些密封件设置成包围第一通孔的开口。销状构件的一端从密封面突出，另一端具有能够与基部构件的阴螺纹部接合的阳螺纹部。当基座部件从安装台移开时，每个内螺纹部分的端部与每个阳螺纹部分的端部抵接。

3. 发明授权

US08465593B2 Substrate processing apparatus and gas supply method 有权
标题翻译：基板加工装置及供气方式
公开(公告)号：US08465593B2
公开(公告)日：2013-06-18
申请号：US12014537
申请日：2008-01-15
申请人： Daisuke Hayashi , Morihiro Takanashi
发明人： Daisuke Hayashi , Morihiro Takanashi
IPC分类号： C23C16/448 , C23C16/455 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/06
CPC分类号： H01L21/31116 , H01L21/02071
摘要： A substrate processing apparatus that can prevent formation of deposit in openings of a plurality of gas supply holes leading into a processing chamber. Each of the gas supply holes is configured to uniformly supply a processing gas, whose molecules are turned into clusters, into the processing chamber and to prevent liquefaction of processing gas when the processing gas is supplied into the processing chamber.
摘要翻译：一种能够防止在通向处理室的多个气体供给孔的开口部形成沉积物的基板处理装置。每个气体供给孔被构造成将处理气体均匀地供给到处理室中，并且当处理气体被供给到处理室中时，防止处理气体的液化。

4. 发明申请

US20100043894A1 VALVE ELEMENT, PARTICLE ENTRY PREVENTIVE MECHANISM, EXHAUST CONTROL APPARATUS, AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：阀元件，颗粒入口防止机构，排气控制装置和基板处理装置
公开(公告)号：US20100043894A1
公开(公告)日：2010-02-25
申请号：US12511721
申请日：2009-07-29
申请人： Tsuyoshi Moriya , Eiichi Sugawara , Morihiro Takanashi
发明人： Tsuyoshi Moriya , Eiichi Sugawara , Morihiro Takanashi
IPC分类号： F16K51/00
CPC分类号： H01L21/67011 , F16K51/02 , H01L21/67017 , Y10T137/794
摘要： A valve element that can prevent particles rebounding from an exhausting pump from entering a chamber and also prevent a decrease in exhaust efficiency. The valve element has a through hole that penetrates the valve element along an exhaust flow in an exhaust flow passage between the chamber in which a substrate is subjected to predetermined processing and the exhausting pump having rotary blades rotating at high speed, and a particle trap that covers the through hole. The particle trap has a plurality of preventive members that are arranged such as to obstruct particles rebounding from the exhausting pump. The ratio of openings of the particle trap to the exhaust flow in the exhaust flow passage is not less than a predetermined value.
摘要翻译：可以防止颗粒从排气泵反弹的阀元件进入腔室并且还防止排气效率的降低。阀元件具有贯通孔，该通孔沿着排气流通道，该排气流在其中经受预定处理的基板和具有高速旋转的旋转刀片的排气泵之间的排气流通道中，以及颗粒捕集器覆盖通孔。颗粒捕集器具有多个防止构件，其布置成阻止从排气泵反弹的颗粒。颗粒捕集器的开口与排气流路中的排气流量的比率不小于预定值。

5. 发明授权

US08349085B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US08349085B2
公开(公告)日：2013-01-08
申请号：US12023327
申请日：2008-01-31
申请人： Shigeru Tahara , Seiichi Takayama , Morihiro Takanashi
发明人： Shigeru Tahara , Seiichi Takayama , Morihiro Takanashi
IPC分类号： C23C16/458 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/401 , C23C16/4401 , H01L21/3105 , H01L21/6719 , H01L21/67748
摘要： A substarate processing apparatus capable of reducing the capacity of a space in an internal chamber. The internal chamber is housed in a space in an external chamber. A gas supply unit supplies a process gas into the space in the internal chamber. The space in the external chamber is under a reduced pressure or filled with an inert gas. An enclosure being movable and included in the internal chamber defines the space in the internal chamber with a stage heater included in the internal chamber. When a wafer is transferred in and out by a transfer arm used to transfer the wafer, the enclosure exits out of a motion range within which the transfer arm can move.
摘要翻译：能够降低内部空间的容量的基本处理装置。内部腔室容纳在外部空间中。气体供应单元将处理气体供应到内部室中的空间中。外部室内的空间处于减压状态或填充惰性气体。可移动并且包括在内部室中的外壳限定内部室中的空间，其中包括在内部室中的阶段加热器。当晶片通过用于传送晶片的转移臂传入和移出时，外壳离开传送臂可移动的运动范围。

