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1. 发明授权

US07608889B2 Lateral diffusion metal-oxide-semiconductor structure 有权
标题翻译：侧向扩散金属氧化物半导体结构
公开(公告)号：US07608889B2
公开(公告)日：2009-10-27
申请号：US11864278
申请日：2007-09-28
申请人： Dah-Chuen Ho , Chien-Shao Tang , Zhe-Yi Wang , Yu-Chang Jong
发明人： Dah-Chuen Ho , Chien-Shao Tang , Zhe-Yi Wang , Yu-Chang Jong
IPC分类号： H01L29/78
CPC分类号： H01L29/7835 , H01L29/0653 , H01L29/4933 , H01L29/66659
摘要： A lateral diffusion metal-oxide-semiconductor (LDMOS) structure comprises a gate, a source, a drain and a shallow trench isolation. The shallow trench isolation is formed between the drain and the gate to withstand high voltages, applied to the drain, and is associated with the semiconductor substrate to form a recess. As such, the surface of the shallow trench isolation is lower than the surface of the semiconductor substrate. Optionally, the surface of the shallow trench isolation is lower than the surface of the semiconductor substrate by 300-1500 angstroms.
摘要翻译：横向扩散金属氧化物半导体（LDMOS）结构包括栅极，源极，漏极和浅沟槽隔离。浅沟槽隔离形成在漏极和栅极之间以承受施加到漏极上的高电压，并且与半导体衬底相关联以形成凹部。因此，浅沟槽隔离的表面低于半导体衬底的表面。可选地，浅沟槽隔离的表面比半导体衬底的表面低300-1500埃。

2. 发明申请

US20090294865A1 Schottky Diodes Having Low-Voltage and High-Concentration Rings 有权
标题翻译：具有低电压和高浓度环的肖特基二极管
公开(公告)号：US20090294865A1
公开(公告)日：2009-12-03
申请号：US12127629
申请日：2008-05-27
申请人： Chien-Shao Tang , Dah-Chuen Ho , Yu-Chang Jong , Zhe-Yi Wang , Yuh-Hwa Chang , Yogendra Yadav
发明人： Chien-Shao Tang , Dah-Chuen Ho , Yu-Chang Jong , Zhe-Yi Wang , Yuh-Hwa Chang , Yogendra Yadav
IPC分类号： H01L27/06
CPC分类号： H01L27/0629 , H01L29/0619 , H01L29/0649 , H01L29/872
摘要： An integrated circuit structure includes a semiconductor substrate; a first well region of a first conductivity type over the semiconductor substrate; a second well region of a second conductivity type opposite the first conductivity type encircling the first well region; and a metal-containing layer over and adjoining the first well region and extending over at least an inner portion of the second well region. The metal-containing layer and the first well region form a Schottky barrier. The integrated circuit structure further includes an isolation region encircling the metal-containing layer; and a third well region of the second conductivity type encircling at least a central portion of the first well region. The third well region has a higher impurity concentration than the second well region, and includes a top surface adjoining the metal-containing layer, and a bottom surface higher than bottom surfaces of the first and the second well regions.
摘要翻译：集成电路结构包括半导体衬底; 半导体衬底上的第一导电类型的第一阱区; 与第一导电类型相反的第二导电类型的环绕第一阱区的第二阱区; 以及在所述第一阱区上并邻接所述第一阱区并且在所述第二阱区的至少内部部分上延伸的含金属层。含金属层和第一阱区形成肖特基势垒。所述集成电路结构还包括环绕所述含金属层的隔离区域; 以及第二导电类型的第三阱区域，其环绕至少第一阱区域的中心部分。第三阱区域具有比第二阱区域更高的杂质浓度，并且包括邻近含金属层的顶表面和高于第一阱区域和第二阱区域的底表面的底表面。