6. 发明申请

US20100206846A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20100206846A1
公开(公告)日：2010-08-19
申请号：US12706094
申请日：2010-02-16
申请人： Eiichi Nishimura , Masato Morishima , Morihiro Takanashi , Akitaka Shimizu , Yuichi Setsuhara
发明人： Eiichi Nishimura , Masato Morishima , Morihiro Takanashi , Akitaka Shimizu , Yuichi Setsuhara
IPC分类号： C23F1/08 , C23C16/00 , C23C16/505 , C23F1/00
CPC分类号： H01L21/31138 , C23C16/45565 , C23C16/45574 , C23C16/505 , G03F7/427 , H01J37/32357 , H01L21/02063 , H01L21/0273
摘要： A substrate processing apparatus that can appropriately carry out desired plasma processing on a substrate. The substrate is accommodated in an accommodating chamber. An ion trap partitions the accommodating chamber into a plasma producing chamber and a substrate processing chamber. High-frequency antennas are disposed in the plasma producing chamber. A process gas is introduced into the plasma producing chamber. The substrate is mounted on a mounting stage disposed in the substrate processing chamber, and a bias voltage is applied to the mounting stage. The ion trap has grounded conductors and insulating materials covering surfaces of the conductors.
摘要翻译：能够适当地进行基板上的等离子体处理的基板处理装置。基板容纳在容纳室中。离子阱将容纳室分隔成等离子体产生室和基板处理室。高频天线设置在等离子体产生室中。将工艺气体引入等离子体产生室。基板安装在设置在基板处理室中的安装台上，并且偏压被施加到安装台。离子阱具有接地导体和覆盖导体表面的绝缘材料。

7. 发明申请

US20090188428A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工设备
公开(公告)号：US20090188428A1
公开(公告)日：2009-07-30
申请号：US12361004
申请日：2009-01-28
申请人： Isamu SAKURAGI , Shigeru Tahara , Kumiko Yamazaki , Ryo Nonaka , Morihiro Takanashi , Eiichi Nishimura
发明人： Isamu SAKURAGI , Shigeru Tahara , Kumiko Yamazaki , Ryo Nonaka , Morihiro Takanashi , Eiichi Nishimura
IPC分类号： B05C13/00 , B01J19/00
CPC分类号： H01L21/67109 , H01L21/67017
摘要： A substrate processing apparatus includes a processing vessel; a mounting table for mounting the substrate thereon in the processing vessel; a gas inlet unit provided in the processing vessel; a gas supply mechanism for supplying a hydrogen-containing gas into the processing vessel through the gas inlet unit; a gas discharge port provided at the processing vessel; a gas exhaust mechanism for exhausting an inside of the processing vessel through the gas discharge port; a catalyst provided in the processing vessel; and a heating unit for heating the catalyst. Hydrogen radicals are formed in the processing vessel by a catalytic cracking reaction between the hydrogen-containing gas and the catalyst of high temperature, and the substrate is processed by the hydrogen radicals.
摘要翻译：基板处理装置包括处理容器; 用于将基板安装在处理容器中的安装台; 设置在处理容器中的气体入口单元; 用于通过气体入口单元将含氢气体供应到处理容器中的气体供给机构; 设置在处理容器的气体排出口; 排气机构，用于通过排气口排出处理容器的内部; 设置在处理容器中的催化剂; 以及用于加热催化剂的加热单元。通过含氢气体和高温催化剂之间的催化裂化反应在处理容器中形成氢根，并且通过氢原子处理衬底。

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