3. 发明授权

US08324705B2 Schottky diodes having low-voltage and high-concentration rings 有权
标题翻译：具有低电压和高浓度环的肖特基二极管
公开(公告)号：US08324705B2
公开(公告)日：2012-12-04
申请号：US12127629
申请日：2008-05-27
申请人： Chien-Shao Tang , Dah-Chuen Ho , Yu-Chang Jong , Zhe-Yi Wang , Yuh-Hwa Chang , Yogendra Yadav
发明人： Chien-Shao Tang , Dah-Chuen Ho , Yu-Chang Jong , Zhe-Yi Wang , Yuh-Hwa Chang , Yogendra Yadav
IPC分类号： H01L29/872
CPC分类号： H01L27/0629 , H01L29/0619 , H01L29/0649 , H01L29/872
摘要： An integrated circuit structure includes a semiconductor substrate; a first well region of a first conductivity type over the semiconductor substrate; a second well region of a second conductivity type opposite the first conductivity type encircling the first well region; and a metal-containing layer over and adjoining the first well region and extending over at least an inner portion of the second well region. The metal-containing layer and the first well region form a Schottky barrier. The integrated circuit structure further includes an isolation region encircling the metal-containing layer; and a third well region of the second conductivity type encircling at least a central portion of the first well region. The third well region has a higher impurity concentration than the second well region, and includes a top surface adjoining the metal-containing layer, and a bottom surface higher than bottom surfaces of the first and the second well regions.
摘要翻译：集成电路结构包括半导体衬底; 半导体衬底上的第一导电类型的第一阱区; 与第一导电类型相反的第二导电类型的环绕第一阱区的第二阱区; 以及在所述第一阱区上并邻接所述第一阱区并且在所述第二阱区的至少内部部分上延伸的含金属层。含金属层和第一阱区形成肖特基势垒。所述集成电路结构还包括环绕所述含金属层的隔离区域; 以及第二导电类型的第三阱区域，其环绕至少第一阱区域的中心部分。第三阱区域具有比第二阱区域更高的杂质浓度，并且包括邻近含金属层的顶表面和高于第一阱区域和第二阱区域的底表面的底表面。

4. 发明授权

US07808069B2 Robust structure for HVPW Schottky diode 有权
标题翻译： HVPW肖特基二极管的稳健结构
公开(公告)号：US07808069B2
公开(公告)日：2010-10-05
申请号：US12347478
申请日：2008-12-31
申请人： Dah-Chuen Ho , Chien-Shao Tang , Yu-Chang Jong , Zhe-Yi Wang
发明人： Dah-Chuen Ho , Chien-Shao Tang , Yu-Chang Jong , Zhe-Yi Wang
IPC分类号： H01L27/095
CPC分类号： H01L29/872 , H01L29/0619
摘要： A high-voltage Schottky diode including a deep P-well having a first width is formed on the semiconductor substrate. A doped P-well is disposed over the deep P-well and has a second width that is less than the width of the deep P-well. An M-type guard ring is formed around the upper surface of the second doped well, A Schottky metal is disposed on an upper surface of the second doped well and the N-type guard ring.
摘要翻译：包括具有第一宽度的深P阱的高电压肖特基二极管形成在半导体衬底上。掺杂的P阱设置在深P阱上，并且具有小于深P阱的宽度的第二宽度。在第二掺杂阱的上表面周围形成M型保护环，肖特基金属设置在第二掺杂阱的上表面和N型保护环上。

5. 发明申请

US20090085112A1 LATERAL DIFFUSION METAL-OXIDE-SEMICONDUCTOR STRUCTURE 有权
标题翻译：侧向扩散金属氧化物半导体结构
公开(公告)号：US20090085112A1
公开(公告)日：2009-04-02
申请号：US11864278
申请日：2007-09-28
申请人： Dah-Chuen Ho , Chien-Shao Tang , Zhe-Yi Wang , Yu-Chang Jong
发明人： Dah-Chuen Ho , Chien-Shao Tang , Zhe-Yi Wang , Yu-Chang Jong
IPC分类号： H01L29/78
CPC分类号： H01L29/7835 , H01L29/0653 , H01L29/4933 , H01L29/66659
摘要： A lateral diffusion metal-oxide-semiconductor (LDMOS) structure comprises a gate, a source, a drain and a shallow trench isolation. The shallow trench isolation is formed between the drain and the gate to withstand high voltages, applied to the drain, and is associated with the semiconductor substrate to form a recess. As such, the surface of the shallow trench isolation is lower than the surface of the semiconductor substrate. Optionally, the surface of the shallow trench isolation is lower than the surface of the semiconductor substrate by 300-1500 angstroms.
摘要翻译：横向扩散金属氧化物半导体（LDMOS）结构包括栅极，源极，漏极和浅沟槽隔离。浅沟槽隔离形成在漏极和栅极之间以承受施加到漏极上的高电压，并且与半导体衬底相关联以形成凹部。因此，浅沟槽隔离的表面低于半导体衬底的表面。可选地，浅沟槽隔离的表面比半导体衬底的表面低300-1500埃。

6. 发明申请

US20080073745A1 High-voltage MOS device improvement by forming implantation regions 审中-公开
标题翻译：通过形成注入区域改善高压MOS器件
公开(公告)号：US20080073745A1
公开(公告)日：2008-03-27
申请号：US11526419
申请日：2006-09-25
申请人： Chien-Shao Tang , Tsung-Yi Huang , David Ho , Zhe-Yi Wang , Yu-Chang Jong
发明人： Chien-Shao Tang , Tsung-Yi Huang , David Ho , Zhe-Yi Wang , Yu-Chang Jong
IPC分类号： H01L29/00
CPC分类号： H01L29/0847 , H01L21/823412 , H01L21/823418 , H01L21/823456 , H01L21/823481 , H01L21/823493 , H01L21/84 , H01L27/1203 , H01L29/0653 , H01L29/0878 , H01L29/42368 , H01L29/66659 , H01L29/7833 , H01L29/7835
摘要： A high-voltage semiconductor structure includes a high-voltage well region overlying a substrate, an isolation region extending from a top surface of the high-voltage well region into the high-voltage well region, a low-voltage well region having at least a portion underlying and adjoining the isolation region wherein the low-voltage well region is inside of and of a same conductivity type as the high-voltage well region, a gate dielectric on the high-voltage well region, a gate electrode on the gate dielectric, and a source/drain region of the same conductivity type as the high-voltage well region, wherein the source/drain region is spaced apart from a channel region by the isolation region.
摘要翻译：高电压半导体结构包括覆盖基板的高电压阱区域，从高压阱区域的顶表面延伸到高压阱区域的隔离区域，具有至少一个隔离区域的底部和邻接部分，其中低电压阱区域在与高压阱区域相同的导电类型内，高电压阱区域上的栅极电介质，栅极电介质上的栅电极，以及与高电压阱区相同导电类型的源/漏区，其中源极/漏极区通过隔离区与沟道区间隔开。

7. 发明申请

US20080191291A1 High Voltage CMOS Devices 有权
标题翻译：高压CMOS器件
公开(公告)号：US20080191291A1
公开(公告)日：2008-08-14
申请号：US12100888
申请日：2008-04-10
申请人： Chen-Bau Wu , Chien-Shao Tang , Robin Hsieh , Ruey-Hsin Liu , Shun-Liang Hsu
发明人： Chen-Bau Wu , Chien-Shao Tang , Robin Hsieh , Ruey-Hsin Liu , Shun-Liang Hsu
IPC分类号： H01L29/78
CPC分类号： H01L27/092 , H01L21/823814 , H01L21/823892 , H01L29/0653 , H01L29/0847 , H01L29/0852 , H01L29/1083 , H01L29/7816 , H01L29/7835
摘要： A transistor suitable for high-voltage applications is provided. The transistor is formed on a substrate having a deep well of a first conductivity type. A first well of the first conductivity type and a second well of a second conductivity type are formed such that they are not immediately adjacent each other. The well of the first conductivity type and the second conductivity type may be formed simultaneously as respective wells for low-voltage devices. In this manner, the high-voltage devices may be formed on the same wafer as low-voltage devices with fewer process steps, thereby reducing costs and process time. A doped isolation well may be formed adjacent the first well on an opposing side from the second well to provide further device isolation.
摘要翻译：提供了适用于高压应用的晶体管。晶体管形成在具有第一导电类型的深阱的衬底上。形成第一导电类型的第一阱和第二导电类型的第二阱，使得它们不彼此紧邻。第一导电类型和第二导电类型的阱可以同时形成用于低电压装置的各个孔。以这种方式，高压器件可以与具有较少工艺步骤的低电压器件形成在相同的晶片上，从而降低成本和处理时间。可以在与第二阱相对的一侧上邻近第一阱形成掺杂隔离阱以提供进一步的器件隔离。

8. 发明授权

US08995100B2 Configurable electrostatic discharging power clamp and related integrated circuit 有权
标题翻译：可配置静电放电电源钳及相关集成电路
公开(公告)号：US08995100B2
公开(公告)日：2015-03-31
申请号：US13430649
申请日：2012-03-26
申请人： Hsiang-Ming Chou , Kuo-Liang Pan , Chien-Feng Tseng , Yi-Chiu Tsai , Chien-Shao Tang , Hsin-Han Chen
发明人： Hsiang-Ming Chou , Kuo-Liang Pan , Chien-Feng Tseng , Yi-Chiu Tsai , Chien-Shao Tang , Hsin-Han Chen
IPC分类号： H02H3/22 , H02H9/04 , H01L27/02
CPC分类号： H02H9/046 , H01L27/0251 , H01L27/0266
摘要： There is provided an integrated circuit includes an output driver and a configurable electrostatic discharging (ESD) power clamp element according to embodiments of the present invention. The output driver includes a first semiconductor element having a first conductivity type and electrically connected to a first power rail; and a second semiconductor element having a second conductivity type different from the first conductivity type and electrically connected to a second power rail. Specifically, the configurable ESD power clamp element is coupled between the first power rail and the second power rail to provide ESD protection when configured in a first hardware state, and forms a portion of the output driver when configured in a second hardware state, thereby increasing the design flexibility of the integrated circuit.
摘要翻译：提供了一种集成电路，其包括根据本发明的实施例的输出驱动器和可配置静电放电（ESD）功率钳位元件。输出驱动器包括具有第一导电类型并电连接到第一电力轨的第一半导体元件; 以及具有不同于第一导电类型的第二导电类型并电连接到第二电力轨的第二半导体元件。具体地，可配置的ESD功率钳位元件耦合在第一电力轨道和第二电力轨道之间以在被配置为第一硬件状态时提供ESD保护，并且当配置在第二硬件状态时形成输出驱动器的一部分，从而增加集成电路的设计灵活性。

9. 发明申请

US20130249046A1 CONFIGURABLE ELECTROSTATIC DISCHARGING POWER CLAMP AND RELATED INTEGRATED CIRCUIT 有权
标题翻译：可配置静电放电电源钳和相关集成电路
公开(公告)号：US20130249046A1
公开(公告)日：2013-09-26
申请号：US13430649
申请日：2012-03-26
申请人： Hsiang-Ming Chou , Kuo-Liang Pan , Chien-Feng Tseng , Yi-Chiu Tsai , Chien-Shao Tang , Hsin-Han Chen
发明人： Hsiang-Ming Chou , Kuo-Liang Pan , Chien-Feng Tseng , Yi-Chiu Tsai , Chien-Shao Tang , Hsin-Han Chen
IPC分类号： H01L29/06 , H01L21/768
CPC分类号： H02H9/046 , H01L27/0251 , H01L27/0266
摘要： There is provided an integrated circuit includes an output driver and a configurable electrostatic discharging (ESD) power clamp element according to embodiments of the present invention. The output driver includes a first semiconductor element having a first conductivity type and electrically connected to a first power rail; and a second semiconductor element having a second conductivity type different from the first conductivity type and electrically connected to a second power rail. Specifically, the configurable ESD power clamp element is coupled between the first power rail and the second power rail to provide ESD protection when configured in a first hardware state, and forms a portion of the output driver when configured in a second hardware state, thereby increasing the design flexibility of the integrated circuit.
摘要翻译：提供了一种集成电路，其包括根据本发明的实施例的输出驱动器和可配置静电放电（ESD）功率钳位元件。输出驱动器包括具有第一导电类型并电连接到第一电力轨的第一半导体元件; 以及具有不同于第一导电类型的第二导电类型并电连接到第二电力轨的第二半导体元件。具体地，可配置的ESD功率钳位元件耦合在第一电力轨道和第二电力轨道之间以在被配置为第一硬件状态时提供ESD保护，并且当配置在第二硬件状态时形成输出驱动器的一部分，从而增加集成电路的设计灵活性。

10. 发明申请

US20100203691A1 High Voltage CMOS Devices 有权
标题翻译：高压CMOS器件
公开(公告)号：US20100203691A1
公开(公告)日：2010-08-12
申请号：US12760182
申请日：2010-04-14
申请人： Chen-Bau Wu , Chien-Shao Tang , Robin Hsieh , Ruey-Hsin Liu , Shun-Liang Hsu
发明人： Chen-Bau Wu , Chien-Shao Tang , Robin Hsieh , Ruey-Hsin Liu , Shun-Liang Hsu
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： H01L27/092 , H01L21/823814 , H01L21/823892 , H01L29/0653 , H01L29/0847 , H01L29/0852 , H01L29/1083 , H01L29/7816 , H01L29/7835
摘要： A transistor suitable for high-voltage applications is provided. The transistor is formed on a substrate having a deep well of a first conductivity type. A first well of the first conductivity type and a second well of a second conductivity type are formed such that they are not immediately adjacent each other. The well of the first conductivity type and the second conductivity type may be formed simultaneously as respective wells for low-voltage devices. In this manner, the high-voltage devices may be formed on the same wafer as low-voltage devices with fewer process steps, thereby reducing costs and process time. A doped isolation well may be formed adjacent the first well on an opposing side from the second well to provide further device isolation.
摘要翻译：提供了适用于高压应用的晶体管。晶体管形成在具有第一导电类型的深阱的衬底上。形成第一导电类型的第一阱和第二导电类型的第二阱，使得它们不彼此紧邻。第一导电类型和第二导电类型的阱可以同时形成用于低电压装置的各个孔。以这种方式，高压器件可以与具有较少工艺步骤的低电压器件形成在相同的晶片上，从而降低成本和处理时间。可以在与第二阱相对的一侧上邻近第一阱形成掺杂隔离阱以提供进一步的器件隔离。

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